Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 1 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
Product Features
• 60 – 2500 MHz
• +24 dBm P1dB
• +41 dBm Output IP3
• 19 dB Gain @ 900 MHz
• 14.5 dB Gain @ 1900 MHz
• +5V Single Positive Supply
• Lead-free / Green / RoHS-
compliant SOT-89 Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastru cture
• DBS / WLL / WLAN / WiBro
• Defense / Homeland Security
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in a lead-free/green/RoHS-compliant SOT-89
SMT package. All devices are 100% RF and DC tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH114 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN GND RF OUT
GND
1 23
4
Function Pin No.
Input / Base 1
Output / Collector 3
Ground 2, 4
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 60 2500
Test Frequency MHz 1900
Gain dB 13.5 14.5
Input Return Loss dB 10
Output Return Loss dB 14
Output P1dB dBm +23
Output IP3 (2) dBm +39.5 +41
IS-95A Channel Power
@ -45 dBc ACPR dBm +17
Noise Figure dB 5.0
Test Frequency MHz 2140
Gain dB 14
Output P1dB dBm +23
Output IP3 (2) dBm +40
Operating Current Range mA 130 150 170
Device Voltage V +5
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +15 dBm
Device Voltage +6 V
Device Current 220 mA
Junction Temperature +220 °C
Thermal Resistance, Rth 149 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 900 1900 2140
S21 - Gain dB 19 14.5 14
S11 - Input R.L. dB -14 -10 -25
S22 - Output R.L. dB -10 -14 -20
Output P1dB dBm +24 +23 +23
Output IP3 dBm +40 +41 +40
Noise Figure dB 5.0 5.0 6.0
Supply Bias +5 V @ 150 mA
Ordering Information
Part No. Description
AH114-89G ¼ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH114-89PCB900 900 MHz Evaluation Board
AH114-89PCB1900 1900 MHz Evaluation Board
AH114-89PCB2140 2140 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 2 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 °C, unmatched 50 ohm system)
00.5 11.5 22.5 3
Fr equency (GHz)
Gain / Maximum Stable Gain
0
5
10
15
20
25
30
Gain (dB)
DB(|S[2,1]|) * DB (GMax) *
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
3.075GHz
Swp Min
0.05GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
3.075GHz
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 °C, unmatched 50 ohm system, calibr a ted to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -3.61 -169.14 23.08 149.67 -30.46 17.14 -7.74 -128.38
100 -3.31 -173.35 21.93 148.90 -29.57 14.05 -7.80 -143.29
200 -2.62 179.12 19.02 146.43 -27.97 9.40 -6.40 -169.43
400 -2.62 173.23 17.74 136.11 -27.96 10.86 -6.33 -179.95
600 -2.54 168.30 16.69 123.77 -27.96 10.86 -6.09 173.78
800 -2.39 163.31 15.62 111.53 -27.96 10.62 -5.86 168.37
1000 -2.27 158.06 14.57 101.13 -26.02 9.88 -5.68 163.12
1200 -2.21 152.89 13.55 91.40 -26.02 8.87 -5.58 157.73
1400 -2.16 147.55 12.54 82.69 -26.02 7.57 -5.37 152.46
1600 -2.05 142.54 11.65 74.35 -26.02 5.95 -5.20 147.09
1800 -1.99 137.85 10.70 66.99 -25.08 4.22 -5.20 141.71
2000 -1.84 133.47 9.91 59.96 -24.44 2.37 -5.05 136.43
2200 -1.68 129.41 9.13 53.84 -24.44 0.24 -5.01 131.29
2400 -1.46 125.20 8.46 47.68 -24.44 -2.39 -4.89 126.16
2600 -1.33 120.48 7.85 41.30 -23.27 -5.53 -4.88 121.19
2800 -1.20 115.03 7.22 34.74 -23.10 -9.13 -4.73 116.28
3000 -1.17 109.05 6.62 27.78 -23.10 -12.86 -4.66 111.40
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 3 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH114-89PCB900)
Typical RF Performance
Frequency 900 MHz
S21 – Gain 19 dB
S11 – Input Return Loss -14 dB
S22 – Output Return Loss -10 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing) +40 dBm
Output P1dB +24 dBm
Noise Figure 5.0 dB
Supply Voltage +5 V
Supply Current 150 mA
Measur e d param et er s wer e tak en at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
RES
ID=R1
R=2700 Ohm
CAP
ID=C6
C=5.6 pF
CAP
ID=C9
C=1.0 pF
DIODE1
ID=D1
RES
ID=L2
R=0 Ohm
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
ID=C3
C=100000 pF
IND
ID=L1
L=33 nH
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
C6 should be plac ed at the silk s creen
marker "F" on the W J evaluation board.
A
ll passive components are of size 0603 unless otherw ise noted.
C9 should be placed at the silk screen
marker "8" on t he WJ ev aluation board.
size 1206
size 0805
The capacitor should be placed
19° @ 0.9GHz from pin 3.
The capacitor should be placed
14° @ 0.9GHz from pin 1.
0.7 0.8 0.9 11.1
Frequency (GHz)
Application Circuit: 900 MHz
-20
-15
-10
-5
0
5
10
15
20
Magnitude (dB)
DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) *
ACPR IS-95A vs. Channel Power
IS-95, 9 Ch. Forward, 30 kHz Meas B W , ±885 kHz offset
-70
-60
-50
-40
13 14 15 16 17 18
Output Channel Power (dBm)
ACPR (dBc)
freq = 0.9 GHz
1900 MHz Application Circuit (AH114-89PCB1900)
Typical RF Performance
Frequency 1900 MHz
S21 – Gain 14.5 dB
S11 – Input Return Loss -10 dB
S22 – Output Return Loss -14 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing) +41 dBm
Output P1dB +23 dBm
Noise Figure 5.0 dB
Supply Voltage +5 V
Supply Current 150 mA
Measur e d param et er s wer e tak en at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
IND
ID=L1
L=15 nH
RES
ID=R1
R=2700 Ohm
IND
ID=L2
L=2.7 nH
CAP
ID=C7
C=2.4 pF CAP
ID=C9
C=1.2 pF
DIODE1
ID=D1 CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
ID=C3
C=100000 pF
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
marker "A " on t he WJ evaluation board.
C7 should be placed at the silk screen
A
ll passive components are of size 0603 unless otherwise noted.
5° @ 1.9GHz from pin 1.
The capacit o r s hould be placed 34° @ 1.9GHz from pin 3.
The capacitor should be placed
marker "7" on t he WJ evaluation board.
C9 should be place d at the s ilk screen
size 1206
size 0805
1.6 1.7 1.8 1.9 22.1
Frequency (GHz)
Application Circuit: 1900 MHz
-20
-15
-10
-5
0
5
10
15
20
Magnitude (dB)
DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) *
ACPR IS-95A vs. Channel Power
IS-95, 9 Ch. Forward, 30 kHz Meas B W, ±885 kH z o ffset
-70
-60
-50
-40
13 14 15 16 17 18
Output Channel Power (dBm)
ACPR (dBc)
freq = 1.9 GHz
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 4 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH114-89PCB2140)
Typical RF Performance
Frequency 2140 MHz
S21 – Gain 14 dB
S11 – Input Return Loss -25 dB
S22 – Output Return Loss -20 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing) +40 dBm
Output P1dB +23 dBm
Noise Figure 6.0 dB
Supply Voltage +5 V
Supply Current 150 mA
Measur e d param et er s wer e tak en at 25 °C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
IND
ID=L1
L=15 nH
RES
ID=R1
R=2700 Ohm
CAP
ID=C6
C=1.5 pF
CAP
ID=C9
C=0.8 pF
DIODE1
ID=D1
CAP
ID=L2
C=1.5 pF
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
ID=C3
C=100000 pF
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
A
ll passive components are of size 0603 unless otherwise noted. size 1206
size 0805
39° @ 2.14GHz from pin 3.
The capacitor should be placed
screen marker "6" on the WJ evaluation board.
C9 should be placed at the sil k
33° @ 2.14GHz from pin 1.
The capacit or should be placed
screen marker "F" on t he WJ evaluation boa rd.
C6 should be plac ed at t h e silk
from pin 1 of the AH114.
L2 should be placed 19.5° @ 2.14GHz
1.9 22.1 2.2 2.3
Frequency (GHz)
Application Circuit: 2140 MHz
-25
-20
-15
-10
-5
0
5
10
15
Magnitude (dB)
DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) *
W-CDMA ACLR vs. Channel Power
3GPP W-CDMA, Te s t Mode l 1 + 64 DPCH, ±5 MH z offset
-60
-55
-50
-45
-40
-35
12 13 14 15 16
Output Channel Power (dBm)
ACLR (dBc)
freq = 2140 MHz
70 MHz Reference Design
Typical RF Performance
Frequency 70 MHz
S21 – Gain 23.4 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -14 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing) +44.5 dBm
Output P1dB +23.8 dBm
Noise Figure 6.5 dB
Supply Voltage +5 V
Supply Current 150 mA
Measur e d param et er s wer e tak en at 25 °C.
CAP
C=1000 pF
CAP
C=1e7 pF
CAP
C=10 pF
CAP
C=1000 pF
CAP
C=1000 pF
IND
L=470 nH
RES
R=2700 Ohm
CAP
C=68 pF
IND
L=56 nH IND
L=33 nH
RES
R=3.9 Ohm
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
40 50 60 70 80 90 100
Frequency (MHz)
Measured Gain
20
22
24
26
Gain (dB)
DB(|S[2,1]|)
40 50 60 70 80 90 100
Frequency (MH z)
Measure d Return Loss
-25
-20
-15
-10
-5
0
Return Loss (d B)
DB(|S[1,1]|) DB(|S[2,2]|)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 5 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
110 MHz Reference Design
Typical RF Performance
Frequency 110 MHz
S21 – Gain 21.9 dB
S11 – Input Return Loss -16 dB
S22 – Output Return Loss -12 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing) +44 dBm
Output P1dB +23.8 dBm
Noise Figure 6.6 dB
Supply Voltage +5 V
Supply Current 150 mA
Measur e d param et er s wer e tak en at 25 °C.
CAP
C=1000 pF
CAP
C=1e7 pF
CAP
C=10 pF
CAP
C=1000 pF
CAP
C=1000 pF
IND
L=470 nH
RES
R=2700 Ohm
CAP
C=47 pF
IND
L=33 nH IND
L=18 nH
RES
R=3.9 Ohm
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
80 90 100 110 120 130 140
Freq uency (MH z)
Measured Gain
18
20
22
24
Gain (dB)
DB(|S[2,1]|)
80 90 100 110 120 130 140
Freq uency (MH z)
Measured Return Loss
-25
-20
-15
-10
-5
0
Return Loss (dB)
DB(|S[1,1]|) DB(|S[2,2]|)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 6 of 6 January 2008
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
AH114-89G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an “AH1 14
G” designator with an alphanumeric lot code on
the top surface of the package. The obsolete tin-
lead package is marked with an “AH114” or
“E009” designator followed by an alphan umeric
lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1A
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
XXXX-X
AH114G
