2N5294
2N5296
2N5298
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5294, 2N5296,
and 2N5298 types are NPN silicon transistors
manufactured by the epitaxial base process, and
designed for applications that require power amplifier
and medium speed switching capabilities.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5294 2N5296 2N5298 UNITS
Collector-Base Voltage VCBO 80 60 80 V
Collector-Emitter Voltage VCEV 80 60 80 V
Collector-Emitter Voltage (RBE=100Ω) VCER 75 50 70 V
Collector-Emitter Voltage VCEO 70 40 60 V
Continuous Collector Current IC 4.0 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 36 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 70 °C/W
Thermal Resistance ΘJC 3.47 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5294 2N5296 2N5298
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEV V
CE=35V, VEB=1.5V - - - 2.0 - - mA
ICEV V
CE=35V, VEB=1.5V, TC=150°C - - - 5.0 - - mA
ICEV V
CE=65V, VEB=1.5V - 0.5 - - - 0.5 mA
ICEV V
CE=65V, VEB=1.5V, TC=150°C - 3.0 - - - 3.0 mA
ICER V
CE=50V, RBE=100Ω - 0.5 - - - 0.5 mA
ICER V
CE=50V, RBE=100Ω, TC=150°C - 2.0 - - - 2.0 mA
IEBO V
EB=7.0V - 1.0 - - - - mA
IEBO V
EB=5.0V - - - 1.0 - 1.0 mA
BVCEV VBE=1.5V, IC=100mA 80 - 60 - 80 - V
BVCER IC=100mA, RBE=100Ω 75 - 50 - 70 - V
BVCEO IC=100mA 70 - 40 - 60 - V
VCE(SAT) IC=500mA, IB=50mA - 1.0 - - - - V
VCE(SAT) IC=1.0A, IB=100mA - - - 1.0 - - V
VCE(SAT) IC=1.5A, IB=150mA - - - - - 1.0 V
VBE(ON) VCE=4.0V, IC=500mA - 1.1 - - - - V
VBE(ON) VCE=4.0V, IC=1.0A - - - 1.3 - - V
VBE(ON) VCE=4.0V, IC=1.5A - - - - - 1.5 V
TO-220 CASE
R1 (26-September 2012)
www.centralsemi.com
2N5294
2N5296
2N5298
NPN SILICON TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5294 2N5296 2N5298
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
hFE VCE=4.0V, IC=500mA 30 120 - - - -
hFE VCE=4.0V, IC=1.0A - - 30 120 - -
hFE VCE=4.0V, IC=1.5A - - - - 20 80
fT VCE=4.0V, IC=200mA 0.8 - 0.8 - 0.8 - MHz
ton VCC=30V, IC=500mA, IB=50mA - 5.0 - - - - μs
ton VCC=30V, IC=1.0A, IB=100mA - - - 5.0 - - μs
ton VCC=30V, IC=1.5A, IB=150mA - - - - - 5.0 μs
toff VCC=30V, IC=500mA, IB=50mA - 15 - - - - μs
toff VCC=30V, IC=1.0A, IB=100mA - - - 15 - - μs
toff VCC=30V, IC=1.5A, IB=150mA - - - - - 15 μs
R2
www.centralsemi.com
R1 (26-September 2012)
