This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A Unit: mm 8.0+0.5 -0.1 3.20.2 3.050.1 11.00.5 16.01.0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. * High collector-emitter voltage (Base open) VCEO * Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier * TO-126B package which requires no insulation plate for installation to the heat sink 3.80.3 Features 1.90.1 M Di ain sc te on na tin nc ue e/ d 3.160.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Symbol 2SA0794 Rating -100 VCBO Unit 0.750.1 V -120 2SA0794A Collector-emitter voltage 2SA0794 (Base open) 2SA0794A VCEO Emitter-base voltage (Collector open) VEBO -100 4.60.2 1 2 0.50.1 0.50.1 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 V -120 IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg V - 0.5 A -1 A 1.2 W 150 C -55 to +150 C ue Collector current -5 1.760.1 2.30.2 Parameter Symbol 2SA0794 2SA0794A an Collector-emitter voltage (Base open) ce /D isc on tin Electrical Characteristics Ta = 25C 3C en Emitter-base voltage (Collector open) Conditions VCEO IC = -100 A, IB = 0 VEBO IE = -1 A, IC = 0 Min 90 VCE = -5 V, IC = -500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = -500 mA, IB = -50 mA Base-emitter saturation voltage VBE(sat) IC = -500 mA, IB = -50 mA int Ma Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Unit V -5 VCE = -10 V, IC = -150 mA hFE1 Max -120 hFE2 Forward current transfer ratio * Typ -100 V 220 - 0.2 - 0.4 V - 0.85 -1.20 V 100 VCB = -10 V, IE = 50 mA, f = 200 MHz 120 VCB = -10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00001BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA0794, 2SA0794A PC Ta IC VCE TC = 25C Collector current IC (A) - 0.8 - 0.6 0.8 -4 mA VCE = -10 V TC = 25C -1.0 Collector current IC (A) -18 mA IB = -20 mA -16 mA -14 mA -12 mA -10 mA -8 mA -6 mA -1.0 1.2 -1.2 - 0.8 - 0.6 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) IC I B -1.2 1.6 -2 mA - 0.4 0.4 - 0.2 40 80 120 160 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) IC VBE - 0.6 VCE = -10 V - 0.5 Collector current IC (A) Ta = 125C - 0.4 -25C 75C - 0.3 -2 0 -4 -6 -8 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 hFE IC -1 TC = 100C 25C -25C - 0.01 - 0.01 - 0.1 -1 25C 100 10 - 0.01 -25C - 0.1 Collector current IC (A) 2 Transition frequency fT (MHz) TC = 100C -1 -1 - 0.01 - 0.01 VCB = -10 V f = 200 MHz TC = 25C 160 120 80 40 1 -8 -10 -12 -14 10 Emitter current IE (mA) SJD00001BED IC / IB = 10 TC = -25C 100C 25C - 0.1 -1 Collector current IC (A) Collector current IC (A) fT I E 0 -6 - 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob an en Ma int Forward current transfer ratio hFE 1 000 -4 VBE(sat) IC 200 VCE = -10 V -2 0 VCE(sat) IC IC / IB = 10 ce /D isc on tin Base-emitter voltage VBE (V) 0 -12 Base current IB (mA) ue - 0.1 -10 Collector-emitter voltage VCE (V) - 0.1 - 0.2 0 0 Base-emitter saturation voltage VBE(sat) (V) 0 - 0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 - 0.4 100 Cob VCB 50 IE = 0 f = 1 MHz TC = 25C 40 30 20 10 0 -1 -10 -100 Collector-base voltage VCB (V) 103 102 ICBO (Ta) ICBO (Ta = 25C) VCE = 20 V 103 40 80 120 160 Ambient temperature Ta (C) 200 102 10 1 Collector current IC (A) 105 Ambient temperature Ta (C) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en 0 int 1 Ma ICEO (Ta) ICEO (Ta = 25C) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SA0794, 2SA0794A ICEO Ta 104 ICBO Ta VCB = -20 V 10 0 40 80 SJD00001BED 120 160 -10 Safe operation area Single pulse TC = 25C 104 -1 ICP IC - 0.1 t=1s - 0.001 -1 -10 t = 10 ms - 0.01 Collector-emitter voltage VCE (V) -100 -1 000 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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