1C4D05120E Rev. D
C4D05120E
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• SolarInverters
• PowerFactorCorrection
• LEDLightingPowerSupplies
• EVChargingandPowerConversion
Package
TO-252-2 
Part Number Package Marking
C4D05120E TO-252-2 C4D05120
PIN1
PIN2 CASE
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VDC DCBlockingVoltage 1200 V
IFContinuousForwardCurrent 19
9
5
A
TC=25˚C
TC=135˚C
TC=160˚C
IFRM RepetitivePeakForwardSurgeCurrent 26
18 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
IFSM Non-RepetitivePeakForwardSurgeCurrent 46
36 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
IF,Max Non-RepetitivePeakForwardCurrent 400
320 ATC=25˚C,tP=10ms,Pulse
TC=110˚C,tP=10ms,Pulse
Ptot PowerDissipation 97
42 WTC=25˚C
TC=110˚C
TJOperatingJunctionRange -55to
+175 ˚C
Tstg StorageTemperatureRange -55to
+135 ˚C
VRRM= 1200V
IF (TC=135˚C) =9A
Qc  = 27nC
2C4D05120E Rev. D
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.4
1.9
1.8
3VIF=5ATJ=25°C
IF=5ATJ=175°C
IRReverseCurrent 20
40
150
300 μAVR=1200VTJ=25°C
VR=1200VTJ=175°C
QCTotalCapacitiveCharge 27 nC
VR=800V,IF=5A
di/dt=200A/μs
TJ=25°C
C TotalCapacitance
390
27
20
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
ECCapacitanceStoredEnergy 8.0 μJ VR=800V Fig. 7
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252PackageThermalResistancefromJunctiontoCase 1.55 °C/W
Typical Performance
Figure1.ForwardCharacteristics
0
1
2
3
4
5
6
7
8
9
10
00.5 11.5 22.5 33.5 44.5
Figure2.ReverseCharacteristics
0
100
200
300
400
500
600
700
800
900
1000
0500 1000 1500 2000
Current (µA)
Voltage (V)
IF (A)
VF (V)
IR (μA)
VR (V)
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
3C4D05120E Rev. D
Figure3.CurrentDerating
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
30
35
40
45
50
55
60
65
0
5
10
15
20
25
25 50 75 100 125 150 175
Typical Performance
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
0
50
100
150
200
250
300
350
400
450
0.01 0.1 110 100 1000
Figure4.PowerDerating
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
IF(peak) (A)
TC ˚C
PTot (W)
TC ˚C
C (pF)
VR (V)
0
5
10
15
20
25
30
35
0200 400 600 800 1000
VR (V)
Qrr (nC)
4C4D05120E Rev. D
6.0
8.0
10.0
12.0
14.0
Capacitive Energy (uJ)
0.0
2.0
4.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
I
FSM
(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
0
Figure7.TypicalCapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
14
12
10
8
6
4
2
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.TransientThermalImpedance
0.5
0.01
0.01
Thermal Resistance (˚C/W)
T (Sec)
5C4D05120E Rev. D
Recommended Solder Pad Layout
Part Number Package Marking
C4D05120E TO-252-2 C4D05120
TO-252-2
Package Dimensions
PackageTO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
θ
66 C4D05120E Rev. D
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
• C3D Spice models: http://response.cree.com/Request_Diode_model
• SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
RelatedLinks
TTT RIfVVf *+=
Note: Tjis diode junction temperature in degrees Celsius
RT= 0.08 + (Tj* 8.5*10-4)
VT= 0.96 + (Tj* -1.22*10-3)
Note: TJ = Diode Junction Temperature in Degrees Celsius,
valid from 25°C to 175°C
Diode Model
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C2D05120E C4D05120E C4D05120E-TR