1
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
Tab
12345
8
67
HSOF
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
MOSFET
OptiMOSTM5Power-Transistor,100V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 100 V
RDS(on),max 1.5 mΩ
ID300 A
Qoss 213 nC
QG(0V..10V) 169 nC
Type/OrderingCode Package Marking RelatedLinks
IPT015N10N5 PG-HSOF-8 015N10N5 -
1) J-STD20 and JESD22
2
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
300
243
32
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=40K/W1)
Pulsed drain current2) ID,pulse - - 1200 A TC=25°C
Avalanche energy, single pulse3) EAS - - 775 mJ ID=150A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 375 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.2 0.4 K/W -
Device on PCB,
minimal footprint RthJA - - 62 K/W -
Device on PCB,
6 cm² cooling area1) RthJA - - 40 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=280µA
Zero gate voltage drain current IDSS -
-
0.1
10
5
100 µA VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.3
1.6
1.5
2.0 mΩVGS=10V,ID=150A
VGS=6V,ID=75A
Gate resistance1) RG- 1.4 2.1 Ω-
Transconductance gfs 140 280 - S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 12000 16000 pF VGS=0V,VDS=50V,f=1MHz
Output capacitance Coss - 1800 2300 pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance Crss - 80 140 pF VGS=0V,VDS=50V,f=1MHz
Turn-on delay time td(on) - 36 - ns VDD=50V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Rise time tr- 30 - ns VDD=50V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Turn-off delay time td(off) - 85 - ns VDD=50V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Fall time tf- 30 - ns VDD=50V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 53 - nC VDD=50V,ID=100A,VGS=0to10V
Gate charge at threshold Qg(th) - 36 - nC VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge1) Qgd - 34 51 nC VDD=50V,ID=100A,VGS=0to10V
Switching charge Qsw - 51 - nC VDD=50V,ID=100A,VGS=0to10V
Gate charge total1) Qg- 169 211 nC VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=100A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 146 - nC VDS=0.1V,VGS=0to10V
Output charge1) Qoss - 213 284 nC VDD=50V,VGS=0V
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
5
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 300 A TC=25°C
Diode pulse current IS,pulse - - 1200 A TC=25°C
Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C
Reverse recovery time1) trr - 103 206 ns VR=50V,IF=100A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 316 632 nC VR=50V,IF=100A,diF/dt=100A/µs
1) Defined by design. Not subject to production test.
6
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
400
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 25 50 75 100 125 150 175 200
0
50
100
150
200
250
300
350
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102103
10-1
100
101
102
103
104
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
7
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
100
200
300
400
500
600
700
800
7 V
10 V 6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 100 200 300 400 500 600 700 800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5 V
5.5 V
6 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
01234567
0
100
200
300
400
500
600
700
175 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160
0
40
80
120
160
200
240
280
320
360
gfs=f(ID);Tj=25°C
8
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
max
typ
RDS(on)=f(Tj);ID=150A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0
1
2
3
4
2800 µA
280 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60 80 100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0 2.5
100
101
102
103
104
25 °C
175 °C
175°C max
25°C max
IF=f(VSD);parameter:Tj
9
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
103
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 50 100 150 200
0
1
2
3
4
5
6
7
8
9
10
80 V
50 V
20 V
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
94
96
98
100
102
104
106
108
110
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
10
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
5PackageOutlines
Z8B00169619
REVISION
ISSUE DATE
EUROPEAN PROJECTION
02
20-02-2014
DOCUMENT NO.
E5
E4
K1
e
MILLIMETERS
A
DIM MIN MAX
INCHES
MIN MAX
b1
c
D
D2
E
E1
N
L
2.20 2.40 0.087 0.094
9.70
0.40
10.28
9.70
1.60
9.90
0.60
10.58
10.10
2.10
0.382
0.016
0.405
0.382
0.063
0.390
0.024
0.416
0.398
0.083
8 8
1.20 (BSC) 0.047 (BSC)
b 0.70 0.90 0.028 0.035
1) partially covered with Mold Flash
b2 0.42 0.50 0.017 0.020
H
H1
11.48 11.88 0.452 0.468
H2 7.15 0.281
H3 3.59 0.141
H4 3.26 0.128
L1 0.70 0.028
3.30 0.130
7.50 0.295
8.50 0.335
9.46 0.372
6.55 6.75 0.258 0.266
4.18 0.165
L4 1.00 1.30 0.039 0.051
L2 0.60 0.024
2
SCALE
0
4mm
0
2
Figure1OutlinePG-HSOF-8
11
OptiMOSTM5Power-Transistor,100V
IPT015N10N5
Rev.2.2,2016-10-13Final Data Sheet
RevisionHistory
IPT015N10N5
Revision:2016-10-13,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-12-17 Release of final version
2.1 2015-02-23 Correction of SOA area with Ipulse = 1200A
2.2 2016-10-13 Update Avalanche Energy
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TrademarksupdatedAugust2015
OtherTrademarks
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.