MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES BROAD BAND INTERNALLY MATCHED HEMT HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm HIGH GAIN GL= 13.5dB at Pin= 20.0dBm LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power Pout Drain Current IDS1 Power Added Efficiency add Linear Gain GL ( Ta= 25C ) CONDITIONS VDS= 24V IDSset= 4.0A f = 5.9 to 6.4GHz @Pin= 43dBm @Pin= 20dBm Gain flatness G 3rd Order Intermodulation Distortion IM3 Drain Current IDS2 Two-Tone Test Po= 44.0dBm, f= 5MHz (Single Carrier Level) Tch (VDS X IDS + Pin - Pout) X Rth(c-c) Channel Temperature Rise UNIT MIN. TYP. MAX. dBm 50.0 51.0 A 10.0 12.0 % 44 dB 12.5 13.5 dB 0.8 dBc -25 -30 A 8.0 C 120 140 UNIT MIN. TYP. MAX. S 8.0 V -2.6 -4.0 -6.0 A 28 V -10 C/W 0.6 0.8 Recommended Gate Resistance(Rg): 28 ELECTRICAL CHARACTERISTICS CHARACTERISTICS SYMBOL ( Ta= 25C ) CONDITIONS Saturated Drain Current IDSS VDS= 5V IDS= 10.0A VDS= 5V IDS= 46mA VDS= 5V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -20mA Transconductance Pinch-off Voltage Thermal Resistance gm VGSoff Rth(c-c) Channel to Case The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as "TISS") for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 1/9 MICROWAVE POWER GaN HEMT TGI5964-120L incorporating this product. ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 18 Total Power Dissipation (Tc= 25C) PT W 280 Channel Temperature Tch C 250 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (7-AA06A) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C or 3 seconds at Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 2/9 MICROWAVE POWER GaN HEMT TGI5964-120L 350C. Pout , Gain , PAE , IDS vs. Pin VDS= 24 V, IDSset= 4.0 A, f= 5.9, 6.15, 6.4 GHz, Ta= +25 Pout vs Pin VDS=24V, IDS=4A 56 24 5.9GHz 6.15GHz 6.4GHz 52 5.9GHz 6.15GHz 6.4GHz 20 48 16 44 Gain (dB) Pout (dBm) Gain vs Pin VDS=24V, IDS=4A 40 36 12 8 4 32 0 28 18 22 26 30 34 Pin (dBm) 38 42 18 46 22 PAE vs Pin VDS=24V, IDS=4A 60 50 38 42 46 42 46 Page: 3/9 IDS vs Pin VDS=24V, IDS=4A 15 5.9GHz 6.15GHz 6.4GHz 26 30 34 Pin (dBm) 5.9GHz 6.15GHz 6.4GHz 12 IDS (A) PAE (%) 40 30 20 9 6 3 10 0 0 18 22 26 30 34 Pin (dBm) 38 42 46 18 22 26 30 34 Pin (dBm) 38 Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 MICROWAVE POWER GaN HEMT TGI5964-120L IM3, IM5 vs. Pout VDS= 24 V, IDSset= 4.0 A, f= 5.9, 6.15, 6.4 GHz, f= 5 MHz , Ta= +25 IM3 vs Pout VDS=24V, IDS=4.0A -20 -30 -30 -40 -40 IM5 (dBc) IM3 (dBc) -20 -50 5.9GHz 6.15GHz 6.4GHz -60 IM5 vs Pout VDS=24V, IDS=4.0A 5.9GHz 6.15GHz 6.4GHz -50 -60 -70 -70 25 30 35 40 45 Pout (dBm) @S.C.L 25 50 30 35 40 45 Pout (dBm) @S.C.L 50 Pout vs. Frequency VDS= 24 V, IDSset= 4.0 A, Ta= +25 Pout vs freq VDS=24V, IDS=4.0A 54 43dBm 52 41dBm Pout (dBm) 50 39dBm 48 37dBm 46 35dBm 44 33dBm 42 31dBm 40 29dBm 38 27dBm 36 25dBm 34 23dBm 32 5.6 5.8 6.0 6.2 6.4 f (GHz) 6.6 6.8 7.0 Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 4/9 MICROWAVE POWER GaN HEMT TGI5964-120L Pout , Gain , PAE , IDS vs. Pin vs. IDSset VDS= 24 V, IDSset= 2.0, 4.0, 6.0 A, f= 6.15 GHz, Ta= +25 Pout vs Pin VDS=24V, f=6.15GHz 56 24 2.0Aset 4.0Aset 6.0Aset 52 2.0Aset 4.0Aset 6.0Aset 20 48 16 44 Gain (dB) Pout (dBm) Gain vs Pin VDS=24V, f=6.15GHz 40 36 12 8 4 32 0 28 18 22 26 30 34 Pin (dBm) 38 42 18 46 22 PAE vs Pin VDS=24V, f=6.15GHz 60 50 38 42 46 IDS vs Pin VDS=24V, f=6.15GHz 15 2.0Aset 4.0Aset 6.0Aset 26 30 34 Pin (dBm) 2.0Aset 4.0Aset 6.0Aset 12 IDS (A) PAE (%) 40 30 9 6 20 3 10 0 0 18 22 26 30 34 Pin (dBm) 38 42 46 18 22 26 30 34 38 Pin (dBm) Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 42 46 Page: 5/9 MICROWAVE POWER GaN HEMT TGI5964-120L IM3, IM5 vs. Pout vs. IDSset VDS= 24 V, IDSset= 2.0, 4.0, 6.0 A, f= 6.15 GHz, f= 5 MHz, Ta= +25 IM3 vs Pout VDS=24V, f=6.15GHz -20 -30 -30 -40 -40 IM5 (dBc) IM3 (dBc) -20 -50 2.0Aset 4.0Aset 6.0Aset -60 IM5 vs Pout VDS=24V, f=6.15GHz 2.0Aset 4.0Aset 6.0Aset -50 -60 -70 -70 25 30 35 40 45 Pout (dBm) @S.C.L 50 25 30 35 40 45 Pout (dBm) @S.C.L Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 50 6/9 MICROWAVE POWER GaN HEMT TGI5964-120L Pout , Gain , PAE , IDS vs. Pin vs. Temperature VDS= 24 V, IDSset= 4.0 A, f= 6.15 GHz, Ta= -25, +25, +75 56 Pout vs Pin VDS=24V, IDset=4.0A, f=6.15GHz -25C +25C +75C 24 48 20 44 16 Gain (dB) Pout (dBm) 52 40 36 Gain vs Pin VDS=24V, IDset=4.0A, f=6.15GHz -25C +25C +75C 12 8 32 4 28 18 60 22 38 42 46 0 18 PAE vs Pin VDS=24V, IDset=4.0A, f=6.15GHz -25C +25C +75C 50 15 40 12 30 9 IDS (A) PAE (%) 26 30 34 Pin (dBm) 20 22 26 30 34 Pin (dBm) 38 42 46 IDS vs Pin VDS=24V, IDset=4.0A, f=6.15GHz -25C +25C +75C 6 10 3 0 18 22 26 30 34 Pin (dBm) 38 42 46 0 18 22 26 30 34 38 Pin (dBm) Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 42 46 Page: 7/9 MICROWAVE POWER GaN HEMT TGI5964-120L S-Parameters VDS= 24 V, IDSset= 4.0 A, f= =4.0 to 8.0 GHz, Ta= +25 S11, S22 VDS=24V, IDS=4.0A z 0 20 -5 10 S21, S12(dB) S11, S22(dB) S21, S12 VDS=24V, IDS=4.0A -10 -15 S11 S22 -20 0 S21 S12 -10 -20 -25 -30 4 5 6 f(GHz) 7 8 4 5 6 f(GHz) Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 7 8 Page: 8/9 MICROWAVE POWER GaN HEMT TGI5964-120L RESTRICTIONS ON PRODUCT USE All presented data are typical curves/values and for reference only as design guidance. Devices are not necessarily guaranteed at these curves and values. TISS, and its subsidiaries and affiliates (collectively "TISS"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TISS. Even with TISS's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TISS works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Product is intended for use in communications equipment (including Radar) on the ground. Product is neither Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustion or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. If you are considering using the Product in such situation, please contact us in advance. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TISS for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 5_20170919_No1288 Page: 9/9