BR93G66-3B
Datashee
t
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
1/37
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
Serial EEPROM series Standard EEPRO M
MicroWire BUS EEPROM (3-Wire)
BR93G66-3B
●Description
BR93G66-3B is serial EEPROM of serial 3-line Interface method.
They are 16bit organizati on and CS PIN is the third PIN in their PIN configuration.
●Features
■ 3-line communications of chip select, serial clock,
serial data input / output (the case where input and
output are shared)
■ Actions available at high spee d 3MHz clock
(4.5V ~ 5.5V)
■ High speed write avai lable (write time 5ms max.）
■ Same package and pin layout from 1Kbit to 16Kbit
■ 1.7~5.5V single po wer source action
■ Address auto increment function at read action
■ Write mistake prevention function
» Write prohibition at power on
» Write prohibition by command code
» Write mistake preventio n functio n at low voltage
■ Program cycle auto delete and auto end functio n
■ Program condition display by READY / BUSY
■ Compact p ackage
SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MS OP8/
TSSOP-B8J/DIP-T8/VSON008X2030
■ Data retention for 40 years
■ Data rewrite up to 1,000,000 times
■ Data at shipment all addresses FFFFh
●Packages W(Typ.) x D(Typ.)x H(Max.)
●BR93G66-3B
Capacity Bit format Type Power source
voltage DIP-T8*1 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 VSON008
X2030
4Kbit 256×16 BR93G66-3B
1.7~5.5V ● ● ● ● ● ● ● ●
*1 DIP-T8 is not halogen free package
SOP8
5.00mm x 6.20mm x 1.71mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
V
SON008X2030
2.00mm x 3.00mm x 0.60mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
MSOP8
2.90mm x 4.00mm x 0.90mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
2/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Absolute Maximum Ratings
Parameter Symbol Ratings Unit Remarks
Impressed voltage VCC -0.3 to +6.5 V
800 (DIP-T8) When using at Ta=25℃ or hig her 8.0mW to be reduced per 1℃.
450 (SOP8) When using at Ta=25℃ or hig her 4.5mW to be reduced per 1℃.
450 (SOP-J8) When using at Ta=25℃ or hig her 4.5mW to be reduced per 1℃.
300 (SSOP-B8) When using at Ta=25℃ or hig her 3.0mW to be reduced per 1℃.
330 (TSSOP-B8) When using at Ta=25℃ or hig her 3.3mW to be reduced per 1℃.
310 (TSSOP-B8J) When using at Ta=25℃ or hig her 3.1mW to be reduced per 1℃.
310 (MSOP8) When using at Ta=25℃ or hig her 3.1mW to be reduced per 1℃.
Permissible
dissipation Pd
300 (VSON008X2030)
mW
When using at Ta=25℃ or hig her 3.0mW to be reduced per 1℃.
Storage
temperature range Tstg －65 to +150 ℃
Action
temperature range Topr －40 to +85 ℃
Terminal voltage ‐ -0.3 to Vcc+1.0 V The Max value of Terminal Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Terminal
Voltage is not under -0.8V.
Junction
temperature Tjmax 150 ℃ Junction temperature at the storage condition
●Memory cell characteristic s (VCC= 1.7～5.5V)
Limit
Parameter Min. Typ. Max. Unit Condition
Number of data rewrite times *1 1,000,000 - - Times
Ta=25℃
Data retention *1 40 - - Years
Ta=25℃
○Shipment data all address FFFFh
*1 Not 100% TESTED
●Recommended action conditions
Parameter Symbol Limits Unit
Power source voltage VCC 1.7~5.5
Input voltage VIN 0~VCC V
3/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Electrical characteristics (Unless otherwise specified, VCC=1.7～5.5V, Ta=-40～+85℃)
Limits
Parameter Symbol
Min. Typ. Max. Unit Condition
“L” input voltage VIL -0.3*1 - 0.3VCC V
1.7V≦VCC≦5.5V
“H” input voltage VIH 0.7VCC - VCC+1.0 V
1.7V≦VCC≦5.5V
“L” output voltage 1 VOL1 0 - 0.4 V
IOL=2.1mA, 2.7V≦VCC≦5.5V
“L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA
“H” output voltage 1 VOH1 2.4 - VCC V
IOH=-0.4mA, 2.7V≦VCC≦5.5V
“H” output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA
Input leak current1 ILI1 -1 - +1 µA VIN=0V~VCC(CS,SK,DI)
Output leak current ILO -1 - +1 µA VOUT=0V~VCC, CS=0V
- - 1.0 mA VCC=1.7V, fSK=1MHz, tE/W=5ms (WRITE)
ICC1 - - 2.0 mA VCC=5.5V ,fSK=3MHz, tE/W=5ms (WRITE)
- - 0.5 mA fSK=1MHz (READ)
ICC2 - - 1.0 mA fSK=3MHz (READ)
- - 2.0 mA
VCC=2.5V, fSK=1MHz
tE/W=5ms (WRAL, ERAL)
Current consumption
at action
ICC3 - - 3.0 mA
VCC=5.5V ,fSK=3MHz
tE/W=5ms (WRAL, ERAL)
Standby current ISB1 - - 2.0 µA CS=0V
*1 When the pulse width is 50ns or less, the Min value of VIL is admissible to -0.8V.
4/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Action timing characteristics (Unless otherwise specified, VCC=1.7~2.5V, Ta=-40~+85℃)
Limits
Parameter Symbol Min. Typ. Max. Unit
SK frequency fSK - - 1 MHz
SK “H” time tSKH 250 - - ns
SK “L” time tSKL 250 - - ns
CS “L” time tCS 250 - - ns
CS setup time tCSS 200 - - ns
DI setup time tDIS 100 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 100 - - ns
Data “1” output delay tPD1 - - 400 ns
Data “0” output delay tPD0 - - 400 ns
Time from CS to output establishment tSV - - 400 ns
Time from CS to High-Z tDF - - 200 ns
Write cycle time tE/W - - 5 ms
(Unless otherwise specified, V CC= 2.5~4.5V, Ta=-40~+85℃) Limits
Parameter Symbol Min. Typ. Max. Unit
SK frequency fSK - - 2 MHz
SK “H” time tSKH 230 - - ns
SK “L” time tSKL 200 - - ns
CS “L” time tCS 200 - - ns
CS setup time tCSS 50 - - ns
DI setup time tDIS 100 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 100 - - ns
Data “1” output delay tPD1 - - 200 ns
Data “0” output delay tPD0 - - 200 ns
Time from CS to output establishment tSV - - 150 ns
Time from CS to High-Z tDF - - 100 ns
Write cycle time tE/W - - 5 ms
(Unless otherwise specified, V CC= 4.5~5.5V, Ta=-40~+85℃) Limits
Parameter Symbol Min. Typ. Max. Unit
SK frequency fSK - - 3 MHz
SK “H” time tSKH 100 - - ns
SK “L” time tSKL 100 - - ns
CS “L” time tCS 200 - - ns
CS setup time tCSS 50 - - ns
DI setup time tDIS 50 - - ns
CS hold time tCSH 0 - - ns
DI hold time tDIH 50 - - ns
Data “1” output delay tPD1 - - 200 ns
Data “0” output delay tPD0 - - 200 ns
Time from CS to output establishment tSV - - 150 ns
Time from CS to High-Z tDF - - 100 ns
Write cycle time tE/W - - 5 ms
5/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Sync data input / output timing
○Data is taken by DI sync with the rise of SK.
○At read action, data is output from DO in sync with the rise of SK.
○The STATUS signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.
○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.
○1/fSK is the SK clock cycle, even if fSK is maximum, the SK clock cycle can’t be tSKH(Min.)+tSKL(Min.)
○For “Write cycle time tE/W”, please see Fig ure 36,37,39,40.
○For “CS “L” time tCS”, please see Figure 36,37,39,4 0.
●Block diagram
Figure 1. Sync data input / output timing
CS
SK
DO(READ)
DI
DO(WRITE)
tCSS tSKH tSKL tCSH
tDIS tD IH
tPD1
tPD0
t DF
STATUS VALID
tSV
1/ fSK
Figure 2. Block diagram
Command decode
Control
Clock generation
Power source voltage detection
Write
prohibition High voltage occurrence
Command
re
g
iste
r
Address
buffer
SK
DI
Dummy bit
DO Data
register R/W
amplifier
8bit 8bit
16bit 16bit
4,096 bit
EEPROM
CS
Address
decoder
6/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Pin Configuration
●Pin Description
Figure 3. Pin assignment diagr am
Pin name I / O Function
DU - Don’t use terminal*1
VCC - Power source
CS Input Chip select input
SK Input Serial clock input
DI Input Start bit, ope code, address, and serial data input
DO Output
Serial data output, READY / BUSY
――――― STATUS display output
GND - All input / output reference voltage, 0V
NC - Non connected terminal*1
*1 Terminals not used may be set to any of ’H’,’L’, and OPEN
NC GND DO DI
DU V
CC CS SK
BR93G66-3B :DIP-T8
BR93G66F-3B :SOP8
BR93G66FJ-3B :SOP-J8
BR93G66FV-3B :SSOP-B8
BR93G66FVT-3B :TSSOP-B8
BR93G66FVJ-3B :TSSOP-B8J
BR93G66FVM-3B :MSOP8
BR93G66NUX-3B :VSON008X2030
7/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves
Figure 4. "H" input voltage VIH(CS,SK,DI) Figure 5. "L" input voltage VIL(CS,SK,DI)
Figure 6. "L" output voltage1 VOL1(VCC=2.7V) Figure 7. "L" output voltage2 VOL2(VCC=1.7V)
0
1
2
3
4
5
6
0123456
SUPPLY VOLTAGE: VCC(V)
H INPUT VO LTAGE : V
IH
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
6
0123456
SUPPLY VOLTAGE: VCC(V)
L INPUT VOLTAG E : V
IL
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
012345
L OUT P UT CURRE NT: I
OL
(mA)
L O UTP UT V OLT A GE 1 : V
OL1
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
012345
L OUT P UT CURRE NT : I OL(mA)
L O UTP UT VOLT A GE2 : V
OL2(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
8/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
Figure 8. "H" output voltage1 VOH1(VCC=2.7V) Figure 9. "H" output voltage2 VOH2(VCC=1.7V)
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VOLTAGE: VCC(V)
INPUT LEAK CURRE NT1 : I
LI1
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Figure 10. Input leak current1 ILI1 (CS) Figure 11. Input leak current1 ILI1(SK)
0
1
2
3
4
5
0 0.4 0.8 1.2 1.6
H O U T P UT CURRE NT : I
OH
(mA)
H OUTPUT VO LTAG E1 : V
OH1
(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
0 0.4 0.8 1.2 1.6
H O UTP UT CUR RE NT : I OH(mA)
H OUT P UT V O LTAGE2 : V
OH2(V)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VOLTAGE: VCC(V)
INPUT LEAK CURRE NT1 : I
LI1
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
9/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
Figure 12. Input leak current1 ILI1(DI) Figure 13. Output leak current ILO(DO)
Figure 14. Current consumptio n at W RITE action
I
CC1(WRITE, fSK=1MHz) Figure 15. Current consumptio n at W RITE action
ICC1(WRITE,fSK=3MHz)
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VO LTAG E: VCC(V)
O UTPUT LEA K CURRE NT : I
LO
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRE NT CO NS UM P TI ON A T
W RIT E ACTI O N : I
CC1
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRE NT CO NS UM P TI ON AT
WRIT E ACTI ON : I
CC1
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.2
0.4
0.6
0.8
1
1.2
0123456
SUPPLY VOLTAGE: VCC(V)
INPUT LEAK CURRE NT1 : I
LI1
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
10/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
Figure 16 Current consumption at READ action
ICC2(READ,fSK=1MHz). Figure 17. Current consumption at READ action
ICC2(READ,fSK=3MHz)
Figure 18. Current consumption at WRAL action
ICC3(WRAL,fSK=1MHz)
Figure 19. Current consumption at WRAL action
ICC3(WRAL,fSK=3MHz)
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRE NT CO NS UM P TI ON A T
READ ACTI O N : I
CC2
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRE NT CONS UMP TI ON AT
READ ACTION : I
CC2
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRENT CONSUM PTI ON AT
W RAL ACTI O N : I
CC3
(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
1
2
3
4
5
0123456
SUPPLY VOLTAGE: VCC(V)
CURRENT CO NS UM PTI ON AT
WRAL ACTION : I CC3(mA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
11/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
SK HIGH TIME : t
SKH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
Figure 20. Current consumptio n at standby ac tion
ISB1(CS=0V)
Fi
gure
21
.
SK
f
requency
f
SK
Fi
gure
2
2
.
SK
"H"
t
i
me tSKH
Fi
gure
2
3
.
SK
"L"
t
i
me tSKL
0.01
0.1
1
10
100
1000
0123456
SUP P LY VO LTAGE: VCC(V)
SK FREQUENCY : f
SK
(MHz)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
SK LOW T IME : t
SKL
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
SPEC
0
0.5
1
1.5
2
2.5
0123456
SUPPLY VOLTAGE: VCC(V)
ST ANDBY ACTI O N : I
SB1
(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
12/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
-300
-250
-200
-150
-100
-50
0
50
0123456
SUPPLY VO LTAG E: VCC(V)
CS HOLD TI M E : t
CSH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
CS "L" TIME : t
CS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
50
100
150
200
250
300
0123456
SUPPLY VOLTAGE: VCC(V)
CS SETUP T I ME : t
CSS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
-50
0
50
100
150
0123456
SUPPLY VO LTAG E: VCC(V)
DI SETUP TI ME : t
DIS
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
Fi
gure
2
4
.
CS
"L"
t
i
me tCS
Fi
gure
2
5.
CS
h
o
ld
t
i
me tCSH
Fi
gure
2
6
.
CS
setup t
i
me tCSS
Fi
gure
2
7.
DI
setup t
i
me tDIS
13/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
-50
0
50
100
150
0123456
SUPPLY VOLTAGE: VCC(V)
DI HOLD TI M E : t
DIH
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃ SPEC
0
200
400
600
800
1000
0123456
SUPPLY VOLTAGE: VCC(V)
DATA "0" OUTPUT DELAY : t
PD0
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
100
200
300
400
500
0123456
SUPPLY VOLTAGE: VCC(V)
TIME FROM CS TO OUTPUT ESTABLISHMENT
:
t
SV
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
Fi
gure
2
8
.
DI
h
o
ld
t
i
me tDIH
Fi
gure
2
9
.
D
ata
"0"
output
d
e
l
a
y
tPD0
Fi
gure
30
.
D
ata
"1"
output
d
e
l
a
y
tPD1
Fi
gure
31
.
Ti
me
f
rom
CS
to output esta
bli
s
h
ment tSV
0
200
400
600
800
1000
0123456
SUPPLY VOLTAGE: VCC(V)
DATA "1" OUTPUT DELAY : t
PD1
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
14/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Typical Performance Curves‐Continued
0
50
100
150
200
250
0123456
SUPPLY VOLTAGE: VCC(V)
TIME FROM CS TO HIGH-Z : t
DF
(ns)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
0
1
2
3
4
5
6
0123456
S UPP LY VOLT AG E : VCC(V)
WRITE CYCLE TIME : t
E/W
(ms)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
Fi
gure
3
2
.
Ti
me
f
rom
CS
to
Hi
g
h
-
Z
tDF
Fi
gure
3
3
.
W
r
i
te cyc
l
e t
i
me tE/W
15/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Description of operations
Communications of the MicroWire BUS are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and
CS (chip select) for device selection.
When to connect one EEPROM to a microcontroll er, connect it as shown in Figure 34(a) or Figure 34(b). When to use the
input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 34(b) (Refer to
pages 21, 22.), and connection by 3 lines is avail able.
In the case of plural connections, refer to Figure 34 (c).
Communications of the MicroWire BUS are started by the first “1” input after the rise of CS. This input is called a start bit.
After input of the start bit, input ope code, address and data. Address and data are i np ut all in MSB first manners.
“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the
microcontroller, input “0” befor e the star t bit input, to control the bit width.
●Command mode
Address
Command Start
bit Ope
code BR93G66-3
MSB of Address(Am) is A7
Data
MSB of Data(Dx) is D15 Required clocks(n)
Read (READ) *1 1 10 A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(READ DATA) BR93G66-3:n=27
Write enable (WEN) 1 00 1 1 * * * * * *
Write disable (WDS) 1 00 0 0 * * * * * * BR93G66-3:n=11
Write (WRITE) *2 1 01 A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA)
Write all (WRAL) *2 1 00 0 1 * * * * * * D15~D0(WRITE DATA) BR93G66-3:n=27
Erase (ERASE) 1 11 A7,A6,A5,A4,A3,A2,A1,A0
Erase all (ERAL) 1 00 1 0 * * * * * * BR93G66-3:n=11
・ Input the address and the data in MSB first manners.
・ As for *, input either “1” or “0” .
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are
sequentially output continuously. (Auto increment function)
*2 For write or write all commands, a internal erase or erase all is included and no separate erase or erase all is needed before write or write all command.
(a). Connection by 4 lines
CS
SK
DO
DI
CS
SK
DI/O
CS
SK
DI
DO
(b). Connection by 3 lines
CS
SK
DI
DO
CS3
CS2
CS1
SK
DO
DI
CS
SK
DI
DO
Device 1
CS
SK
DI
DO
Device 2
CS
SK
DI
DO
Device 3
(c). Connection example of plural devices
Figure 34. Connection method with microcontroller
Micro-
controller BR93GXX
Micro-
controller
Micro-
controller
BR93GXX
16/37
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TSZ22111・15・001
●Timing chart
1) Read cycle (READ)
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is
recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter.
*2 For the meaning of Am,Dx,n,please see tables of command mode in Page15. For example, Am=A7,Dx=D15,n=27.
○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0,
in sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync
with the rise of SK.
This IC has an address auto increment function which is valid only at read command. This is the function where after the
above read executio n, by cont inuously i nputting SK clock, t he abov e addr ess data is read sequential ly. And, durin g the
auto increment, keep CS at “H”.
2) Write cycle (WRITE)
For the meaning of Am,Dx,n, please see tables of command mode in Page15.
○In this command, input 16bit data are written to designated addresses (Am~A0). The actual write starts by the fall of CS
of D0 taken SK clock.
When STAT US is not detected (CS=”L” fixed),make sure Max 5ms time is in comforming with tE/W.
When STATUS is detected (CS=”H”), all commands are not accepted for areas where “L” (BUSY) is output from D0,
therefore, do not input any command.
3) Write all cycyle (WRAL)
For the meaning of Dx,n,please see tables of command mode in Page15.
○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word
but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.
In WRAL, STAT US can be detected in the same manner as in WRITE command.
CS
1
2
1
4
High-Z
1
Am
A1
A0
0
Dx
Dx-1
D1
Dx
Dx-1
*1
*2
D0
SK
DI
DO
0
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
n+1
*2
CS
1 2
1
4
High-Z
0
A
m
A
1
A
0Dx Dx-1 D1
～
～
D0
SK
DI
DO
1
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
～
～
～
～
t
E/W
READY
CS
1 2
1
5
High-Z
0 0 0 Dx Dx-1 D1
～
～
D0
SK
DI
DO
～
～
～
～
～
～
～
～
～
～
～
～
～
～
n
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
～
～
～
～
t
E/W
READY
1
～
～
～
～
Figure 35. Read cycle
Figure 36. Write cycle
Figure 37. Write all cycle
Am: MSB of address
Dx: MSB of data
n: required clocks
Am: MSB of address
Dx: MSB of data
n: required clocks
Dx: MSB of data
n: required clocks
17/37
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TSZ22111・15・001
4) Write enable (WEN) / disable (WDS) cycle
For the meaning of n,please see tables of command mode in Page15.
○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is
necessary to execute the write enable com mand. And, once this command is executed, it is valid unitl the write disabl e
command is executed or the power is turned off. However, the read command is valid irrespective of write enable /
diable command. Input to SK after 6 clocks of this command is available by either “1” or “0”, but be sure to input it.
○When the write enable command is executed after power on, write enable status gets in. When the write disable
command is executed then, the IC gets in write disa ble status as same as at power on, and then the write command is
canceled thereafter in software manner. However, the read command is executable. In write enable status, even when
the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the
write disable command after completion of writ e.
5) Erase cycle (ERASE)
For the meaning of Am,n,please see tables of command mode in Page15.
○In this command, data of the designated address is made into “1”. The data of the designated address
becomes “FFFFh”.
Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.
In ERASE, STATUS can be detected in the same man ner as in WRITE command.
6) Erase all cycle (ERAL)
For the meaning of n,please see tables of command mode in Page15.
○In this command, data of all addresses is made into “1”. Data of all addresses becomes ”FFFFh”.
Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.
In ERAL, STATUS can be detected in the same manner as in WRAL command.
Figure 38. Write enable (WEN) / disable (WDS) cycle
CS
1
2
1 1 1
4
High-Z
～
～
SK
DI
DO
～
～
STATUS
t
CS
t
SV
BUSY
t
E/W
READY
A
m
～
～
～
～
～
～
A
3
A
2
A
1
n
A
0
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
Figure 39. Erase cycle timing
CS
1
2
1
4
High-Z
SK
DI
DO
～
～
STATUS
t
CS
t
SV
BUSY
～
～
～
～
～
～
t
E/W
READY
1
n
～
～
～
～
～
～
～
～
～
～
～
～
～
～
0 0
0
～
～
Figure 40. Erase all cycle timing
CS
1
2
1
5
High-Z
0 0
SK
DI
DO
n3 4 6
7
8
ENABLE=1 1
DISABLE=0 0
～
～
～
～
～
～
～
～
n: required clocks
Am: MSB of address
n: required clocks
n: required clocks
18/37
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TSZ22111・15・001
●Application
1)Method to cancel each command
○READ
○WRITE,WRAL
○ERASE, ERAL
*1 For the meaning of m,x, please see tables of command mode in Page15
Figure 41. READ cancel available timing
Note 1) If VCC is made OFF in this area, designated a dd ress dat a is not
guaranteed, therefore write once again is suggested.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fall in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
Figure 42. WRITE, WRAL cancel available timing
Start bit Ope code Address Data
1bit 2bit m+1bit x+1bit
Cancel is available in all areas in read mode.
・Method to cancel：cancel by CS=“L”
*1
a：From start bit to the clock rise of D0 taken
Cancel by CS=“L”
b：The clock rise of D0 taken and after
Cancellation is not available by any means.
c：n+1 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously cancel function is not available.
Start bit Ope code Address Data t
E/W
a
*1
1bit 2bit m+1bit x+1bit
c
b
*1 For the meaning of m,n,x,
please see tables of command mode in Page15
*1
Figure 43. ERASE, ERAL cancel available timing
a：From start bit to clock rise of A0 taken
Cancel by CS=“L”
b：Clock rise of A0 taken
Cancellation is not available by any means.
c：n+1 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously cancel function is not available.
Note 1) If VCC is made OFF in this area, designated a dd ress dat a is not
guaranteed, therefore write once again is suggested.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fall in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
*1 For the meaning of m,n,please see tables of command mode in Page15
Clock rise of A0 taken
SK
DI
n-1
A1
n n+1 n+2
b c
a
Enlarged figure
A0
Clock rise of D0 taken
SK
DI
n-1
D1
D0
n n+1 n+2
b
Enlarged figure
c
a
A1
1bit 2bit m+1bit
a c
b
Start bit Ope code Address t
E/W
*1
19/37
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TSZ22111・15・001
2) At standby
When CS is “L”, even if SK,DI,DO are “L”,”H” or with middle electric potential, current does not over ISB1 Max.
3) I/O peripheral circuit
3-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down resistance Rcs of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance valu e from microcontroller VOH, IOH, and VIL characteristics of this IC.
3-2) DO is available in both pull up and pull down.
Do output always is “High-Z” except in READ Y / BUSY STATUS and data output in read command.
Malfunction may occur when “High-Z” is input to the microcontroller port connected to DO, it is necessary to pull down
and pull up DO. W hen there is no influence u pon the microcontroller actions, DO may be OPEN.
If DO is OPEN, and at timing to output STATUS READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes
this as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
Figure 45. READY output timing at DO=OPEN
Microcontroller
V
OHM
“H” outpu t I
OHM
Rcs
V
IHE
“L” input
EEPROM
Figure 44. CS pull down resistance
VOHM
IOHM
Rcs ≧ ・・・①
2.4
2×10-3
∴ Rcs
≧ 1.2 [kΩ]
VOHM ≧ V
IHE ・・・②
Rcs ≧
Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
・VIHE
・VOHM
・IOHM
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
: EEPROM VIH specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
CS
SK
DI
DO
D0
BUSY
READY
High-Z
Enlarged
CS
SK
DI
DO
BUSY
High-Z
Impr ovement by DO pul l up
BUSY READY
CS=SK=DI=”H”
When DO=OPEN
CS=SK=DI=”H”
When DO=pull up
DO
“H”
20/37
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TSZ22111・15・001
○Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
○READY / BUSY STATUS display (DO terminal)
This display outputs the internal STATUS signal. When CS is started after tCS
from CS fall after write command input, “H” or “L” is output.
R/B display＝“L” (BUSY) = write under execution
After the timer circuit in the IC works and creates the period of tE/W, this timer circuit completes automatically.
And the memory cell is written in the period of tE/W, and during this period, other command is not accepted.
R/B display = “H” (READY) = command wait STATUS
After tE/W (max.5ms) the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and If signals are input in SK, DI, malfunction may occur,
therefore, DI=“L” in the area
CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while STATUS signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, STATUS READY output is cancelled, and malfunction and mistake write may occur.
Microcontroller
V
ILM
“L” input
I
OLE
V
OLE
“L” output
EEPROM
Rpu
Microcontroller
V
IHM
“H” input I
OHE
V
OHE
“H” output
EEPROM
Rpd
Figure 46. DO pull up resistance
Rpu ≧ ・・・③
5－0.4
2.1×10-3
∴ Rpu
≧ 2.2 [kΩ]
VOLE ≦ V
ILM ・・・④
Rpu ≧
Example) W hen VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
VCC－VOLE
IOLE
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.
Rpd ≧ ・・・⑤
5－0.2
0.1×10-3
∴ Rpd
≧ 48 [kΩ]
VOHE ≧ V
IHM ・・・⑥
Rpd ≧
Example) When VCC =5V, VOHE=VCC－0.2V, IOHE=0.1mA,
VIHM=VCC×0.7V from the equation ⑤,
VOHE
IOHE
With the value of Rpd to satisfy the above e quation, V OHE becomes 2.4V
or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 47. DO pull down resistance
（DO STATUS）
（DO STATUS）
Figure 48. READY/BUSY STATUS output timing chart
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
・VOLE
・IOLE
・VILM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
・VOHE
・IOHE
・VIHM
CS
High-Z
SK
DI
DO
CLOCK
WRITE
INSTRUCTION
READY
STATUS
tSV
BUSY
tE/W
21/37
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TSZ22111・15・001
4) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resist ance R between these DI an d DO te rminals, it i s possible to carry ou t contro l by 1 co ntrol line .
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input of EEPROM.
Drive from the microcontroller DI/O output to DI input of EEPROM on I/O timing, and output signal from DO output of
EEPROM occur at the same time in the following points.
4-1) 1 clock cycle to take in A0 addr ess data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command inp ut after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these (4-1) and (4-2) does not cause disorder in basic operations, if resistance R is inserted.
Note) As for the case (4-2), attention must be paid to the following.
When STATUS READY is outp ut, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microc ontroller DI/O=”H”,if SK clock is
input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at STATUS READY
output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.
Microcontroller
DI/O PORT
DI
EEPROM
DO
R
Figure 49. DI, DO control line common connection
EEPROM CS input
EEPROM SK input
EEPROM DI input
EEPROM DO output
Microcontroller DI/O port
A1
High-Z
Collision of DI input and DO output
“H”
A0
0 Dx Dx-1 Dx-2
A1 A0 High-Z
Microcont roll er output
Microcontroller input
Figure 50. Collision timing at read data output at DI, DO direct connection
EEPROM CS input
EEPROM SK input
EEPROM DI input
EEPROM DO output
Microcontroller DI/O port
Wri t e c o m mand
Microcontroller output
BUSY
BUSY READY
READY
READY
Collision of DI input and DO output
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
High-Z
Wri t e c o m mand
Wri t e c o m mand
Wri t e c o m mand
Wri t e c o m mand
Microcontroller input Microcontroller output
Figure 51. Collision timing at DI, DO direct connection
CS
SK
DI
DO
READY
High-Z
Sta rt b it
Because DI=”H”, set
SK=”L” at CS rise.
Figure.52 Start bit input timing at DI, DO direct connection
*
1
*1 X=15,for the meaning of x ,
please see tables of command mode in Page15.
22/37
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TSZ22111・15・001
○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of po wer source may occur. When all owable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resist ance R, and set the value R to satisfy EEPROM input level VIH/VIL even
under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon
basic operations.
4-3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the level VIH of EEPROM should satisfy the following.
4-4) DO STATUS READY output timing
(When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Microcontroller
DI/O PORT DI
EEPROM
DO
R
“H” out pu t
I
OHM
V
OHM
V
OLE
“L” output
Figure 53. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
Conditions
VIHE ≦ I
OHM×R + VOLE
At this moment, if VOLE=0V,
V
IHE ≦ I
OHM×R
∴ R ≧ ・・・⑦
VIHE
IOHM
Microcontroller
DI/O PORT DI
EEPROM
DO
R
“L” output
I
OLM
V
OLM
V
OHE
“H” output
Conditions
VILE ≧ V
OHE – IOLM×R
As this moment, VOHE=VCC
V
ILE ≧ VCC – IOLM×R
∴ R ≧ ・・・⑧
VCC – VILE
IOLM
Figure 54. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)
Example) When VCC=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦, From the equ ation⑧,
R ≧
R ≧
VIHE
IOHM
3.5
0.4×10-3
∴ R ≧ 8.75 [kΩ] ・・・⑨
R ≧
R ≧
VCC – VILE
IOLM
5 – 1.5
2.1×10-3
∴ R ≧ 1.67 [kΩ] ・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴ R ≧ 8.75 [kΩ]
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller IOH specifications
・VIHE
・VOLE
・IOHM
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller IOL specifications
・VILE
・VOHE
・IOLM
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TSZ22111・15・001
5) Equivalent circuit
6)Notes on power ON/OFF
○At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at po wer ON, set CS “L”. (When CS is in “L” status all inputs
are cancelled.) And at power decline, o wing to po wer line capacity and so forth, low power status may continue long. At
this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”.
○POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However , if CS is
“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the
follwing conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.
○LVCC circuit
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.2V) or below, it pre v ent data rewrite
Output circuit
DO
OEint.
Figure 55. Output circuit (DO)
Figure 57. Input circuit (DI)
Figure 56. Input circuit (CS)
Figure 58. Input circuit (SK)
VCC
GND
VCC
GND
VCC
CS
Bad example Good example
Figure 59. Timing at power ON/OFF
Figure 60. Rise waveform diagram
（Bad example）CS pin is pulled up to VCC
In this case, CS becomes “H” (active status), and EEPROM may have malfunction,
mistake write owing to noise and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
（Good example）It is “L” at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, which please note.
Recommended conditions of tR, tOFF, Vbot
tOFF
tR
Vbot
0
VCC
tR t
OFF Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or below
Input citcui t
CS CSint.
RESET int.
Input circuit
DI
CS int.
Input circuit
SK
CS int.
24/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7)Noise countermeasures
○VCC noise (bypass capacit or)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
○SK noise
When the rise time of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit
displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about
0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time of
SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the
clock rise, fall time as small as possible.
25/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Operational Notes
(1) Described numeric values and data are design representative values, and the values ar e not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, LSI
may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear
exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the abs olute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that
of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allo wable loss in actua l use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of pin short between LSI terminals and terminals, terminals and power source, terminals and
GND owing to unconnect use, LSI may be destructed.
(7) Using this LSI in a strong electromagnetic field may cause malfunction, therefor e, evaluate the design sufficiently.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to
help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
26/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Ordering Information
B R 9 3 G 6 6 x x x －3 x x x
BUS type
93：MicroWire
Operating temperature
/ Operating Voltage
-40℃ to +85℃/ 1.7V to 5.5V
Process code
Pin assignment
Blank: Pin1~8: CS, SK, DI, DO, GND, ORG, DU, VCC respectively
A : Pin1~8: CS, SK, DI, DO, GND, NC, DU, VCC respectively
B : Pin1~8: DU, VCC, CS, SK, DI, DO, GND, NC respectively
66=4K
Capacity
Package
Blank :DIP-T8
F :SOP8
FJ :SOP-J8
FV :SSOP-B8
FVT :TSSOP-B8
FVJ :TSSOP-B8J
FVM :MSOP8
NU
X
:VSON008X2030
Packaging and forming specification
E2 : Embossed tape and reel
(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)
TR : Embossed tape and ree l
(MSOP8, VSON008X2030)
Blank : Tube
(DIP-T8)
27/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Lineup Package
Capacity Type Quantity
Orderable Part Number
DIP-T8 Tube of 2000 BR93G66-3B
SOP8 Reel of 2500 BR93G66F-3BGTE2
SOP8-J8 Reel of 2500 BR93G66FJ-3BGTE2
SSOP-B8 Reel of 2500 BR93G66FV-3BGTE2
TSSOP-B8 Reel of 3000 BR93G66FVT-3BGE2
TSSOP-B8J Reel of 2500 BR93G66FVJ-3BGTE2
MSOP8 Reel of 3000 BR93G66FVM-3BGTTR
4K
VSON008X2030 Reel of 4000 BR93G66NUX-3BTTR
28/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Physical Dimensions Tape and Reel information
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
TubeContainer
Quantity
Direction of feed 2000pcs
Direction of products is fixed in a container tube
(Unit : mm)
DIP-T8
0°−15°
7.62
0.3±0.1
9.3±0.3
6.5±0.3
85
14
0.51Min.
3.4±0.3
3.2±0.2
2.54 0.5±0.1
29/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SOP8
0.9±0.15
0.3MIN
4
°
+
6
°
−
4
°
0.17 +0.1
-
0.05
0.595
6
43
8
2
5
1
7
5.0±0.2
6.2±0.3
4.4±0.2
(MAX 5.35 include BURR)
1.27
0.11
0.42±0.1
1.5±0.1
S
0.1 S
30/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SOP-J8
4°+6°
−4°
0.2±0.1
0.45MIN
234
5678
1
4.9±0.2
0.545
3.9±0.2
6.0±0.3
(MAX 5.25 include BURR)
0.42±0.1
1.27
0.175
1.375±0.1
0.1 S
S
31/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SSOP-B8
0.08 M
0.3MIN
0.65
(0.52)
3.0±0.2
0.15±0.1
(MAX 3.35 include BURR)
S
S
0.1
1234
5678
0.22
6.4±0.3
4.4±0.2
+0.06
−0.04
0.1
1.15±0.1
32/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
1pin
(Unit : mm)
TSSOP-B8
0.08 S
0.08 M
4 ± 4
234
8765
1
1.0±0.05
1PIN MARK
0.525
0.245+0.05
−0.04
0.65
0.145+0.05
−0.03
0.1±0.05
1.2MAX
3.0±0.1
4.4±0.1
6.4±0.2
0.5±0.15
1.0±0.2
(MAX 3.35 include BURR)
S
33/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
1pin
(Unit : mm)
TSSOP-B8J
0.08 M
0.08 S
S
4 ± 4
(MAX 3.35 include BURR)
578
1234
6
3.0±0.1
1PIN MARK
0.95±0.2
0.65
4.9±0.2
3.0±0.1
0.45±0.15
0.85±0.05
0.145
0.1±0.05
0.32
0.525
1.1MAX
+0.05
−0.03
+0.05
−0.04
34/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
(Unit : mm)
MSOP8
0.08 S
S
4.0±0.2
8
3
2.8±0.1
1
6
2.9±0.1
0.475
4
57
(MAX 3.25 include BURR)
2
1PIN MARK
0.9MAX
0.75±0.05
0.65
0.08±0.05
0.22 +0.05
−0.04
0.6±0.2
0.29±0.15
0.145 +0.05
−0.03
4°
+6°
−4°
35/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
4000pcs
TR
()
Direction of feed
Reel 1pin
(Unit : mm)
VSON008X2030
5
1
8
4
1.4±0.1
0.25
1.5±0.1
0.5
0.3±0.1
0.25 +0.05
−0.04
C0.25
0.6MAX
(0.12)
0.02+0.03
−0.02 3.0±0.1
2.0±0.1
1PIN MARK
0.08 S
S
36/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Marking Diagrams
DIP-T8 (TOP VIEW)
BR93G66B
Part Number Marking
LOT Number
SOP8(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
SOP-J8(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8J(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
SSOP-B8(TOP VIEW) Part Number Marking
LOT Numbe
r
1PIN MARK
VSON008X2030 (TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
MSOP8(TOP VIEW) Part Number Marking
LOT Numbe
r
1PIN MARK
9G66B
9G66B 9 G C B
9 G 6 6 B
9G6
9GC 9G6
6B3
6B3
BG3
37/37
Datasheet
Datasheet
BR93G66-3B
www.rohm.com TSZ02201-09190G100060-1-2
27.AUG.2012 REV.001
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
●Revision History
Date Revision Changes
27.Aug. 2012 001 New Release
Datasheet
Datasheet
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.
Notice
●General Precaution
1) Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2) All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
●Precaution on using ROHM Products
1) Our Products are designed and manufactured for application in ordinar y el ectronic eq uipm ents (such as AV equipment ,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred b y you or third parti es arising from the use of an y ROHM’s Prod ucts for Specific
Applications.
2) ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your o wn responsibilities, adequate
safety measures including but not limited to fail-safe d esign against the physical injur y, damage to any property, which
a failure or malfunction of our Products may cause. T he following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3) Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-produci ng comp onents, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flu x (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4) The Products are not subject to radiation-proof design.
5) Please verify and confirm characteristics of the final or mou nted pro ducts in using the Products.
6) In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding nor mal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7) De-rate Po wer Dissipation (P d) depe nding on Ambient temperature (T a). When used i n sealed area, confirm the actual
ambient temperature.
8) Confirm that operation temperature is within the specified range described in the product specification.
9) ROHM shall not be in any way responsible or liable for fai lure induced under deviant conditio n from what is defined in
this document.
Datasheet
Datasheet
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.
●Precaution for Mountin g / Circuit board design
1) When a hig hly active halog enous (chlor ine, bromine, etc.) flux is used, the residue of flux ma y negatively affect product
performance and reliability.
2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specificati on
●Precautions Regarding Applicatio n Examples and External Circ uits
1) If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2) You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise you r own indepen dent verificatio n and judgmen t in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
●Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please t ake special care under dry con dition (e.g. Grounding of human body / equipment / sol der iron,
isolation from charged objects, setting of Ionizer, friction prevention and te mperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, includin g Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshi ne or condensation
[d] the Products are exposed to high Electrostatic
2) Even under ROHM recommended storage conditi on, solderabilit y of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommen de d storage time period.
3) Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropp ing of a carton.
4) Use Products within the specified time after opening a humidity barrier bag. Baking is required before u s ing Products of
which storage time is exceeding the recommended storage time perio d.
●Precaut ion for Product La bel
QR code printed on ROHM Products label is for ROHM’s internal use only.
●Precaut ion for Dispositi on
When disposing Products pl ease dispose them properly us ing an authorized industry waste company.
●Precaution for Foreign Exchange and Forei gn Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
●Precaution Regarding Intellectual Property Rights
1) All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoi ng information or data will not infringe any int ellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2) No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Datasheet
Datasheet
Notice - Rev.003
© 2012 ROHM Co., Ltd. All rights reserved.
●Other Precautio n
1) The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
2) This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
3) The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
4) In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including b ut not limit ed to, the development of mass-destruction
weapons.
5) The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
