MCC 161 MCD 161 ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V High Voltage Thyristor Module VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 MCC 3 Type 6 7 1 5 4 2 3 6 7 2 1 MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1 Symbol Conditions ITRMS ITAVM TVJ = TVJM TC = 85C; 180 sine ITSM TVJ = 45C; VR = 0 MCD 3 1 Maximum Ratings Features * International standard package * Direct Copper Bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 6000 6400 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5250 5600 A A TVJ = 45C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 180000 170000 A2s A2 s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 137000 128000 A2s A2 s 150 A/s 500 A/s * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches 1000 V/s Advantages PGAV 120 60 8 W W W VRGM 10 V TVJ TVJM Tstg -40...125 125 -40...125 C C C 3000 3600 V~ V~ 2.25-2.75 4.5-5.5 Nm Nm 125 g (di/dt)cr TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 s; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/s (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = ITAVM; tP = 30 s tP = 500 s VISOL 50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 4 54 2 300 165 I2dt 5 Applications * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions (c) 2005 IXYS All rights reserved 0540 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated 1-3 MCC 161 MCD 161 Symbol Conditions IRRM, IDRM VR = VRRM; Characteristic Values VT IT = 300A; TVJ = 25C VT0 rT 40 mA 1.36 V For power-loss calculations only (TVJ = TVJM) 0.8 1.6 V m VGT VD = 6 V; IGT VD = 6 V; 2 2.6 150 200 V V mA mA VGD IGD VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM 0.25 10 V mA IL TVJ = 25C; VD = 6 V; tP = 30 s diG/dt = 0.45 A/s; IG = 0.45 A 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM diG/dt = 0.5 A/s; IG = 0.5 A 2 s tq TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 s dv/dt = 20 V/s; IT = 160 A; -di/dt = 10A/s typ. 150 s QS IRM TVJ = TVJM -di/dt = 50 A/s; IT = 300 A 550 235 C A RthJC per thyristor; DC current per module per thyristor; DC current per module 0.155 0.078 0.225 0.113 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a TVJ = TVJM TVJ TVJ TVJ TVJ = 25C = -40C = 25C = -40C Creeping distance on surface Creepage distance in air Maximum allowable acceleration Fig. 1 Gate trigger characteristics Dimensions in mm (1 mm = 0.0394") Fig. 2 Gate trigger delay time 500 IT, 450 A IF 400 350 300 250 200 150 100 TVJ = 125C TVJ = 25C 50 0 (c) 2005 IXYS All rights reserved 0.0 0.5 1.0 1.5 V 2.0 VT, VF Fig 3: Forward current vs. voltage drop per thyristor/diode 0540 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 2-3 MCC 161 MCD 161 6000 106 50 Hz 80% VRRM 350 2 A 300 It 5000 DC 2 As ITAVM, 250 I A ITSM4000 , IFSM FAVM TVJ = 45C 200 TVJ = 45C 3000 180 sin 105 120 rect 150 TVJ = 125C 60 rect 2000 100 50 0 0.001 0.01 0.1 104 ms 1 0 1 0 10 s t 25 50 C 100 TC 75 t Fig. 5: I2t versus time per diode Fig. 4: Surge overload current ITSM, IFSM = f(t) 125 Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d) 2000 400 Ptot 30 rect TVJ = 125C 1000 RthKA K/W RthKA K/W W 360 0.1 Ptot 0.2 320 W 1800 0.02 0.04 1600 0.06 0.3 280 1400 0.5 0.8 240 0.1 0.15 1200 0.20 1.5 200 DC 160 1000 2 800 180 sin 120 rect 120 600 60 rect 400 30 rect 80 0.30 200 40 0 0 0 50 100 150 200 A 250 IFAVM, ITAVM 0 25 50 75 C 100 0 125 100 200 400 A 0 IDAVM 300 TA Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode) 25 50 75 C 100 125 TA Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge) 0.3 RthJC for various condition angles: d K/W DC_ 180 120 60 30 0.2 ZthJC RthJC (K/W) 0.155 0.171 0.184 0.222 0.294 Constants for ZthJC calculation (DC): 0.1 30 60 120 180 DC 0.0 10-3 10-2 10-1 100 i s 101 t 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.012 0.008 0.03 0.073 0.032 0.00014 0.019 0.18 0.52 1.6 0540 Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles (c) 2005 IXYS All rights reserved 3-3