MOC205M, MOC206M, MOC207M Small Outline Optocouplers Transistor Output Features Description U.L. Recognized (File #E90700, Volume 2) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting. VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205VM) Closely Matched Current Transfer Ratios Convenient Plastic SOIC-8 Surface Mountable Package Style Minimum BVCEO of 70 V Guaranteed Standard SOIC-8 Footprint, with 0.050" Lead Spacing High Input-Output Isolation of 2500 VAC(rms) Guaranteed Applications Feedback Control Circuits Interfacing and Coupling Systems of Different Potentials and Impedances General Purpose Switching Circuits Monitor and Detection Circuits Schematic Package Outline ANODE 1 CATHODE 2 8 N/C 7 BASE Figure 2. Package Outline N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure 1. Schematic (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output April 2013 Symbol Rating Value Unit Forward Current - Continuous 60 mA Forward Current - Peak (PW = 100 s, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25C Derate above 25C 90 0.8 mW mW/C Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 7.0 V VCBO Collector-Base Voltage 70 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25C Derate above 25C 150 1.76 mW mW/C Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)(1)(2)(3) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25C Derate above 25C 250 2.94 mW mW/C TA Ambient Operating Temperature Range -40 to +100 C Storage Temperature Range -40 to +150 C Emitter IF IF (pk) Detector VCEO Total Device VISO Tstg Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 2 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter VF Input Forward Voltage IF = 10 mA 1.15 1.5 V IR Reverse Leakage Current VR = 6.0 V 0.001 100 A CIN Input Capacitance 18 pF DETECTOR ICEO1 ICEO2 1.0 1.0 Collector-Emitter Dark Current VCE = 10 V, TA = 25C VCE = 10 V, TA = 100C BVCEO Collector-Emitter Breakdown Voltage IC = 100 A 70 BVECO Emitter-Collector Breakdown Voltage IE = 100 A 7.0 Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 CCE 50 nA A 100 V 10 V 7.0 pF COUPLED Collector-Output Current (4) MOC205M MOC206M MOC207M IF = 10 mA, VCE = 10 V VISO Isolation Surge Voltage(1)(2)(3) f = 60 Hz AC Peak, t = 1 minute 2500 RISO Isolation Resistance (2) V = 500 V 1011 CTR VCE (sat) Collector-Emitter Saturation Voltage CISO Isolation Capacitance (2) % 40 63 100 80 125 200 Vac(rms) IC = 2 mA, IF = 10 mA 0.4 V V = 0 V, f = 1 MHz 0.2 pF ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 12) 7.5 s toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 12) 5.7 s tr Rise Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 12) 3.2 s tf Fall Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 12) 4.7 s *Typical values at TA = 25C Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 3 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Electrical Characteristics TA = 25C unless otherwise specified. 1.8 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = -55C 1.3 1.2 TA = 25C 1.1 TA = 100C 1.0 1 10 100 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF - LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.6 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10 mA NORMALIZED TO VCE = 5 V 0.0 0 120 1 2 3 4 5 6 7 8 9 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) Figure 6. Output Current vs. Collector-Emitter Voltage Figure 5. Output Current vs. Ambient Temperature 10000 0.9 VCE = 10 V 1000 IF = 20 mA 0.8 0.7 100 NORMALIZED CTR I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.0 10 IF = 10 m A 0.6 0.5 IF = 5 mA 0.4 0.3 0.2 1 VCE = 5 V, TA = 25C Normalized to: CTR at RBE = Open 0.1 0.0 0.1 10 0 20 40 60 80 1000 RBE - BASE RESISTANCE (k) TA - AMBIENT TEMPERATURE (C) Figure 8. CTR vs. RBE (Unsaturated) Figure 7. Dark Current vs. Ambient Temperature (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 100 100 www.fairchildsemi.com 4 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Typical Performance Curves 1.0 4.0 0.9 3.5 0.8 3.0 0.7 NORMALIZED ton NORMALIZED CTR IF = 20 mA IF = 10 m A 0.6 0.5 IF = 5 mA 0.4 0.3 VCC = 10 V IC = 2 mA RL = 100 NORMALIZED TO : ton AT RBE = OPEN 2.5 2.0 1.5 1.0 0.2 VCE = 0.3 V, TA = 25C Normalized to: CTR at RBE = Open 0.1 0.0 10 0.5 100 0.0 0.01 1000 0.1 1 10 100 RBE - BASE RESISTANCE (k) RBE - BASE RESISTANCE (M) Figure 9. CTR vs. RBE (Saturated) Figure 10. Normalized ton vs. RBE 1.6 1.4 NORMALIZED tofff 1.2 VCC = 10 V IC = 2 mA RL = 100 NORMALIZED TO : tofff AT RBE = OPEN 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE - BASE RESISTANCE (M) Figure 11. Normalized toff vs. RBE TEST CIRCUIT WAVEFORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 12. Switching Time Test Circuit and Waveforms (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 5 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Typical Performance Curves (Continued) 8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 6 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Package Dimensions MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) Marking Information 1 205 V X YY S 3 4 2 6 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `8' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 7 8.0 0.10 2.0 0.05 3.50 0.20 0.30 MAX O1.5 MIN 1.75 0.10 4.0 0.10 5.5 0.05 8.3 0.10 5.20 0.20 0.1 MAX 6.40 0.20 12.0 0.3 O1.5 0.1 User Direction of Feed Dimensions in mm (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 8 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Carrier Tape Specifications MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output Reflow Profile Temperature (C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second maximum Time 25C to Peak Temperature (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 8 minutes maximum www.fairchildsemi.com 9 MOC205M, MOC206M, MOC207M -- Small Outline Optocouplers Transistor Output (c)2005 Fairchild Semiconductor Corporation MOC205M, MOC206M, MOC207M Rev. 1.0.2 www.fairchildsemi.com 10