SPL EBxx
Actively Cooled Diode Laser Stack 25
¼
100 W cw, Both Axes Collimated
Preliminary Data
2000-11-06 1
Features
Both axes collimated linear stack, actively
cooled, for cw operation
Highly reliable strained layer InGa(Al)As/GaAs
material with MTTF life time > 10000 h
Low thermal resistance using mini coolers
Sealed housing with desiccating cell
Modular stack design, integration of up to
4 bars
Bar replacement capability for repair /
upgrading
Type Wavelength1)
1) Other wavelengths in the range of 780 nm 980 nm are available on request.
Bar Count (n) Power Ordering Code
SPL EB81-E
SPL EB81-H
SPL EB81-J
SPL EB81-K
808 nm 1
2
3
4
25 W
50 W
75 W
100 W
on request
SPL EB94-E,
SPL EB94-H
SPL EB94-J
SPL EB94-K
940 nm 1
2
3
4
25 W
50 W
75 W
100 W
on request
SPL EB98-E,
SPL EB98-H,
SPL EB98-J,
SPL EB98-K
975 nm 1
2
3
4
25 W
50 W
75 W
100 W
on request
Applications
End pumping of rods and fibers
Direct material processing, soldering
Marking, surface processing
Medical applications
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 “Safety of laser products”.
2000-11-06 2
SPL EBxx
Maximum Ratings (TA=20
°
C mount temperature)
Parameter Symbol Values Unit
min. typ. max.
Number of bars n1…4–
Output power (continuous wave) per bar1) Pcw 2535W
Operating coolant temperature2) Top +10 +40
°
C
Storage temperature2) Tstg -20 +70
°
C
Maximum coolant pressure Pmax 5 bar
1) Standard operating conditions refer to 25 W at 808 nm and 30 W at 940 nm cw collimated optical output power per
bar at 20
°
C using pure water as coolant (resistivity > 0.2 M
W
cm, using particle filter of 30
m
m, and 0.5 l/min flow
rate).
2) Condensation must be avoided (> 10K above dew point).
SPL EBxx
2000-11-06 3
Diode Characteristics (TA=20
°
C mount temperature)
Parameter Symbol Values Unit
min. typ. max.
Emission wavelengths
l
808
940
975
nm
Spectral width (FWHM)1)
Dl
–4–nm
Threshold current at 808 nm Ith 1820A
at 940 nm, and 975 nm 11 13
Differential efficiency (per bar)1)
h
d 0.65 0.75 W/A
Operating current1) Iop 5560A
Operating voltage (per bar)1) Vop –1.8–V
Operating voltage1) Vop –1.8–V
Overall efficiency1)
h
28 32 35 %
Emitting aperture H–n
´
4– mm
W–12–mm
Beam divergence1) 2)
q
^
´ q
||
–15
´
20 20
´
25 mrad
Temperature coefficient of wavelength
Dl
/
D
T 0.27 nm/K
Temperature coefficient of operating current
,
Iop/Iop
,
T–0.5–%/K
Coolant flow rate (per bar)1) dV/dt 0.35 0.5 l/min
Pressure drop1)
,
p 1.5 3.0 bar
1) Standard operating conditions refer to 25 W at 808 nm and 30 W at 940 nm cw collimated optical output power per
bar with water coolant at 20
°
C.
2) Far field divergence refers to half angle at 1/e2relative intensity.
2000-11-06 4
SPL EBxx
Optical Characteristics
(TA=25
°
C mount temperature)
Optical Output Power Popt vs.
Forward Current IF
cw-device, 3 bars
I
OHW00920
00
opt
PV
10 20 30 40 50 60A 0
1
3
2
V
4
5
20
40
60
80
100
W
V
P
SPL EBxx
2000-11-06 5
Package Outlines
Dimensions are specified as follows: mm (inch).
For safety, unpacking, handling, mounting and operating issues, please carefully read our “Notes For
Operation II.
GWOY6035
+
-
2 x ø3 (0.118) H7 / 4 deep
3 (0.118)
16.9 (0.665)
25.5 (1.004)
48 (1.890)
Water IN Water OUT
ø5 (0.197)
ø8 (0.315) / 0.2 deep
Tapped for
O-ring ø6 (0.236) x 1 (0.039)
1) 2)
37 (1.457)
16 (0.630)
ø 32.5 (1.280)
Laser Beam Height
10 (0.394)
M4 (0.157)Contact (+ and -)
M3 (0.118) x 40 (1.575)
3)
16 (0.630)
28 (1.102)
34 (1.339)
6 (0.236)
15 (0.591)
60 (2.362)
30 (1.181)
Negative electrical
terminal
terminal
Positive electrical
Ground plate 0.5 (0.020) tapped
O-ring material EPDM
Alternative DIN 84 - M3 (0.118) x 40 (1.575)
1)
2)
3)
16 (0.630)
Laser beam width
X
56 (2.205)
4 x Screw DIN912 -