PSKD 172 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 3 Test Conditions TVJ = TVJM TC = 100C; 180 sine IFSM TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine VISOL 50/60 Hz, RMS IISOL 1 mA Md Weight Mounting torque (M6) Terminal connection torque (M6) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM t = 1 min t=1s 218 221 157 160 A A A A 000 000 000 000 A 2s A 2s A 2s A 2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ Characteristic Values 20 mA VF IF = 300 A; TVJ = 25C For power-loss calculations only TVJ = TVJM QS IRM TVJ = 125C; IF = 300 A, -di/dt = 50 A/s RthJC per per per per diode; DC current module diode; DC current module 6600 7290 5600 6200 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 120 g VT0 rT dS dA a 1 2 Maximum Ratings 300 A 190 A TVJ TVJM Tstg RthJK 1 2 3 PSKD 172/08 PSKD 172/12 PSKD 172/14 PSKD 172/16 PSKD 172/18 Symbol IFRMS IFAVM i2dt = 2x 300 A = 2x 190 A = 800-1800 V other values see Fig. 6/7 1.15 V 0.8 0.8 V m 550 235 C A 0.21 0.105 0.31 0.155 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 Creepage distance on surface Strike distance through air Maximum allowable acceleration Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B2 2 x PSKD 172 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKD 172 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.210 0.223 0.233 0.260 0.295 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.001 0.065 0.4 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.31 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.1 0.001 0.065 0.4 1.29 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/