MICROWAVE POWER GaN HEMT
TGI5964-120L
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FEATURES
･BROAD
BAND
INTERNALLY
MATCHED
HEMT
･HIGH POWER
Pout= 51.0dBm at Pin= 43.0dBm
･HIGH
GAIN
GL= 13.5dB at Pin= 20.0dBm
･LOW
INTERMODULATION
DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm
Single Carrier Level
･HERMETICALLY
SEALED PACKAGE
RF
PERFORMANCE
SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
MIN.
TYP.
MAX.
Output Power
Pout
VDS= 24V
IDSset= 4.0A
f = 5.9 to 6.4GHz
@Pin= 43dBm
dBm
50.0
51.0
Drain Current
IDS1
A
10.0
12.0
Power Added Efficiency
add
%
44
Linear Gain
GL
@Pin= 20dBm
dB
12.5
13.5
Gain flatness
G
dB
±0.8
3rd Order Intermodulation
Distortion
IM3
Two-Tone Test
Po= 44.0dBm, f= 5MHz
(Single Carrier Level)
dBc
-25
-30
Drain Current
IDS2
A
8.0
Channel Temperature Rise
Tch
(VDS X IDS + Pin – Pout)
X Rth(c-c)
°C
120
140
Recommended
Gate
Resistance(Rg): 28
ELECTRICAL
CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
MIN.
TYP.
MAX.
Transconductance
gm
S
8.0
Pinch-off Voltage
VGSoff
V
-2.6
-4.0
-6.0
Saturated Drain Current
IDSS
A
28
Gate-Source Breakdown Voltage
VGSO
V
-10
Thermal Resistance
Rth(c-c)
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
MICROWAVE POWER GaN HEMT
TGI5964-120L
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 2 / 9
incorporating this product.
ABSOLUTE
MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
50
Gate-Source Voltage
VGS
V
-10
Drain Current
IDS
A
18
Total Power Dissipation (Tc= 25°C)
PT
W
280
Channel Temperature
Tch
°C
250
Storage Temperature
Tstg
°C
-65 to +175
PACKAGE
OUTLINE (7-AA06A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
MICROWAVE POWER GaN HEMT
TGI5964-120L
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 3 / 9
350°C.
･Pout , Gain , PAE , IDS vs. Pin
VDS= 24 V, IDSset= 4.0 A, f= 5.9, 6.15, 6.4 GHz, Ta= +25 ℃
0
3
6
9
12
15
18 22 26 30 34 38 42 46
IDS (A)
Pin (dBm)
IDS vs Pin
VDS=24V, IDS=4A
5.9GHz
6.15GHz
6.4GHz
0
10
20
30
40
50
60
18 22 26 30 34 38 42 46
PAE (%)
Pin (dBm)
PAE vs Pin
VDS=24V, IDS=4A
5.9GHz
6.15GHz
6.4GHz
0
4
8
12
16
20
24
18 22 26 30 34 38 42 46
Gain (dB)
Pin (dBm)
Gain vs Pin
VDS=24V, IDS=4A
5.9GHz
6.15GHz
6.4GHz
28
32
36
40
44
48
52
56
18 22 26 30 34 38 42 46
Pout (dBm)
Pin (dBm)
Pout vs Pin
VDS=24V, IDS=4A
5.9GHz
6.15GHz
6.4GHz
MICROWAVE POWER GaN HEMT
TGI5964-120L
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･IM3, IM5 vs. Pout
VDS= 24 V, IDSset= 4.0 A, f= 5.9, 6.15, 6.4 GHz, Δf= 5 MHz , Ta= +25 ℃
･Pout vs. Frequency
VDS= 24 V, IDSset= 4.0 A, Ta= +25 ℃
-70
-60
-50
-40
-30
-20
25 30 35 40 45 50
IM3 (dBc)
Pout (dBm) @S.C.L
IM3 vs Pout
VDS=24V, IDS=4.0A
5.9GHz
6.15GHz
6.4GHz
32
34
36
38
40
42
44
46
48
50
52
54
5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
Pout (dBm)
f (GHz)
Pout vs freq
VDS=24V, IDS=4.0A 43dBm
41dBm
39dBm
37dBm
35dBm
33dBm
31dBm
29dBm
27dBm
25dBm
23dBm
-70
-60
-50
-40
-30
-20
25 30 35 40 45 50
IM5 (dBc)
Pout (dBm) @S.C.L
IM5 vs Pout
VDS=24V, IDS=4.0A
5.9GHz
6.15GHz
6.4GHz
MICROWAVE POWER GaN HEMT
TGI5964-120L
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･Pout , Gain , PAE , IDS vs. Pin vs. IDSset
VDS= 24 V, IDSset= 2.0, 4.0, 6.0 A, f= 6.15 GHz, Ta= +25 ℃
0
3
6
9
12
15
18 22 26 30 34 38 42 46
IDS (A)
Pin (dBm)
IDS vs Pin
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
0
10
20
30
40
50
60
18 22 26 30 34 38 42 46
PAE (%)
Pin (dBm)
PAE vs Pin
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
0
4
8
12
16
20
24
18 22 26 30 34 38 42 46
Gain (dB)
Pin (dBm)
Gain vs Pin
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
28
32
36
40
44
48
52
56
18 22 26 30 34 38 42 46
Pout (dBm)
Pin (dBm)
Pout vs Pin
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
MICROWAVE POWER GaN HEMT
TGI5964-120L
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･IM3, IM5 vs. Pout vs. IDSset
VDS= 24 V, IDSset= 2.0, 4.0, 6.0 A, f= 6.15 GHz, Δf= 5 MHz, Ta= +25 ℃
-70
-60
-50
-40
-30
-20
25 30 35 40 45 50
IM5 (dBc)
Pout (dBm) @S.C.L
IM5 vs Pout
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
-70
-60
-50
-40
-30
-20
25 30 35 40 45 50
IM3 (dBc)
Pout (dBm) @S.C.L
IM3 vs Pout
VDS=24V, f=6.15GHz
2.0Aset
4.0Aset
6.0Aset
MICROWAVE POWER GaN HEMT
TGI5964-120L
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･Pout , Gain , PAE , IDS vs. Pin vs. Temperature
VDS= 24 V, IDSset= 4.0 A, f= 6.15 GHz, Ta= -25, +25, +75 ℃
0
3
6
9
12
15
18 22 26 30 34 38 42 46
IDS (A)
Pin (dBm)
IDS vs Pin
VDS=24V, IDset=4.0A, f=6.15GHz
-25°C
+25°C
+75°C
0
10
20
30
40
50
60
18 22 26 30 34 38 42 46
PAE (%)
Pin (dBm)
PAE vs Pin
VDS=24V, IDset=4.0A, f=6.15GHz
-25°C
+25°C
+75°C
0
4
8
12
16
20
24
18 22 26 30 34 38 42 46
Gain (dB)
Pin (dBm)
Gain vs Pin
VDS=24V, IDset=4.0A, f=6.15GHz
-25°C
+25°C
+75°C
28
32
36
40
44
48
52
56
18 22 26 30 34 38 42 46
Pout (dBm)
Pin (dBm)
Pout vs Pin
VDS=24V, IDset=4.0A, f=6.15GHz
-25°C
+25°C
+75°C
MICROWAVE POWER GaN HEMT
TGI5964-120L
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 8 / 9
･S-Parameters
VDS= 24 V, IDSset= 4.0 A, f= =4.0 to 8.0 GHz, Ta= +25 ℃
z
-30
-20
-10
0
10
20
4 5 6 7 8
S21, S12(dB)
f(GHz)
S21, S12
VDS=24V, IDS=4.0A
S21
S12
-25
-20
-15
-10
-5
0
4 5 6 7 8
S11, S22(dB)
f(GHz)
S11, S22
VDS=24V, IDS=4.0A
S11
S22
MICROWAVE POWER GaN HEMT
TGI5964-120L
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 9 / 9
RESTRICTIONS
ON
PRODUCT
USE
･All presented data are typical curves/values and for reference only as design guidance.
･Devices are not necessarily guaranteed at these curves and values.
･TISS, and its subsidiaries and affiliates (collectively ”TISS”), reserve the right to make changes to the information in
this document, and related hardware, software and systems (collectively “Product”) without notice.
･This document and any information herein may not be reproduced without prior written permission from
TISS. Even with TISS’s written permission, reproduction is permissible only if reproduction is without
alteration/omission.
･Though TISS works continually to improve Product’s quality and reliability, Product can malfunction or fail.
Customers are responsible for complying with safety standards and for providing adequate designs and
safeguards for their hardware, software and systems which minimize risk and avoid situations in which a
malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including
data loss or corruption. Before creating and producing designs and using, customers must also refer to and
comply with (a) the latest versions of all relevant TISS information, including without limitation, this
document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth therein and (b) the instructions for the application that Product will be used with or for,
Customers are solely responsible for all aspects of their own product design or applications, including but not
limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b)
evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating
all operating parameters for such designs and applications. TISS ASSUMES NO LIABILITY FOR
CUSTOMERS’ PRODUCT DESIGN OR APPLI CATIONS.
･Product is intended for use in communications equipment (including Radar) on the ground. Product is neither
Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property
damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment
used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment
used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
control combustion or explosions, safety devices, elevators and escalators, devices related to electric power,
and equipment used in finance-related fields. If you are considering using the Product in such situation, please
contact us in advance.
･Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in
part.
･Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable laws or regulations.
･The information contained herein is presented only as guidance for Product use. No responsibility is assumed
by TISS for any infringement of patents or any other intellectual property rights of third parties that may
result from the use of Product. No license to any intellectual property right is granted by this document, whether
express or implied, by estoppel or otherwise.