VS-SD603C..C Series
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Fast Recovery Diodes
(Hockey PUK Version), 600 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2200 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® B-43
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 600 A
Package B-43
Circuit configuration Single
B-43
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VS-SD603C..C UNITS
S10 S15 S20
IF(AV)
600 600 600 A
Ths 55 55 55 °C
IF(RMS)
942 942 942 A
Ths 25 25 25 °C
IFSM
50 Hz 8320 8320 8320 A
60 Hz 8715 8715 8715
I2t50 Hz 346 346 346 kA2s
60 Hz 316 316 316
VRRM Range 400 to 1000 1200 to 1600 2000 to 2200 V
trr
1.0 1.5 2.0 μs
TJ25 25 25 °C
TJ-40 to +125 -40 to +125 -40 to +125
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
VS-SD603C..S10C
04 400 500
45
08 800 900
10 1000 1100
VS-SD603C..S15C
12 1200 1300
14 1400 1500
16 1600 1700
VS-SD603C..S20C 20 2000 2100
22 2200 2300
VS-SD603C..C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
600 (300) A
55 (75) °C
Maximum RMS current IF(RMS) 25 °C heatsink temperature double side cooled 942
A
Maximum peak, one-cycle
non-repetitive forward current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
8320
t = 8.3 ms 8715
t = 10 ms 100 % VRRM
reapplied
7000
t = 8.3 ms 7330
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
346
kA2s
t = 8.3 ms 316
t = 10 ms 100 % VRRM
reapplied
245
t = 8.3 ms 224
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3460 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.36 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.81
Low level of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.87 mW
High level of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.67
Maximum forward voltage drop VFM Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.97 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(μs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
S10 1.0
1000 25 -30
2.0 45 34
S15 1.5 3.2 87 51
S20 2.0 3.5 97 55
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.076 K/W
DC operation double side cooled 0.038
Mounting force, ± 10 % 9800 (1000) N (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet B-43
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.006 0.007 0.005 0.005
TJ = TJ maximum K/W
120° 0.008 0.008 0.008 0.008
90° 0.010 0.010 0.011 0.011
60° 0.015 0.015 0.016 0.015
30° 0.026 0.025 0.026 0.025
IFM trr
dir
dt
IRM(REC)
Qrr
t
VS-SD603C..C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
30° 60° 90°
120°
180°
Averag e Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 6 0 3 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ-hs
60
70
80
90
100
110
120
130
0 100 200 300 400 500
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD 6 0 3 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.076 K/ W
thJ-hs
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30° 60° 90° 120° 180°
Averag e Forwa rd Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 6 0 3 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30° 60° 90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD603C..C Se ries
(Double Side Cooled)
R (DC) = 0.038 K/ W
thJ-hs
0
200
400
600
800
1000
1200
1400
1600
1800
0 100200300400500600
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m i t
SD603C..C Series
T = 125°C
J
Conduction Angle
0
500
1000
1500
2000
2500
0 200 400 600 800 1000
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
SD 6 0 3 C . . C Se r i e s
T = 125°C
J
Conduction Period
VS-SD603C..C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Pe a k Ha lf Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD603C..C Series
At Any Rated Load Condition and With
Rated V App lied Following Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Pulse Train Duration (s)
Pe a k Ha lf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
SD 6 0 3 C . . C Se r i e s
Init ia l T = 125 °C
No Volt a g e Re a pp lie d
Rated V Reapplied
J
RRM
10
100
1000
10000
.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5
Instantaneous Forward Voltage (V)
Inst a nta neous Forwa rd Current (A)
T = 2 5 ° C
J
T = 125 °C
J
SD603C..C Se rie s
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Transient Thermal Imped ance Z (K/ W)
St e a d y St a t e V a l u e :
R = 0.076 K/ W
(Single Side Cooled)
R = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
SD 6 0 3 C . . C Se r i e s
0
20
40
60
80
100
0 200 400 600 800 100012001400160018002000
Forward Recovery (V)
T = 1 2 5° C
T = 2 5 ° C
J
J
Ra t e O f f Ri se O f Fo rw a r d C u r r e n t d i/ d t ( A / u se c )
SD 6 0 3 C . . S2 0 C Se r i e s
I
V
FP
VS-SD603C..C Series
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Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
1.6
1.7
1.8
1.9
2
2.1
2.2
00101
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
M a xi m u m Re v e r se Re c o v e r y Ti m e - Trr ( µ s)
I = 1000 A
Sq u a r e P u l se
500 A
250 A
FM
SD603C..S10C Series
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a x im u m Re v e rse Re c o v e ry C h a r g e - Q r r ( µ C )
Ra t e O f Fa l l O f Fo rw a rd C u rre n t - d i / d t ( A / µ s)
I = 1000 A
Sq u a r e P u l se
FM
500 A
250 A
SD 6 0 3 C . . S1 0 C Se r i e s
T = 125 °C; V = 30V
r
J
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Ra t e O f Fa l l O f Fo r w a r d C urr e n t - d i / d t ( A / µs)
I = 1000 A
Sq u a r e Pu l se
FM
500 A
250 A
SD 6 0 3 C . . S1 0 C Se r i e s
T = 1 2 5 ° C ; V = 3 0 V
r
J
2
2.5
3
3.5
4
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reve rse Rec overy Time - Trr (µs)
I = 1000 A
Sq u a r e Pu l se
FM
500 A
250 A
SD603C..S15C Series
T = 125 °C; V = 30V
r
J
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e P u l se
FM
500 A
250 A
SD 6 0 3 C . . S1 5 C Se r i e s
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e Pu l se
FM
500 A
250 A
SD 6 0 3 C . . S1 5 C Series
T = 125 °C; V = 30V
r
J
VS-SD603C..C Series
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Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
2
2.5
3
3.5
4
4.5
00101
Ra t e O f Fa ll O f Fo r w a r d C u r r e n t - d i / d t ( A / µ s)
Maximum Reverse Recovery Time - Trr (µs)
I = 1000 A
Sq u a r e P u l se
500 A
250 A
FM
SD603C..S20C Series
T = 125 °C; V = 30V
r
J
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
Ma ximum Reverse Rec overy Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Sq u a r e P u l se
500 A
250 A
FM
SD 6 0 3 C . . S2 0 C Se r i e s
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
150
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Sq u a r e P u l s e
FM
500 A
250 A
SD 6 0 3 C . . S2 0 C Se r i e s
T = 125 °C ; V = 30V
r
J
1E1
1E2
1E3
1E4
12
0.1
Pu lse Ba se w i d t h ( µ s)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD603C..S10C Series
T = 1 2 5 ° C , V = 1 1 2 0 V
J
RRM
tp
1E11E21E31E4
1E11E21E31E4
1
2
0.1
Pu lse Ba se w id t h ( µs)
4
20 joules per pulse
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD603C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
VS-SD603C..C Series
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Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95249
1E1
1E2
1E3
1E4
1
2
0.1
Pu lse Ba se w id t h ( µ s)
Pea k Fo rw ard C urre n t (A)
4
dv/dt = 1000V/µs
Si n u so i d a l Pu l se
20 joules per pulse
10
0.4
0.2
0.04
0.02
SD 6 0 3 C . . S1 5 C Se r i e s
T = 1 2 5 ° C , V = 1 7 6 0 V
J
RRM
tp
1E11E21E31E4
1E1 1 E2 1 E3 1 E4
1
2
Pulse Ba se w id t h (µ s)
4
20 joules per pulse
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD603C ..S15C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pu l se Ba se w i d t h ( µ s)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoidal Pulse
20 joules per pulse
10
0.4
0.2
0.04
SD 6 0 3 C . . S20C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1 1E2 1E3 1E4
1
2
Pulse Ba sew id t h ( µs)
4
20 joule s pe r p ulse
10
0.4
Trapezoidal Pulse
dv/dt = 1000V/ µs; di/d t=50A/µs
T = 125°C , V = 1760V
SD 6 0 3 C . . S2 0 C Se r i e s
J
RRM
tp
1
- Diode
2
- Essential part number
3
- 3 = fast recovery
4
- C = ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
-t
rr
code (see Recovery Characteristics table)
7
8
- C = PUK case B-43
Device code
51 32 4 6 7 8
SDVS- 60 3 C 22 S20 C
- Vishay Semiconductors product
Outline Dimensions
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B-43
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
40.5 (1.59) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
14.4 (0.57)
15.4 (0.61)
C
ANote:
A = Anode
C = Cathode
Legal Disclaimer Notice
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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