SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 600 V Tc = 25 C 502 A Tc = 80 C 379 A 400 A ICnom ICRM SEMiX(R) 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE 15 V VCES 600 V 800 A -20 ... 20 V 6 s -40 ... 175 C Tc = 25 C 543 A Tc = 80 C 397 A 400 A Tj = 150 C Inverse diode IF Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1800 A -40 ... 175 C Tc = 25 C 566 A Tc = 80 C 412 A 400 A Tj Freewheeling diode IF Tj = 175 C Typical Applications* IFnom * Matrix Converter * Resonant Inverter * Current Source Inverter IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1800 A -40 ... 175 C Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance Tj Module It(RMS) Tterminal = 80 C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 400 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 C 1.45 1.85 V Tj = 150 C 1.7 2.1 V Tj = 25 C 0.9 1 V Tj = 150 C 0.85 0.9 V Tj = 25 C 1.4 2.1 m Tj = 150 C VGE(th) VGE=VCE, IC = 6.4 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 C 5 2.1 3.0 m 5.8 6.5 V 0.15 0.45 mA Tj = 150 C mA f = 1 MHz 24.7 nF f = 1 MHz 1.54 nF f = 1 MHz 0.73 nF QG VGE = - 8 V...+ 15 V 3200 nC RGint Tj = 25 C 1.00 GAR (c) by SEMIKRON Rev. 1 - 23.03.2011 1 SEMiX402GAR066HDs Characteristics Symbol td(on) tr Eon td(off) tf Conditions VCC = 300 V IC = 400 A VGE = 15 V RG on = 4.5 RG off = 4.5 Eoff SEMiX(R) 2s Trench IGBT Modules SEMiX402GAR066HDs Rth(j-c) rF * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications* * Matrix Converter * Resonant Inverter * Current Source Inverter Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 150 Tj = 150 C 125 ns Tj = 150 C 22 mJ Tj = 150 C 900 ns Tj = 150 C 65 ns Tj = 150 C 24 mJ ns 0.12 K/W Tj = 25 C 1.4 1.60 V Tj = 150 C 1.4 1.6 V Tj = 25 C 0.9 1 1.1 V Tj = 150 C 0.75 0.85 0.95 V Tj = 25 C 0.8 1.0 1.3 m Tj = 150 C 1.1 1.4 1.6 m IF = 400 A Tj = 150 C di/dtoff = 3700 A/s T = 150 C j VGE = -8 V Tj = 150 C VCC = 300 V per diode Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 400 A VGE = 0 V chip VF0 IRRM Features min. Tj = 150 C 250 A 47 C 10 mJ 0.15 K/W Tj = 25 C 1.3 1.53 V Tj = 150 C 1.3 1.5 V Tj = 25 C 0.9 1 1.1 V Tj = 150 C 0.75 0.85 0.95 V Tj = 25 C 0.7 0.9 1.1 m 1.2 1.4 m Tj = 150 C IF = 400 A Tj = 150 C di/dtoff = 3700 A/s T = 150 C j VGE = -8 V Tj = 150 C VCC = 300 V per diode 1.0 250 A 47 C 10 mJ 0.15 K/W Module LCE RCC'+EE' 18 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 C 0.7 m TC = 125 C 1 m 0.045 to terminals (M6) Mt nH K/W 3 5 2.5 5 Nm Nm Nm w 250 g Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K GAR 2 Rev. 1 - 23.03.2011 (c) by SEMIKRON SEMiX402GAR066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 1 - 23.03.2011 3 SEMiX402GAR066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 - 23.03.2011 (c) by SEMIKRON SEMiX402GAR066HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. (c) by SEMIKRON Rev. 1 - 23.03.2011 5