IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S7030/S7031 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7030/S7031 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S7030/S7031 series has an effective pixel size of 24 x 24 m and is available in image areas ranging from 12.288 (H) x 1.392(V) mm2 (512 x 58 pixels) up to a large image area of 24.576 (H) x 6.000 (V) mm2 (1024 x 250 pixels). Features Applications l Non-cooled type: S7030 series One-stage TE-cooled type: S7031 series l Pixel size: 24 x 24 m l Line, pixel binning l Greater than 90 % quantum efficiency at peak sensitivity wavelength l Wide spectral response range l Low readout noise l Wide dynamic range l MPP operation l High UV sensitivity with good stability l Fluorescence spectrometer, ICP l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection Selection guide Type No. S7030-0906 S7030-0907 S7030-0908 S7030-1006 S7030-1007 S7030-1008 S7031-0906S S7031-0907S S7031-0908S S7031-1006S S7031-1007S S7031-1008S Cooling Non-cooled One-stage TE-cooled Number of total pixels Number of active pixels Active area [mm (H) x mm (V)] 532 x 64 532 x 128 532 x 256 1044 x 64 1044 x 128 1044 x 256 532 x 64 532 x 128 532 x 256 1044 x 64 1044 x 128 1044 x 256 512 x 58 512 x 122 512 x 250 1024 x 58 1024 x 122 1024 x 250 512 x 58 512 x 122 512 x 250 1024 x 58 1024 x 122 1024 x 250 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 24.576 x 6.000 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 24.576 x 6.000 Suitable multichannel detector head C7040 C7041 General ratings Parameter S7030 series S7031 series Pixel size 24 (H) x 24 (V) m Vertical clock phase 2 phases Horizontal clock phase 2 phases Output circuit One-stage MOSFET source follower Package 24 pin ceramic DIP (refer to dimensional outlines) Window *1 Quartz glass AR-coated sapphire *1: Temporary window type (ex. S7030-0906N) is available upon request. (Temporary window is fixed by tape to protect the CCD chip and wire bonding.) 1 CCD area image sensor S7030/S7031 series Absolute maximum ratings (Ta=25 C) Parameter Operating temperature *2 Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage *2: Chip temperature Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V Typ. 20 12 3 0 VRD VRD -8 -8 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V V Max. 1 - Unit MHz - pF - pF pF - pF 18 4 14 V k mW Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 11.5 1 -9 -9 4 -9 4 -9 4 -9 4 -9 4 -9 V V V V V Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Signal output frequency fc 0.25 S703*-0906 750 S703*-0907/-1006 1500 Vertical shift register CP1V, CP2V capacitance S703*-0908/-1007 3000 S703*-1008 6000 S703*-0906/-0907/-0908 110 Horizontal shift register CP1H, CP2H capacitance 180 S703*-1006/-1007/-1008 Summing gate capacitance CSG 30 Reset gate capacitance CRG 30 S703*-0906/-0907/-0908 55 Transfer gate capacitance CTG S703*-1006/-1007/-1008 75 Charge transfer efficiency *3 CTE 0.99995 0.99999 DC output level *4 Vout 14 16 Output impedance *4 Zo 3 Power consumption *4 *5 P 13 *3: Charge transfer efficiency per pixel, measured at half of the full well capacity. *4: The values depend on the load resistance. (Typical, VOD=20 V, Load resistance=22 k) *5: Power consumption of the on-chip amplifier. 2 pF CCD area image sensor S7030/S7031 series E le c tr ic a l a n d o p tic a l c h a r a c te r is tic s ( Ta = 2 5 C , u n le s s o th e r w is e n o te d ) P a r a m e te r S ym bol M in . Typ. M a x. U n it S a tu r a tio n o u tp u t v o lta g e Vsat Fw x Sv V V e r tic a l 240 320 F u ll w e ll c a p a c ity F w k e H o r iz o n ta l * 6 800 1000 C C D n o d e s e n s itiv ity Sv 1 .8 2 .2 V /e D a rk c u rre n t *7 2 5 C 100 1000 DS e /p ix e l/s M PP m ode 0 C 10 100 ( te n ta tiv e d a ta ) R e a d o u t n o is e * 8 Nr 8 16 e rm s L in e b in n in g 1 0 0 0 0 0 1 2 5 0 0 0 D y n a m ic ra n g e * 9 DR A r e a s c a n n in g 30000 40000 P h o to r e s p o n s e n o n - u n ifo r m ity * 1 0 PRNU 3 1 0 % S p e c tr a l r e s p o n s e r a n g e 2 0 0 to 1 1 0 0 nm W h ite s p o ts 0 P o in t d e fe c t * 1 1 B la c k s p o ts 10 B le m is h C lu s te r d e fe c t * 1 2 3 0 C o lu m n d e fe c t * 1 3 * 6 : T h e lin e a r ity is 1 .5 % . * 7 : D a r k c u r r e n t n e a r ly d o u b le s fo r e v e r y 5 to 7 C in c r e a s e in te m p e r a tu r e . * 8 : M e a s u re d w ith a H A M A M AT S U C 4 8 8 0 d ig ita l C C D c a m e ra w ith a C D S c irc u it (s e n s o r te m p e ra tu re : -4 0 C , o p e ra tin g fre q u e n c y : 1 5 0 k H z ). * 9 : D y n a m ic r a n g e ( D R ) = F u ll w e ll/R e a d o u t n o is e * 1 0 : M e a s u r e d a t o n e - h a lf o f th e s a tu r a tio n o u tp u t ( fu ll w e ll c a p a c ity ) u s in g a w h ite flu o r e s c e n t la m p . Photo response non-uniformity (PRNU) [%] Fixed pattern noise (peak to peak) Signal x 100 * 11 : W h ite s p o ts P ix e ls w h o s e d a r k c u rr e n t is h ig h e r th a n 1 k e - a fte r o n e - s e c o n d in te g r a tio n a t 0 C . B la c k s p o ts P ix e ls w h o s e s e n s itiv ity is lo w e r th a n o n e - h a lf o f th e a v e r a g e p ix e l o u tp u t. ( M e a s u r e d w ith u n ifo r m lig h t p r o d u c in g o n e - h a lf o f th e s a tu r a tio n c h a r g e ) * 1 2 : 2 to 9 c o n tig u o u s d e fe c tiv e p ix e ls * 1 3 : 1 0 o r m o r e c o n tig u o u s d e fe c tiv e p ix e ls Spectral transmittance characteristics Spectral response (without window) *14 (Typ. Ta=25 C) 100 90 BACK-THINNED 80 80 TRANSMITTANCE (%) QUANTUM EFFICIENCY (%) 90 70 60 50 40 30 20 (Typ. Ta=25 C) 100 FRONT-SIDED (UV COAT) 400 AR COATED SAPPHIRE 60 50 40 30 20 FRONT-SIDED 10 10 0 200 QUARTZ WINDOW 70 600 800 1000 1200 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0058EA *14: Spectral response with quartz glass or AR-coated sapphire are decreased by the transmittance. Dark current vs. temperature W indow m aterial Type No. W indow material S7030 series Quartz glass * 15 (option: window-less) S7031 series AR-coated sapphire * 16 (option: window-less) (Typ.) 1000 DARK CURRENT (e-/pixel/s) KMPDB0110EA 100 S7032 series (two-stage TE-cooled types, made to order) *15: Resin sealing *16: Hermetic sealing 10 1 AR-coated sapphire * 16 (option: window-less) 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 TEMPERATURE (C) KMPDB0256EA 3 CCD area image sensor S7030/S7031 series Device structure (Conceptual drawing of top view) THINNING 23 21 15 20 13 14 H 1 n 24 2 5 4 3 2 12345 4 BEVEL THINNING V SIGNAL OUT 2 BEVEL 22 12 2 11 3 4 BLANK 4 5 8 2 6 BEVEL n V=58, 122, 250 H=512, 1024 10 9 4 BLANK SIGNAL OUT 6 BEVEL KMPDC0016EB Timing chart Line bininng INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64 58 + 6 (BEVEL): S703*-0906/-1006 63 3.. 62 128 122 + 6 (BEVEL): S703*-0907/-1007 3..126 127 256 250 + 6 (BEVEL): S703*-0908/-1008 3..254 255 2 Tovr P2V, TG 4..530 531 4..1042 1043 Tpwh, Tpws P1H 1 2 532 : S703*-0906/-0907/-0908 1044: S703*-1006/-1007/-1008 3 P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20 : S703*-0906/-0907/-0908 : S703*-1006/-1007/-1008 KMPDC0017EB Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *17: The clock pulses should be overlapped at 50 % of clock pulse amplitude. *18: In case of S7030-0908/-1007, S7031-0908S/-1007S 4 Remark *17 *17 - - Min. 6 *18 10 500 10 500 10 100 5 3 Typ. 8 2000 50 2000 50 - Max. - Unit s ns ns ns % ns ns % ns ns s CCD area image sensor S7030/S7031 series Area scanning: large full well mode INTEGRATION PERIOD (Shutter must be open) Tpwv 1 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64 58 + 6 (BEVEL): S703 *-0906/-1006 4..127 128122 + 6 (BEVEL): S703 *-0907/-1007 4..255 256250 + 6 (BEVEL): S703 *-0908/-1008 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17 D19 D20 : S703 *-0906/-0907/-0908 : S703 *-1006/-1007/-1008 KMPDC0127EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *19: The clock pulses should be overlapped at 50 % of clock pulse amplitude. *20: In case of S7030-0908/-1007, S7031-0908S/-1007S Remark *19 *19 - Min. 6 *20 10 500 10 500 10 100 5 3 Typ. 8 2000 50 2000 50 - Max. - Unit s ns ns ns % ns ns % ns ns s 5 S7030/S7031 series CCD area image sensor Dimensional outlines (unit: mm) S7030-0906/-0907/-0908 S7030-1006/-1007/-1008 WINDOW 16.3 *21 WINDOW 28.6 *21 ACTIVE AREA 12.29 22.9 0.3 22.4 0.3 a 8.2 *21 22.9 0.30 a 2.54 0.13 2.54 0.13 44.0 0.44 1st PIN INDICATION PAD (24 x) 0.5 0.05 S7030-0906: a=1.392 S7030-0907: a=2.928 S7030-0908: a=6.000 S7030-1006: a=1.392 S7030-1007: a=2.928 S7030-1008: a=6.000 KMPDA0046EC S7031-0906S/-0907S/-0908S 4.4 0.44 PHOTOSENSITIVE SURFACE 3.0 4.8 0.49 4.4 0.44 2.35 0.15 3.75 0.44 3.0 PHOTOSENSITIVE SURFACE 2.35 0.15 1st PIN INDICATION PAD 4.8 0.49 34.0 0.34 3.75 0.44 8.2 * 21 22.4 0.30 ACTIVE AREA 24.58 (24 x) 0.5 0.05 KMPDA0047ED S7031-1006S/-1007S/-1008S 21 WINDOW 16.3 * 21 WINDOW 28.6 * 44.0 0.44 42.0 52.0 50.0 0.30 60.0 0.3 PHOTOSENSITIVE SURFACE 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE (24 x) 0.5 0.05 S7031-1006S: a=1.392 S7031-1007S: a=2.928 S7031-1008S: a=6.000 7.7 0.68 7.3 0.63 (24 x) 0.5 0.05 KMPDA0048ED *21: Size of window that guarantees the transmittance in the "Spectral transmittance characteristics" graph 6 6.65 0.63 1.0 4.89 0.15 3.0 7.7 0.68 7.3 0.63 6.65 0.63 4.89 0.15 TE-COOLER 1.0 3.0 TE-COOLER S7031-0906S: a=1.392 S7031-0907S: a=2.928 S7031-0908S: a=6.000 22.9 0.3 19.0 4.0 2.54 0.13 2.54 0.13 34.0 0.34 1st PIN INDICATION PAD 22.4 0.3 21 a 8.2 * 22.9 0.3 4.0 22.4 0.3 19.0 ACTIVE AREA 24.58 a 8.2 *21 ACTIVE AREA 12.29 KMPDA0049EE S7030/S7031 series CCD area image sensor Pin connections Symbol 1 RD 2 OS 3 OD 4 OG 5 SG 6 7 8 P2H 9 P1H 10 IG2H 11 IG1H 12 ISH TG * 22 13 14 P2V 15 P1V 16 17 18 19 20 SS 21 ISV 22 IG2V 23 IG1V 24 RG *22: Isolation gate P2V. S7030 series Function Reset drain Output transistor source Output transistor drain Output gate Summing gate S7031 series Remark (standard operation) Symbol Function RD Reset drain +12 V RL=10 k to 100 k OS Output transistor source OD Output transistor drain +20 V OG Output gate +3 V Same pulse as P2H SG Summing gate CCD horizontal register clock-2 P2H CCD horizontal register clock-2 CCD horizontal register clock-1 P1H CCD horizontal register clock-1 Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) -8 V Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) -8 V Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD TG *22 Same pulse as P2V Transfer gate Transfer gate CCD vertical register clock-2 P2V CCD vertical register clock-2 CCD vertical register clock-1 P1V CCD vertical register clock-1 Th1 Thermistor Th2 Thermistor PTE-coolerP+ TE-cooler+ Substrate (GND) SS Substrate (GND) GND Test point (vertical input source) ISV Test point (vertical input source) Connect to RD Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) -8 V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) -8 V Reset gate RG Reset gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as S7031-0906S/-0907S/-0908S (Typ. Ta=25 C) VOLTAGE (V) 6 4 0 3 -10 2 -20 -30 1 -30 -40 2.0 0 0 3 -10 2 -20 1 1.0 1.5 20 10 4 0.5 30 5 10 0 VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 6 20 5 0 (Typ. Ta=25 C) 7 30 VOLTAGE (V) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT CCD TEMPERATURE (C) 7 S7031-1006S/-1007S/-1008S 0 1 2 3 4 CCD TEMPERATURE (C) Pin No. -40 CURRENT (A) CURRENT (A) KMPDB0178EA KMPDB0179EA S pecifications of bu ilt-in T E-cooler (Typ. R eference data in vacuum condition) Param eter Internal resistance Maxim um current * 23 Sym bol Condition Rint Ta=25 C 24 25 Im ax Tc * =Th * =25 C 24 25 Vm ax Tc * =Th * =25 C Q m ax S7031-0906S/-0907S/-0908S 2.5 1.5 3.8 3.4 S7031-1006S/-1007S/-1008S 1.2 3.0 3.6 5.1 Unit A V W Maxim um voltage M a xim um h eat absorption * 26 Maxim um tem perature 70 70 C of heat radiating side *23: Maxim um current Im ax: If the current greater than this value flows into the therm oelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the dam age threshold value. To protect the therm oelectric cooler and m aintain stable operation, the supply current should be less than 60 % of this m axim um current. *24: Tem perature of the cooling side of therm oelectric cooler *25: Tem perature of the heat radiating side of therm oelectric cooler *26: Maxim um heat absorption Q m ax. This is a theoretical heat absorption level that offsets the tem perature difference in the therm oelectric cooler when the m axim um current is supplied to the unit. 7 S7030/S7031 series CCD area image sensor Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 1 M The characteristics of the thermistor used are as follows. R (298K) = 10 k B (298K / 323K) = 3450 K RESISTANCE R1 = R2 x expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) 100 k 10 k 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EB Precaution for use (Electrostatic countermeasures) Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Multichannel detector heads C7040, C7041 Features l C7040: for S7030 series C7041: for S7031 series l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 20 e-rms l T=50 C (T changes by cooling method.) Input Master start Symbol VD1 VA1+ VA1VA2 VD2 Vp VF ms Master clock mc Supply voltage Value +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7041) +5 Vdc, 2.5 A (C7041) +12 Vdc, 100 mA (C7041) HCMOS logic compatible HCMOS logic compatible, 1 MHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1023E14 Nov. 2007 DN 8