VS-4ESH01-M3
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Revision: 06-Jul-17 1Document Number: 94998
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Hyperfast Rectifier, 4 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
PRIMARY CHARACTERISTICS
IF(AV) 4 A
VR100 V
VF at IF0.73 V
trr (typ.) 27 ns
TJ max. 175 °C
Package SMPC (TO-277A)
Circuit configuration Single
Anode 1
Anode 2
Cathode
K
SMPC (TO-277A)
K
2
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 100 V
Average rectified forward current IF(AV) TSp = 165 °C 4 A
Non-repetitive peak surge current IFSM TJ = 25 °C 130
Operating junction and storage temperatures TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 100 - -
V
Forward voltage VF
IF = 4 A - 0.86 0.93
IF = 4 A, TJ = 125 °C - 0.73 0.79
Reverse leakage current IR
VR = VR rated - - 2 μA
TJ = 125 °C, VR = VR rated - 1 10
Junction capacitance CTVR = 100 V - 24 - pF
VS-4ESH01-M3
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Revision: 06-Jul-17 2Document Number: 94998
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 27 -
ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25
TJ = 25 °C
IF = 4 A
dIF/dt = 200 A/μs
VR = 160 V
-20-
TJ = 125 °C - 31 -
Peak recovery current IRRM
TJ = 25 °C - 2.2 - A
TJ = 125 °C - 4.4 -
Reverse recovery charge Qrr
TJ = 25 °C - 22 - nC
TJ = 125 °C - 70 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range TJ, TStg -55 - 175 °C
Thermal resistance,
junction to solder pad RthJ-Sp -2.23
°C/W
Thermal resistance,
junction to ambient RthJA -85-
Approximate weight 0.1 g
0.0035 oz.
Marking device Case style SMPC (TO-277A) JEH1
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 150°C
TJ= 25 °C
TJ= 175 °C
TJ= 125°C
VR - Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
0.01
0.1
1
10
100
1000
0 255075100
25 °C
125 °C
150 °C
175 °C
VS-4ESH01-M3
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Revision: 06-Jul-17 3Document Number: 94998
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
10
100
0255075100
CT- Junction Capacitance (pF)
VR- Reverse Voltage (V)
155
160
165
170
175
180
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VRapplied
See note (1)
DC
0
1
2
3
4
5
01234567
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
5
10
15
20
25
30
35
40
45
100 1000
trr (ns)
dIF/dt (A/μs)
25 °C
125 °C
IF= 4 A
0
20
40
60
80
100
120
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
IF= 4 A
VS-4ESH01-M3
www.vishay.com Vishay Semiconductors
Revision: 06-Jul-17 4Document Number: 94998
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 8 - Transient Thermal Impedance, Junction to Case
Fig. 9 - Transient Thermal Impedance, Junction to Ambient
Fig. 10 - Reverse Recovery Waveform and Definitions
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZthJC - Thermal Impedance (°C/W)
t1- Rectangular Pulse Duration (s)
Single pulse
Typical, junction to case
Steady state value (DC)
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZthJA - Thermal Impedance (°C/W)
t1- Rectangular Pulse Duration (s)
Single pulse
Typical, junction to ambient
Steady state value (DC)
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-4ESH01-M3
www.vishay.com Vishay Semiconductors
Revision: 06-Jul-17 5Document Number: 94998
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-4ESH01-M3/86A 1500 1500 7" diameter plastic tape and reel
VS-4ESH01-M3/87A 6500 6500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95570
Part marking information www.vishay.com/doc?95565
Packaging information www.vishay.com/doc?88869
SPICE model www.vishay.com/doc?96073
2- Current rating (4 = 4 A)
3- Circuit configuration:
4- S = SMPC package
5- Process type,
H = hyperfast recovery
6- Voltage code (01 = 100 V)
7- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Device code
51 32 4 6 7
VS- 4 E S H 01 -M3
1- Vishay Semiconductors product
E = single diode
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 03-Sep-14 1Document Number: 95570
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-277A (SMPC)
DIMENSIONS in inches (millimeters)
Conform to JEDEC® TO-277A
0.016 (0.40)
0.006 (0.15)
0.047 (1.20)
0.039 (1.00)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
0.173 (4.40)
0.049 (1.24)
0.037 (0.94)
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.084 (2.13) NOM.
0.155 (3.94)
NOM.
Mounting Pad Layout
0.268
(6.80)
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
0.189 (4.80)
MIN.
0.187 (4.75)
0.175 (4.45)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.171 (4.35)
0.167 (4.25)
K
2
1
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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