FGD3N60LSD tm IGBT Features Description * High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. * Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A * High Input Impedance Applications * HID Lamp Applications * Piezo Fuel Injection Applications C C G G D-PAK E E Absolute Maximum Ratings Symbol Description FGD3N60LSD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage 25 V IC Collector Current @ TC = 25C 6 A Collector Current @ TC = 100C 3 A 25 A 3 A ICM (1) Pulsed Collector Current IF Diode Continous Forward Current I FM Diode Maximum Forward Current PD Maximum Power Dissipation (1) @ TC = 100C @ TC = 25C Derating Factor 25 A 40 W 0.32 W/C TJ Operating Junction Temperature -55 to +150 C Tstg Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds 250 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC (IGBT) RJA Typ. Max. Units Thermal Resistance, Junction-to-Case Parameter -- 3.1 C/W Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) -- 100 C/W Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material) (c)2006 Fairchild Semiconductor Corporation FGD3N60LSD Rev. B 1 www.fairchildsemi.com FGD3N60LSD IGBT September 2006 Device Marking Device Package Reel Size Tape Width Quantity FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V BVCES/ TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 100 nA 2.5 3.2 5.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 3mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 3A, VGE = 10V -- 1.2 1.5 V IC = 6A, VGE = 10V -- 1.8 -- V -- 185 -- pF -- 20 -- pF -- 5.5 -- pF -- 40 -- ns -- 40 -- ns -- 600 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 25V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time -- 600 -- ns Eon Turn-On Switching Loss -- 250 -- uJ Eoff Turn-Off Switching Loss -- 1.00 -- mJ Ets Total Switching Loss -- 1.25 -- mJ td(on) Turn-On Delay Time -- 40 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 620 -- ns tf Fall Time -- 800 -- ns Eon Turn-On Switching Loss -- 300 -- uJ Eoff Turn-Off Switching Loss -- 1.9 -- mJ Ets Total Switching Loss -- 2.2 -- mJ Qg Total Gate Charge -- 12.5 -- nC Qge Gate-Emitter Charge -- 2.8 -- nC Qgc Gate-Collector Charge -- 4.9 -- nC Le Internal Emitter Inductance -- 7.5 -- nH FGD3N60LSD Rev. B VCC = 480 V, IC = 3A, RG = 470, VGE = 10V, Inductive Load, TC = 25C VCC = 480 V, IC = 3A, RG = 470, VGE = 10V, Inductive Load, TC = 125C VCE = 480 V, IC = 3A, VGE = 10V Measured 5mm from PKG 2 www.fairchildsemi.com FGD3N60LSD IGBT Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Test Conditions IF = 3A IF = 3A, di/dt = 100A/us VR = 200V Diode Reverse Recovery Charge FGD3N60LSD Rev. B 3 Min. Typ. Max. Units V TC = 25C -- 1.5 1.9 TC = 100C -- 1.55 -- TC = 25C -- 234 -- TC = 100C -- -- -- TC = 25C -- 2.64 -- TC = 100C -- -- -- TC = 25C -- 309 -- TC = 100C -- -- -- ns A nC www.fairchildsemi.com FGD3N60LSD IGBT Electrical Characteristics of DIODE T FGD3N60LSD IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 Figure 2. Typical Output Characteristics 30 Common Emitter T C = 25 C 20V Common Emitter TC = 125C 15V Collector Current, IC [A] Collector Current, IC [A] 24 10V 18 V GE = 8V 12 6 20V 24 15V 18 10V VGE = 8V 12 6 0 0 2 4 6 8 0 0 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Output Characteristics 10 T C = 25 C Collector Current, IC [A] Collector Current, IC [A] Common Emitter V GE = 10V T C = 125 C 6 4 2 8 Common Emitter V CE = 20V T C = 25 C T C = 125 C 6 4 2 0 0 0.1 1 10 1 Figure 5. Saturation Voltage vs. Case 3 Figure 6. Capacitance Characteristics 600 Comm on Emitter V GE = 10V Com m on Em itter V GE = 0V, f = 1MHz T C = 25 C Capacitance [pF] 500 2 IC = 6A IC = 3A 1 10 Gate-Emitter Voltage, V GE[V] Collector-Emitter Voltage, V CE[V] Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 10 8 2 4 6 Collector-Emitter Voltage, VCE [V] IC = 1.5A 400 Cies 300 Coes 200 Cres 100 0 0 0 30 60 90 120 150 1 Case Temperature, T C [ C] FGD3N60LSD Rev. B 10 Collector - Emitter Voltage, V CE [V] 4 www.fairchildsemi.com (Continued) Figure 7. Gate Charge Figure 8. Turn-On Characteristics vs. Gate Resistance 12 1000 Com m on Em itter R L = 160 IC = 3 A Switching Time [ns] Gate - Emitter Voltage, VGE [V] C o m m o n E m itte r V CC = 4 8 0 V , V GE = 1 0 V Vcc = 480V T C = 25 C 10 FGD3N60LSD IGBT Typical Performance Characteristics 8 6 4 T C = 25C T C = 125C T on 100 Tr 2 0 0 2 4 6 8 10 10 12 200 400 600 800 1000 G ate R esistance, R G [ ] Gate Charge, Q g [nC] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 10000 10000 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A Eoff Switching Loss [J] Switching Time [ns] T C = 25 C T C = 125 C Toff 1000 Tf 1000 Eon 100 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A T C = 25 C 100 200 400 600 T C = 125 C 10 800 1000 200 400 Gate Resistance, R G [ ] Gate Resistance, R G [ ] Figure 11. Turn-On Characteristics vs. Collector Current 600 800 1000 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter Vcc = 480V, V GE = 10V RG = 470 100 1000 T C = 125 C Toff Switching Time [ns] Switching Time [ns] T C = 25 C Ton Tr Tf Common Emitter Vcc = 480 V, VGE = 10V RG = 470 T C = 25 C T C = 125 C 10 2 FGD3N60LSD Rev. B 3 Collector Current, IC [A] 100 4 2 5 3 Collector Current, IC [A] 4 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Forward Characteristics 100 Tc = 25C Tc = 100C Common Emitter Vcc = 480 V, VGE = 10V RG = 470 TC = 25C Forward Current, IF [A] Switching Loss [J] TC = 125C Eoff 1000 Eon 10 1 100 0.1 2 3 Collector Current, IC [A] 0 4 1 2 3 4 Forward Voltage Drop, VF [V] Figure 15. Forward Voltage Drop Vs Tj Figure 16. SOA Characteristics 100 2.8 2.4 Collector Current, Ic [A] Forward Voltage Drop, VF [V] Ic MAX (Pulsed) IF=6 A 2.0 1.6 IF=3 A 50s 10 1ms 1 DC Operation Single Nonrepetitive Pulse Tc = 25C Curves must be derated linearly with increase in temperature 0.1 IF=1.5 A 1.2 100s Ic MAX (Continuous) 0.01 25 50 75 100 125 0.1 Junction Temperature, Tj [C] 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 0 .5 1 0 .2 0 .1 0 .0 5 0 .1 0 .0 2 Pdm s in g le p u ls e t1 0 .0 1 t2 0 .0 1 1 E -5 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta ngula r P uls e D ura tio n [s e c ] FGD3N60LSD Rev. B 6 www.fairchildsemi.com FGD3N60LSD IGBT Mechanical Dimensions D-PAK Dimensions in Millimeters FGD3N60LSD Rev. B 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM OPTOLOGIC(R) GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM CROSSVOLTTM SuperSOTTM-3 POPTM i-LoTM DOMETM SuperSOTTM-6 Power247TM ImpliedDisconnectTM EcoSPARKTM SuperSOTTM-8 PowerEdgeTM IntelliMAXTM E2CMOSTM SyncFETTM PowerSaverTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM Across the board. Around the world.TM TruTranslationTM ScalarPumpTM The Power Franchise(R) UHCTM Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FGD3N60LSD Rev. B 8 www.fairchildsemi.com FGD3N60LSD IGBT TRADEMARKS