PESD3V3S5UD,125 - NEXPERIA - Product.Network

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1. Product proﬁle

1.1 General description

Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small

Surface-Mounted Device (SMD) plastic package designed to protect up to ﬁve signal lines

from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESDxS5UD series

Fivefold ESD protection diode arrays

Rev. 02 — 7 December 2006 Product data sheet

nESD protection of up to ﬁve lines nESD protection up to 30 kV

nMax. peak pulse power: PPP = 200 W nIEC 61000-4-2; level 4 (ESD)

nUltra low leakage current: IRM =50pA nIEC 61000-4-5 (surge); IPP up to 20 A

nLow clamping voltage: VCL =12V at

IPP =20A

nComputers and peripherals nCommunication systems

nAudio and video equipment nPortable electronics

nCellular handsets and accessories nSubscriber Identity Module (SIM) card

protection

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3S5UD - - 3.3 V

PESD5V0S5UD - - 5 V

PESD12VS5UD - - 12 V

PESD15VS5UD - - 15 V

PESD24VS5UD - - 24 V

Product data sheet Rev. 02 — 7 December 2006 2 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

2. Pinning information

3. Ordering information

4. Marking

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S5UD - 215 300 pF

PESD5V0S5UD - 165 220 pF

PESD12VS5UD - 73 100 pF

PESD15VS5UD - 60 90 pF

PESD24VS5UD - 45 70 pF

Table 1. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 1

2 common anode

3 cathode 2

4 cathode 3

5 cathode 4

6 cathode 5

132

56 61

006aaa159

Table 3. Ordering information

Type number Package

Name Description Version

PESD3V3S5UD SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

PESD5V0S5UD

PESD12VS5UD

PESD15VS5UD

PESD24VS5UD

Table 4. Marking codes

Type number Marking code

PESD3V3S5UD E1

PESD5V0S5UD E2

PESD12VS5UD E3

PESD15VS5UD E4

PESD24VS5UD E5

Product data sheet Rev. 02 — 7 December 2006 3 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to 2.

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1, 3, 4, 5 or 6 to 2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp= 8/20 µs[1][2] - 200 W

IPP peak pulse current tp= 8/20 µs[1][2]

PESD3V3S5UD - 20 A

PESD5V0S5UD - 20 A

PESD12VS5UD - 10 A

PESD15VS5UD - 6 A

PESD24VS5UD - 4 A

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1][2]

PESD3V3S5UD - 30 kV

PESD5V0S5UD - 30 kV

PESD12VS5UD - 30 kV

PESD15VS5UD - 30 kV

PESD24VS5UD - 23 kV

PESDxS5UD series MIL-STD-883 (human

body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 10 kV

Product data sheet Rev. 02 — 7 December 2006 4 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

6. Characteristics

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (µs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Table 8. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage

PESD3V3S5UD - - 3.3 V

PESD5V0S5UD - - 5 V

PESD12VS5UD - - 12 V

PESD15VS5UD - - 15 V

PESD24VS5UD - - 24 V

IRM reverse leakage current

PESD3V3S5UD VRWM = 3.3 V - 300 800 nA

PESD5V0S5UD VRWM = 5 V - 80 200 nA

PESD12VS5UD VRWM = 12 V - 0.05 15 nA

PESD15VS5UD VRWM = 15 V - 0.05 15 nA

PESD24VS5UD VRWM = 24 V - 0.05 15 nA

VBR breakdown voltage IR=1mA

PESD3V3S5UD 5.3 5.6 5.9 V

PESD5V0S5UD 6.4 6.8 7.2 V

PESD12VS5UD 12.5 14.5 16 V

PESD15VS5UD 17 18 19 V

PESD24VS5UD 25.5 27 29 V

Product data sheet Rev. 02 — 7 December 2006 5 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1, 3, 4, 5 or 6 to 2.

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S5UD - 215 300 pF

PESD5V0S5UD - 165 220 pF

PESD12VS5UD - 73 100 pF

PESD15VS5UD - 60 90 pF

PESD24VS5UD - 45 70 pF

VCL clamping voltage [1][2]

PESD3V3S5UD IPP =1A --8V

IPP =20A --12V

PESD5V0S5UD IPP =1A --8V

IPP =20A --13V

PESD12VS5UD IPP =1A --17V

IPP =10A --24V

PESD15VS5UD IPP =1A --22V

IPP =6A --33V

PESD24VS5UD IPP =1A --33V

IPP =4A --52V

rdif differential resistance IR=5mA --25Ω

Table 8. Characteristics

…continued

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Tamb =25°C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

006aaa698

tp (µs)

110

103

10 102

102

103

104

PPP

(W)

Tj (°C)

0 20015050 100

001aaa633

0.4

0.8

1.2

PPP

PPP(25°C)

Product data sheet Rev. 02 — 7 December 2006 6 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

f = 1 MHz; Tamb =25°C

(1) PESD3V3S5UD

(2) PESD5V0S5UD

f = 1 MHz; Tamb =25°C

(1) PESD12VS5UD

(2) PESD15VS5UD

(3) PESD24VS5UD

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Diode capacitance as a function of reverse

voltage; typical values

PESD3V3S5UD; PESD5V0S5UD

IR is less than 5 nA at 150 °C for:

PESD12VS5UD; PESD15VS5UD; PESD24VS5UD

Fig 7. Relative variation of reverse leakage current as

a function of junction temperature; typical

values

Fig 8. V-I characteristics for a unidirectional ESD

protection diode

VR (V)

054231

006aaa700

140

100

180

220

(pF)

(1)

(2)

VR (V)

0252010 155

006aaa701

(pF)

(1)

(2)

(3)

006aaa699

10−1

Tj (°C)

−100 150100050−50

IRM

IRM(25°C)

006aaa407

−VCL −VBR −VRWM −IRM

−IR

−IPP

P-N

−+

Product data sheet Rev. 02 — 7 December 2006 7 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

Fig 9. ESD clamping test setup and waveforms

006aaa702

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

Cs = 150 pF; Rd = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

GND PESD3V3S5UD

PESD5V0S5UD

PESD12VS5UD

PESD15VS5UD

PESD24VS5UD

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

Product data sheet Rev. 02 — 7 December 2006 8 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

7. Application information

The PESDxS5UD series is designed for the protection of up to ﬁve unidirectional data

lines from the damage caused by ESD and surge pulses. The PESDxS5UD series may be

used on lines where the signal polarities are both, positive and negative with respect to

ground. The PESDxS5UD series provides a surge capability of 200 W per line for an

8/20 µs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESDxS5UD as close to the input terminal or connector as possible.

2. The path length between the PESDxS5UD and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

Fig 10. Application diagram

006aaa019

PESDxS5UD

high-speed

data lines

unidirectional protection of 5 lines

PESDxS5UD

bidirectional protection of 4 lines

Product data sheet Rev. 02 — 7 December 2006 9 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

[2] T1: normal taping

[3] T2: reverse taping

Fig 11. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5 1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PESD3V3S5UD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

PESD5V0S5UD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

PESD12VS5UD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

PESD15VS5UD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

PESD24VS5UD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 02 — 7 December 2006 10 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

10. Soldering

Dimensions in mm

Fig 12. Reﬂow soldering footprint SOT457 (SC-74)

Dimensions in mm

Fig 13. Wave soldering footprint SOT457 (SC-74)

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

1.40

4.30

5.30

0.45

msc423

1.45 4.45

5.05

solder lands

solder resist

occupied area

Product data sheet Rev. 02 — 7 December 2006 11 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESDXS5UD_SER_2 20061207 Product data sheet - PESDXS5UD_SER_1

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Table 2 “Pinning”: symbol drawing amended

•Table 5 “Limiting values”: amended

•Table 6 “ESD maximum ratings”: amended

•Table 7 “ESD standards compliance”: amended

•Table 8 “Characteristics”: VBR minimum and maximum values for PESD15VS5UD adapted

•Figure 7: ﬁgure notes adapted

•Section 10 “Soldering”: added

PESDXS5UD_SER_1 20060404 Product data sheet - -

Product data sheet Rev. 02 — 7 December 2006 12 of 13

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected to

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESDxS5UD series

Fivefold ESD protection diode arrays

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 December 2006

Document identifier: PESDXS5UD_SER_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13