10/2008
AWC6311R
HELP3TM Cellular CDMA 3.4 V/28 dBm
Linear Power Amplier Module
PRELIMINARY DATA SHEET - Rev 1.3
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efciency:
39 % @ +28 dBm output
20 % @ +16 dBm output
Low Quiescent Current: 8 mA
Low Leakage Current in Shutdown Mode: <1 µA
Internal Voltage Regulation (no need for DC/DC
Converter
Optimized for a 50 System
Low Prole Surface Mount Package: 1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS Compliant Package, 250 oC MSL-3
Suitable for new CDMA bands (806-849 MHz)
APPLICATIONS
CDMA/EVDO Cell-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWC6311R meets the increasing demands
for higher efciency and smaller footprint in CDMA
1X handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWC6311R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and pHEMT
devices on the same die, to enable state-of-the-art
reliability, temperature stability, and ruggedness. The
AWC6311R is part of ANADIGICS’ High-Efciency-
at-Low-Power (HELP) family of CDMA power
ampliers, which deliver low quiescent currents and
signicantly greater efciency without a costly external
DAC or DC-DC converter. Through selectable bias
modes, the AWC6311R achieves optimal efciency
across different output power levels, specifically
at low- and mid-range power levels where the PA
typically operates, thereby dramatically increasing
handset talk-time and standby-time. Its built-in
voltage regulator eliminates the need for external
Figure 1: Block Diagram
Bias Control
VBATT
VEN
RFIN
RFOU
T
GND
VMODE
1
7
8
6
GND at slug (pad)
3
4
2
VCC
GND
5
AWC6311R
voltage regulation components. The 3 mm x 3 mm x
1 mm surface mount package incorporates matching
networks optimized for output power, efciency and
linearity in a 50 system.
2PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
BATT
RF
OUT
V
EN
RF
IN
V
MODE
GND
1
GND
2
8
7
V
CC
GND
GND
6
5
3
4
PIN NAME DESCRIPTION
1 V
EN
PA Enable Voltage
2 V
MODE
Mode Control
3RF
IN
RF Input
4 V
BATT
Battery Voltage
5V
CC
Supply Voltage
6GND Ground
7RF
OUT
RF Output
8GND Ground
PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
PARAMETER MIN MAX UNIT
Supply Voltage (V
CC
and V
BATT
)0+5 V
Mode Control Voltage (V
MODE
)0+3.5 V
Enable Voltage (V
EN
)0+3.5 V
RF Input Power (P
IN
)-+10 dBm
Storage Temperature (T
STG
)-40 +150 °C
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 824 -849 MHz
Supply Voltage (V
CC
and V
BATT
)+3.2 +3.4 +4.2 V
Enable Voltage (V
EN
)+2.2
0
+2.4
-
+3.1
+0.5 VPA "on"
PA "shut down"
Mode Control Voltage (V
MODE
)
+2.2
0
+2.4
-
+3.1
+0.5 VLow Bias Mode
High Bias Mode
RF Output Power (P
OUT
)27.5(1) 28.0 -dBm CDMA
Case Temperature (T
C
)-30 -+85 °C
4PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
Table 4: Electrical Specications - CDMA Operation
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 system, IS-95 uplink waveform)
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
PARAMETER MIN TYP MAX UNIT COMMENTS
Gain 27
15
29
16.5
32
19
dB P
OUT
= +28 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.4 V
Adjacent Channel Power
at 885 kHz offset
(1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
-51
-52
-47
-47 dBc
P
OUT
= +28 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.4 V
Adjacent Channel Power
at 1.98 MHz offset
(1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
-61
-62
-57
-57 dBc P
OUT
= +28 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.4 V
Power-Added Efficiency
(1)
36
17
39
20
-
-%P
OUT
= +28 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.4 V
Quiescent Current (Icq) - 8 13 mA V
MODE
= +2.4 V, Low Bias
Enable Current -0.5 0.8 mA through V
EN
pin, V
MODE
= +2.4 V
Battery Current -2.5 5mA through V
BATT
pin, V
MODE
= +2.4 V
Mode Control Current -<0.1 0.25 mA through V
MODE
pin, V
MODE
= +2.4 V
Leakage Current -<1 5AV
CC
= +4.2 V, V
EN
= 0 V,
V
MODE
= 0 V
Noise in Receive Band
-
-
-
-134
-137
-158
-131
-135
-
dBm/Hz
dBm/Hz
dBm/Hz
869 MHz to 894 MHz:
16 dBm < P
OUT
< 28dBm
869 MHz to 894 MHz:
P
OUT <
16 dBm
1575 + 1.023 MHz
Harmonics
2fo
3fo, 4fo
-
-
-40
-44
-30
-35 dBc CW Measurement
Input Impedance - - 2:1 VSWR
Spurious Output Level
(all spurious outputs) - - -65 dBc
P
OUT
< +28 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Load mismatch stress with no
permanent degradation or failure 8:1 - - VSWR Applies over all operating
conditions
PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplier may be placed in a shutdown
mode by applying a logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Table 5: Bias Control
Bias Modes
The power amplier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to the VMODE
voltage. The Bias Control table lists the recommended
modes of operation for various applications.
Figure 3: Application Circuit
GND
at slug
RFIN
2
1
5
6
8
7
4
3
V
ENABLE
RF
IN
V
MODE
GND
GND
V
BATT
V
CC
RF
OUT
V
CC
V
MODE
V
ENABLE
C6
1 µF
RFOUT
C2
10 µF
C5
68 pF
C1
10 µF
C4
68 pF
V
BATT
C7
68 pF*
Note:
* This capacitor is only needed if a DC voltage is present on the RF input pin
6PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
PACKAGE OUTLINE
Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure 5: Branding Specication
6311R
LLLLNN
BBBBCC
PRELIMINARY DATA SHEET - Rev 1.3
10/2008
AWC6311R
7
COMPONENT PACKAGING
Pin 1
Table 6: Tape & Reel Dimensions
Figure 6: Tape & Reel Packaging
PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA
3 mm x 3 mm x 1 mm 12 mm 4 mm 2500 7"
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.3
10/2008
8
AWC6311R
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWC6311RM9Q7 -30 °C to +85 °C
RoHS Compliant 8 Pin
3 mm x 3 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWC6311RM9P9 -30 °C to +85 °C
RoHS Compliant 8 Pin
3 mm x 3 mm x 1 mm
Surface Mount Module
Partial Tape and Reel