BD433/435/437 NPN Epitaxial Silicon Transistor Features * Medium Power Linear and Switching Applications * Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method BD433S BD433 TO-126 BULK BD435S BD435 TO-126 BULK BD435STU BD435 TO-126 RAIL BD437S BD437 TO-126 BULK Remarks * The suffix "S" of FSID denotes TO126 package. Absolute Maximum Ratings Symbol VCBO VCES VCEO TA = 25C unless otherwise noted Value Units Collector-Base Voltage : BD433 : BD435 : BD437 Parameter 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V Collector-Emitter Voltage : BD433 : BD435 : BD437 22 32 45 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current 1 A PC Collector Dissipation (TC = 25C) 36 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C (c) 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 www.fairchildsemi.com 1 BD433/435/437 -- NPN Epitaxial Silicon Transistor July 2011 TA = 25C unless otherwise noted Symbol Parameter VCEO(sus) Collector-Emitter Sustaining Voltage : BD433 : BD435 : BD437 ICBO Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 22 32 45 Units V V V Collector Cut-off Current : BD433 : BD435 : BD437 VCB = 22V, IE = 0 VCB = 32V, IE = 0 VCB = 45V, IE = 0 100 100 100 A A A Collector Cut-off Current : BD433 : BD435 : BD437 VCE = 22V, VBE = 0 VCE = 32V, VBE = 0 VCE = 45V, VBE = 0 100 100 100 A A A IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 0.5 0.5 0.6 V V V 1.1 1.1 1.2 V V V ICEO VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 IC = 2A, IB = 0.2A 0.2 0.2 0.2 VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 130 130 140 3 MHz * Pulse Test: PW300s, duty Cycle1.5% Pulsed (c) 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 www.fairchildsemi.com 2 BD433/435/437 -- NPN Epitaxial Silicon Transistor Electrical Characteristics 1 1000 100 10 1 0.01 0.1 1 10 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 1V 0.1 0.01 0.1 100 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 5.0 IC[A], COLLECTOR CURRENT CCBO(pF), COLLECTOR BASE CAPACITANCE 1000 VCE = 1V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 100 10 1 0.1 1 Figure 3. Base-Emitter On Voltage 10 100 1000 Figure 4. Collector-Base Capacitance 48 IC MAX. (Pulsed) 10s 42 PC[W], POWER DISSIPATION DC 100s 10 1m ms s IC Max. (Continuous) 1 BD433 BD435 BD437 0.1 1 10 36 30 24 18 12 6 0 100 0 25 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c) 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 10 VCB[V], COLLECTOR BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 10 www.fairchildsemi.com 3 BD433/435/437 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics TO-126 0$; ' ; ; 352'8&7,21 7(50,1$/ /(1*7+' &2'( 76678 7678 127(6 121( $ 7+,63$&.$*('2(6127&203/<72$1< 67'/(1*7+ &85(173$&.$*,1*67$1'$5' % $//',0(16,216$5(,10,//,0(7(56 & ',0(16,216$5((;&/86,9(2)%855602/')/$6+ $1'7,(%$5(;7586,216 ' )257(50,1$//(1*7+6((7$%/( ( '5$:,1*),/(1$0($1'5(9,6,210.772$$UHY Dimensions in Millimeters (c) 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 www.fairchildsemi.com 4 BD433/435/437 -- NPN Epitaxial Silicon Transistor Physical Dimension TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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