IRF7380PBF - INFINEON TECHNOLOGIES AG

HEXFET® Power MOSFET

lHigh frequency DC-DC converters

lLead-Free

Benefits

Applications

lLow Gate to Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

Notes  through  are on page 8

SO-8

VDSS RDS(on) max ID

80V 73m

@VGS = 10V 3.6A

Top View

IRF7380PbF

Absolute Maximum Ratings

Parameter Units

VDS Drain-to-Source Voltage V

VGS Gate-to-Source Voltage

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V

ID @ TA = 100°C Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current

PD @TA = 25°C Maximum Power Dissipation W

Linear Derating Factor W/°C

dv/dt Peak Diode Recovery dv/dt

V/ns

TJ Operating Junction and °C

TSTG Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead ––– 42 °C/W

RθJA Junction-to-Ambient (PCB Mount)

––– 62.5

Max.

3.6

2.9

± 20

0.02

2.3

2.0

-55 to + 150

IRF7380PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

(

)

DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V

∆V

(

)

DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C

RDS

(

)

Static Drain-to-Source On-Resistance ––– 61 73 mΩ

VGS

(

)

Gate Threshold Voltage 2.0 ––– 4.0 V

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

gfs Forward Transconductance 4.3 ––– ––– S

Total Gate Charge ––– 15 23

sGate-to-Source Charge ––– 2.9 ––– nC

dGate-to-Drain ("Miller") Charge ––– 4.5 –––

(

)

Turn-On Delay Time ––– 9.0 –––

trRise Time ––– 10 –––

(

off

)

Turn-Off Delay Time ––– 41 ––– ns

tfFall Time ––– 17 –––

Ciss Input Capacitance ––– 660 –––

Coss Output Capacitance ––– 110 –––

Crss Reverse Transfer Capacitance ––– 15 ––– pF

Coss Output Capacitance ––– 710 –––

Coss Output Capacitance ––– 72 –––

Coss eff. Effective Output Capacitance ––– 140 –––

Avalanche Characteristics

Parameter Units

EAS Single Pulse Avalanche Energy

IAR Avalanche Current

c

Diode Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current ––– ––– 3.6 A

(Body Diode)

ISM Pulsed Source Current ––– ––– 29 A

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 50 ––– ns

Qrr Reverse Recovery Charge ––– 110 ––– nC

2.2

Typ.

–––

Conditions

VDS = 25V, ID = 2.2A

ID = 2.2A

VDS = 40V

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Conditions

VGS = 10V

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

TJ = 25°C, IS = 2.2A, VGS = 0V

TJ = 25°C, IF = 2.2A, VDD = 40V

di/dt = 100A/µs

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 2.2A

VDS = VGS, ID = 250µA

VDS = 80V, VGS = 0V

VDS = 64V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

Max.

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 64V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 64V

VGS = 10V

VDD = 40V

ID = 2.2A

RG = 24Ω

IRF7380PbF

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

V =

I =

10V

3.6A

3.0 4.0 5.0 6.0 7.0

VGS, Gate-to-Source Voltage (V)

100

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 150°C

VDS = 15V

20µs PULSE WIDTH

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

3.7V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V

10V

7.0V

5.0V

4.5V

4.3V

4.0V

BOTTOM 3.7V

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

100

ID, Drain-to-Source Current (A)

3.7V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

7.0V

5.0V

4.5V

4.3V

4.0V

BOTTOM 3.7V

TJ, Junction Temperature (°C)

RDS(on), Drain-to-Source On Resistance

(Normalized)

IRF7380PbF

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.0 0.5 1.0 1.5 2.0

V = 0 V

T = 150 C

J°

T = 25 C

J°

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

Fig 8. Maximum Safe Operating Area

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

SHORTED

Crss

= C

Coss

= C

+ C

Coss

Crss

Ciss

0 2 4 6 8 10 12 14 16

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 64V

VDS= 40V

VDS= 16V

ID= 2.1A

VSD, Source-to-Drain Voltage (V)

ISD, Reverse Drain Current (A)

IRF7380PbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

I , Drain Current (A)

TA , Ambient Temperature (°C)

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes :

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7380PbF

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Charge

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150

120

160

200

TOP

BOTTOM

1.0A

1.8A

2.2A

0 5 10 15 20 25 30

ID , Drain Current (A)

RDS (on) , Drain-to-Source On Resistance (mΩ)

VGS = 10V

3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate -to -Source Voltage (V)

100

200

300

400

500

600

700

800

RDS(on), Drain-to -Source On Resistance (mΩ)

ID = 3.6A

Starting TJ, Junction Temperature (°C)

EAS, Single Pulse Avalanche Energy (mJ)

IRF7380PbF

SO-8 Package Outline(Mosfet & Fetky)

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Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRF7380PbF

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting TJ = 25°C, L = 31mH

RG = 25Ω, IAS = 2.2A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

 When mounted on 1 inch square copper board.

 Coss eff. is a fixed capacitance that gives the same charging time as

Coss while VDS is rising from 0 to 80% VDSS.

ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Date Comments

09/16/2013 •



Updated the Rthja from 50°C/W to 62.5°C/W, on page 1.

•



Converted the data sheet to IR Corproate Template.

Revision History