© Semiconductor Components Industries, LLC, 2007
February, 2020 − Rev. 3
1Publication Order Number:
FGH80N60FD/D
IGBT - Field Stop
600 V, 80 A
FGH80N60FD
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for induction
heating, telecom, ESS and PFC applications where low conduction
and switching losses are essential.
Features
•High Current Capability
•Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
•High Input Impedance
•Fast Switching
•This Device is Pb−Free and is RoHS Compliant
Applications
•Induction Heating, PFC, Telecom, ESS
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MARKING DIAGRAM
G
E
C
G
C
E
G
TO−247−3LD
CASE 340CK
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH80N60FD = Specific Device Code
$Y&Z&3&K
FGH80N60
FD
COLLECTOR
(FLANGE)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
FGH80N60FD
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2
ABSOLUTE MAXIMUM RATINGS
Description Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Collector Current TC = 25°CIC80 A
TC = 100°C 40 A
Pulsed Collector Current TC = 25°C ICM (Note 1) 160 A
Maximum Power Dissipation TC = 25°CPD290 W
TC = 100°C116 W
Operating Junction Temperature TJ−55 to +150 °C
Storage Temperature Range Tstg −55 to +150 °C
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter Symbol Max. Unit
Thermal Resistance, Junction−to−Case RJC (IGBT) 0.43 °C/W
Thermal Resistance, Junction−to−Case RJC (Diode) 1.5 °C/W
Thermal Resistance, Junction−to−Ambient RJA 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Package Method Reel Size Tape Width Quantity
FGH80N60FDTU FGH80N60FD TO−247 Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A600 − − V
Temperature Coefficient of Breakdown
Voltage
BVCES/TJVGE = 0 V, IC = 250 A−0.6 −V/°C
Collector Cut−Off CurrentICES VCE = VCES, VGE = 0 V − − 250 A
G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICs
G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.5 5.5 7.0 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V −1.8 2.4 V
IC = 40 A, VGE = 15 V, TC = 125°C−2.05 −V
DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz −2110 −pF
Output Capacitance Coes −200 −pF
Reverse Transfer Capacitance Cres −60 −pF
FGH80N60FD
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3
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionsSymbol
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A,
RG = 10  VGE = 15 V,
Inductive Load, TC = 25°C
−21 −ns
Rise Time tr−56 −ns
Turn−Off Delay Time td(off) −126 −ns
Fall Time tf−50 100 ns
Turn−On Switching Loss Eon −1 1.5 mJ
Turn−Off Switching Loss Eoff −0.52 0.78 mJ
Total Switching Loss Ets −1.52 2.28 mJ
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A,
RG = 10  VGE = 15 V,
Inductive Load, TC = 125°C
−20 −ns
Rise Time tr−54 −ns
Turn−Off Delay Time td(off) −131 −ns
Fall Time tf−70 −ns
Turn−On Switching Loss Eon −1.1 −mJ
Turn−Off Switching Loss Eoff −0.78 −mJ
Total Switching Loss Ets −1.88 −mJ
Total Gate Charge QgVCE = 400 V, IC = 40 A, VGE = 15 V −120 −nC
Gate to Emitter Charge Qge −14 −nC
Gate to Collector Charge Qgc −58 −nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage VFM IF = 20 A TC = 25°C−2.3 2.8 V
TC = 125°C−1.7 −
Diode Reverse Recovery Time trr IF = 20 A, diF/dt = 200 A/s TC = 25°C−36 −ns
TC = 125°C−105 −
Diode Reverse Recovery Current Irr TC = 25°C−2.6 −A
TC = 125°C−7.8 −
Diode Reverse Recovery Charge Qrr TC = 25°C−46.8 −nC
TC = 125°C−409 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH80N60FD
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature
Figure 6. Saturation Voltage vs. VGE
0
40
80
120
160
20 V 12 V
15 V
10 V
VGE = 8 V
024 6 810
TC = 25°C
Collector−Emitter Voltage, VCE [V]
Collector Current, IC [A]
0
40
80
120
160
20 V
12 V
15 V
10 V
VGE = 8 V
02468
10
Collector−Emitter Voltage, VCE [V]
TC = 125°C
Collector Current, IC [A]
0
40
80
120
160
0123456
Common Emitter
VGE = 15 V
TC = 25°C
TC = 125°C
Collector−Emitter Voltage, VCE [V]
Collector Current, IC [A]
Common Emitter
VCE = 20 V
TC = 25°C
TC = 125°C
0
40
80
120
160
2 4 6 8 10 12
Gate−Emitter Voltage, VGE [V]
Collector Current, IC [A]
1.0
1.5
2.0
2.5
3.0
3.5
80 A
40 A
20 A
25 50 75 100 125
Case Temperature, TC [°C]
Collector−Emitter Voltage, VCE [V]
0
4
8
12
16
20
40 A
80 A
IC = 20 A
Common Emitter
VGE = 15 V
Common Emitter
TC = 25°C
4812 16 20
Gate−Emitter Voltage, VGE [V]
Collector−Emitter Voltage, VCE [V]
FGH80N60FD
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5
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn−Off Switching SOA
Characteristics
Figure 12. Turn−On Characteristics vs. Gate
Resistance
0
4
8
12
16
20
40 A
80 A
Common Emitter
TC = 125°C
IC = 20 A
4812 16 20
Gate−Emitter, VGE [V]
Collector−Emitter Voltage, VCE [V]
0
1000
2000
3000
4000
5000
0.1 110 30
Ciss
Coss
Crss
Collector−Emitter Voltage, VCE [V]
Capacitance [pF]
0
3
6
9
12
15
300 V 200 V
VCC = 100 V
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 125°C
Common Emitter
TC = 25°C
0050
100 150
Gate Charge, Qg [nC]
Gate−Emitter Voltage, VGE [V]
0.01
0.1
1
10
100
1 ms
10 ms
DC
400
100 s
10 s
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature.
110 100 1000
Collector−Emitter Voltage, VCE [V]
Collector Current, IC [A]
1
10
100
200
110 100 1000
Safe Operating Area
VGE = 20 V, TC = 100°C
Collector−Emitter Voltage, VCE [V]
Collector Current, IC [A]
200
5
100
10
010203040
50
td(on)
tr
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 125°C
Gate Resistance, RG []
Switching Time [ns]
FGH80N60FD
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6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn−Off Characteristics
vs. Gate Resistance
Figure 14. Turn−On Characteristics
vs. Collector Current
Figure 15. Turn−Off Characteristics
vs. Collector Current
Figure 16. Switching Loss vs. Gate
Resistance
Figure 17. Switching Loss vs. Collector
Current
10
100
1000
2000
01020304050
td(off)
tf
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 125°C
Gate Resistance, RG []
Switching Time [ns]
20 40 60 80
10
100
Switching Time [ns]
200
tr
td(on)
Collector Current, IC [A]
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
100
500
Switching Time [ns]
20
20 40 60 80
tf
td(off)
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
Collector Current, IC [A]
0.3
5
1
010 20 30 40 50
Eon
Eoff
Gate Resistance, RG []
Switching Loss [mJ]
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 125°C
0.1
1
10
Switching Loss [mJ]
20 40 60 80
Collector Current, IC [A]
Eon
Eoff
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
FGH80N60FD
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7
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 18. Transient Thermal Impedance of IGBT
Figure 19. Forward Characteristics Figure 20. Stored Charge
Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current
1E−3
0.01
0.1
1
0.2
0.5
0.1
0.05
0.01
0.02
Single Pulse t1
t2
1E−51E−41E−3 0.01 0.1 1
Rectangular Pulse Duration [sec]
Thermal Response [Zjc]
PDM
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zjc + TC
TC = 75°C
TC = 25°C
TC = 125°C
Forward Voltage, VF [V]
Forward Current, IF [A]
01234
1
10
100
0.1 0
100
200
300
400
500
600
100 200 300 400
125°C
25°C
di/dt, [A/s]
Stored Recovery Charge, Qrr [nC]]
20
40
60
80
100
120
140
125°C
25°C
di/dt, [A/s]
100 200 300 400
Reverse Recovery Time, trr [ns]
0
5
10
15
20
125°C
25°C
100 200 300 400
di/dt, [A/s]
Reverse Recovery Current, Irr [A]
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−3LD SHORT LEAD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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