BFR182W NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 * fT = 8 GHz, F = 0.9 dB at 900 MHz * Pb-free (RoHS compliant) package * Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR182W Marking RGs 1=B Pin Configuration 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 250 mW Junction temperature TJ 150 C Ambient temperature TA -55 ... 150 Storage temperature T Stg -55 ... 150 V mA TS 90 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 240 K/W 1T S is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2010-04-06 BFR182W Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 12 - - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 4 V, VBE = 0 - 1 30 VCE = 15 V, VBE = 0 V, TA = 85 C - 5 70 ICBO - 1 30 IEBO - - 50 hFE 70 100 140 (verified by random sampling) Collector-base cutoff current VCB = 4 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 10 mA, VCE = 8 V, pulse measured 2 2010-04-06 BFR182W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.34 0.5 Cce - 0.26 - Ceb - 0.8 - GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 3 mA, VCE = 8 V, ZS = ZSopt, - 0.9 - - 1.3 - G ms - 19 - dB G ma - 12.5 - dB f = 900 MHz IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt , f = 1.8 GHz |S 21e|2 Transducer gain dB IC = 10 mA, VCE = 8 V, Z S = ZL = 50 , f = 900 MHz - 15.5 - - 10 - IC = 10 mA, VCE = 8 V, Z S = ZL = 50 , f = 1.8 GHz 1G ms = |S 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k-1) ) 2G 3 2010-04-06 BFR182W Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 300 mW RthJS Ptot K/W 200 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2010-04-06 BFR182W SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 5 2010-04-06 Package SOT323 BFR182W Package Outline 0.9 0.1 2 0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 0.1 0.1 MIN. 2.1 0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 6 2010-04-06 BFR182W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2010-04-06