SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 JANUARY 1996
PARTMARKING DETAILS 3B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 3V
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 30 V IC
=1µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 15 V IC
=3mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 3V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 0.05 µAVCB=15V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.4 V IC
=10mA, IB
=1mA
Base-Emitter
Saturation Voltage
VBE(sat) 1.0 V IC=10mA, IB
=1mA
Static Forward Current
Transfer Ratio
hFE 20 IC
=3mA, VCE=1V
Transition Frequency fT600 MHz IC
=4mA, VCE=10V
f=100MHz
Output Capacitance Cobo 3.0
1.7
pF
pF
VCB=0V, f=1MHz
VCB=10V, f=1MHz
Input Capacitance Cibo 1.6 pF VEB=0.5V,f=1MHz
Noise Figure N 6.0 dB VCE=6V, IC
=1mA
f=60MHz, RG
=400Ω
Common Emitter
Power Gain
Gpe 15 dB VCB=12V, IC=6mA
f=200MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMT918
C
B
E
SOT23
3 - 168
