International TER Rectifier HEXFRED Features * Reduced RFI and EMI * Reduced Snubbing Hermetic PD-91796 HFA40HF60C PRELIMINARY Ultrafast, Soft Recovery Diode (ISOLATEDBASE) VR = 600V Ve = 1.56V * Extensive Characterization of Recovery Parameters Qi = 270nC * Surface Mount Description ANODE COMMON ANODE CATHODE di(recy/at = 345 Alus HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings (per Leg) Parameter Max. Units Vr D.C. Reverse Voltage 600 Vv l @ Tce = 100C Continuous Forward Current 30 A lesm @ Tc = 25C | Single Pulse Forward Current @ 150 Pp @ Te = 25C Maximum Power Dissipation 63 Ww Ty Operating Junction and -55 to +150 C Tsta Storage Temperature Range Thermal - Mechanical Characteristics Parameter Typ. Max. Units Rec Junction-to-Case, Single Leg Conducting _ 2.0 C/W Weight 2.6 _ g Note: @ D.C. = 50% rect. wave @ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 8/20/98HFA40HF60C International TOR Rectifier Electrical Characteristics (per Leg) @ Ty = 25C (unless otherwise specified) Parameter Min.| Typ.| Max.| Units Test Conditions Vea Cathode Anode Breakdown Voltage 600 | _ Vv IR = 250UA Vem Max Forward Voltage _ | 1.56 IF = 15A }] {1.92} V |IlF=30A See Fig. 1 | | 1.51 lp = 15A, Ty = 125C lam Max Reverse Leakage Current _ _ 10 HA | Vr = VR Rated See Fig. 2 || 1.0 | mA | Ty = 125C, Va = 480V Cr Junction Capacitance | 24] 36 pF | VR=200V See Fig. 3 Ls Series Inductance |} 28] nH _ | Measured from center of bond pad to end of anode bonding wire Dynamic Recovery Characteristics (per Leg) @ Ty = 25C (unless otherwise specified) Parameter Min.| Typ.| Max. | Units Test Conditions tert Reverse Recovery Time _ 54 88 ns |Ty=25C See Fig. tre | 94 | 140 Ty = 125C 5 le =15A laaMi Peak Recovery Current | 56| 78 A Ty= 25C = See Fig. IRRM2 | 7.8] 11.7 Ty = 125C 6 Vr = 200V Qn Reverse Recovery Charge | 180] 270 nc Ty= 25C = See Fig. Qrre | 435] 650 Ty = 125C 7 di/dt = 200A/Us di(recyw/dt1 | Peak Rate of Fall of Recovery Curren] | 300| 345 Alus Ty=25C = See Fig. di(recyw/dt2 | During tp | 190] 285 Ty = 125C 8 Case Outline and Dimensions SMD-1 aaa See 11.28 (.444) 9.67 (.381) A. L=- 3.60 (.142) 9.38 (.369) | 7 MAX. 4 1 92691 1 |] rose aay 1 73 (.619) week 0.76 (.030) MN. ay | l, q 4.14 (.163) 3.84 (.151) 3x 0-50 (.020) a 3 1 oy + 0.89 (.035) 0.26 (.010 -70 (. MIN. ( ) xX oat (134) (4) Lead Assignments : 5@) 1 - Common Cathode 5.33 (.210) 2, 3 - Anode IR Case Style SMD-1 Dimensions in millimeters and (inches) 2 www.irf.comInternational HFA40HF60C TOR Rectifier 100 <= = = ~ c <= 2 5 4 oO a Ty = 150C 2 o. = ______ o - 5 Ty = 125C @ 0.001 SS SSS a oO " | | | | | 2 Ty= 25C 0.0001 Ll ! l ! l ! ] oe 10 - 0 200 400 600 = Reverse Voltage - Vp (V) Ww . . a Fig. 2 - Typical Reverse Current vs. Reverse a _ Voltage 5 1000 = = & E a oO 1 o Oo & = = 100 wo a wo 1 Oo 0.0 1.0 2.0 3.0 4.0 = 2 Forward Voltage Drop - Vey (V) 3 c& Fig. 1 - Maximum Forward Voltage Drop Ss 10 1 10 100 1000 vs. Instantaneous Forward Current Reverse Voltage - Vp (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0.1 SINGLE Thermal Response (Z tnhJc ) Notes: 1. Duty factor D= t1/to2 2. Peak Ty=P pmx Zthuc + Te 0.01 0.00001 0.0001 0.001 0.01 0.1 1 1, , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zinjc Characteristics www.irf.com 3HFA40HF60C 150 120 90 Tar - (nS) 60 30 Va = 200V Ty = 125C 222 T= 25C 100 . 1000 dig /dt - (A/ps) Fig. 5 - Typical Reverse Recovery vs. di;/dt 1200 lp a Ip = 30A 7 \ o Ip = 15A ~ |, ie VA a. 900 p= 75AS < 7 \ ik a wet" \PAN at oO \ \ \ io or = \Mk oe \ ; Va , eP- 600 eo = oc a \\b? et cc 4 \ at og o o4\\ \ er ea Lo? MAA 4 of P o \ ok oer" oon ae \ \ |g di; /dt - (A/us) Fig. 7 - Typical Stored Charge vs. di;/dt 4 International TOR Rectifier linnM - (A) 100 1000 dig /dt - (A/ps) Fig. 6 - Typical Recovery Current vs. di/dt 10000 Va = 200V Ty= 125C se= Ty= 25C 1000 di(rec)M/dt - (A/ps) 100 10 100 1000 di /dt - (A/ps) Fig. 8 - Typical di(recyy/dt vs. di/dt www.irf.comInternational HFA40HF60C TOR Rectifier REVERSE RECOVERY CIRCUIT 7 Va = 200V ? 9 * 95 Iram | / di(rec)M/dt ) 0.01a$ i 0.75 IpRu L=70pH Dut. dis /at D 1. didt - Rate of change of current 4. Q,, - Area under curve defined by tr dit/dt through zero crossing and InRM ADJUST E? tr X IRRM | fl G | 4 IRFP250 2. IRRM - Peak reverse recovery current Qn = 2 3. trr - Reverse recovery time measured from zero crossing point of negative 5. ditrecyw/dt - Peak rate of change of going Ir to point where a line passing current during tp portion of tr through 0.75 Iprpm and 0.50 Inrw extrapolated to zero current ho v7) Fig. 10 - Reverse Recovery Waveform and Fig. 9 - Reverse Recovery Parameter Test Definitions Circuit International TER Rectifier WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 228, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-lkebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www. irf.com/ Data and specifications subject to change without notice. 8/98 www.irf.com 5