TG2H214120 2140MHz 120W WCDMA Power Amplifier Applications * * * High power and high linearity applications Wireless Base Station Amplifiers Tower-mounted amplifiers Product Features * * * * * * * * * Functional Block Diagram Optimized for 2110 - 2170 MHz operation 70% Saturated CW Collector Efficiency P1dB > 120W Optimized for use in a Doherty amplifier Well suited for use with Envelope Tracking Internally matched for ease of use. Easily linearizable with Digital Pre-distortion 28V operation Mismatch tolerance at 28V: 10:1 CW all angles 1 3 General Description Pin Configuration The TG2H214120 is part of a series of internally matched High Voltage Hetero-junction Bipolar Transistors (HVHBT) suitable for a variety of next generation 3G & 4G base station applications. These devices offer dramatic improvements in efficiency compared to conventional LDMOS transistors. The TG2H214120 typically provides 70% CW saturated collector efficiency. In WCDMA applications, this power amplifier typically provides 32% collector efficiency at 45 dBm average output power, and 16.5 dB of gain, while maintaining -60 dBc ACPR with Digital Predistortion. Efficiency climbs to a typical value of 55% when used in Doherty applications. The TG2H214120 is an excellent choice for applications requiring high power and high efficiency. The TG2H214120 is Lead -free and RoHS compliant 2 Pin # 1 2 3 Symbol Base, Input DC Bias, RF input Collector, Output DC Bias, RF output Emitter, DC and RF Ground/Common Ordering Information Part No. TG2H214120-FS (1) TG2H214120-FS-T/R (2) TG2H214120-FL (1) TG2H214120-FL-T/R (2) Description Power Amp, Earless Package Power Amp, Earless Package Power Amp, Eared Package Power Amp, Eared Package (1): Shipment type = Bulk (tray) (2): Shipment type = Tape and reel (quantity=250pcs) TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 1 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Specifications Absolute Maximum Ratings Parameter Storage Temperature VSWR @P1dB CW all phases Collector - Base Voltage (VCES) Base - Emitter Voltage (VBE) Operating Case Temperature (Tc) Operating Junction Temperature (Tj) Recommended Operating Conditions Rating Parameter -65 to 150 oC 10:1 -0.5 to +65 V -4 to +2V +150 oC +200 oC VCE Icq Thermal Resistance (Rth) Min 10 500 Typ 28 550 1.27 Max Units 32 600 V mA o C/W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions: f=2110-2170MHz Bandwidth, VCE = +28 V, ICQ = 550 mA, Single-Ended Class AB 50 matched fixture; T= 25 C Parameter Gain @P1dB Input Return Loss @P1dB Output Power @P1dB Collector Efficiency @P1dB Conditions See Note 1 See Note 1 See Note 1 See Note 1 Min Typical 16.2 -16.0 51.1 66 Max Units dB dB dBm % Test conditions: f=2110-2170MHz Bandwidth, VCE = +28 V, ICQ = 550 mA, Single-Ended Class AB 50 matched fixture; T= 25 C Parameter Gain Input Return Loss Collector Efficiency Video Bandwidth Adjacent Channel Power Ratio (ACP5) Conditions See Note 2 See Note 2 See Note 2 See Note 3 See Note 2 Min Typical 16.6 -20.6 32 50 -36 Max Units dB dB % MHz dBc Notes: 1. Test signal = CW 2. Single carrier WCDMA 3GPP Test Model 1, 64 DPCH, , 5 MHz, 50% clipping, PAR=7.1 dB @ 0.01% Probability, Pout = +45 dBm 3. Measured with two tones CW at constant output power for IM3 of -30dBc. Tone spacing varies from 100KHz to 100MHz. Video bandwidth measured for IM3 deviation of 3dB. Test conditions: DC, VCC = +28 V, ICQ = 550 mA, Parameter Collector - Base Lkge Current (ICBO) Collector - Emitter Lkge Current (ICES) Base Quiescent Voltage (VBQ) Output Capacitance (COUT) TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. Conditions Vcb=65V, E open Vce=28V, Vbe=0V Vce=28V, Ic=550mA - 2 of 10 - Min Typical 1.26 300 Max 90 4 Units uA uA V pF Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Typical Performance Plots 2110-2170 MHz Test conditions: VCE = +28 V, ICQ = 550 mA; T= 25 C, Test signal = CW. Small Signal Frequency Response Gain vs. Frequency 20 19 -5 18 17 16 IRL (dB) Gain (dB) Input Return Loss vs. Frequency 0 15 14 -10 -15 -20 13 12 -25 11 -30 10 2 2.05 2.1 2.15 2.2 2.25 2 2.3 2.1 2.05 2.15 2.2 2.25 2.3 Freq (GHz) Freq (GHz) Power Sweeps Gain vs. Pout vs. Frequency 20 19 70 Collec. Effiency (%) 18 17 Gain (dB) Collec.Eff vs. Pout vs. Frequency 80 16 15 14 2170 MHz 13 2140 MHz 12 2110 MHz 2170 MHz 2140 MHz 60 2110 MHz 50 40 30 20 11 10 10 43 44 45 46 47 48 49 50 51 52 53 (c) 2010 TriQuint Semiconductor, Inc. 44 45 46 47 48 49 50 51 52 53 Pout (dBm) Pout (dBm) TG2H214120 Datasheet: Rev D 12/15/2010 43 - 3 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Load Pull Impedances Test conditions: VCE = +28 V, ICQ = 550 mA; T= 25 C, Test signal = CW, max. output power Z0=10 Zs Zl F MHz 2110 2140 2170 Zsource 2.70-j*2.20 2.78-j*2.09 2.86-j*1.97 Zs TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. Zload 2.32-j*2.00 2.29-j*2.10 2.31-j*2.00 Zl - 4 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Temperature Compensation Biasing Circuit 3V 3V C3 Base Bias IN C1 C2 OUT U3 ADJ R1 3V + C4 C6 VS VO C7 U2 C5 - U1 R6 R2 R4 GND Jumper R3 R5 R7 Bill of Material Reference C1, C2, C3 C4, C5 C6, C7 R1, R2 R3 R4 R5, R6 R7 U1 U2 U3 Value 10uF 1uF 8.2 pF 5k 20k 392 15k 3.3k Description Capacitor, 1206, 25V Capacitor, 1206, 25V Capacitor, 0603 SMD, 250V Potentiometer Potentiometer Resistor, 1206, 1/4W, 5% Resistor, 1206, 1/4W, 5% Resistor, 1206, 1/4W, 5% LM60BIM3CTND Temperature Sensor Operational Amplifier Voltage Regulator TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 5 of 10 - Manufacturer Panasonic-ECG Panasonic - ECG AVX Corp. Copal Electronics Inc. Copal Electronics Inc. Rohm Semiconductor Panasonic - ECG Rohm Semiconductor National Semiconductor Linear Technology Linear Technology Part Number ECJ-3YB1E106M ECJ-3YB1E105K SQCSVA8R2CAT1A ST5ETW502 ST5ETW203 MCR18EZHF3920 ERJ-8GEYJ153V MCR18EZHF3301 LM60BIM3/NOPB LT6220CS5#TRMPBF LT3021ES8#PBF Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TG2H214120 2140MHz 120W WCDMA Power Amplifier Bias Guidelines Base (Input) Bias Use a +3.0V supply. Ensure the power supply voltage sense is used to maintain a solid +3.00V at the EVB for all RF drive levels. Maximum base current demand is approximately 200mA at 52dBm CW output power. Jumper Bias the amplifier at 550mA. To operate the temperature compensation bias circuit, follow the steps below: 1. Ensure +3.0 VDC is applied to the input bias circuits. 2. Remove jumper and adjust R2 for 200 mV at Node A at 25C. 3. Re-install jumper. 4. Adjust R1 at 25C for Icq 550 mA Node B: typ. 1.26 V, 25C. 5. Adjust R3 at 100C for Icq 550 mA Node B: typ. 1.17 V, 100C. Node A R5 R7 U3 C1 R3 R6 R4 C3 R1 R2 U2 C2 C C6 Temperature compensation can be bypassed by simply removing the jumper and adjusting R1 for the quiescent point of interest. C16 C14 C12 C10 C17 Node B Thermal Coefficient= -1.21mV/C Conditions: Constant Icq of 600mA across temperature. Vbe versus Temperature Icq=600mA 1.36 1.34 1.32 Vbe (V) 1.3 1.28 1.26 1.24 1.22 1.2 1.18 1.16 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 Temperature (C) Collector (Output) Bias Use +28V supply for collector bias. Ensure the power supply voltage sense is used to maintain a solid +28.00V at the EVB for all RF drive levels. Collector current demand is approximately 8.5A at 52 dBm CW output power. TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 6 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TG2H214120 2140MHz 120W WCDMA Power Amplifier Single Ended Class AB Test Fixture Schematic Base Bias T25 C16 C14 T9 C12 C17 T16 C8 T5 C20 28V C10 C21 T8 Input T6 T17 T4 T3 T13 T14 T21 T22 T23 T24 T25 Output T1 C29 TG2H214120 C28 T18 C9 C22 T10 T19 T20 T11 C18 C26 T15 T7 T2 C24 C23 C25 C27 T26 T12 C15 C19 C13 C11 PCB: 20mil Rogers 4350B, Er = 3.66, Loss Tangent = 0.004 All dimensions in mils (W x L) T1, T13: 682 x 25 T2, T14: 682 x 130 (Cross) T3: 682 x 195 T4: 172 x 575 T5: 45 x 100 T6: 45 x 1115 T7, T8, T10, T11: 122.5 x 130 T9, T12, T16, T19: 130 x 90 (Bend, Miter = 0.52) T15, T18: 130 x 245 T17, T20, T25, T26: 130 x 400 T21: 682 x 442.5 T22: 55 x 244 T23: 270 x 178 T24: 45 x 100 T25: 45 x 755.5 Bill of Material Reference Value Description C8, C9 C10, C11 C12, C13 C14, C15 C16 - C23 C24, C25 C26, C27 C28, C29 1000pF 0.01uF 10uF 220uF 8.2pF 1uF 220uF 33pF Capacitor, 1206, 630V Capacitor, 1206, 630V Capacitor, 1206, 25V Capacitor, 16V Capacitor Capacitor , low ESL / ESR Capacitor, 50V Capacitor, 250V TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. Manufacturer Murata Elect. North America Murata Elect. North America Panasonic - ECG Nichicon ATC ATC Nichicon ATC - 7 of 10 - Part Number GRM31BR72J102KW01L GRM31BR72J103KW01L ECJ-3YB1E106M UUD1C221MCL1GS 100B8R2CW 500 X 920C105KW 100 T UUD1H221MNL1GS 600F330FW250X Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Class AB Single Ended Test Fixture PCB Layout R5 R7 U3 C1 R3 R6 R4 C3 R1 R2 U2 C2 C5 C4 C6 C16 C17 U1 C14 C12 C10 C7 C20 C24 C26 C21 C8 C28 C29 C18 C19 C9 C22 C15 C13 C11 C23 C25 C27 PCB: Rogers 4350B, 0.020", Er=3.66, Loss Tangent=0.004 TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 8 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Mechanical Information Notes: 1. Unless specified otherwise, dimensions are in millimeters 2. Unless specified otherwise, tolerances are 0.127 TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 9 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r TG2H214120 2140MHz 120W WCDMA Power Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Class 1A Passes 350 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level 1 at +260 C convection reflow The part is rated Moisture Sensitivity Level1 at 260C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: Info-tripower@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. TG2H214120 Datasheet: Rev D 12/15/2010 (c) 2010 TriQuint Semiconductor, Inc. - 10 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)r