To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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Renesas Electronics document. W e appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1647(L), 2SK1647(S)
Silicon N Channel MOS FET REJ03G0963-0200
(Previous: ADE-208-13 06)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary br eakdown
• Suitable for sw i t c hi ng regulator and DC-DC con verter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 900 V
Gate to source voltage VGSS ±30 V
Drain current ID 2 A
Drain peak current ID(pulse)*1 6 A
Body to drain diode reverse drain current IDR 2 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 900 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µ, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 5.0 7.0 Ω I
D = 1 A, VGS = 10 V *3
Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 20 V *3
Input capacitan ce Ciss — 425 — pF
Output capacitance Coss — 175 — pF
Reverse transfer capacitance Crss — 85 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 35 — ns
Turn-off delay time td(off) — 60 — ns
Fall time tf — 50 — ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0
Body to drain diode reverse recovery
time trr — 700 — ns IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
10
2
0.5
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
5
1
0.2
1
0.1
3 10 30 100 300 1,000
0.05
0.02
0.01
Ta = 25°C
100 µs
1 ms
PW = 10 ms (1 shot)
DC Operation (T
C
= 25
°
C)
Operation in this area
is limited by RDS (on)
10 µs
5
20 50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
4
1
10 30 400
2
3
Drain Current ID (A)
VGS = 3.0 V
4.0 V
Pulse Test
4.5 V
5.0 V
5.5 V
10 V
6 V
5
410
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
4
1
2680
2
3TC = 25°C
–25°C
75°C
VDS = 20 V
Pulse Test
50
820
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
40
10
412160
20
30
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
1 A
2 A
ID = 3 A
50
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
20
2
1
5
10
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.5
2
VGS = 10 V
15 V
0.05 0.1 0.2 0.5 1 5
60
40
20
0 50 100 150
Case Temperature TC (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 4 of 7
20
40 160
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
16
4
080120
0
8
12
Static Drain to Source on State
Resistance vs. Temperature
–40
V
GS
= 10 V
Pulse Test I
D
= 3 A
2 A
1 A
5
0.1 2
Drain Current ID (A)
1
0.1
0.2 1
0.5
0.2
0.05 0.5
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
2
V
DS
= 20 V
Pulse Test
75°C
T
C
= 25°C
5
–25°C
5,000
0.1 2
Reverse Drain Current IDR (A)
2,000
100
0.2 10.05
500
1,000
50
0.5
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
200
5
1,000
16 40
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
800
200
82432
400
600
20
16
4
0
8
12
Gate to Source Voltage VGS (V)
0
400 V
600 V
V
DD
= 250 V
V
GS
V
DS
V
DD
= 600 V
400 V
250 V I
D
= 2 A
500
Drain Current ID (A)
Switching Time t (ns)
200
5
50
100
0.05
10
Switching Characteristics
t
d (off)
0.1 0.5 10.2 2 5
t
f
t
r
t
d (on)
20
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
•
•
100
20 50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
10
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
1,000
1
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 5 of 7
5
0.8 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
4
0.4 1.2 1.6
2
3
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
15 V, 10 V
V
GS
= 0, –5 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1.0
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 2.50°C/W, T
C
= 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
30 V
=
..
Waveforms
Vin
t
d
(on)
10%
t
r
90%
Vout 10%
90% 90%
t
f
t
d
(off)
10%
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK1647(L) , 2SK 164 7( S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1647L-E 500 pcs Box (Sack)
2SK1647STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .3.0
