devices SCOTS Ui] SEMICONDUCTORS _EC_=stscrete Semitronics Corp. , - silicon transistors ' 4o- ~O UHF/VHF power transistors 37- O/ NPN type . Power Out e Gower out * TRated Breakdown e e Rated Breakdown Voltages Vo, fe Pe Po | fog we, Voltages Vo fe Pe Pol Cog wha : vVoVvL Vv iMez) OW) ow) | tpt) (Min. Case Vee Ye Yew (MHz Whi tpt) Min, Case Bea.) ce ce es 2 9N9895765 40 4.0 | 28 400 1.03.0 | 120 800 Typ 10-80 70 35) 4.0 | 24 70.635 6200 | 85.0 200 70-60 22N3553765 40 40 | 28 175) 12525 1120 350 105 65 30 40 | 28 400 50 1501250 S00 T0-80 PAN3692165 40 4.0 | 28 176 35 8 8=6135 [250 260 T0-60 65 30 40 | 28 30,0625) -12.5 | 85 100 T0-60 p@N37GS] 65 404.0 | 28 = 400 40100 1250 280 70-60 6 30 40 24 70 3.0 = 28.0 | 85 199 T0-60 _ - F308, . 35 10 :2Nseeg/85 30 35 | 28 400 01 10130 oo T05 384.2% 4000.2 12 60 :2N9028136 18 64.0 1136 175 10 8 64'0 {200 280 T05 30035 128 440 02 121 35 500 70-60 ; 2002836 18 40 1 1368 175. 20 = 70 1200 280 0-60 30.3.0 | 28 100031610 | 3.0 1200 T05 2N9027/36 18 4.0 | 136 175 40 120 | 45.0 290 70-60 2030 | 28 100 32 101 35 i200 105 rneoia/65 40 4.0 | 136 1000 1.0 28/100 380 T0-60 18 40 1135 175 125 401 5.0 300 10-5 18 40 1135 178 125 01250 300 70-60 ;eNaGad 160 40 40 1 28 400 30 =) 80 115.0 ano MT-72] ;2NeDeEy60 40 4.0 | 28 400 10S 33 | Bo ane MT-72j 18 4.0 1135 175 41 130] 45.0 280 70-60 40 40/25 175 25 435 |250 300 MT-72} 18 40 1136 175 95 25.0 11200 200 MT-72 40 40/25 175 60 2401450 200 MT-72] 0 28641. 34.0) 28 #61795 10 0== 7.0 | 180 300 MT-71 2 20 112 175 On 10} 40 500 T05 2N56G2 165 350 40 | 28175 28) 0 350 so MT-72e EPNSGRE 65 354.0 | 28175804001 65.0 200 MT-72e 3536 | 28 6500 07575] 35 200 105 = 350635 | 28 1000 3.2500 ] 35 700 MT-72} 18 40 1136 100 4 | 20 200 MT-72h 40 35/28 100 067F)06625 | 50 Gon MT-66 1% 40 [136 100 15 | 85 200 MT-72h 40 35 | 28 1000 195 8 01/100 600 MT-66 18 40 1436 100 25 (130 200 MT-72h 40 40 | 2 400 1.7 = 5.01120 sootyp Toso 18 40 [136 100 30 1130 200 MT-72h 78 40 1136 100 40 {200 200 MT-72h germanium transistors diffused-base MESA transistors ultra-high-speed switching BVCBO BVCES Typ.Gain fob Vat - Polarity Afax. Volts fax. Volts HFE Avg.mc Avg.Volts Case PNP 15 15 25 300 0.325 =60-18 BVCBO BVCES Typ.Gain tab Vist Polarity Max. Volts Max. Volts HFE = Avg.me Avg.Volts Case PNP 12 12 40 460 0.125 = =TO-18 PNP -45 15 40 - 0425 T0-18 PNP 12 40 460* 18 PNP -15 ~15 25 300 0.125 TO418 PNP 15 15 20 320" O48 To18 PNP -15 15 70 - 0.125 T0-18 PNP 12 12 7 320" 08 = T0-18 12 -12 80 300-0125 T0.18 PNP 12 12 20 3207 048 = T0418 ~15 14 80 = 0425 70-18 PNP 7 7 200320" -018 TOE 18 5 80 320* 0.18 TO-18 PNP 15 15 40 320 018 = TO-48 12 -12 20 - 0125-70-18 PNP- 12 12 40 320" 018 = T0-18 20 ? 40 600 605) = T0418 PNP 12 12 40 320" 018 = TO48 15 -15 25 - 0.425 T0418 PNP ? 7 40 320" 018 = T0418 12 12 30 - 0.18 TO-48 PNP 15 - 40 - 010 To-48 2 M 30 inno 03 Tote PNP 15 15 a5 - DB TO-18 2 i 30 as gas PNP 25 25 10 500 04 = TO.102 . 18 PNP 25 25 450 04 = TO-102 12 12 20 460" 0.125 T0-18 PNP 40 40 80 60 TO1 12 12 20 460 0.125 = T0-18 : 12 12 20 460 018 TO-18 Hig Ba 0 HH . ot 15 15 60 4c0" 0.125 T0-18 PNP 60 60 80 20 OA 15 5 60 ~ O10 = 10-18 NPN 20 12 15 6002. T0-18 12 2 40460" 0125 10-1860 JEMICUN SEMICONDUCTORS Semitronics Corp. case outline drawings INTEX/ SEMITRONICS CORP discrete devices 7 - F/O a me (ee, ane van, . ~1m ue. ae La paseae une pete ie aa ea | ie pi fete ieee PTE ite] [eet P| tn | quia HiteT 1| S| semitron not line TOLL FREE NUMBER 800-777-3960 case outline drawings conta discrete devices T-9l- a0 , oe 61