2N7000G - SUPERTEX - Product.Network

Supertex inc.

www.supertex.com

2N7000

Doc.# DSFP-2N7000

C062813

Features

►Free from secondary breakdown

►Low power drive requirement

►Ease of paralleling

►Low CISS and fast switching speeds

►Excellent thermal stability

►Integral source-drain diode

►High input impedance and high gain

Applications

►Motor controls

►Converters

►Ampliers

►Switches

►Power supply circuits

►Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

General Description

The Supertex 2N7000 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Absolute Maximum Ratings

Parameter Value

Drain-to-Source voltage BVDSS

Drain-to-Gate voltage BVDGS

Gate-to-Source voltage ±30V

Operating and storage temperature -55°C to +150°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Pin Conguration

N-Channel Enhancement-Mode

Vertical DMOS FETs

GATE

SOURCE

DRAIN

TO-92

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Si2N

7000

YYWW

Package may or may not include the following marks: Si or

Product Marking

Ordering Information

Part Number Package Option Packing

2N7000-G TO-92 1000/Bag

2N7000-G P002 TO-92 2000/Reel

2N7000-G P003 TO-92 2000/Reel

2N7000-G P005 TO-92 2000/Reel

2N7000-G P013 TO-92 2000/Reel

2N7000-G PO14 TO-92 2000/Reel

Product Summary

BVDSX/BVDGS

RDS(ON)

(max)

ID(ON)

(min)

60V 5.0Ω75mA

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Typical Thermal Characteristics

Package θja

TO-92 132OC/W

* Mounted on FR4 board; 25mm x 25mm x 1.57mm

2

2N7000

Supertex inc.

www.supertex.com

Doc.# DSFP-2N7000

C0628213

Electrical Characteristics (TA = 25°C unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

BVDSS Drain-to-Source breakdown voltage 60 - - V VGS = 0V, ID = 10µA

VGS(th) Gate threshold voltage 0.8 - 3.0 V VGS = VDS, ID = 1.0mA

IGSS Gate body leakage current - - 10 nA VGS = ±15V, VDS = 0V

IDSS Zero Gate voltage drain current

- - 1.0 µA VGS = 0V, VDS = 48V

- - 1.0 mA VGS = 0V, VDS = 48V,

TA = 125OC

ID(ON) On-state drain current 75 - - mA VGS = 4.5V, VDS = 10V

RDS(ON)

Static Drain-to-Source

on-state resistance

- - 5.3 ΩVGS = 4.5V, ID = 75mA

- - 5.0 VGS = 10V, ID = 500mA

GFS Forward transconductance 100 - - mmho VDS = 10V, ID = 200mA

CISS Input capacitance - - 60

pF VGS = 0V, VDS = 25V,

f = 1.0MHz

COSS Common Source output capacitance - - 25

CRSS Reverse transfer capacitance - - 5

t(ON) Turn-on time - - 10 ns VDD = 15V, ID = 500mA,

RGEN = 25Ω

t(OFF) Turn-off time - - 10

VSD Diode forward voltage drop - 0.85 - V VGS = 0V, ISD = 200mA

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

Thermal Characteristics

Package ID

(continuous)†

ID

(pulsed)

Power Dissipation

@TC = 25OCIDR

†IDRM

TO-92 200mA 500mA 1.0W 200mA 500mA

Notes:

† ID (continuous) is limited by max rated Tj.

90%

10%

90% 90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

r

INPUT

OUTPUT

10V

VDD

RGEN

0V

t

f

3

2N7000

Supertex inc.

www.supertex.com

Doc.# DSFP-2N7000

C0628213

Typical Performance Curves

2.5

2.0

1.5

1.0

0.5

00 10 20 30 40 50 0 2 4 6 8 10

0.1 1.0 10 100

1.0

0.1

0.01

0.001

1.0

0.8

0.6

0.4

0.2

0

1.0

0.8

0.6

0.4

0.2

0

0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150

2.0

1.0

0

TO-92

T

A

= -55

O

C

25

O

C

TO-92 (pulsed)

8V

6V

4V

0.001 0.01 0.1 1.0 10

8V

6V

4V

TO-92 (DC)

T

C

= 25

O

C

TO-92

P

D

= 1.0W

T

C

= 25

O

C

V

GS

= 10V

Saturation Characteristics

Maximum Rated Safe Operating Area Thermal Response Characteristics

Thermal Resistance (normalized)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

Output Characteristics

I

D

(amperes)

V

DS

(volts)

G

FS

(seimens)

P

D

(watts)

T

C

(

O

C)

I

D

(amperes)

V

DS

(volts) t

p

(seconds)

I

D

(amperes)

V

DS

(volts)

I

D

(amperes)

V

GS

= 10V

V

DS

= 25V

125

O

C

2.5

2.0

1.5

1.0

0.5

0

4

2N7000

Supertex inc.

www.supertex.com

Doc.# DSFP-2N7000

C0628213

Typical Performance Curves (cont.)

0 2 4 6 8 10

2.5

2.0

1.5

1.0

0.5

0

-50 0 50 100 150

1.1

1.0

0.9

0 0.5 1.0 1.5 2.0 2.5

1.6

1.4

1.2

1.0

0.8

0.6

10

8

6

4

2

00 0.2 0.4 0.6 0.8 1.0

VDS = 10V

V(th) @ 1.0mA

VGS = 4.5V

5.0

4.0

3.0

2.0

1.0

0

TA = -55OC

25OC

40 pF

40V

80 pF

1.9

1.6

1.3

1.0

0.7

0.4

100

75

50

25

0

0 10 20 30 40

f = 1MHz

CISS

C

OSS

CRSS

RDS @ 10V, 1.0A

Gate Drive Dynamic Characteristics

QG (nanocoulombs)

VGS(th) (normalized)

RDS(ON) (normalized)

V

(th)

and R

DS

Variation with Te mperature

On-Resistance vs. Drain Current

BV

DSS

Variation with Temperature

BVDSS (normalized)

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

C (picofarads)

ID (amperes)

TJ (OC)

RDSS(ON) (ohms)

ID (amperes)

VGS (volts)

VDS (volts)

VGS (volts)

Tj (OC)

VGS = 10V

VDS = 25V

125OC

-50 0 50 100 150

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

5

2N7000

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-2N7000

C062813

3-Lead TO-92 Package Outline (N3)

Symbol A b c D E E1 e e1 L

Dimensions

(inches)

MIN .170 .014†.014†.175 .125 .080 .095 .045 .500

NOM - - - - - - - - -

MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Seating

Plane

1

2

3

Front View Side View

Bottom View

E1 E

D

e1

L

e

c

1 2 3

b

A