TSOP58240RR - Vishay Presicion Group

TSOP582..

Document Number 81221

Rev. 1.0, 16-Nov-05

Vishay Semiconductors

www.vishay.com

IR Receiver Modules for Remote Control Systems

Description

The TSOP582.. - series are miniaturized receivers for

infrared remote control systems. PIN diode and

preamplifier are assembled on lead frame, the epoxy

package is designed as IR filter.

The demodulated output signal can directly be

decoded by a microprocessor. TSOP582.. is the stan-

dard IR remote control receiver series, supporting all

major transmission codes.

Features

• Photo detector and preamplifier in one

package

• Build in filter for carrier frequency of IR

signal

• Shielding against electrical field

disturbance

• TTL and CMOS compatibility

• Output active low

• Low power consumption

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Special Features

• Improved immunity against ambient light

• Suitable burst length ≥ 10 cycles/burst

Mechanical Data

Pinning:

1 = OUT, 2 = GND, 3 = VS

Parts Table

Block Diagram Application Circuit

Part Carrier Frequency

TSOP58230 30 kHz

TSOP58233 33 kHz

TSOP58236 36 kHz

TSOP58237 36.7 kHz

TSOP58238 38 kHz

TSOP58240 40 kHz

TSOP58256 56 kHz

30 kΩ

OUT

Demo-

GND

Pass

AGCInput

Band dulator

Control Circuit

16833

4.7 µF

TSOPxxxx

OUT

GND

Circuit

µC

= 100 Ω

GND

Transmitter

with

TSALxxxx V

recommended to suppress power supply

disturbances.

16842

The outputvoltage should not be hold continuously a

avoltage belowV

3.3 Vby the external circuit.

19026

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Document Number 81221

Rev. 1.0, 16-Nov-05

TSOP582..

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Electrical and Optical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Supply Voltage (Pin 3) VS- 0.3 to + 6.0 V

Supply Current (Pin 3) IS5mA

Output Voltage (Pin 1) VO- 0.3 to + (Vs + 0.3) V

Output Current (Pin 1) IO10 mA

Junction Temperature Tj100 °C

Storage Temperature Range Tstg - 25 to + 85 °C

Operating Temperature Range Tamb - 25 to + 85 °C

Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW

Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C

Parameter Test condition Symbol Min Typ. Max Unit

Supply Current (Pin 3) VS = 5 V, Ev = 0 ISD 0.8 1.2 1.5 mA

VS = 5 V, Ev = 40 klx, sunlight ISH 1.5 mA

Supply Voltage VS4.5 5.5 V

Transmission Distance

Ev = 0, test signal see fig.1,

IR diode TSAL6200,

IF = 400 mA

d35m

Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2,

test signal see fig. 1 VOSL 250 mV

Minimum Irradiance

(30 - 40 kHz)

Pulse width tolerance:

tpi - 5/fo < tpo < tpi + 6/fo,

test signal see fig.1

Ee min 0.35 0.5 mW/m2

Minimum Irradiance (56 kHz)

Pulse width tolerance:

tpi - 5/fo < tpo < tpi + 6/fo,

test signal see fig.1

Ee min 0.4 0.6 mW/m2

Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,

test signal see fig. 1 Ee max 30 W/m2

Directivity Angle of half transmission

distance ϕ1/2 ± 45 deg

TSOP582..

Document Number 81221

Rev. 1.0, 16-Nov-05

Vishay Semiconductors

www.vishay.com

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Output Function

Figure 2. Pulse Length and Sensitivity in Dark Ambient

Figure 3. Output Function

tpi *

* tpi w10/fo is recommended for optimal function

VOH

VOLt

16110

Optical Test Signal

(IR diode TSAL6200, I

= 0.4 A, 30 pulses, f = f

, T = 10 ms)

Output Signal

td1)tpo2)

1) 7/f0<td<15/f0

2) tpi–5/f0<tpo < tpi+6/f0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance (mW/m²)

16908

Input Burst Duration

= 950 nm,

optical test signal, fig.1

Output Pulse

t – Output Pulse Width (ms)

VOH

VOLt

600 ms 600 ms

T = 60 ms

Ton Toff

94 8134

Optical Test Signal

Output Signal, ( see Fig.4 )

Figure 4. Output Pulse Diagram

Figure 5. Frequency Dependence of Responsivity

Figure 6. Sensitivity in Bright Ambient

T ,T – Output Pulse Width (ms)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance (mW/m²)

16909

To ff

= 950 nm,

optical test signal, fig.3

To n

on off

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.7 0.9 1.1 1.3

f/f0 – Relative Frequency16925

f = f05 %

f ( 3dB ) = f0/10

E / E – Rel. Responsivity

e min e

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.01 0.10 1.00 10.00 100.00

E – Ambient DC Irradiance (W/m2)16911

Correlation with ambient light sources:

10 W/m21.4 klx (Std.illum.A, T= 2855 K)

10 W/m28.2 klx (Daylight, T = 5900 K)

Ambient, = 950 nm

E – Threshold Irradiance (mW/m )

e min

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Document Number 81221

Rev. 1.0, 16-Nov-05

TSOP582..

Vishay Semiconductors

Figure 7. Sensitivity vs. Supply Voltage Disturbances

Figure 8. Max. Envelope Duty Cycle vs. Burstlength

Figure 9. Sensitivity vs. Ambient Temperature

0.0

0.5

1.0

1.5

2.0

0.1 1.0 10.0 100.0 1000.0

VsRMS – AC Voltage on DC Supply Voltage (mV)

16912

f = fo

f = 10 kHz

E – Threshold Irradiance (mW/m²)

e min

f = 1 kHz

f = 100 Hz

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

02040 60 80 100 120

Burst Length ( number of cycles / burst )

16913

f = 38 kHz, Ee = 2 mW/m2

Max. Envelope Duty Cycle

0.0

0.1

0.2

0.3

0.4

0.5

0.6

–30–150 153045607590

Tamb – Ambient Temperature (°C)

16918

Sensitivity in dark ambient

E – Threshold Irradiance (mW/m²)

e min

Figure 10. Relative Spectral Sensitivity vs. Wavelength

Figure 11. Horizontal Directivity ϕx

Figure 12. Vertical Directivity ϕy

750 850 950 1050

0.2

0.4

0.6

0.8

1.2

S ( ) – Relative Spectral Sensitivity

rel

– W avelength (nm)

1150

94 8408

1.0

19258

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°

30°

10°20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel - Relative Transmission Distance

19259

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°

30°

10°20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel - Relative Transmission Distance

TSOP582..

Document Number 81221

Rev. 1.0, 16-Nov-05

Vishay Semiconductors

www.vishay.com

Suitable Data Format

The circuit of the TSOP582.. is designed in that way

that unexpected output pulses due to noise or distur-

bance signals are avoided. A bandpass filter, an inte-

grator stage and an automatic gain control are used

to suppress such disturbances.

The distinguishing mark between data signal and dis-

turbance signal are carrier frequency, burst length

and duty cycle.

The data signal should fulfill the following conditions:

• Carrier frequency should be close to center fre-

quency of the bandpass (e.g. 38 kHz).

• Burst length should be 10 cycles/burst or longer.

• After each burst which is between 10 cycles and 70

cycles a gap time of at least 14 cycles is necessary.

• For each burst which is longer than 1.8 ms a corre-

sponding gap time is necessary at some point in the

data stream. This gap time should be at least 4 times

longer than the burst.

• Up to 800 short bursts per second can be received

continuously.

Some examples for suitable data format are: NEC

Code (repetitive pulse), NEC Code (repetitive data),

Toshiba Micom Format, Sharp Code, RC5 Code,

RC6 Code, R-2000 Code, Sony Code.

When a disturbance signal is applied to the

TSOP582.. it can still receive the data signal. How-

ever the sensitivity is reduced to such a level that no

unexpected pulses will occur.

Some examples for such disturbance signals which

are suppressed by the TSOP582.. are:

• DC light (e.g. from tungsten bulb or sunlight)

• Continuous signal at 38 kHz or at any other fre-

quency

• Signals from fluorescent lamps with electronic bal-

last with high or low modulation

(see Figure 13 or Figure 14).

Figure 13. IR Signal from Fluorescent Lamp with low Modulation

Figure 14. IR Signal from Fluorescent Lamp with high Modulation

0 5 10 15 20

Time (ms)

16920

IR Signal

IR Signal from fluorescent

lamp with low modulation

0 5 10 15 20

Time (ms)

16921

IR Signal

IR Signal from fluorescent

lamp with high modulation

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Document Number 81221

Rev. 1.0, 16-Nov-05

TSOP582..

Vishay Semiconductors

Package Dimensions in mm

19009

TSOP582..

Document Number 81221

Rev. 1.0, 16-Nov-05

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1

Notice

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