BC807B BC807B Silicon PNP Epitaxial Transistor Description: The BC807B is designed for audio frequency general amplifier applications. Features: Excellent hFE Linearity Complementary to BC817B Chip Appearance Chip Size 490umx490um Chip Thickness 21020um Bonding Pad Size Base 110umx110um Emitter 110umx110um Front Metal Al Backside Metal Au Scribe line width 55um Wafer Size 6 inch Electrical Characteristics( Ta=25) Symbol Characteristic Test Condition Min Max Unit Collector Cutoff Current ICBO VCB=-45V, IE=0 -0.1 uA Emitter Cutoff Current IEBO VEB=-5V, IC=0 -0.1 uA Collector-Base Breakdown Voltage BVCBO IC=-0.1mA -50 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -45 V Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA -5.0 V VCE=-1V, IC=-100mA 120 DC Current Gain Collector Saturation Voltage Jan 2005 hFE VCE(sat) Version :0.0 IC=-500mA,IB=-50mA 560 -0.6 Page 1 of 1 V