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FJY4002R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description * 100 mA Output Current Capability * Built-in Bias Resistor (R1 = 10 k, R2 = 10 k) Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Application * Switching, Interface, and Driver Circuits * Inverters * Digital Applications in Industrial Segments Equivalent Circuit C C R1 B E R2 B SOT - 523F E Ordering Information Part Number Top Mark Package Packing Method FJY4002R S52 SOT-523F 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA TJ Junction Temperature 150 C -55 to 150 C TSTG Parameter Storage Temperature Range (c) 2006 Fairchild Semiconductor Corporation FJY4002R Rev. 1.1.2 www.fairchildsemi.com 1 FJY4002R -- PNP Epitaxial Silicon Transistor with Bias Resistor November 2013 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Value Unit Power Dissipation Parameter 200 mW Derate Above TA = 25C 1.60 mW/C Thermal Resistance, Junction to Ambient 625 C/W Note: 1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics(2) Values are at TC = 25C unless otherwise noted. Symbol Parameter Conditions V(BR)CBO Collector-Emitter Breakdown Voltage IC = -10 A, IE = 0 V(BR)CEO Collector-Base Breakdown Voltage IC = -100 A, IB = 0 Collector Cut-Off Current VCB = -40 V, IE = 0 DC Current Gain VCE = -5 V, IC = -5 mA Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) Min. Typ. Max. Unit -50 V -50 V -0.1 A -0.3 V 30 Current Gain Bandwidth Product VCE = -10 V, IC = -5 mA 200 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 5.5 pF Input-Off Voltage VCE = -5 V, IC = -100 A Input-On Voltage VCE = -0.3 V, IC = -10 mA -0.5 V k -3 V R1 Input Resistor 7 10 13 R1/R2 Resistor Ratio 0.9 1.0 1.1 Note: 2. Pulse test: pulse width 300 s, duty cycle 2%. (c) 2006 Fairchild Semiconductor Corporation FJY4002R Rev. 1.1.2 www.fairchildsemi.com 2 FJY4002R -- PNP Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics(1) 1000 -100 VCE = - 0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = - 5V R1 = 10 K R2 = 10 K 100 10 -1 -10 -100 -10 -1 -0.1 -0.1 -1000 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Input-On Voltage -1000 240 PC[mW], POWER DISSIPATION IC [A], COLLECTOR CURRENT 280 VCE = - 5V R1 = 10 K R2 = 10 K -100 -10 -0.0 200 160 120 80 40 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -2.4 50 75 100 125 150 175 o VI(off)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 3. Input-Off Voltage (c) 2006 Fairchild Semiconductor Corporation FJY4002R Rev. 1.1.2 25 Figure 4. Power Derating www.fairchildsemi.com 3 FJY4002R -- PNP Epitaxial Silicon Transistor with Bias Resistor Typical Performance Characteristics FJY4002R -- PNP Epitaxial Silicon Transistor with Bias Resistor Physical Dimensions SOT-523F 1.70 1.50 A 0.50 0.35 0.25 0.50 B 3 0.98 0.78 1.60 1 2 1.14 1.80 0.1 C B A (0.15) 0.50 0.66 0.50 1.00 TOP VIEW LAND PATTERN RECOMMENDATION 0.78 0.58 0.20 0.04 SEE DETAIL A C 0.43 0.28 0.54 0.34 BOTTOM VIEW DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DRAWING CONFORMS TO ASME Y14.5M-1994 D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. MAD03ArevA Figure 5. 3-LEAD, SC89, EIAJ-SC89, 0.88 MM WIDE, SOT523F (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAD03A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAD03A.pdf. (c) 2006 Fairchild Semiconductor Corporation FJY4002R Rev. 1.1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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