US6M2
Transistors
Rev.A 1/3
2.5V Drive
Nch+Pch
MOSFET
US6M2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low volt age drive (2.5V drive).
4) Built-in G-S Protection Diode .
zApplications
Switching
zPackaging specifications zInner circuit
Package
Code Taping
Basic ordering unit (pieces)
US6M2
TR
3000
Type
zA bsolute maximum ratings (Ta=25°C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
°C
Tch 150
°C
Tstg −55 to +150
Tr1 : Nchannel Tr2 : Pchannel
Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode) Pulsed
∗1
V30 V
A
A
A
A
W / TOTAL
∗2
∗1
12
±1.5
±6
0.6
61.0
W / ELEMENT
0.7
−20
−12
±1
±4
−0.4
−4
zThermal resistance
Parameter
°C/W / TOTAL
Rth(ch-a)
Symbol Limits Unit
Channel to ambient 125
°C/W / ELEMENT179
∗ Mounted on a ceramic board
∗
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2∗2
∗1
∗1
(1)
(6)
(3)
(4)
(2)
(5)
TUMT6
Abbreviated symbol : M02
0.2Max.
US6M2
Transistors
Rev.A 2/3
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
IGSS
Yfs
Min.
−
Typ. Max. Unit Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−10 µAV
GS=12V, VDS=0V
VDD 15V, VGS= 4.5V
30 −−VI
D= 1mA, VGS=0V
−−1µAV
DS= 30V, VGS=0V
0.5 −1.5 V VDS= 10V, ID= 1mA
−170 240 ID= 1.5A, VGS= 4.5V
−180 250 mΩ
mΩ
mΩ
ID= 1.5A, VGS= 4V
−240 340 ID= 1.5A, VGS= 2.5V
1.5 −−SV
DS= 10V, ID= 1.5A
−80 −pF VDS= 10V
−13
12 −pF VGS=0V
−7−pF f=1MHz
−9−ns
−15 −ns
−6−ns
−1.6 −ns
−0.5 2.2 nC
−0.3 −nC ID= 1.5A
−−nC RL= 10Ω, RG= 10Ω
VDD 15V
I
D
= 0.75A
V
GS
= 4.5V
R
L
= 20Ω
R
G
=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.2 V I
S
= 0.6A, V
GS
=0VForward voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
US6M2
Transistors
Rev.A 3/3
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
IGSS
Yfs
Min.
−
Typ. Max. Unit Conditions
V(BR) DSS
IDSS
VGS (th)
RDS (on)
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−10 µAV
GS= −12V, VDS=0V
VDD −15V, VGS= −4.5V
−20 −−VI
D= −1mA, VGS=0V
−−−1µAV
DS= −20V, VGS=0V
−0.7 −−2.0 V VDS= −10V, ID= −1mA
−280 390 ID= −1A, VGS= −4.5V
−310 430 mΩ
mΩ
mΩ
ID= −1A, VGS= −4V
−570 800 ID= −0.5A, VGS= −2.5V
0.7 −−SV
DS= −10V, ID= −0.5A
−150 −pF VDS= −10V
−20
20 −pF VGS= 0V
−9−pF f=1MHz
−8−ns
−25 −ns
−10 −ns
−2.1 −ns
−0.5 −nC
−0.5 −nC ID= −1A
−−nC RL= 15Ω, RG= 10Ω
VDD −15V
I
D
= −0.5A
V
GS
= −4.5V
R
L
= 30Ω
R
G
= 10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−−1.2 V I
S
= −0.4A, V
GS
=0VForward voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
