APTDF30H601G
APTDF30H601G – Rev 1 September, 2008
www.microsemi.com 1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Rev e rse Voltage 600 V
TC = 25°C 42
IF(AV) Maximum Average Forward
Current Duty cycle = 50% TC = 90°C 30
IFSM Non-Repetitive Forward Surge Current 8.3ms TJ = 45°C 250
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
5
3
6CR2
CR1
1
2
4
CR4
CR3
10879
All multiple inputs and outputs must be sho rted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
VRRM = 600V
IC = 30A @ Tc = 90°C
Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Low losses
• Low noise switchi n g
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Fast Diode Full Bridge
Power Module
APTDF30H601G
APTDF30H601G – Rev 1 September, 2008
www.microsemi.com 2-4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 30A 1.8 2.2
IF = 60A 2.2
VF Diode Forward Voltage IF = 30A Tj = 125°C 1.5 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA
CT Junction Capacitance VR = 200V 36 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 25
trr Reverse Recovery Time Tj = 125°C 160 ns
Tj = 25°C 35
Qrr Reverse Recovery Charge Tj = 125°C 480 nC
Tj = 25°C 3
IRRM Reverse Recovery Current
IF = 30A
VR = 400V
di/dt = 200A/µs
Tj = 125°C 6 A
trr Reverse Recovery Time 85 ns
Qrr Reverse Recovery Charge 920 nC
IRRM Reverse Recovery Current
IF = 30A
VR = 400V
di/dt=1000A/µs Tj = 125°C
20 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 1.2 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100 °C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 80 g
APTDF30H601G
APTDF30H601G – Rev 1 September, 2008
www.microsemi.com 3-4
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0.00.51.01.52.02.53.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage
I
RRM
vs. Current Rate of Charge
15 A
30 A
60 A
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
-diF/d t (A / µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=400V
Trr vs. Cu rrent Rate o f Ch a r g e
15 A
30 A
60 A
50
75
100
125
150
175
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=400V
Q
RR
vs. Current Rate Charge
15 A
30 A
60 A
0.0
0.5
1.0
1.5
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=400V
Capaci t a nc e vs . Reverse V o ltage
0
25
50
75
100
125
150
175
200
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
10
20
30
40
50
25 50 75 100 125 150 175
Case Temperature (°C)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C
APTDF30H601G
APTDF30H601G – Rev 1 September, 2008
www.microsemi.com 4-4
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,52 2 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231, 474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,4 17 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,26 2
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
