PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration. Features Applications l Large active area: 18 x 18 mm l Excellent uniformity even at wavelengths longer than 1000 nm l High UV sensitivity l Windowless package l Precision photometry l Spectral response calibration l Analytical equipment l Trap detector Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 0 to +60 0 to +80 Unit V C C Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance Shunt resistance Uniformity * Symbol p S Isc ID tr Ct Rsh Condition =p 100 lx, 2856 K VR=10 mV VR=0 V, RL=1 k, =660 nm VR=0 V, f=10 kHz VR=10 mV Within 80 % of active area =190 to 1100 nm U Min. 200 10 Typ. 190 to 1100 960 530 250 50 7 3.5 200 Max. 1000 - Unit nm nm mA/W A pA s nF M - - 0.5 % Sensitivity uniformity (typical example, =1100 nm) S6337-01 (18 x 18 mm) 100 80 UNIFORMITY=0.3 % 60 40 20 0 -10 35 mm) (Ta=25 C, spot light size: 120 RELATIVE SENSITIVITY (%) RELATIVE SENSITIVITY (%) 120 S1337-1010BQ (10 x 10 mm) 35 mm) (Ta=25 C, spot light size: 100 80 UNIFORMITY=5.6 % 60 40 20 0 -8 -6 -4 -2 0 2 4 6 8 10 POSITION ON ACTIVE AREA (mm) -6 -4 -2 0 2 4 6 POSITION ON ACTIVE AREA (mm) KSPDB0177EA * Uniformity = Rs/Rm Rs: Photo sensitivity at any point within 80 % of the active area Rm: Averaged photo sensitivity within 80 % of the active area KSPDB0178EA S6337-01 Si photodiode Spectral response Dark current vs. reverse voltage (Typ. Ta=25 C) 0.7 (Typ. Ta=25 C) 10 nA 0.5 1 nA DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 QE=100% 0.4 0.3 0.2 100 pA 10 pA 0.1 0 190 400 600 800 1 pA 0.01 1000 WAVELENGTH (nm) 0.1 1 10 REVERSE VOLTAGE (V) KSPDB0167EA Dimensional outline (unit: mm) +0 (Typ. Ta=25 C, f=1 MHz) 25.5 -0.6 18.0 18.0 1 nF ACTIVE AREA PHOTOSENSITIVE SURFACE WIRE PROTECTION 1 10 REVERSE VOLTAGE (V) WHITE CERAMIC (10) 10 pF 0.1 2.54 0.2 100 pF 1.2 TERMINAL CAPACITANCE 3.4 +0 10 nF 25.5 - 0.6 Terminal capacitance vs. reverse voltage KSPDB0166EA 0.45 LEAD KSPDB0165EA 5.0 1.75 KSPDA0128EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1029E01 May 2004 DN