MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE | FS10ASJ-02 OUTLINE DRAWING Dimensions in mm fennel 50:02 1g 2508 | @ qi | Mg | 0 B 1 1 | " |3 Ch Q z | | a a& 0.9MAX. IT _ 05402] | a 2.323.) 08 ol 410 o Cr B OB sa: i) GATE e4V DRIVE . 2 DRAIN Bee eee ener eee e tennant deen ene a <2) SOURCE e Voss 100V o 2 ORAN ers (ON) (MAX) eee ence eee cette 0.19Q : OD eect e eee ence eer e eee etree eet eens 10A O48 @ Integrated Fast Recovery Diode (TYP.) :---- 9g5ns MP-3 APPLICATION Motor control, Lamp control, Solenoid contro! DC-DC converter, etc. MAXIMUM RATINGS (Tec = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Ves = 0V 100 Vv Vass Gate-source voltage Vos = 0V +20 Vv Ib Drain current 10 A lom Drain current (Pulsed) 40 A IDA Avalanche drain current (Pulsed) | L = 100uH 10 A Is Source current 10 A ISM Source current.(Pulsed) 40 A Po Maximum power dissipation 30 Ww Ten Channel temperature ~55 ~ +150 C Tstg Storage temperature ~55 ~ +150 C _ Weight Typical value 0.26 g 2 ~ 546 MITSUBISHI MW. ELECTRICELECTRICAL CHARACTERISTICS (teh = 25C) MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max V (BR) DSS | Drain-source breakdown voltage | ID = {mA, Vos = OV 100 _ _ Vv iess Gate leakage current VGs = +20V, VDS = 0V _ _ +0.1 HA loss Drain current Vbs = 100V, Vas = 0V _ 0.1 mA VGS (th) Gate-source threshold voltage ID = ImA, Vos = 10V 1.0 1.5 2.0 Vv rDS(ON) | Drain-source on-state resistance | ID = 5A, VGS = 10V ~ 0.14 0.19 Q rDS (ON) Drain-source on-state resistance | 1D = 5A, Vas = 4V _ 0.16 0.24 Q Vbs (GN) | Drain-source on-state voltage | ID = 5A, Vas = 10V _ 0.70 0.95 Vv | yts | Forward transfer admittance Ip = 5A, VDS = 5V _ 13 _ Ss Ciss Input capacitance os 800 _ pF Coss Output capacitance VDS = 10V. VGS = OV, f = IMHz _ 125 pF Crss Reverse transfer capacitance _ 45 _ pF td (on) Turn-on delay time ~~ 14 _ ns 5 . 4 tr Rise time __ Vb0 = SOV, ID = 5A, Vas = 10V, RGEN = Rs = 500 5 ns te {off} Turn-off delay time 65 ~ ns tf Fail time ~ 40 _ ns VSD Source-drain voltage i8 = 5A, VGS = OV _ 1.0 1.5 Vv Rth (ch-c)_ | Thermal resistance Channel to case _ _ 4.17 CW tre Reverse recovery time is = 10A, dis/dt = -100A/us _ 95 _ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 50 5 _ 3 = 2 a 40 < 1 tw = 104s 2 10% E z 5 29 30 5 3 1004s B ia <= c 2 & g YO ims a 20 3 10 So Zz toms fo < uu Pa 3 bc = 10 oO atte =25C Single Pulse a 10-1 5 % 50 100 150 200 23 57100 23 57101 23 57102 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V)} OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) = = 10V6V5V 20 Vas = 10V6V5V 10 Vas To = 25C To = 26C Pulse Test Pulse Test <x 16 < 8 2 8 5 42 an) i i iva iia s 5 3 8 B 4 z z =z < 5 4 5 2 av 0 0 0 10 2.0 3.0 4.0 5.0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 ~ 547 ELECTRICCAPACITANCE Ciss, Coss, Crss (pF) DRAIN-SOURCE ON-STATE VOLTAGE V0bs (ON) (V} DRAIN CURRENT Ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C Pulse Test ey tu 5 zt og wy e zs 3 Zz aS 28 <= cr 2 4 6 8 10 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) t Toh = 25C ; Vos = 10V Puise Test oe be ge < a Ww fe ae ze Ba 22 2 4 6 8 10 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 rae = = o < x oO E Coss 2 a Toh = 25C f = MHz Vas = QV 3.57100 23 57101 23 57102 2 3 Crss DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) To = 28C Pulse Test 0 10-12 3 57109 23 57101 23 57102 DRAIN CURRENT ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 Vos = 5V Pulse Test 5 4 3 2 Te = 26C 101 75C 7 125C 5 4 3 2 109 100 2 345 710' 2 345 7102 DRAIN CURRENT ID (A) SWITCHING CHARACTERISTICS (TYPICAL) tdioff} tl Toh = 25C Vpo = 50V Ves = 10V Raen = Aes = 50%: 2 345 7 102 2 345 710! DRAIN CURRENT 10 (A) 2 - 548 MITSUBISHI A ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (on) (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) pss (1C} GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE 108 (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (6p) oss (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 28C ID = 10A 101 4 3 2 yp onan S 10-1 14 1.2 1.0 0.8 0.6 Vos = 20V 0 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V fo = 1/21C Pulse Test ~50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = QV {p= 1mA ~50 0 50 100 450 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE 2th (ch-c) (C/W) MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Vas = 0V Puise Test SCY g B c c 3 rm 16 c Te = 126C 5 8 aw THC 0 25C 0 0.4 0.8 1.2 16 2.0 SOURCE-DRAIN VOLTAGE Vsp (V} THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 Vos = 10V 9 Ip = 1mA g > 3.2 n= We a = 8 2.4 S w as 32 16 OF A st we Ee? 08 a . o 9 50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.1 0.05 0.02 0.01 Pulse 4 10 10423 5710323 5710-223 5710-123 5710023 5710! 23 5710? PULSE WIDTH tw (s) MITSUBISHI 2 - 549 ELECTRIC