APT75DL60HJ - Microsemi Power Products Group

APT75DL60HJ

APT75DL60HJ – Rev 1 October, 2012

www.microsemi.com 1-4

Absolute maximum ratings

Symbol Parameter Max ratings Unit

VR Maximum DC reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 600 V

IF(AV) Maximum Average Forward

Current Duty cycle = 50% TC = 80°C 75

IFRM Maximum repetitive forward current limited

by TJmax 8.3ms TJ = 45°C 150

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

VRRM = 600V

IF = 75A @ Tc = 80°C

Application

 Switch mode power supplies rectifier

 Induction heating

 Welding equipment

 High speed rectifiers

Features

 Ultra fast recovery times

 Soft recovery characteristics

 High blocking voltage

 High current

 Low leakage current

 Very low stray inductance

 High level of integration

 ISOTOP® Package (SOT-227)

Benefits

 Outstanding performance at high frequency operation

 Low losses

 Low noise switching

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 RoHS Compliant

ISOTOP®Fast Diode

Full Bridge Power Module

APT75DL60HJ

APT75DL60HJ – Rev 1 October, 2012

www.microsemi.com 2-4

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tj = 25°C 1.6 2

VF Diode Forward Voltage IF = 75A Tj = 150°C 1.5 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR = 600V Tj = 150°C 500 µA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tj = 25°C 100

trr Reverse Recovery Time Tj = 150°C 150 ns

Tj = 25°C 3.6

Qrr Reverse Recovery Charge Tj = 150°C 7.6 µC

Tj = 25°C 0.85

Err Reverse Recovery Energy

IF = 75A

VR = 300V

di/dt = 2000A/µs

Tj = 150°C 1.8 mJ

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case Thermal resistance 0.98

RthJA Junction to Ambient 20 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V

TJ,TSTG Storage Temperature Range -55 175

TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

3.30 (.130)

4.57 (.180)

APT75DL60HJ

APT75DL60HJ – Rev 1 October, 2012

www.microsemi.com 3-4

Typical Performance Curve

Energy losses vs Collector Current

0 25 50 75 100 125 150

(A)

Err (mJ)

= 300V

= -15V

= 150°C

Forward Characteristic of diode

=25°C

=150°C

100

125

150

0 0.4 0.8 1.2 1.6 2 2.4

(V)

(A)

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.2

0.4

0.6

0.8

0.00001 0.0001 0.001 0.01 0.1 1 10

Rectangular Pulse Duration in Seconds

Thermal Impedance (°C/W)

ISOTOP® is a registered trademark of ST Microelectronics NV

APT75DL60HJ

APT75DL60HJ – Rev 1 October, 2012

www.microsemi.com 4-4

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