HIP4082 S E M I C O N D U C T O R 80V, 1.25A Peak Current H-Bridge FET Driver March 1995 Features Description * Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC (N) and DIP packages. * Bootstrap Supply Max Voltage to 95VDC Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and flexible with the HIP4082 H-bridge driver. With operation up to 80V, the device is best suited to applications of moderate power levels. * Drives 1000pF Load in Free Air at 50oC with Rise and Fall Times of Typically 15ns * User-Programmable Dead Time (0.1 to 4.5s) Similar to the HIP4081, it has a flexible input protocol for driving every possible switch combination except those which would cause a shoot-through condition. The HIP4082's reduced drive current allows smaler packaging and it has a much wider range of programmable dead times (0.1 to 4.5s) making it ideal for switching frequencies up to 200kHz. The HIP4082 does not contain an internal charge pump, but does incorporate nonlatching level-shift translation control of the upper drive circuits. * DIS (Disable) Overrides Input Control and Refreshes Bootstrap Capacitor when Pulled Low * Input Logic Thresholds Compatible with 5V to 15V Logic Levels * Shoot-Through Protection * Undervoltage Protection This set of features and specifications is optimized for applications where size and cost are important. For applications needing higher drive capability the HIP4080A and HIP4081A are recommended. Applications * UPS Systems * DC Motor Controls * Full Bridge Power Supplies Ordering Information * Class D Audio Power Amplifiers PART NUMBER * Noise Cancellation Systems * Battery Powered Vehicles * Peripherals TEMPERATURE RANGE HIP4082IB -55oC HIP4082IP -55oC PACKAGE to +125oC 16 Lead Plastic SOIC (N) to +125oC 16 Lead Plastic DIP * Medium/Large Voice Coil Motors Pinout Application Block Diagram 80V HIP4082 (PDIP, SOIC) TOP VIEW 12V BHB 1 16 BHO BHI 2 15 BHS BLI 3 14 BLO ALI 4 13 ALO DEL 5 12 VDD VSS 6 11 AHS AHI 7 10 AHO DIS 8 9 AHB BHO BHS BHI BLO LOAD BLI HIP4082 ALI ALO AHS AHI AHO GND GND CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1995 1 File Number 3676.1 HIP4082 Functional Block Diagram 9 LEVEL SHIFT U/V BHI 2 AHI 7 DIS 8 AHB BHB 1 DRIVER DRIVER LEVEL SHIFT 10 AHO BHO 16 11 AHS BHS 15 TURN-ON DELAY TURN-ON DELAY VDD VDD 12 ALI 4 DEL 5 BLI 3 VSS 6 DETECTOR UNDERVOLTAGE DRIVER DRIVER TURN-ON DELAY 13 ALO TURN-ON DELAY BLO 14 Typical Application (PWM Mode Switching) 80V 12V PWM INPUT DELAY RESISTOR DIS FROM OPTIONAL OVERCURRENT LATCH 1 BHB BHO 16 2 BHI BHS 15 3 BLI BLO 14 4 ALI ALO 13 5 DEL VDD 12 6 VSS AHS 11 7 AHI AHO 10 8 DIS AHB 9 LOAD 12V GND TO OPTIONAL CURRENT CONTROLLER OR OVERCURRENT LATCH RDIS + - RSH GND 2 U/V Specifications HIP4082 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on AHS, BHS. . . . . -6V (Transient) to 80V (25oC to 150oC) Voltage on AHS, BHS. . . . . -6V (Transient) to 70V (-55oC to150oC) Voltage on AHB, BHB. . . . . . . . . VAHS, BHS -0.3V to VAHS, BHS +VDD Voltage on ALO, BLO . . . . . . . . . . . . . . . . . .VSS -0.3V to VDD +0.3V Voltage on AHO, BHO . . . VAHS, BHS -0.3V to VAHB, BHB +0.3V Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5mA to 0mA Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns Thermal Resistance, Junction-Ambient JA SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115oC/W DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90oC/W Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . See Curve Storage Temperature Range. . . . . . . . . . . . . . . . . . -65oC to +150oC Operating Max. Junction Temperature . . . . . . . . . . . . . . . . . +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC (For SOIC - Lead Tips Only)) NOTE: All voltages are relative VSS unless otherwise specified. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +8.5V to +15V Voltage on VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +1.0V Voltage on AHB, BHB. . . . . . . . VAHS, BHS +7.5V to VAHS, BHS +VDD Electrical Specifications Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . -4mA to -100A VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K TJ = PARAMETER SYMBOL TJ = -55oC TO +150oC +25oC TEST CONDITIONS MIN TYP MAX MIN MAX UNITS All inputs = 0V, RDEL = 100K 1.2 2.3 3.5 0.85 4 mA All inputs = 0V, RDEL = 10K 2.2 4.0 5.5 1.9 6.0 mA f = 50kHz, no load 1.5 2.6 4.0 1.1 4.2 mA 50kHz, no load, RDEL = 10k 2.5 4.0 6.4 2.1 6.6 mA AHI = BHI = 0V 0.5 1.0 1.5 0.4 1.6 mA SUPPLY CURRENTS & UNDER VOLTAGE PROTECTION VDD Quiescent Current IDD VDD Operating Current IDDO AHB, BHB Off Quiescent Current IAHBL, IBHBL AHB, BHB On Quiescent Current IAHBH, IBHBH AHI = BHI = VDD 65 145 240 40 250 A AHB, BHB Operating Current IAHBO, IBHBO f = 50kHz, CL = 1000pF .65 1.1 1.8 .45 2.0 mA - - 1.0 - - A AHS, BHS Leakage Current IHLK VAHS = VBHS = 80V VAHB = VBHB = 96 VDD Rising Undervoltage Threshold VDDUV+ 6.8 7.6 8.25 6.5 8.5 V VDD Falling Undervoltage Threshold VDDUV- 6.5 7.1 7.8 6.25 8.1 V Undervoltage Hysteresis UVHYS 0.17 0.4 0.75 0.15 0.90 V AHB, BHB Undervoltage Threshold VHBUV Referenced to AHS & BHS 5 6.0 7 4.5 7.5 V 0.8 V INPUT PINS: ALI, BLI, AHI, BHI, & DIS Low Level Input Voltage VIL Full Operating Conditions - - 1.0 - High Level Input Voltage VIH Full Operating Conditions 2.5 - - 2.7 - 35 Low Level Input Current IIL VIN = 0V, Full Operating Conditions High Level Input Current IIH VIN = 5V, Full Operating Conditions Input Voltage Hysteresis -145 -100 -1 - V - - - mV -60 -150 -50 A +1 -10 +10 A TURN-ON DELAY PIN DEL Dead Time TDEAD RDEL = 100K 2.5 4.5 8.0 2.0 8.5 S RDEL = 10K 0.27 0.5 0.75 0.2 0.85 S IOUT = 50mA 0.65 1.1 0.5 1.2 V GATE DRIVER OUTPUT PINS: ALO, BLO, AHO, & BHO Low Level Output Voltage VOL High Level Output Voltage VDD-VOH IOUT = -50mA 0.7 1.2 0.5 1.3 V Peak Pullup Current IO + VOUT = 0V 1.1 1.4 2.5 0.85 2.75 A Peak Pulldown Current IO- VOUT = 12V 1.0 1.3 2.3 0.75 2.5 A 3 Specifications HIP4082 Switching Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL= 100K, CL = 1000pF. TJ = -55oC TO +150oC TJ = +25oC PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS Lower Turn-off Propagation Delay (ALI-ALO, BLI-BLO) TLPHL - 25 50 - 70 ns Upper Turn-off Propagation Delay (AHI-AHO, BHI-BHO) THPHL - 55 80 - 100 ns Lower Turn-on Propagation Delay (ALI-ALO, BLI-BLO) TLPLH - 40 85 - 100 ns Upper Turn-on Propagation Delay (AHI-AHO, BHI-BHO) THPLH - 75 110 - 150 ns Rise Time TR - 9 20 - 25 ns Fall Time TF - 9 20 - 25 ns TPWIN-ON/OFF 50 - - 50 - ns 80 ns Minimum Input Pulse Width Output Pulse Response to 50 ns Input Pulse 63 TPWOUT Disable Turn-off Propagation Delay (DIS - Lower Outputs) TDISLOW - 50 80 - 90 ns Disable Turn-off Propagation Delay (DIS - Upper Outputs) TDISHIGH - 75 100 - 125 ns Disable Turn-on Propagation Delay (DIS - ALO & BLO) TDLPLH - 40 70 - 100 ns Disable Turn-on Propagation Delay (DIS- AHO & BHO) TDHPLH - 1.2 2 - 3 s Refresh Pulse Width (ALO & BLO) TREF-PW 375 580 900 350 950 ns RDEL = 10K TRUTH TABLE INPUT OUTPUT ALI, BLI AHI, BHI VDDUV VHBUV DIS ALO, BLO AHO, BHO X X X X 1 0 0 X X 1 X X 0 0 0 X 0 1 0 0 0 1 X 0 X 0 1 0 0 1 0 0 0 0 1 0 0 0 0 0 0 0 NOTE: X signifies that input can be either a "1" or "0". 4 HIP4082 Pin Descriptions PIN NUMBER SYMBOL DESCRIPTION 1 BHB B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to this pin. 2 BHI B High-side Input. Logic level input that controls BHO driver (Pin 16). BLI (Pin 3) high level input overrides BHI high level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides BHI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). An internal 100A pull-up to VDD will hold BHI high, so no connection is required if high-side and low-side outputs are to be controlled by the low-side input. 3 BLI B Low-side Input. Logic level input that controls BLO driver (Pin 14). If BHI (Pin 2) is driven high or not connected externally then BLI controls both BLO and BHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin 8) high level input overrides BLI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). An internal 100A pull-up to VDD will hold BLI high if this pin is not driven. 4 ALI A Low-side Input. Logic level input that controls ALO driver (Pin 13). If AHI (Pin 7) is driven high or not connected externally then ALI controls both ALO and AHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin 8) high level input overrides ALI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). An internal 100A pull-up to VDD will hold ALI high if this pin is not driven. 5 DEL Turn-on DELay. Connect resistor from this pin to VSS to set timing current that defines the dead time between drivers. All drivers turn-off with no adjustable delay, so the DEL resistor guarantees no shoot-through by delaying the turn-on of all drivers. The voltage across the DEL resistor is approximately Vdd -2V. 6 VSS Chip negative supply, generally will be ground. 7 AHI A High-side Input. Logic level input that controls AHO driver (Pin 10). ALI (Pin 4) high level input overrides AHI high level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides AHI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). An internal 100A pull-up to VDD will hold AHI high, so no connection is required if high-side and low-side outputs are to be controlled by the low-side input. 8 DIS DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of 0V to 15V (no greater than VDD). An internal 100A pull-up to VDD will hold DIS high if this pin is not driven. 9 AHB A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to this pin. 10 AHO A High-side Output. Connect to gate of A High-side power MOSFET. 11 AHS A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 12 VDD Positive supply to control logic and lower gate drivers. De-couple this pin to VSS (Pin 6). 13 ALO A Low-side Output. Connect to gate of A Low-side power MOSFET. 14 BLO B Low-side Output. Connect to gate of B Low-side power MOSFET. 15 BHS B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 16 BHO B High-side Output. Connect to gate of B High-side power MOSFET. 5 HIP4082 Timing Diagrams X = A OR B, A AND B HALVES OF BRIDGE CONTROLLER ARE INDEPENDENT TLPHL THPHL DIS=0 and UV XLI XHI XLO XHO THPLH TLPLH TR (10% - 90%) FIGURE 1. INDEPENDENT MODE DIS=0 and UV XLI XHI = HI OR NOT CONNECTED XLO XHO FIGURE 2. BISTATE MODE TDLPLH DIS or UV TDIS TREF-PW XLI XHI XLO XHO TDHPLH FIGURE 3. DISABLE FUNCTION 6 TF (10% - 90%) HIP4082 Performance Curves 16 200kHz 15 3.25 VDD = 16V 3 IDD SUPPLY CURRENT (mA) IDD SUPPLY CURRENT (mA) 3.5 VDD = 15V 2.75 2.5 VDD = 12V 2.25 VDD = 10V 2 VDD = 8V 1.75 1.5 -60 -40 -20 0 20 40 60 80 100 JUNCTION TEMPERATURE (oC) 120 14 13 12 11 10 8 FIGURE 4. IDD SUPPLY CURRENT vs TEMPERATURE AND VDD SUPPLY VOLTAGE 50kHz 7 6 5 4 140 100kHz 9 10kHz -60 7 PEAK GATE CURRENT (A) LOADED, NL BIAS CURRENTS (mA) 1.925 6 5 4 1000pF LOAD 3 NO LOAD 2 -20 100 FREQUENCY (kHz) 150 140 2 1.5 SINK ISNK(BIAS) 1 0.75 8 8 200 FIGURE 6. FLOATING (IXHB) BIAS CURRENT vs FREQUENCY AND LOAD SOURCE ISRC(BIAS) 1.25 0.815 0.5 50 120 1.75 1 0 0 20 40 60 80 100 JUNCTION TEMPERATURE (oC) FIGURE 5. VDD SUPPLY CURRENT vs TEMPERATURE AND SWITCHING FREQUENCY (1000pF LOAD) 8 0 -40 9 10 11 12 13 14 BIAS BIAS SUPPLY VOLTAGE (V) AT 25oC 15 15 FIGURE 7. GATE SOURCE/SINK PEAK CURRENT vs BIAS SUPPLY VOLTAGE AT 25oC 1.2 -40oC 1.1 -55oC 1.2 VDD-VOH (V) NORMALIZED GATE SINK/SOURCE CURRENT (A) 1.4 1 0oC 25oC 1 125oC 150oC 0.8 0.9 0.6 0.8 -75 -50 -25 0 25 50 75 100 JUNCTION TEMPERATURE (oC) 125 150 8 FIGURE 8. GATE CURRENT vs TEMPERATURE, NORMALIZED TO 25oC 9 10 11 12 13 VDD SUPPLY VOLTAGE (V) 14 FIGURE 9. VDD-VOH vs BIAS VOLTAGE TEMPERATURE 7 15 HIP4082 Performance Curves (Continued) 8 VDD, BIAS SUPPLY VOLTAGE (V) 1.4 VOL (V) 1.2 -40oC o -55 C 0oC 25oC 1 0.8 125oC o 150 C 0.6 8 9 10 11 12 13 VDD SUPPLY VOLTAGE (V) 14 7 LOWER U/V SET 6.5 6 UPPER U/V SET/RESET 5.5 5 -60 15 FIGURE 10. VOL vs BIAS VOLTAGE AND TEMPERATURE -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (oC) 104 80 DIS TO TURN-ON/OFF TIME (ns) 90 UPPER tON 70 60 UPPER tOFF LOWER tON 50 40 30 LOWER tOFF DISHTON 1000 DISHTOFF 100 DISLOFF DISLTON 20 -60 -40 -20 0 20 40 60 80 JUNCTION TEMPERATURE 100 120 10 140 160 -20 0 20 40 60 80 100 JUNCTION TEMPERATURE (oC) 120 140 160 FIGURE 13. UPPER/LOWER DIS(ABLE) TO TURN-ON/OFF vs TEMPERATURE (oC) 2 2.5 TOTAL POWER DISSIPATION (W) LEVEL-SHIFT CURRENT (mA) -60 -40 (oC) FIGURE 12. UPPER LOWER TURN-ON / TURN-OFF PROPAGATION DELAY vs TEMPERATURE 1.5 1 0.5 140 160 FIGURE 11. UNDERVOLTAGE TRIP VOLTAGES vs TEMPERATURE 100 PROPAGATION DELAYS (ns) LOWER U/V RESET 7.5 0 20 40 60 80 SWITCHING FREQUENCY (kHz) 2 16 PIN DIP 1.5 SOIC 1 0.5 QUIESCENT BIAS COMPONENT 0 100 FIGURE 14. FULL BRIDGE LEVEL-SHIFT CURRENT vs FREQUENCY (kHz) -60 -30 0 30 60 90 AMBIENT TEMPERATURE (oC) 120 FIGURE 15. MAXIMUM POWER DISSIPATION vs AMBIENT TEMPERATURE 8 150 HIP4082 Performance Curves (Continued) 104 90 VDD = 15V VDD = 12V VXHS-VSS DEAD TIME (ns) 85 VDD = 9V 1000 80 75 100 0 10 20 30 40 50 60 70 DEAD TIME RESISTANCE (k) 80 70 90 100 FIGURE 16. DEAD-TIME vs DEL RESISTANCE AND BIAS SUPPLY (VDD) VOLTAGE 100 50 0 50 TEMPERATURE (oC) 100 150 FIGURE 17. MAXIMUM OPERATING PEAK AHS/BHS VOLTAGE vs TEMPERATURE 9 HIP4082 Dual-In-Line Plastic Packages (PDIP) E16.3 (JEDEC MS-001-BB ISSUE D) N 16 LEAD DUAL-IN-LINE PLASTIC PACKAGE E1 INDEX AREA 1 2 3 INCHES N/2 -B- -AE D BASE PLANE A2 -C- SEATING PLANE A L D1 e B1 D1 B 0.010 (0.25) M A1 eC C A B S MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A - 0.210 - 5.33 4 A1 0.015 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - C L B1 0.045 0.070 1.15 1.77 8, 10 eA C 0.008 0.014 D 0.735 0.775 18.66 D1 0.005 - 0.13 - 5 E 0.300 0.325 7.62 8.25 6 E1 0.240 0.280 6.10 7.11 5 C eB NOTES: 1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control. e 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication No. 95. 4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3. 0.100 BSC eA 0.300 BSC eB - L 0.115 N 0.204 16 0.355 19.68 5 2.54 BSC - 7.62 BSC 6 0.430 - 0.150 2.93 16 10.92 7 3.81 4 9 Rev. 0 12/93 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). 10 HIP4082 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) N 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INDEX AREA 0.25(0.010) M H B M INCHES E -B1 2 3 L SEATING PLANE -A- A D hx -C- e C 0.10(0.004) C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3859 0.3937 9.80 10.00 3 E 0.1497 0.1574 3.80 4.00 4 e A1 B 0.25(0.010) M 45o B S 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N NOTES: MILLIMETERS 16 0 o 16 o 8 0 o 7 o 8 Rev. 0 12/93 1. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E" does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width "B", as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch) 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2-724-2111 SOUTH ASIA Harris Semiconductor H.K. Ltd. 13/F Fourseas Building 208-212 Nathan Road Tsimshatsui, Kowloon Hong Kong TEL: (852) 723-6339 S E M I C O N D U C T O R 11 NORTH ASIA Harris K.K. Kojimachi-Nakata Bldg. 4F 5-3-5 Kojimachi Chiyoda-ku, Tokyo 102 Japan TEL: (81) 3-3265-7571 TEL: (81) 3-3265-7572 (Sales)