HFA3127BZ96 - Intersil Corporation

FN3076.13

HFA3046, HFA3096, HFA3127, HFA3128

Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are

Ultra High Frequency Transistor Arrays that are fabricated

from Intersil Corporation’s complementary bipolar UHF-1

process. Each array consists of five dielectrically isolated

transistors on a common monolithic substrate. The NPN

transistors exhibit a fT of 8GHz while the PNP transistors

provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB),

making them ideal for high frequency amplifier and mixer

applications.

The HFA3046 and HFA3127 are all NPN arrays while the

HFA3128 has all PNP transistors. The HFA3096 is an

NPN-PNP combination. Access is provided to each of the

terminals for the individual transistors for maximum

application flexibility. Monolithic construction of these

transistor arrays provides close electrical and thermal

matching of the five transistors.

Intersil provides an Application Note illustrating the use of

these devices as RF amplifiers. For more information, visit

our website at www.intersil.com.

Features

• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz

• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130

• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V

• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz

• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60

• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB

• Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA

• Complete Isolation Between Transistors

• Pin Compatible with Industry Standard 3XXX Series

Arrays

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• VHF/UHF Amplifiers

•VHF/UHF Mixers

• IF Converters

• Synchronous Detectors

Ordering Information

PART NUMBER* PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. #

HFA3046B HFA3046B -55 to 125 14 Ld SOIC M14.15

HFA3046BZ (Note) HFA3046BZ -55 to 125 14 Ld SOIC (Pb-free) M14.15

HFA3096B HFA3096B -55 to 125 16 Ld SOIC M16.15

HFA3096BZ (Note) HFA3096BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3127B HFA3127B -55 to 125 16 Ld SOIC M16.15

HFA3127BZ (Note) HFA3127BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3127R 127 -55 to 125 16 Ld 3x3 QFN L16.3x3

HFA3127RZ (Note) 127Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3

HFA3128B HFA3128B -55 to 125 16 Ld SOIC M16.15

HFA3128BZ (Note) HFA3128BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3128R 128 -55 to 125 16 Ld 3x3 QFN L16.3x3

HFA3128RZ (Note) 128Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3

*Add “96” suffix for tape and reel.

NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate

termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL

classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

Data Sheet

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

December 21, 2005

2FN3076.13

December 21, 2005

Pinouts

HFA3046

TOP VIEW

HFA3096

TOP VIEW

HFA3127

TOP VIEW

HFA3128

TOP VIEW

HFA3127, HFA3128

TOP VIEW

Q514

Q3Q4

Q2E

Q2B

Q3C

Q2C

Q1C

Q1E

Q1B

16 14 13

6578

Q5B

Q5E

Q5C

Q4C

Q3E

Q3B

Q4B

Q4E

HFA3046, HFA3096, HFA3127, HFA3128

3FN3076.13

December 21, 2005

Absolute Maximum Ratings Thermal Information

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V

Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C

34mA at TJ = 125°C

37mA at TJ = 110°C

Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA

Operating Information

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C

Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W)

14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A

16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A

QFN Package (Notes 2, 3). . . . . . . . . . 57 10

Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C

Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

Electrical Specifications TA = 25°C

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

DC NPN CHARACTERISTICS

Collector to Base Breakdown

Voltage, V(BR)CBO

IC = 100µA, IE = 0 12 18 - 12 18 - V

Collector to Emitter Breakdown

Voltage, V(BR)CEO

IC = 100µA, IB = 0 8 12 - 8 12 - V

Collector to Emitter Breakdown

Voltage, V(BR)CES

IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V

Emitter to Base Breakdown

Voltage, V(BR)EBO

IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V

Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA

Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA

Collector to Emitter Saturation

Voltage, VCE(SAT)

IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V

Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V

DC Forward-Current Transfer

Ratio, hFE

IC = 10mA, VCE = 2V 40 130 - 40 130 -

Early Voltage, VAIC = 1mA, VCE = 3.5V 20 50 - 20 50 - V

Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/°C

Collector to Collector Leakage - 1 - - 1 - pA

Electrical Specifications TA = 25°C

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

DYNAMIC NPN CHARACTERISTICS

Noise Figure f = 1.0GHz, VCE = 5V,

IC = 5mA, ZS = 50Ω

- 3.5 - - 3.5 - dB

fT Current Gain-Bandwidth

Product

IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz

IC = 10mA, VCE = 5V - 8 - - 8 - GHz

HFA3046, HFA3096, HFA3127, HFA3128

4FN3076.13

December 21, 2005

Power Gain-Bandwidth Product,

fMAX

IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz

Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF

Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF

Electrical Specifications TA = 25°C (Continued)

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

Electrical Specifications TA = 25°C

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

DC PNP CHARACTERISTICS

Collector to Base Breakdown

Voltage, V(BR)CBO

IC = -100µA, IE = 0 10 15 - 10 15 - V

Collector to Emitter Breakdown

Voltage, V(BR)CEO

IC = -100µA, IB = 0 8 15 - 8 15 - V

Collector to Emitter Breakdown

Voltage, V(BR)CES

IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V

Emitter to Base Breakdown

Voltage, V(BR)EBO

IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V

Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA

Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA

Collector to Emitter Saturation

Voltage, VCE(SAT)

IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V

Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V

DC Forward-Current Transfer

Ratio, hFE

IC = -10mA, VCE = -2V 20 60 - 20 60 -

Early Voltage, VAIC = -1mA, VCE = -3.5V 10 20 - 10 20 - V

Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/°C

Collector to Collector Leakage - 1 - - 1 - pA

Electrical Specifications TA = 25°C

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

DYNAMIC PNP CHARACTERISTICS

Noise Figure f = 1.0GHz, VCE = -5V,

IC = -5mA, ZS = 50Ω

- 3.5 - - 3.5 - dB

fT Current Gain-Bandwidth

Product

IC = -1mA, VCE = -5V - 2 - - 2 - GHz

IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz

Power Gain-Bandwidth

Product

IC = -10mA, VCE = -5V - 3 - - 2 - GHz

Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF

Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF

HFA3046, HFA3096, HFA3127, HFA3128

5FN3076.13

December 21, 2005

DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046

Input Offset Voltage IC = 10mA, VCE = 5V - 1.5 5.0 - 1.5 5.0 mV

Input Offset Current IC = 10mA, VCE = 5V - 5 25 - 5 25 µA

Input Offset Voltage TC IC = 10mA, VCE = 5V - 0.5 - - 0.5 - µV/°C

S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.

Electrical Specifications TA = 25°C (Continued)

PARAMETER TEST CONDITIONS

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor

FREQ. (Hz) |S11| PHASE(S11)|S

21| PHASE(S21)|S

12| PHASE(S12)|S

22|PHASE(S

22)

VCE = 5V and IC = 5mA

1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05

2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35

3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44

4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16

5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59

6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93

7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37

8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10

9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25

1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96

1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31

1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37

1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19

1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83

1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31

1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66

1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90

1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05

1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12

2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13

2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09

2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99

2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85

2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68

2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47

2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23

2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97

2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68

2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37

3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05

HFA3046, HFA3096, HFA3127, HFA3128

6FN3076.13

December 21, 2005

VCE = 5V and IC = 10mA

1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26

2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95

3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31

4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45

5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77

6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72

7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65

8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85

9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49

1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71

1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62

1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28

1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76

1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08

1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28

1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38

1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41

1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37

1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27

2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13

2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95

2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74

2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50

2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24

2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95

2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64

2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32

2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98

2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62

3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25

Common Emitter S-Parameters of PNP 3µm x 50 µm Transistor

FREQ. (Hz) |S11| PHASE(S11)|S

21| PHASE(S21)|S

12| PHASE(S12)|S

22|PHASE(S

22)

VCE = -5V and IC = -5mA

1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76

2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38

3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25

4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31

5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81

Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor (Continued)

FREQ. (Hz) |S11| PHASE(S11)|S

21| PHASE(S21)|S

12| PHASE(S12)|S

22|PHASE(S

22)

HFA3046, HFA3096, HFA3127, HFA3128

7FN3076.13

December 21, 2005

6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10

7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47

8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15

9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33

1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15

1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69

1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05

1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26

1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38

1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43

1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44

1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43

1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40

1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38

2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36

2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35

2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35

2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38

2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42

2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49

2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56

2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67

2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81

2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96

3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13

VCE = -5V, IC = -10mA

1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46

2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76

3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10

4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83

5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63

6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07

7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60

8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49

9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97

1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18

1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20

1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11

Common Emitter S-Parameters of PNP 3µm x 50 µm Transistor (Continued)

FREQ. (Hz) |S11| PHASE(S11)|S

21| PHASE(S21)|S

12| PHASE(S12)|S

22|PHASE(S

22)

HFA3046, HFA3096, HFA3127, HFA3128

8FN3076.13

December 21, 2005

1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95

1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77

1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58

1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39

1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23

1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09

1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98

2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91

2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87

2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87

2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90

2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97

2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07

2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18

2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34

2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55

2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76

3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00

Common Emitter S-Parameters of PNP 3µm x 50 µm Transistor (Continued)

FREQ. (Hz) |S11| PHASE(S11)|S

21| PHASE(S21)|S

12| PHASE(S12)|S

22|PHASE(S

22)

Typical Performance Curves

FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO

EMITTER VOLTAGE

FIGURE 2. NPN COLLECTOR CURRENT AND BASE

CURRENT vs BASE TO EMITTER VOLTAGE

IB = 200µA

COLLECTOR TO EMITTER VOLTAGE (V)

IB = 160µA

IB =120µA

IB = 80µA

IB = 40µA

12345

COLLECTOR CURRENT (mA)

BASE TO EMITTER VOLTAGE (V)

VCE = 3V

0.60.70.80.91.0

100m

10m

100µ

COLLECTOR CURRENT

0.5

10µ

1µ

100n

10n

AND BASE CURRENT (A)

HFA3046, HFA3096, HFA3127, HFA3128

9FN3076.13

December 21, 2005

FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR

CURRENT (UHF 3 x 50 WITH BOND PADS)

FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO

EMITTER VOLTAGE

FIGURE 6. PNP COLLECTOR CURRENT AND BASE

CURRENT vs BASE TO EMITTER VOLTAGE

FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR

CURRENT

FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR

CURRENT (UHF 3 x 50 WITH BOND PADS)

Typical Performance Curves (Continued)

COLLECTOR CURRENT (A)

VCE = 3V

160

140

120

DC CURRENT GAIN

1µ

100

10µ100µ1m 10m 100m

COLLECTOR CURRENT (mA)

VCE = 1V

1.0 10 100

10.0

8.0

6.0

GAIN BANDWIDTH PRODUCT (GHz)

0.1

VCE = 5V

VCE = 3V

4.0

2.0

IB = -400µA

COLLECTOR TO EMITTER VOLTAGE (V)

IB = -80µA

-1 -2 -3 -4 -5

-25

-20

-15

-10

-5

COLLECTOR CURRENT (mA)

IB = -320µA

IB = -240µA

IB = -160µA

BASE TO EMITTER VOLTAGE (V)

VCE = -3V

-0.6 -0.7 -0.8 -0.9 -1.0

-100m

-10m

-1m

-100µ

COLLECTOR CURRENT

-0.5

-10µ

-1µ

-100n

-10n

-1n

AND BASE CURRENT (A)

COLLECTOR CURRENT (A)

160

140

120

DC CURRENT GAIN

-1µ

100

-10µ-100µ-1m -10m -100m

VCE = -3V

COLLECTOR CURRENT (mA)

VCE = -5V

5.0

GAIN BANDWIDTH PRODUCT (GHz)

4.0

3.0

2.0

1.0

-0.1 -1.0 -10 -100

VCE = -3V

VCE = -1V

HFA3046, HFA3096, HFA3127, HFA3128

10 FN3076.13

December 21, 2005

Die Characteristics

DIE DIMENSIONS:

53 mils x 52 mils x 19 mils

1340µm x 1320µm x 483µm

METALLIZATION:

Type: Metal 1: AlCu(2%)/TiW

Thickness: Metal 1: 8kÅ ±0.4kÅ

Type: Metal 2: AlCu(2%)

Thickness: Metal 2: 16kÅ ±0.8kÅ

PASSIVATION:

Type: Nitride

Thickness: 4kÅ ±0.5kÅ

PROCESS:

UHF-1

SUBSTRATE POTENTIAL: (POWERED UP)

Unbiased

Metallization Mask Layout

HFA3096, HFA3127, HFA3128

HFA3046

Pad numbers correspond to SOIC pinout.

78 910

1516

1320µm

(52 mils)

1340µm

(53 mils)

78 9

1314

1320µm

(52 mils)

1340µm

(53 mils)

HFA3046, HFA3096, HFA3127, HFA3128

11 FN3076.13

December 21, 2005

HFA3046, HFA3096, HFA3127, HFA3128

Small Outline Plastic Packages (SOIC)

NOTES:

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of

Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006

inch) per side.

4. Dimension “E” does not include interlead flash or protrusions. Interlead

flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater

above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions

are not necessarily exact.

INDEX

AREA

123

-B-

0.25(0.010) C AMBS

-A-

-C-

SEATING PLANE

0.10(0.004)

h x 45o

H0.25(0.010) BM M

M14.15 (JEDEC MS-012-AB ISSUE C)

14 LEAD NARROW BODY SMALL OUTLINE PLASTIC

PACKAGE

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.0532 0.0688 1.35 1.75 -

A1 0.0040 0.0098 0.10 0.25 -

B 0.013 0.020 0.33 0.51 9

C 0.0075 0.0098 0.19 0.25 -

D 0.3367 0.3444 8.55 8.75 3

E 0.1497 0.1574 3.80 4.00 4

e 0.050 BSC 1.27 BSC -

H 0.2284 0.2440 5.80 6.20 -

h 0.0099 0.0196 0.25 0.50 5

L 0.016 0.050 0.40 1.27 6

N14 147

α0° 8° 0° 8° -

Rev. 0 12/93

12 FN3076.13

December 21, 2005

HFA3046, HFA3096, HFA3127, HFA3128

Small Outline Plastic Packages (SOIC)

NOTES:

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of

Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006

inch) per side.

4. Dimension “E” does not include interlead flash or protrusions. Interlead

flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above

the seating plane, shall not exceed a maximum value of 0.61mm

(0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions are

not necessarily exact.

INDEX

AREA

123

-B-

0.25(0.010) C AMBS

-A-

-C-

SEATING PLANE

0.10(0.004)

h x 45°

H0.25(0.010) BM M

M16.15 (JEDEC MS-012-AC ISSUE C)

16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.0532 0.0688 1.35 1.75 -

A1 0.0040 0.0098 0.10 0.25 -

B 0.013 0.020 0.33 0.51 9

C 0.0075 0.0098 0.19 0.25 -

D 0.3859 0.3937 9.80 10.00 3

E 0.1497 0.1574 3.80 4.00 4

e 0.050 BSC 1.27 BSC -

H 0.2284 0.2440 5.80 6.20 -

h 0.0099 0.0196 0.25 0.50 5

L 0.016 0.050 0.40 1.27 6

N16 167

α0° 8° 0° 8° -

Rev. 1 6/05

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN3076.13

December 21, 2005

HFA3046, HFA3096, HFA3127, HFA3128

Quad Flat No-Lead Plastic Package (QFN)

Micro Lead Frame Plastic Package (MLFP)

INDEX

D1/2

D/2

E1/2 E/2

0.15

0.10 BAMC

SEATING PLANE

0.08

FOR ODD TERMINAL/SIDE FOR EVEN TERMINAL/SIDE

SECTION "C-C"

NX b

0.15

REF.

(Nd-1)Xe

(Ne-1)Xe

REF.

4X P

AC0.15

E2/2

TERMINAL TIP

SIDE VIEW

TOP VIEW

BOTTOM VIEW

NX k

NX b

NX L

AREA

4X 0.10 C

/ /

(DATUM B)

(DATUM A)

AREA

INDEX

AREA

CORNER

OPTION 4X

10 L1

L16.3x3

16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE

SYMBOL

MILLIMETERS

NOTESMIN NOMINAL MAX

A 0.80 0.90 1.00 -

A1 - - 0.05 -

A2 - - 1.00 9

A3 0.20 REF 9

b 0.18 0.23 0.30 5, 8

D 3.00 BSC -

D1 2.75 BSC 9

D2 1.35 1.50 1.65 7, 8, 10

E 3.00 BSC -

E1 2.75 BSC 9

E2 1.35 1.50 1.65 7, 8, 10

e 0.50 BSC -

k0.20 - - -

L 0.30 0.40 0.50 8

N162

Nd 4 3

Ne 4 3

P- -0.609

θ--129

Rev. 1 6/04

NOTES:

1. Dimensioning and tolerancing conform to ASME Y14.5-1994.

2. N is the number of terminals.

3. Nd and Ne refer to the number of terminals on each D and E.

4. All dimensions are in millimeters. Angles are in degrees.

5. Dimension b applies to the metallized terminal and is measured

between 0.15mm and 0.30mm from the terminal tip.

6. The configuration of the pin #1 identifier is optional, but must be

located within the zone indicated. The pin #1 identifier may be

either a mold or mark feature.

7. Dimensions D2 and E2 are for the exposed pads which provide

improved electrical and thermal performance.

8. Nominal dimensions are provided to assist with PCB Land

Pattern Design efforts, see Intersil Technical Brief TB389.

9. Features and dimensions A2, A3, D1, E1, P & θ are present when

Anvil singulation method is used and not present for saw

singulation.

10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2

and D2 MAX dimension.