MIC2800 Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs Features General Description * 2.7V to 5.5V Input Voltage Range * 2 MHz DC/DC Converter and Two LDOs * Integrated Power-on Reset (POR) - Adjustable POR Delay Time * LOWQ Mode - 30 A Total IQ when in LOWQ Mode * DC/DC Converter - Up to 600 mA of Output Current in PWM Mode - LOWQ Mode: NO RIPPLE Light Load Mode - 75 VRMS Output Noise in LOWQ Mode - 2 MHz PWM Mode Operation - > 90% Efficiency * LDO1 Input Voltage Directly Connected to DC/DC Converter Output Voltage for Maximum Efficiency - Ideal for 1.8V to 1.5V Conversion - 300 mA Output Current from 1.8V Input - Output Voltage Down to 0.8V * LDO2 - 300 mA Output Current Capable * Thermal Shutdown Protection * Current Limit Protection * Simple, Leakage-Free Interfacing to Host MPU in Applications with Backup Power * Tiny 16-Pin 3mm x 3mm QFN Package The MIC2800 is a high-performance power management IC, featuring three output voltages with maximum efficiency. Integrating a 2 MHz DC/DC converter with an LDO post-regulator, the MIC2800 gives two high-efficiency outputs with a second, 300 mA LDO for maximum flexibility. The MIC2800 features a LOWQ mode, reducing the total current draw while in this mode to less than 30 A. In LOWQ mode, the output noise of the DC/DC converter is reduced to 75 VRMS, significantly lower than other converters that use a PFM light load mode that can interfere with sensitive RF circuitry. The DC/DC converter uses small values of L and C to reduce board space but still retains efficiencies over 90% at load currents up to 600 mA. The MIC2800 operates with very small ceramic output capacitors and inductors for stability, reducing required board space and component cost and it is available in various output voltage options in the 16-pin 3mm x 3mm QFN leadless package. Package Type 2017 Microchip Technology Inc. Pin 14 CBYP CSET Pin 13 Pin 15 EN1 LOWQ POR Pin 2 BIAS LDO1 Pin 11 Pin 3 SGND LDO Pin 10 Pin 4 PGND FB Pin 9 LDO2 Pin 12 Pin 8 Pin 7 VIN Pin 1 Pin 6 VIN Embedded MPU and MCU Power Portable and Wearable Applications Low-Power RF Systems Backup Power Systems Pin 5 SW * * * * Pin 16 Applications EN2 MIC2800 16-PIN 3mm X 3mm QFN DS20005839A-page 1 MIC2800 Typical Application Circuit (simplified) MIC2800-G1JS VIN = 5V typ VIN SW VIN LDO C1 4.7 F Enable L1 2.2 H DDR2 VDDIO_DDR 2.2 F SGND PGND 10 F SAMA5D2 MPU EN2 LDO1 VDD_CORE 10 F CBIAS 100 nF CBYP 100 nF BIAS LDO2 VDD_IO 10 F CBYP RC delay EN1 CSET 10 nF CSET POR nRST /LOWQ GPIO Functional Diagram DS20005839A-page 2 2017 Microchip Technology Inc. MIC2800 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Supply Voltage (VIN) ....................................................................................................................................-0.3 to +6.0V Enable Input Voltage (VEN1, EN2) .....................................................................................................-0.3V to +(VIN+0.3V) LOWQ, POR ............................................................................................................................................. -0.3V to +6.0V Power Dissipation (Note 1) .................................................................................................................... Internally Limited Lead Temperature (soldering, 10 sec.) ................................................................................................................. +260C Storage Temperature (TS) ...................................................................................................................... -65C to +150C ESD Rating (Note 2) .................................................................................................................................................. 2 kV Operating Ratings Supply Voltage (VIN) ................................................................................................................................. +2.7V to +5.5V Enable Input Voltage (VEN1, EN2) ..................................................................................................................... 0V to +VIN LOWQ, POR .................................................................................................................................................. 0V to +5.5V Junction Temperature (TJ) ..................................................................................................................... -40C to +125C Junction Thermal Resistance QFN-16 (JA) .......................................................................................................+45C/W Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Notice: The device is not guaranteed to function outside its operating ratings. 1: The maximum allowable power dissipation of any TA (ambient temperature) is PD(max) = (TJ(max) - TA) / JA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. 2: Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5 k in series with 100 pF. 2017 Microchip Technology Inc. DS20005839A-page 3 MIC2800 TABLE 1-1: ELECTRICAL CHARACTERISTICS (Note 1) Electrical Characteristics: VIN = EN1 = EN2 = LOWQ = VOUT (Note 2) + 1V; COUTDC/DC = 2.2 F, COUT1 = COUT2 = 2.2 F; IOUTDC/DC = 100 mA; IOUTLDO1 = IOUTLDO2 = 100 A; TJ = 25C, bold values indicate -40C TJ +125C; unless noted. Parameter Symbol Min. Typ. Max. Units UVLO Threshold UVLOTH 2.45 2.55 2.65 V UVLO Hysteresis UVLOHYS -- 100 -- mV 800 1100 55 85 95 Ground Pin Current Ground Pin Current in Shutdown Ground Pin Current (LOWQ mode) Overtemperature Shutdown Overtemperature Shutdown Hysteresis IGND IGND_SHDN -- -- Conditions Rising input voltage during turn on VFB = GND (not switching); A LDO2 Only (EN1 = LOW) 0.2 5 A 30 20 60 80 70 A A A IGND_LOWQ -- TSD -- 160 -- C TSDHYS -- 23 -- C All EN = 0V All channels ON, IDC/DC = ILDO1 = ILDO2 = 0 mA DC/DC and LDO1 OFF; ILDO2 = 0 mA Enable Inputs (EN1; EN2; /LOWQ) Enable Input Voltage Logic Low VIH -- -- 0.2 V Enable Input Voltage Logic High VIL 1.0 -- -- V Enable Input Current IENLK -- 0.1 1 A VIL 0.2V -- 0.1 1 A VIH 1.0V Turn-on Time Turn-on Time (LDO1 and LDO2) tTURN-ON -- 240 120 500 350 s EN2 = VIN EN1 = VIN Turn-on Time (DC/DC) tTURN-ON -- 83 350 s EN2 = VIN; ILOAD = 300 mA; CBYP = 0.1 F POR Threshold Voltage, Failing VTHLOW_POR 90 91 -- % Low Threshold, % of nominal (VDC/DC or VLDO1 or VLDO2) (Flag ON) POR Threshold Voltage, Rising VTHIGH_POR -- 96 99 % High Threshold, % of nominal (VDC/DC AND VLDO1 AND VLDO2) (Flag OFF) VOL VOLPOR -- 10 100 mV POR Output Logic Low Voltage; IL = 250 A IPOR ILEAKPOR -- 0.01 1 A Flag Leakage Current, Flag OFF ICSET 0.75 1.25 1.75 A VCSET = 0V VTHCSET -- 1.25 -- V POR = High POR Output CSET INPUT CSET Pin Current Source CSET Pin Threshold Voltage Note 1: 2: Specification for packaged product only. VOUT denotes the highest of the three output voltage. DS20005839A-page 4 2017 Microchip Technology Inc. MIC2800 TABLE 1-2: ELECTRICAL CHARACTERISTICS - DC/DC CONVERTER Electrical Characteristics: VIN = VOUTDC/DC + 1V; EN1 = VIN; EN2 = GND; IOUTDC/DC = 100 mA; L = 2.2 H; COUTDC/DC = 2.2 F; TJ = 25C, bold values indicate -40C to + 125C; unless noted. Parameter Symbol Min. Typ. Max. Units Conditions VOUT -2 -3 -- +2 +3 % Fixed Output Voltages Current Limit in PWM Mode ILIM 0.75 1 1.6 A VOUT = 0.9*VNOM FB pin voltage (ADJ only) VFB -- 800 -- mV FB pin input current (ADJ only) IFB -- 1 5 nA LOWQ = High (Full Power Mode) Output Voltage Accuracy VOUT > 2.4V; VIN = VOUT + 300 mV to 5.5V, ILOAD= 100 mA VOUT < 2.4V; VIN = 2.7V to 5.5V, ILOAD= 100 mA Output Voltage Line Regulation (VOUT/VOUT) /VIN -- 0.2 -- %/V Output Voltage Load Regulation VOUT/VOUT -- 0.2 1.5 % 20 mA < ILOAD < 300 mA Maximum Duty Cycle DCMAX 100 -- -- % VFB 0.4V -- High-Side Switch ON-Resistance ISW = 150 mA VFB = 0.7VFB_NOM 0.6 -- Low-Side Switch ON-Resistance ISW = -150 mA VFB = 1.1VFB_NOM 0.8 Oscillator Frequency fosc 1.8 2 2.2 MHz Output Voltage Noise VN -- 60 -- VRMS COUT = 2.2 F; CBYP = 0.1 F; 10 Hz to 100 KHz LOWQ = Low (Light Load Mode) -2.0 Output Voltage Accuracy Output Voltage Temp. Coefficient VOUT -3.0 +2.0 -- +3.0 Variation from nominal VOUT % Variation from nominal VOUT; -40C to +125C TCVOUT -- 40 -- ppm/C Line Regulation (VOUT/VOUT) /VIN -- 0.02 0.3 0.6 %/V VIN = VOUT + 1V to 5.5V; IOUT = 100 A Load Regulation VOUT/VOUT -- 0.2 1.5 % IOUT = 100 A to 50 mA -- dB f = up to 1 kHz; COUT = 2.2 F; CBYP = 0.1 F f = 20 kHz; COUT = 2.2 F; CBYP = 0.1 F 190 mA VOUT = 0V 50 Ripple Rejection PSRR -- ILIM_LOWQ 80 30 Current Limit 2017 Microchip Technology Inc. 120 DS20005839A-page 5 MIC2800 TABLE 1-3: ELECTRICAL CHARACTERISTICS - LDO 1 Electrical Characteristics: VIN = VOUTDC/DC; EN1 = VIN; EN2 = GND; COUT1 = 2.2 F, IOUT1 = 100 A; TJ = 25C, bold values indicate -40C TJ +125C; unless noted. Parameter Symbol Min. Typ. Max. Units Conditions LOWQ = High (Full Power Mode) -2.0 +2.0 -- Output Voltage Accuracy VOUT Output Current Capability IOUT 300 120 -- -- VOUT/VOUT -- 0.17 0.3 1.5 ILIM 350 500 700 Load Regulation Current Limit -3.0 +3.0 Variation from nominal VOUT % mA % PSRR VN -- 30 IOUT = 100 A to 150 mA IOUT = 100 A to 300 mA VOUT = 0V -- dB f = up to 1 kHz; COUT = 2.2 F; CBYP = 0.1 F f = 20 kHz; COUT = 2.2 F; CBYP = 0.1 F -- VRMS COUT = 2.2 F; CBYP = 0.1 F; 10 Hz to 100 KHz 44 Output Voltage Noise VIN 1.8V VIN 1.5V mA 70 Ripple Rejection Variation from nominal VOUT; -40C to +125C LOWQ = Low (Light Load Mode) -3.0 Output Voltage Accuracy Load Regulation Current Limit VOUT -4.0 +3.0 -- +4.0 Variation from nominal VOUT % Variation from nominal VOUT; -40C to +125C IOUT = 100 A to 10 mA VOUT/VOUT -- 0.2 0.5 1.0 % ILIM 50 85 125 mA VOUT = 0V dB f = up to 1 kHz; COUT = 2.2 F; CBYP = 0.1 F f = 20 kHz; COUT = 2.2 F; CBYP = 0.1 F 70 Ripple Rejection PSRR -- -- 42 DS20005839A-page 6 2017 Microchip Technology Inc. MIC2800 TABLE 1-4: ELECTRICAL CHARACTERISTICS - LDO2 Electrical Characteristics: VIN = VOUTLDO2 + 1.0V; EN1 = GND; EN2 = VIN; COUT2 = 2.2 F; IOUTLDO2 = 100 A; TJ = 25C, bold values indicate-40C TJ +125C; unless noted. Parameter Symbol Min. Typ. Max. Units Conditions LOWQ = High (Full Power Mode) -2.0 Output Voltage Accuracy VOUT -3.0 +2.0 -- Line Regulation (VOUT/VOUT) /VIN -- 0.02 Load Regulation VOUT/VOUT -- 0.20 0.25 0.40 Dropout Voltage VDO -- 70 94 142 +3.0 0.3 0.6 Variation from nominal VOUT % %/V VIN = VOUT +1V to 5.5V; IOUT = 100 A % IOUT = 100 A to 150 mA IOUT = 100 A to 200 mA IOUT = 100 A to 300 mA mV IOUT = 150 mA; VOUTLDO2 >= 2.7V IOUT = 200 mA; VOUTLDO2 >= 2.7V IOUT = 300 mA; VOUTLDO2 >= 2.7V 1.5 300 75 Ripple Rejection PSRR -- Variation from nominal VOUT; -40C to +125C -- dB 40 Current Limit ILIM 400 550 850 mA Output Voltage Noise VN -- 25 -- VRMS f = up to 1 kHz; COUT = 2.2 F; CBYP = 0.1 F f = 20 kHz; COUT = 2.2 F; CBYP = 0.1 F VOUT = 0V COUT = 2.2 F; CBYP = 0.1 F; 10 Hz to 100 KHz LOWQ = Low (Light Load Mode) -3.0 Output Voltage Accuracy VOUT -4.0 +3.0 -- +4.0 Variation from nominal VOUT % Variation from nominal VOUT; -40C to +125C Line Regulation (VOUT/VOUT) /VIN -- 0.02 0.3 0.6 %/V VIN = VOUT +1V to 5.5V Load Regulation VOUT/VOUT -- 0.2 1.0 % IOUT = 100 A to 10 mA 22 35 50 mV IOUT = 10 mA; VOUTLDO2 >= 2.7V -- dB f = up to 1 kHz; COUT = 2.2 F; CBYP = 0.1 F f = 20 kHz; COUT = 2.2 F; CBYP = 0.1 F 125 mA VIN = 2.7V; VOUT = 0V Dropout Voltage VDO -- 75 Ripple Rejection PSRR -- ILIM 50 55 Current Limit 2017 Microchip Technology Inc. 85 DS20005839A-page 7 MIC2800 TABLE 1-5: TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Storage Temperature Range TS -65 -- +150 C Lead Temperature -- -- -- +260 C Junction Temperature TJ -40 -- +125 C JA -- 45 -- C/W Soldering, 10 sec. Package Thermal Resistance 16-Ld QFN Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125C rating. Sustained junction temperatures above +125C can impact the device reliability. DS20005839A-page 8 2017 Microchip Technology Inc. MIC2800 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 100% 95% 90% 85% 80% 75% 70% 65% 60% 55% 50% 4.2V 3.6V 3V L=2.2 H COUT=2.2 F /LowQ=VIN 0 100 200 300 400 Output Current (mA) Efficiency (%) FIGURE 2-1: 500 4.2V 3.6V 3V L=2.2 H COUT=2.2 F /LowQ=VIN 0 200 400 Output Current (mA) ON OFF /LowQ=VIN COUT=2.2 F 2.7 600 DC/DC 1.87VOUT Efficiency. 100% 95% 90% 85% 80% 75% 70% 65% 60% 55% 50% 1000 950 900 850 800 750 700 650 600 550 500 Enabel Threshold (mV) Efficiency (%) Note: 3.4 4.1 4.8 Supply Voltage (V) 5.5 FIGURE 2-4: DC/DC Enable Threshold vs. Supply Voltage. Turn-On Delay (Sec) 2.0 600 100.0 95.0 90.0 85.0 80.0 75.0 70.0 65.0 60.0 55.0 50.0 COUT=2.2 F /LowQ=VIN 2.7 3.2 3.7 4.2 Supply Voltage (V) 4.7 5.2 DC/DC 1.8VOUT Efficiency. FIGURE 2-2: FIGURE 2-5: Supply Voltage. DC/DC Turn-on Delay vs. 1400 1000 -60 800 -50 3.6V 600 4.2V -40 400 EN1=EN2=VIN /LowQ=VIN COUT=2.2 F CBYP=0.01 F 200 0 -40 -20 0 20 40 60 Temperature (C) 80 100 120 -30 dB Current Limit (mA) 1200 -20 IOUT=50 mA VOUT=1.8V COUT=2.2 F -10 0 10 FIGURE 2-3: Temperature. DC/DC Current Limit vs. 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) FIGURE 2-6: DC/DC LowQ Mode Power Supply Rejection Ratio vs. Input Voltage. 2017 Microchip Technology Inc. DS20005839A-page 9 MIC2800 -80 Noise V/Hz dB -60 -50 -40 -30 -20 -10 10 0 A 100 A 50 mA -70 VIN=3.6V VOUT=1.8V 0.1 VIN=4.2V COUT=2.2 F VOUT=1.87V 0.01 0.001 0 10 100 10 1,000 10,000 100,000 1,000,000 Frequency (Hz) FIGURE 2-7: DC/DC LowQ Mode Power Supply Rejection Ratio vs. Output Current. 1,000 100,000 Frequency (Hz) -80 100 A -70 200 50 mA -60 150 dB -50 100 -40 -30 VOUT=1.8V COUT=2.2 F 50 VIN=4.2V VOUT=1.2V COUT=2.2 F CBYP=0.1F -20 -10 0 2.7 3.7 0 4.7 10 100 Supply Voltage (V) FIGURE 2-8: DC/DC LowQ Mode LDO Current Limit vs. Supply Voltage. 1,000 10,000 100,000 1,000,000 Frequency (Hz) FIGURE 2-11: Power Supply Rejection Ratio (LDO1 LowQ Mode). 1.90 -80 1.89 -70 1.88 -60 100 A 50 mA 150 mA -50 1.87 1.86 VIN=3.6V VOUT=1.87V COUT=2.2 F /LowQ=GND 1.85 1.84 0 10 20 30 40 50 60 70 80 90 100 Output Current (mA) FIGURE 2-9: DC/DC LowQ Mode LDO Output Voltage vs. Output Current. DS20005839A-page 10 dB Output Votage (V) 10,000,000 FIGURE 2-10: DC/DC LowQ Mode LDO Output Noise Spectral Density. 250 Current Limit (mA) 1 -40 -30 VIN=4.2V VOUT=1.2V COUT=2.2 F CBYP=0.1 F /LowQ=VIN -20 -10 0 10 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) FIGURE 2-12: Power Supply Rejection Ratio (LDO1 Normal Mode). 2017 Microchip Technology Inc. -90 -80 -70 -60 -50 -40 -30 -20 -10 0 FIGURE 2-13: Power Supply Rejection Ratio (LDO2 LowQ Mode). -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 dB 100 A 50 mA 150 mA 300 mA VIN=3.6V VOUT=2.8V COUT=2.2 F CBYP=0.01 F /LowQ=VIN 10 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) FIGURE 2-14: Power Supply Rejection Ratio (LDO2 Normal Mode). 3.00 2.95 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 60 55 VOUT=2.8V VIN=Vout+1V EN1=GND EN2=VIN COUT=2.2 F CBYP=0.01 F /LowQ=VIN 50 45 40 35 30 1,000 10,000 100,000 1,000,000 Frequency (Hz) -40 -20 0 FIGURE 2-16: Temperature. 20 40 60 Temperature (C) 80 100 120 Ground Current vs. 70 60 Ground Current (A) 100 10 A 100 mA 300 mA 65 Ground Current (A) VIN=4.2V VOUT=2.8V COUT=2.2 F CBYP=0.01 F /LowQ=GND 10 Output Voltage (V) 70 100 A 10 mA 50 mA 50 40 30 VOUT=2.8V VIN=VOUT+1V COUT=2.2 F CBYP=0.01 F 20 10 0 0 50 100 150 200 Output Current (mA) FIGURE 2-17: Current. 250 300 Ground Current vs. Output 140 120 VOUT=2.8V VIN=VOUT+1V EN1=GND EN2=VIN COUT=2.2 F CBYP=0.01 F -40 -20 FIGURE 2-15: Temperature. 0 20 40 60 Temperature (C) 80 100 120 LDO2 Output Voltage vs. 2017 Microchip Technology Inc. Dropout Voltage (mV) dB MIC2800 100 80 60 40 VOUT = 2.8V /LowQ=VIN COUT= 2.2 F CBYP= 0.01 F 20 0 0 FIGURE 2-18: Output Current. 50 100 150 200 Output current (mA) 250 300 LDO2 Dropout Voltage vs. DS20005839A-page 11 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 100 VOUT=2.8V VIN=VOUT+1V COUT=2.2 F CBYP=0.01 F LOWQ=VIN -40 300 mA 150 mA 100 mA 50 mA 20 mA -20 0 20 40 60 Temperature (C) 80 100 10 Noise V/Hz Dropout Voltage (V) MIC2800 1 VIN=4.2V VOUT=2.8V COUT=2.2 F CBYP=0.01 F LOWQ=VIN 0.1 0.01 0.001 120 10 1,000 100,000 10,000,000 Frequency (Hz) LDO 2 Dropout Voltage vs. 3 2.5 2 1.5 1 COUT=2.2 F CBYP=0.01 F /LOWQ=VIN 0.5 0 0 1 100 mA 150 mA 300 mA 2 3 4 Supply Voltage (V) 5 LDO2 Output Noise Spectral 400 mA 10 mA VOUT=1.8V VIN=VOUT+1V /LowQ=VIN COUT=2.2 F CBYP=0.01F Output Voltage AC Coupled (100 mV/div) Output Voltage (V) FIGURE 2-22: Density. Output Current (200 mA/div) FIGURE 2-19: Temperature. 6 Time (20s/div) FIGURE 2-20: Dropout Characteristics. FIGURE 2-23: PWM Mode. DC/DC Load Transient Input Voltage (1 V/div) 1 0.1 0.01 0.001 VIN=4.2V COUT=2.2 F CBYP=0.1 F VOUT=1.2V /LowQ=VIN 10 1,000 100,000 Frequency (Hz) FIGURE 2-21: Density. DS20005839A-page 12 10,000,000 VOUT=1.87V VIN=VOUT+1V IOUT=100 mA COUT=2.2 F CBYP=0.01 F /LowQ=VIN Output Voltage AC Coupled (100 mV/div) Noise V/Hz 10 LDO1 Output Noise Spectral Time (20 s/div) FIGURE 2-24: Mode. DC/DC Line Transient PWM 2017 Microchip Technology Inc. VOUT (500 mV/div) VOUT=1.8V VIN=3.6V IOUT=300 mA COUT=2.2 F CBYP=0.01 F /LowQ=VIN Vout (500 mV/div) Enable Voltage (500 mV/div) Supply Voltage & Enable Voltage (2 V/div) MIC2800 VOUT=1.8V VIN=EN1=3.8V IOUT=100 A COUT=2.2 F CBYP=0.01 F /LowQ=GND Time (40 s/div) Time (20 s/div) Enable Transient PWM Enable Transient LowQ 300 mA 100 uA Output Current (100 mV/div) Output Voltage AC Coupled (20 mV/div) Output Current (20 mA/div) 50 mA VOUT=1.8V VIN=VOUT+1V /LowQ=GND COUT=2.2 F CBYP=0.01 F FIGURE 2-28: Mode. Output Voltage AC Coupled (100 mV/div) FIGURE 2-25: Mode. VOUT=2.8V VIN=3.6V COUT=2.2 F CBYP=0.01 F /LowQ=VIN 100 uA Time (4 s/div) Time (10 s/div) FIGURE 2-29: Normal Mode. VOUT=2.8V VIN=VOUT+1V COUT=2.2 F CBYP=0.01 F /LowQ=GND Output Current (25 mA/div) Output Voltage AC Coupled (50 mV/div) VOUT=1.87V VIN=VOUT+1V IOUT=10 mA COUT=2.2 F CBYP=0.01 F /LowQ=GND 50 mA 100 uA Time (20 s/div) FIGURE 2-27: Mode. LDO2 Load Transient Output Voltage AC Coupled (50m V/div) DC/DC Load Transient Input Voltage (1 V/div) FIGURE 2-26: LowQ Mode. DC/DC Line Transient LowQ 2017 Microchip Technology Inc. Time (200 s/div) FIGURE 2-30: Mode. LDO Load Transient LowQ DS20005839A-page 13 Input Voltage (1 V/div) MIC2800 5.5 V Output Voltage AC Coupled (50 mV/div) LowQ Voltage (1 V/div) VOUT=1.87V IOUT=100 mA COUT=2.2 F CBYP=0.01 F /LowQ=VIN Output Voltage AC Coupled (50 mV/div) 4V VIN=3.3V VOUT=1.8V CBYP=0.01 f COUT=2.2 F+100 nF+10 F IOUT = 50 mA Time (100 s/div) Time (20 s/div) FIGURE 2-34: Mode Transition. 5.5 V 4V VOUT=1.87V IOUT=10 mA COUT=2.2 F CBYP=0.01 F /LowQ=GND CBYP=0.01 F /LowQ=VIN L=2.2 H FIGURE 2-35: DC/DC PWM Waveform. VIN=3.3V VOUT=1.8V CBYP=0.01 f COUT=2.2 F+100 nF+10 F IOUT = 50 mA Output Voltage AC Coupled (50 mV/div) LowQ Voltage (1 V/div) LDO2 Line Transient LowQ VOUT=1.8V VIN=4V COUT=2.2 F Time (400 s/div) Time (40 s/div) FIGURE 2-32: Mode. DC/DC PWM Mode to LowQ Output Voltage AC Couple (10 mV/div) LowQ Voltage (2 V/div) LDO2 Line Transient Normal VOUT AC Coupled (50 mV/div) Input Voltage (1 V/div) FIGURE 2-31: Mode. Time (100 s/div) FIGURE 2-33: Mode Transition. DS20005839A-page 14 DC/DC LowQ Mode to PWM FIGURE 2-36: POR Behavior, EN1 = High, Low-to-High Transition on EN2. 2017 Microchip Technology Inc. MIC2800 ESR (m) 100 10 STABLE AREA 1 0.1 0 FIGURE 2-37: POR Behavior, EN2 = High, Low-to-High Transition on EN1. FIGURE 2-40: 50 100 Output Current (mA) 150 ESR vs. Load - LDO1. ESR (m) 100 10 STABLE AREA 1 0.1 0 FIGURE 2-41: 50 100 Output Current (mA) 150 ESR vs. Load - LDO2. FIGURE 2-38: CSET Pin Voltage and POR Delay Time Behavior for Correct Sequencing. ESR (m) 100 10 STABLE AREA 1 0.1 0 FIGURE 2-39: 50 100 Output Current (mA) 150 ESR vs. Load - LDO. 2017 Microchip Technology Inc. DS20005839A-page 15 MIC2800 NOTES: DS20005839A-page 16 2017 Microchip Technology Inc. MIC2800 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number 16-Pin QFN Pin Name 1 LOWQ 2 BIAS Internal circuit bias supply. It must be decoupled to signal ground with a 0.1 F capacitor and should not be loaded. 3 SGND Signal ground 4 PGND Power ground 5 SW Switch (Output): Internal power MOSFET output switches. 3.1 Description LOWQ Mode. Active Low Input. Logic High = Full Power Mode; Logic Low = LOWQ Mode; Do not leave floating. 6 VIN Supply Input - DC/DC. Must be tied to PIN7 externally. 7 VIN Supply Input - LDO2. Must be tied to PIN6 externally. 8 LDO2 9 FB 10 LDO LDO Output: Connect to VOUT of the DC/DC for LOWQ mode operation. Output of LDO regulator 2. Feedback. Input to the error amplifier for DC/DC converter. For fixed output voltages connect directly to VOUT and an internal resistor network sets the output voltage. 11 LDO1 Output of LDO regulator 1. 12 POR Power-on Reset Output: Open-drain output. Active low indicates an output undervoltage condition on either one of the three regulated outputs. 13 CSET Delay Set Input: connect external capacitor to GND to set the internal delay for the POR output. When left open, there is a minimum delay. This pin cannot be grounded. 14 CBYP Reference Bypass: connect external 0.1 F to GND to reduce output noise. May be left open. 15 EN1 Enable Input (DC/DC and LDO1). Active High Input. Logic high = On; Logic low = Off; do not leave floating. 16 EN2 Enable Input (LDO 2). Active High Input. Logic high = On; Logic low = Off; do not leave floating. LOWQ The LOWQ pin provides a logic level control between the internal PWM mode and the low noise linear regulator mode. With LOWQ pulled low (<0.2V), quiescent current of the device is greatly reduced by switching to a low noise linear regulator mode that has a typical IQ of 20 A (LDO2 ON only). In LowQ mode the LDO output can deliver 60 mA of current to the output. By placing LOWQ high (>1V), the device transitions into a constant frequency PWM buck regulator mode. This allows the device the ability to efficiently deliver up to 600 mA of output current at the same output voltage, and to support load transients generated by processor activity. LOWQ mode also limits the output load of both LDO1 and LDO2 to 10 mA. 3.2 BIAS The BIAS pin supplies the power to the internal control and reference circuitry. The bias is powered from AVIN through an internal 6 resistor. A small 0.1 F ceramic capacitor is required for bypassing. 3.3 SGND Signal ground (SGND) is the ground path for the biasing and control circuitry. The current loop for the signal ground should be as small as possible. 3.4 PGND Power ground (PGND) is the ground path for the high current PWM mode. The current loop for the power ground should be as small as possible. The ESD protection of the LOWQ pin is free from clamping diodes to the input supply rails, therefore the LOWQ signal can be driven by host I/Os under backup power domains without the risk of parasitic leakage, even if the main power to the MIC2800 is removed. 2017 Microchip Technology Inc. DS20005839A-page 17 MIC2800 3.5 SW The switch (SW) pin is the common connection between the internal power MOSFETs and connects directly to the inductor. Due to the high-speed switching on this pin, the switch node should be routed away from sensitive nodes. 3.6 VIN Two input voltage pins provide power to the switch mode DC/DC and LDO2 separately. The LDO1 input voltage is provided by the DC/DC LDO pin. VIN provides power to the LDO section and the bias through an internal 6 resistor. Both VIN pins must be tied together. For the switch mode DC/DC regulator, VIN provides power to the MOSFET along with current limiting sensing. Due to the high switching speeds, a 4.7 F minimum ceramic capacitor is recommended close to VIN and the power ground (PGND) pin for bypassing. 3.7 FB Connect the feedback pin to VOUT for fixed output voltage versions. For adjustable output version, an external resistor divider is used to program the output voltage. 3.9 LDO The LDO pin is the output of the LOWQ mode linear regulator and should be connected to the output of the DC/DC converter. In LOWQ mode (LOWQ < 0.2V), the LDO supplies the output current and supports the output voltage in place of the DC/DC stage. In PWM mode (LOWQ > 1V) the LDO pin provides power to LDO1. 3.10 LDO1 Regulated output voltage of LDO1. Input power is provided by the DC/DC switching regulator. The minimum recommended output capacitance is 2.2 F ceramic. 3.11 In steady-state conditions, the POR output is high if at least one channel (LDO2 and DC-DC, LDO1) is enabled and has reached regulation. This is equivalent to performing a logic OR operation on the status of the output voltages. If any of the outputs is subsequently pulled out of regulation (e.g., due to a momentary overload), the POR signal goes low and it remains low as long as the affected output is out of regulation. If the affected output returns in regulation, POR is asserted high after the delay time programmed with the capacitor at the CSET pin. The ESD protection of the POR pin is free from clamping diodes to the input supply rails. Therefore, the POR signal can be asserted to host I/Os under backup power domains or pulled up to backup power sources without the risk of parasitic leakage, even if the main power to the MIC2800 is removed. LDO2 Regulated output voltage of LDO2. Power is provided by VIN. The minimum recommended output capacitance is 2.2 F ceramic. 3.8 programmable with a capacitor from the CSET pin to ground. The delay time can be programmed to be as long as 1 second. Power-on Reset (POR) The Power-on Reset (POR) output is an open-drain N-channel device, requiring a pull-up resistor to either the input voltage or output voltages for proper voltage levels. The POR output has a delay time that is DS20005839A-page 18 3.12 CSET The CSET pin is a current source output that charges a capacitor that sets the delay time for the Power-on Reset output from low-to-high. The delay for POR highto-low (detecting an undervoltage on any of the outputs) is always minimal. The current source of 1.25 A charges a capacitor up from 0V. When the capacitor reaches 1.25V, the output of the POR is allowed to go high. The delay time in microseconds is equal to the CSET capacitor value in picofarads. EQUATION 3-1: PORDelay s = C SET pF 3.13 CBYP The internal reference voltage can be bypassed with a capacitor to ground to reduce output noise and increase power supply rejection (PSRR). A quick-start feature allows for quick turn on of the output voltage. The recommended nominal bypass capacitor is 0.1 F, but it can be increased, which will also result in an increase to the start-up time. 3.14 EN1, EN2 Both enable inputs are active high, requiring 1.0V for guaranteed logic HIGH level detection (VIH=1.0V MIN). EN1 provides logic control of both the DC/DC regulator and LDO1. EN2 provides logic control for LDO2 only. The enable inputs are CMOS logic and cannot be left floating. 2017 Microchip Technology Inc. MIC2800 The enable pins provide logic level control of the specified outputs. When both enable pins are in the OFF state, supply current of the device is greatly reduced (typically < 1 A). When the DC/DC regulator is in the OFF state, the output drive is placed in a "tri-stated" condition, where both the high side P-channel MOSFET and the low-side N-channel are in an OFF or nonconducting state. Do not drive either of the enable pins above the supply voltage. 2017 Microchip Technology Inc. DS20005839A-page 19 MIC2800 4.0 APPLICATION INFORMATION The MIC2800 is a digital power management IC with a single integrated buck regulator and two low dropout regulators. LDO1 is a 300 mA low dropout regulator that uses power supplied by the onboard buck regulator. LDO2 is a 300 mA low dropout regulator using the supply from the input pin. The buck regulator is a 600 mA PWM power supply that utilizes a LOWQ light load mode to maximize battery efficiency in light load conditions. This is achieved with a LOWQ control pin that, when pulled low, shuts down all the biasing and drive current for the PWM regulator, drawing only 20 A of operating current. This allows the output to be regulated through the LDO output, capable of providing 60 mA of output current. This method has the advantage of producing a clean, low-current, ultra-low-noise output in LOWQ mode. During LOWQ mode, the SW node becomes high-impedance, blocking current flow. Other methods of reducing quiescent current, such as Pulse Frequency Modulation (PFM) or bursting techniques may create large-amplitude, low-frequency ripple voltages that can be detrimental to system operation. When more than 60 mA is required, the LOWQ pin can be forced high, causing the MIC2800 to enter in PWM mode. In this case, the LDO output makes a "hand-off" to the PWM regulator with virtually no variation in output voltage. The LDO output then turns off, allowing up to 600 mA of current to be efficiently supplied through the PWM output to the load. 4.1 Output Capacitor LDO1 and LDO2 outputs require at least a 2.2 F ceramic output capacitor for stability. The DC/DC switch mode regulator requires at least a 2.2 F ceramic output capacitor to be stable. All output capacitor values can be increased to improve transient response. X7R/X5R dielectric type ceramic capacitors are recommended because of their temperature performance. X7R-type capacitors change capacitance by 15% over their operating temperature range and are the most stable type of ceramic capacitors. Z5U and Y5V dielectric capacitors change value by as much as 50% to 60% respectively over their operating temperature ranges and are therefore not recommended. 4.2 Input Capacitor value of the input capacitor can be increased as needed to better suppress the input ripple generated by the DC/DC converter. 4.3 Inductor Selection The MIC2800 is designed for use with a 2.2 H inductor. Proper selection should ensure the inductor can handle the maximum average and peak currents required by the load. Maximum current ratings of the inductor are generally given in two methods; permissible DC current and saturation current. Permissible DC current can be rated either for a 40C temperature rise or a 10% to 20% loss in inductance. Ensure that the inductor selected can handle the maximum operating current. When saturation current is specified, make sure that there is enough margin that the peak current will not saturate the inductor. Peak inductor current can be calculated as follows: EQUATION 4-1: V OUT - V OUT 1 - --------------V IN I PK = I OUT + -----------------------------------------------2fL 4.4 POR Delay Time The POR signal also goes low for the duration of the delay time given by Eq. 3.1 when only one of the enable inputs (EN1, EN2) transitions from low to high, with the other being already high and the corresponding output being in regulation. This is shown in Fig. 2-36 and Fig. 2-37. At the low-to-high transition of either enable input, the CSET pin capacitor is discharged to ground, and the POR delay time is restarted. At start-up, in order to prevent a momentary high glitch of the POR signal between the first and the second enable, it is recommended to set the POR delay time longer than the maximum delay expected between the enable signals plus the turn-on time tTURN-ON. For a given delay between the enable signals, an example of correct POR delay time design is shown in Fig. 2-38. It can be seen that the CSET voltage is reset to ground by the latter low-to-high enable transition before it reaches the VTHCSET voltage (1.25V TYP). A minimum 1 F ceramic is recommended on the VIN pin for bypassing. X5R or X7R dielectrics are recommended for the input capacitor. Y5V dielectrics lose most of their capacitance over temperature and are therefore, not recommended. A minimum 1 F is recommended close to the VIN and PGND pins for high frequency filtering. Smaller-case-size capacitors are recommended due to their lower ESR and ESL. The DS20005839A-page 20 2017 Microchip Technology Inc. MIC2800 NOTES: 2017 Microchip Technology Inc. DS20005839A-page 21 MIC2800 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 16-lead QFN Example Part Number Code MIC2800-A4SYML-TR YA4S MIC2800-D24MYML-TR YD24M YG4J MIC2800-D2FMYML-TR YD2FM 256 MIC2800-G2SYML-TR YG2S MIC2800-G4JYML-TR YG4J MIC2800-G4KYML-TR YG4K MIC2800-G4MYML-TR YG4M MIC2800-G4SYML-TR YG4S MIC2800-G7SYML-TR YG7S MIC2800-G1JJYML-TR G1JJ MIC2800-G1JSYML-TR G1JS MIC2800-GFMYML-TR YGFM MIC2800-GFSYML-TR YGFS MIC2800-G4SYML-TR YG4S <MC>1729Y Refer to the Product Identification System section for information on the output voltage for each device. Legend: XX...X Y YY WW NNN e3 * Product code or customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. , , Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar () symbol may not be to scale. DS20005839A-page 22 2017 Microchip Technology Inc. MIC2800 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. 2017 Microchip Technology Inc. DS20005839A-page 23 MIC2800 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20005839A-page 24 2017 Microchip Technology Inc. MIC2800 NOTES: 2017 Microchip Technology Inc. DS20005839A-page 25 MIC2800 DS20005839A-page 26 2017 Microchip Technology Inc. MIC2800 APPENDIX A: REVISION HISTORY Revision A (October 2017) Original Release of this Document. 2017 Microchip Technology Inc. DS20005839A-page 27 MIC2800 NOTES: DS20005839A-page 28 2017 Microchip Technology Inc. MIC2800 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. - Device Device: X X XX - XX(1) Examples: a) MIC2800-A4SYML-TR: Output Temperature Package Tape and Reel Option Voltage MIC2800: Output Voltages: A4S = D24M= (DC/DC, LDO1, D2FM= LDO2) G2S = G4J = G4K = G4M = G4S = G7S = G1JJ= G1JS= G4S = Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs Adjustable/1.2V/3.3V 1.87V/1.2V/2.8V 1.87V/1.5V/2.8V 1.8V/1.05V/3.3V 1.8V/1.2V/2.5V 1.8V/1.2V/2.6V 1.8V/1.2V/2.8V 1.8V/1.2V/3.3V 1.8V/1.575V/3.3V 1.8V/1.25V/2.5V 1.8V/1.25V/3.3V 1.8V/1.2V/3.3V Temperature: Y = Pb-Free with Industrial Temperature Grade (-40C to +125C) Package: ML = 16-lead, 3x3 mm QFN, 0.85 mm thickness Tape and Reel: TR = Tape and Reel b) MIC2800-D24MYML-TR: c) MIC2800-D2FMYML-TR: d) MIC2800-G2SYML-TR: Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs, 1.8V/1.05V/3.3V Output Voltage, -40C to +125C 16LD QFN Package, Tape and Reel e) MIC2800-G4JYML-TR: Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs, 1.8V/1.2V/2.5V Output Voltage, -40C to +125C 16LD QFN Package, Tape and Reel Note 1: 2017 Microchip Technology Inc. Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs, Adjustable/1.2V/3.3V Output Voltage, -40C to +125C, 16LD QFN Package, Tape and Reel Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs, 1.87V/1.2V/2.8V Output Voltage, -40C to +125C 16LD QFN Package, Tape and Reel Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual 300 mA/300 mA Low VIN LDOs, 1.87V/1.5V/2.8V Output Voltage, -40C to +125C 16LD QFN Package, Tape and Reel Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. DS20005839A-page 29 MIC2800 NOTES: DS20005839A-page 30 2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. 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QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2210-5 == ISO/TS 16949 == 2017 Microchip Technology Inc. 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