3LP01M Ordering number : EN6139C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP01M General-Purpose Switching Device Applications Features * * * Low ON-resistance High-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V 10 V Allowable Power Dissipation ID IDP PD 0.15 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Drain Current (Pulse) PW10s, duty cycle1% --0.1 A --0.4 A This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Product & Package Information unit : mm (typ) 7023A-010 * Package : MCP * JEITA, JEDEC : SC-70, SOT-323 * Minimum Packing Quantity : 3,000 pcs./reel 0.15 3 3LP01M-TL-E 3LP01M-TL-H 0.9 Packing Type: TL Marking 1.25 0 to 0.08 LOT No. 1 XA 2 0.65 LOT No. TL 0.3 Electrical Connection 0.3 0.425 2.1 0.425 2.0 0.2 Package Dimensions 1 : Gate 2 : Source 3 : Drain 3 SANYO : MCP 1 2 http://semicon.sanyo.com/en/network 71112 TKIM/40908 TIIM TC-00001304/32406PE MSIM TB-00002153/90100 TSIM TA-2006 No.6139-1/7 3LP01M Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID= --1mA, VGS=0V VDS= --30V, VGS=0V VGS=8V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD Ratings min typ max --30 VDS= --10V, ID= --100A VDS= --10V, ID= --50mA V --0.4 80 VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA --1 A 10 A --1.4 110 V mS 8 10.4 11 15.4 27 54 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10s D.C.1% D ID= --50mA RL=300 VOUT G 3LP01M P.G 50 S Ordering Information Package Shipping memo 3LP01M-TL-E Device MCP 3,000pcs./reel Pb Free 3LP01M-TL-H MCP 3,000pcs./reel Pb Free and Halogen Free No.6139-2/7 3LP01M ID -- VDS VDS= --10V --0.18 V .5 --2 --0.16 --2.0V V --0.06 --0.12 --0.10 --0.05 --0.08 --0.04 --0.06 --0.03 VGS= --1.5V --0.02 --0.04 --0.02 --0.01 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 20 15 --50mA ID= --30mA 5 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- 25C 10 7 --25C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 12 = V GS 10 5 --2. A 50m = -V, I D 4.0 = -V GS 8 6 4 2 --60 --40 --20 0 20 40 60 80 --25C 5 3 2 2 3 100 Ambient Temperature, Ta -- C 120 140 5 7 160 IT00083 2 --0.1 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 25C Ta=75C 3 2 --25C 2 3 5 7 2 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S A 30m = -V, I D 7 3 IT00082 | yfs | -- ID 1.0 16 14 25C Ta=75C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.1 3 --4.0 IT00078 3 7 3 --3.5 Drain Current, ID -- A VGS= --2.5V Ta=75C --3.0 VGS= --4V IT00079 5 2 --2.5 RDS(on) -- ID 1000 7 Static Drain-to-Source On-State Resistance, RDS(on) -- --10 RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- --9 --2.0 5 1.0 --0.01 0 --2 --1.5 7 25 --1 --1.0 100 Ta=25C 0 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 10 25C Ta= --0.14 --6.0 --0.07 75 C Drain Current, ID -- A --0.08 --25 C --4 . --3 .0V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 VDS= --10V 7 5 3 25C 2 0.1 5C 2 Ta= -- 75C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6139-3/7 3LP01M IS -- VSD 3 Switching Time, SW Time -- ns 5 --0.01 --0.5 --0.6 --0.7 --25C 2 25C 3 Ta=7 5C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --10 --5 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate-to-Sourse Voltage, VGS -- V Source Current, IS -- A 7 VDD= --15V VGS= --4V 7 2 --0.1 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02381 No.6139-4/7 3LP01M Embossed Taping Specification 3LP01M-TL-E, 3LP01M-TL-H No.6139-5/7 3LP01M Outline Drawing 3LP01M-TL-E, 3LP01M-TL-H Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.6139-6/7 3LP01M Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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