©2004 Fairchild Semiconductor Corporation Rev. B, May 2004
2N5401
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base V oltage -160 V
V
CEO
Collector-Emitter Voltage -150 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -600 mA
P
C
Collector Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condit i on Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -160 V
BV
CEO
* Collect or-Emitte r Breakdo wn Voltage I
C
= -1mA, I
B
=0 -150 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
=0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -120V, I
E
=0 -50 nA
I
EBO
Emitter Cut-off Current V
EB
= -3V, I
C
=0 -50 nA
h
FE
* DC Current Gain I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -50mA, V
CE
= -5V
30
60
50 240
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA -0.2
-0.5 V
V
V
BE
(sat) * Base-Emitt er Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA -1
-1 V
V
f
T
Current Gain Bandwidth Product I
C
= -10mA, V
CE
= -10V,
f=100MHz 100 400 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f= 1 MHz 6 pF
N
F
Noise Figure I
C
= -250µA, V
CE
= -5V
R
S
=1KΩ
f=10Hz to 15.7KHz
8dB
2N5401
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= 150V
• Collector Dissipation: P
C
(max)=625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1
©2004 Fairchild Semiconductor Corporation
2N5401
Rev. B, May 2004
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Base-E mitter On Voltage Figure 4. Output Capacita nce
Figure 5. Current Gain Bandwidth Product
-1 -10 -100 -1000
10
100
1000
V
CE
= -5V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
0.1
1
10
100
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAG E
-1 -10 -100 -1000
1
10
100
1000
V
CE
= -10V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
2N5401
Dimensions in Millimeters
Rev. B, May 2004©2004 Fairchild Semiconductor Corporation
©2004 Fairchild Semiconductor Corporation Rev. I11
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