YG225C8,N8,D8 (10A) (800V / 10A)
FAST RECOVER Y DIODE Outline drawings, mm [0502]
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Viso
IO
IFSM
Tj
Tstg
Conditions
70
+150
-40 to +150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current **
Reverse recovery time
Thermal resistance
Symbol
VFM
IRRM
trr
Rth(j-c)
Conditions
IFM=2.5A
VR=VRRM
IF=0.1A, IR=0.1A, Irec=0.01A
Junction to case
Max.
1.5
50
0.4
3.5*
Unit
V
µA
µs
°C/W
Square wave, duty=1/2, Tc=95°C
Sine wave 10ms
Rating
800
850
1500
10*
Connection diagram
*Average forward current of centertap full wave connection
JEDEC
EIAJ SC-67
10±0.5
2.54±0.2
0.7±0.2
1.2±0.2
2.7±0.2
0.6
2.7±0.2
4.5±0.2
3.7±0.2
15±0.3
2.7±0.2
13Min
6.3
ø3.2 +0.2
-0.1
+0.2
-0
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Mechanical characteristics
Mounting torque
Approximate weight
N·m
g
0.3 to 0.5
2.3
Recommended torque
** Rating per element
Terminals-to-Case, AC.1min
YG225C8
YG225N8
YG225D8
1
1
1
2
2
2
3
3
3