ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200
V
IC = 150
A
Die size: 13.5 x 13.5 mm
Doc. No. 5SYA1639-01 Sep 06
• Ultra low loss thin IGBT die
• Highly rugged SPT+ design
• Large bondable emitter area
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200
V
DC collector current IC 150 A
Peak collector current ICM Limited by Tvjmax 300 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 900 V, VCEM ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMY 12M1200
5SMY 12M1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.9 V
Collector-emitter
saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 125 °C 2.1 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 600 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200
200 nA
Gate-emitter threshold voltage VGE(TO) IC = 6 mA, VCE = VGE, Tvj = 25 °C 5 6.2 7 V
Gate charge Qge IC = 150 A, VCE = 600 V, VGE = -15 ..15 V 1530
nC
Input capacitance Cies 10.6
Output capacitance Coes 0.71
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.47 nF
Internal gate resistance RGint 2 Ω
Tvj = 25 °C 190
Turn-on delay time td(on) Tvj = 125 °C 220 ns
Tvj = 25 °C 60
Rise time tr
VCC = 600 V, IC = 150 A,
RG = 6.8 Ω, VGE = ±15 V,
Lσ = 60 nH,
inductive load Tvj = 125 °C 60 ns
Tvj = 25 °C 460
Turn-off delay time td(off) Tvj = 125 °C 530 ns
Tvj = 25 °C 55
Fall time tf
VCC = 600 V, IC = 150 A,
RG = 6.8 Ω, VGE = ±15 V,
Lσ = 60 nH,
inductive load Tvj = 125 °C 75 ns
Tvj = 25 °C 11.2
Turn-on switching energy Eon
VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 6.8 Ω,
Lσ = 60 nH,
inductive load,
FWD: 2x 5SLX 12F1200 Tvj = 125 °C 16.7
mJ
Tvj = 25 °C 9.8
Turn-off switching energy Eoff
VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 6.8 Ω,
Lσ = 60 nH,
inductive load Tvj = 125 °C 15.3 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM ≤ 1200 V 650 A
2) Characteristic values according to IEC 60747 - 9
5SMY 12M1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 3 of 5
Mechanical properties
Parameter Unit
Overall die
L x W 13.5 x 13.5 mm
exposed
front metal
L x W (except gate pad) 12.0 x 12.0 mm
gate pad L x W 1.47 x 1.47 mm
Dimensions
thickness 130 ± 20 µm
front (E) AlSi1 4 µm
Metallization 3) back (C) Al / Ti / Ni / Ag 1.2 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
G
Emitter
1.47±0.05
1.58
1.47±0.05
1.57
11.97
12.33
13.49±0.05
11.96
12.31
13.47±0.05
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
5SMY 12M1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06 page 4 of 5
0
50
100
150
200
250
300
01234
VCE [V]
IC [A]
VGE = 15 V
25 °C
125 °C
0
50
100
150
200
250
300
350
400
450
0 2 4 6 8 10 12 14
VGE [V]
IC [A]
VCE = 20 V
25 °C
125 °C
Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500
IC [A]
Eon, Eoff [mJ]
VCC = 600 V
RG = 6.8 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eon
Eoff
E
sw
[mJ] = 8.2 x E
-4
x I
C2
+ 2.65 x E
-2
x I
C
+ 7.33
0
10
20
30
40
50
60
70
0 10 20 30 40 50
RG [ohm]
Eon, Eoff [mJ]
VCC = 600 V
IC = 150 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eoff
Eon
Fig. 3 Typical switching characteristics vs
collector current Fig. 4 Typical switching characteristics vs
gate resistor
5SMY 12M1200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1639-01 Sep 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg [µC]
VGE [V]
V
CC
= 600 V
VCC = 900 V
IC = 150 A
Tvj = 25 °C
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage
