FQB22P10TMF085 - FAIRCHILD SEMICONDUCTOR

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FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJX3007R Rev. 1.1.2 1

November 2013

FJX3007R

NPN Epitaxial Silicon Transistor with Bias Resistor

Features

• 100 mA Output Current Capability

• Built-in Bias Resistor (R1 = 22 kΩ, R2 = 47 kΩ)

Application

• Switching, Interface, and Driver Circuits

• Inverters

• Digital Applications in Industrial Segments

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

FJX3007RTF S07 SC70 3L (SOT-323) Tape and Reel

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 50 V

VCEO Collector-Emitter Voltage 50 V

VEBO Emitter-Base Voltage 10 V

ICCollector Current 100 mA

TJJunction Temperature 150 °C

TSTG Storage Temperature -55 to 150 °C

1. Base 2. Emitter 3. Collector

SOT-323

Equivalent Circuit C

Description

Transistors with built-in resistors can be excellent

space- and cost-saving solutions by reducing compo-

nent count and simplifying circuit design.

FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJX3007R Rev. 1.1.2 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

PDPower Dissipation 200 mW

Derate Above TA = 25°C 1.60 mW/°C

RθJA Thermal Resistance, Junction to Ambient 625 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V

BVCEO Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 50 V

ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 0.1 μA

hFE DC Current Gain VCE = 5 V, IC = 5 mA 68

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V

fTOutput Capacitance VCB = 10 V, IE = 0,

f = 1 MHz 3.7 pF

Cob Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz

VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA0.4V

VI(on) Input-On Voltage VCE = 0.3 V, IC = 2 mA 2.5 V

R1Input Resistor 15 22 29 kΩ

R1/R2Resistor Ratio 0.42 0.47 0.52

FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJX3007R Rev. 1.1.2 3

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. Input-On Voltage

Figure 3. Input-Off Voltage Figure 4. Power Derating

0.1 1 10 100

100

1000 VCE = 5V

R1 = 22K

R2 = 47K

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

0.1 1 10 100

0.1

100 VCE = 0.3V

R1 = 22K

R2 = 47K

VI(on)[V], INPUT VOLTAGE

IC[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

100

10k

VCE = 5V

R1 = 22K

R2 = 47K

IC [μA], COLLECTOR CURRENT

VI(off)[V], INPUT O F F V OLTAGE

0 25 50 75 100 125 150 175

100

150

200

250

300

PC[mW], POWER DISSIP ATIO N

Ta[oC], AMBIENT TEMPERATURE

FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJX3007R Rev. 1.1.2 4

Physical Dimensions

Figure 5. 3-LEAD, SC70, EIAJ SC-70, 1.25 MM, WIDE (ACTI VE)

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Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :

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SC-70 3L (SOT-323)

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The datasheet is for reference information only.

Rev. I66

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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

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