VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 * Ultra low loss thin IGBT die * Highly rugged SPT+ design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 150 A 300 A 20 V 10 s 150 C 5SMY 12M1200 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 125 C 2.1 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies V V VCE = 1200 V, VGE = 0 V Gate charge 100 Tvj = 125 C IC = 6 mA, VCE = VGE, Tvj = 25 C IC = 150 A, VCE = 600 V, VGE = -15 ..15 V 600 -200 5 6.2 1530 Coes Reverse transfer capacitance Cres 0.47 Internal gate resistance RGint 2 Turn-on delay time td(on) Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC A A 200 nA 7 V nC 10.6 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Output capacitance Rise time Unit 1.9 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ 0.71 VCC = 600 V, IC = 150 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 190 Tvj = 125 C 220 Tvj = 25 C 60 Tvj = 125 C 60 VCC = 600 V, IC = 150 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 460 Tvj = 125 C 530 Tvj = 25 C 55 Tvj = 125 C 75 Tvj = 25 C 11.2 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 6.8 , L = 60 nH, inductive load, FWD: 2x 5SLX 12F1200 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 6.8 , L = 60 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 16.7 Tvj = 25 C 9.8 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 15.3 650 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 2 of 5 5SMY 12M1200 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.5 x 13.5 mm exposed L x W (except gate pad) front metal 12.0 x 12.0 mm 1.47 x 1.47 mm 130 20 m 4 m 1.2 m gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.58 1.47 0.05 1.47 0.05 1.57 11.96 12.31 13.47 0.05 G Emitter 11.97 12.33 13.49 0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 3 of 5 5SMY 12M1200 300 450 VCE = 20 V 400 250 350 25 C 300 125 C IC [A] IC [A] 200 150 250 200 100 150 100 125 C 50 50 25 C VGE = 15 V 0 0 0 1 2 3 4 0 2 4 6 VCE [V] Fig. 1 10 12 14 VGE [V] Typical on-state characteristics Fig. 2 Typical transfer characteristics 70 160 VCC = 600 V RG = 6.8 ohm VGE = 15 V Tvj = 125 C L = 60 nH 140 120 VCC = 600 V IC = 150 A VGE = 15 V Tvj = 125 C L = 60 nH 60 50 100 Eon, Eoff [mJ] Eon, Eoff [mJ] 8 80 Eon Eon 40 30 60 20 Eoff 40 Eoff 10 20 Esw [mJ] = 8.2 x E-4 x I C2 + 2.65 x E-2 x IC + 7.33 0 0 0 100 200 300 400 0 500 Typical switching characteristics vs collector current 20 30 40 50 RG [ohm] IC [A] Fig. 3 10 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1639-01 Sep 06 page 4 of 5 5SMY 12M1200 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 Cies 10 C [nF] VGE [V] VCC = 900 V 10 Coes 1 5 Cres IC = 150 A Tvj = 25 C 0 0.1 0.0 Fig. 5 0.2 0.4 0.6 0.8 Qg [C] 1.0 1.2 Typical gate charge characteristics 1.4 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1639-01 Sep 06