NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 1
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 25W P3dB CW narrowband power
• 10W P3dB CW broadband power from 500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Broadband
25 Watt, 28 Volt
GaN HEMT
RF Specications (CW): VDS = 28V, IDQ = 225mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Gain Compression 22 25 -W
P1dB Average Output Power at 1dB Gain Compression 18 21 -W
GSS Small Signal Gain 12.5 13.5 -dB
hDrain Efciency at 3dB Gain Compression 60 65 -%
yOutput mismatch stress, VSWR = 10:1, all phase
angles, POUT = PSAT
No Performance Degradation After Test
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
IGGate Current 40 mA
PTTotal Device Power Dissipation (Derated above 25°C) 33 W
qJC Thermal Resistance (Junction-to-Case) 5.25 °C/W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V)
MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V)
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 2
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efciency, and Output Power Performance
Frequency (MHz) ZS (W)ZL (W)
800 3.9 + j5.9 12.2 + j6.1
2000 3.7 - j5.1 7.7 - j1.1
3000 4.7 - j15.3 7.4 - j5.8
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 225mA
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - 1 5 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2.0V, ID = 60mA) -0.44 0.55 W
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
4.9 5.4 -A
DC Specications: TC = 25°C
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 3
Figure 2 - Typical CW Performance,
Over Current, Frequency = 3000MHz
Figure 3 - Typical CW Performance
Over Frequency
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted.
Figure 4 - Typical CW Performance Over Voltage,
Impedances Held Constant, Frequency = 1800MHz
Typical Device Characteristics
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted.
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 6 - Typical CW Performance
in Nitronex Test Fixture, Frequency = 3000MHz
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 4
NPT B0 002 0 A
035274 R
G041200000
V GATE
V DRAIN
RF OUT
RF IN
Nitronex
NPTB00020
8/01/2006
Figure 7 - NPTB00025 3000MHz Test Fixture
NPTB00025
032574R
G041200000
Name Value Vendor Part Number
C1 150uF Nichicon UPW1C151MED
C10 270uF United Chmi-Con ELXY630ELL271MK25S
C2, C8 0.1uF Kemet C1206C104K1RACTU
C3, C7 0.01uF AVX 120 61C103 K AT2 A
C4, C9 1.0 uF Panasonic ECJ-5YB2A105M
C5, C6, C11, C12 5.6pF ATC ATC600F5R6CT
C13 1.2pF ATC ATC600F1R2AT
R2 49.9 ohm Panasonic ERJ-6ENF49R9V
R3 0.33 ohm Panasonic ERJ-6RQFR33V
Substrate -Taconic RF35, t=30mil, er=3.5
Table 2: NPTB00025 3000MHz Test Fixture Bill of Materials
VGS
RFIN
VDS
RFOUT
NPTB00025, 3000MHz CW Production Test Fixture
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com.
TL3
281mils
424mils
C12
C13
R2
TL4
265mils
441mils
C6 R3 C10
+
C8 C9
C7
VDS
TL5
65mils
930mils
RFOUT
C11
C5
VGS
RFIN
C4
C3
C2
TL1
65mils
345mils
TL6
65mils
600mils
TL7
65mils
600mils
TL2
65mils
397mils
C1
+
NPTB00025
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 5
Ordering Information1
Part Number Description
NPTB00025B NPTB00025 in AC200B-2 Metal-Ceramic Bolt-Down Package
1: To nd a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 8 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPTB00025
NDS-006 Rev. 4, April 2013NPTB00025 Page 6
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
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information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
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accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
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