PRELIMINARY PRODUCT INFORMATION NJ EC / MOS Field Effect Power Transistor NP12NO6HLB,NP12NOG6ILB SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION so (in millimeter) This product is N-Channel MOS Field Effect Transistor de- signed for high current switching applications. O2e02 35 esse 0+0 - 0.50.1 FEATURES * Channel temperature 175 degree rated * Super Low On-State Resistance Ros(on)1 =100MQ Max. (Ves=10V,ln=6A) Rosjon2=130MQ Max. (Ves= 5V,lo=4A) Low Ciss Ciss = 570pF Typ. Built-in Gate Protection Diode HOSe04 ORDERING INFORMATION one PART NUMBER| PACKAGE 3.Source | 4.Fin (Drain) NP1i2NO6HLB TO-251 TO-251 (MP-3) NP12NO6ILB TO-252 v B 2.3+0.2 ABSOLUTE MAXIMUM RATINGS(Ta=25C) | H-0.520.1 Drain to Source Voltage "Voss 60 V 2 Ze Gate to Source Voltage Voss +20 V = Qn Drain Current(DC) In(0c) +12 A wo Drain Current(pulse)* Iopuise) +32 A 1.3 MAX, oe Total Power Dissipation(Ta=25C) Pr 1.2 Ww +5 Total Power Dissipation(Tch=25C) Pr 45. W x aate Single Avalanche Current las 12 A 3. Source Single Avalanche Energy Eas T.B.D. mJ Fin (Drain) _ TO-252 (MP-3Z) Channel Temperature Teh 175 C Dra rain Storage Temperature Tstg -55to+175 C * PWs10us,Duty Cycles1% Body **Starting Tch=25C, RG=250, TGS20V--0 Gate Diode THERMAL RESISTANCE Channel to Case Rth(ch-c) 3.33 C/W Gate Protection . Diode Source Channel to Ambient Rth(ch-a) 125 C/W The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied to this device. This information in this document is being issued in advance of the production cycle for the device. The parameter for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. Document No. D13457EJ1VOPM00 General-Purpose Device Department Date Published April, 1998 Semiconductor Solution Engineering Division NEC Corporation 1998 NEC CorporationNEC NP12NO6HLB,NP12NO6ILB ELECTRICAL CHARACTERISTICS(Ta=25C) CHARACTERISTICS SYMBOL TEST CONDITIONS | MIN. | TYP.| MAX. | UNIT Drain to Source Rosion1 | Vos=10V,lo= 6A 70 100 mQ On-state Resistance Rosjon2 | Ves= 5V,lo= 4A 90 130 mQ Rosion3_| Vos= 4V,lo= 4A 100 150 mQ Gate to Source Cutoff Voltage Ves | Vos=10V,lo=1mA 1.0 1.6 2.0 Vv Forward Transfer Admittance lys| | Vos=10V,lo=4A 5.0 | 8.4 5 Drain Leakage Current Inss _{| Vos=60V,Vcas=0 10 LA Gate to Source Leakage Current less Ves=+20V, Vos=0 +10 LA Input Capacitance Ciss Vos=10V 570 | 1260 | pF Output Capacitance Coss Ves=0 290 440 pF Reverse Transfer Capacitance Crss f=1MHz 75 140 pF Turn-On Delay Time ta(on) lp=4A 5 11 nS Rise Time tr Vesion=10V 60 150 ns Turn-Off Delay Time ta(ott Voo=30V 75 150 ns Fall Time ti Re=10Q 40 100 nS Total Gate Charge Qc Ilp=8A 21 32 nc Gate to Source Charge Qes Voo=48V 2.0 nc Gate to Drain Charge Qep Ves=10V 6.5 nc Body Diode Forward Voltage Vrs-o) | Ir=8A,Vcs=0 1.0 1.5 Vv Reverse Recovery Time tre IF=8A,Vcs=0 85 ns Reverse Recovery Charge Qn di/dt=100A/us 200 nc Test Circuit 1 Switching Time D.U.T. Ru Re PGQY) Re=100 [ Ves t=1us Duty Cycle 1% Test Circuit 2 Gate Charge PG D.U. Is=2 mA 509 T. Ri [=The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, atits own discretion, may withdraw the device prior to its production. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. if customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M5 96.5