DG408/883 DG409/883 Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers FARRIS SEMICONDUCTOR wD June 1994 Features This Circult Is Processed In Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. ON-Resistance 100Q Maximum (+25C) Low Power Consumption (Pp <11mW) Fast Switching Action - trrans <250ns - toworr(en) <150ns Low Charge Injection Upgrade from DGSO8A/DG509A * TTL, CMOS Compatible Single or Split Supply Operation Applications Data Acquisition Systems * Audio Switching Systems Automatic Testers Description The DG408/883 Single 8-Channe! and DG409/883 Differen- tial 4-Channel monolithic CMOS analog multiplexers are drop-in replacements for the popular DG508A and DG509A series devices. They each include an array of eight analog switches, a TTL/CMOS compatible digital decode circuit for channel selection, a voltage reference for logic thresholds and an ENABLE input for device selection when several mul- tiplexers are present. The DG408/883 and DG409/883 feature lower signal ON resistance (<100Q) and faster switch transition time (trrans <250ns) compared to the DG508A or DGS509A. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG408/883 series are made possible by using a high-voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. Power supplies may be single-ended from +5V to +34V, or split from +5V to t20V. The analog switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with ana- log signals is quite low over a +5V analog input range. * Hi-Rel Systems Ordering Information Sample and Hold Circuits * Communication Systems NUMER eae PACKAGE * Analog Selector Switch DG408AK/e83 | -55Cto+125C | 16 Lead CerDIP DG409AK/883 -55C to+125C | 16 Lead CerDIP Pinouts DG408/883 DG409/883 (CERDIP) (CERDIP) TOP VIEW TOP VIEW wd VJ Ao [i] ig] Ay Ao [i ig] A, EN a 15] Ag EN [2 5] GND vo 4) GND v- BI Ha] v4 s, [4 iia] vs sy ha] Sip 52 s) Ha] Ss Sz [5 12] Soe S3 [6] Hi] 5 Ssa [6 Hi} S35 s, [7] 9] Ss; Sa (Z fo] Sas ols El Sg Da [8 3] Dg 5-4 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright Harris Corporation 1994 Spec Number 512045 File Number 3688DG408/883, DG409/883 Functional Block Diagrams DG408/883 DG409/883 Sy of -0% D Si, of 0% o Dy a beeen dennne : S2 eo }-orfo$ Sea 4 Loto-+ DECODERY tf voc ra worn : DRIVER Sao * A Dg e beoedenece e . oo DECODER/ Sa o-oo Sea OT DRIVER beeen Sewer erwerreern 5v LEVEL 5V LEVEL REF [~] SHIFT REF [|] SHIFT * DIGITAL * * * DIGITAL * INPUT INPUT PROTECTION PROTECTION 6 6 8 86 Ag Ay Az EN Ag Ay EN CMOS ANALOG MULTIPLEXERS Spec Number 512045 -50G408/883, DG409/883 Pin Description - (DG408/883) Pin Description - (DG409/883) PIN SYMBOL DESCRIPTION PIN SYMBOL DESCRIPTION 1 Ao Logic Decode Input (Bit 0, LSB) 1 Ao Logic Decode Input (Bit 0, LSB) 2 EN Enable Input 2 EN Enable Input 3 V- Negative Power Supply Terminal 3 V- NegAtive Power Supply Terminal 4 8, Source (Input) for Channel 1 4 Sta Source (Input) for Channel 1A 5 Se Source (Input) for Channel 2 5 Soa Source (Input) for Channel 2A 6 S3 Source (input) for Channel 3 6 S3a Source (Input) for Channel 3A 7 S, Source (Input) for Channel 4 7 San Source (Input) for Channel 4A 8 D Drain (Output) 8 Da Drain A (Output A) 9 Ss Source (Input) for Channel 8 9 Dg Drain B (Output B) 10 S, Source (Input) for Channel 7 10 Sag Source (Input) for Channel 4B W Se Source (Input) for Channel 6 | Ssp Source (Input) for Channel 3B 12 Ss Source (Input) for Channel 5 12 Sop Source (Input) for Channel 2B 13 V+ Positive Power Supply Terminal (Substrate) 13 Sig Source (Input) for Channel 1B 14 GND Ground Terminal (Logic Common) 14 V+ Positive Power Supply Terminal 15 Aa Logic Decode Input {Bit 2, MSB) 15 GND Ground Terminal (Logic Common) 16 A; Logic Decode Input (Bit 1) 16 Ay Logic Decode Input (Bit 1, MSB)) TRUTH TABLE DG408/883 TRUTH TABLE DG409/883 ON SWITCH Ao EN x 0 NONE 1 1 1 NOTES: 1. Vay Logic 1 22.4V. 2. Vac Logic 0 <0.8V. Ao EN x 0 ON SWITCH NONE 1 Spec Number 512045Specifications DG408/883, DG409/883 Absolute Maximum Ratings Thermal Information VEIOV ccc eee tee ett tnt evrenees +44.0V Thermal Rasistance Oya Bic GNDIOV-.. cence tent e eens 25V CerDIP Package ........... 2c. cease 70CW 20C /W Digital inputs (Note 1)............ (V-) -2V to (V+) + 2V or 20mA, Operating Temperature... 2.2... ee eee -55C to +125C Whichever Occurs First Junction Temperature ......... 00.0. c cc cece eee eens +175C Current (Any Terminal, Except SorD)........... 0000 eee 30mA Continuous Current, SorD 20.0.0... eee cee es 20mA Peak Current, SorD ...... 0... cece cece 40mA (Pulsed 1ms, 10% Duty Cycle) Storage Temperature Range ................. -65C to +125C Lead Temperature (Soldering, 10s) ................00, +300C CAUTION: Stresses above those listed in Absolute Maximum Ratings" may cause permanent damage to the device. This is a strass only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: -55C < Ty < +125C, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUP [| TEMPERATURE MIN MAX | UNITS Drain-Source ON fpsony | Vp = 10V, Var = 0.8V, 1,3 +25C, -55C - 100 Q Resistance Van = 2.4V, Ig = -10mA, Sequence Each Switch On 2 +125C : 125 Q Difference In Drain- Alpsiony | Vp =+10V, Var = 0.8V, 1 +25C - 15 Q Source ON Resistance Van = 2.4V, Ig = -10mA, Between Channels (Note 2) Source OFF Leakage Igor) Vg = t10V, Vp = F10V, 1 425C. -0.5 +0.5 nA Current Ven = OV aon 2 +125C -50 +50 nA & Pad Drain OFF Leakage lo(orF) Vg = t10V, Vp = FI0V, 1 +25C +1 +1 na $ W Current Ven = OV ata oF pG408/883 gs Os 2 +125C -200 +200 nA DG409/883 1 +25C -1 +1 nA 2 +125C -100 +100 nA Drain ON Leakage Ipton) Vg = Vp = t10V, 1 +25C A +1 nA Current Vac= 0.BV, Vay = 2.4V, Ven = 2.4V, 0G408/883 Sequence Each Switch On 2 +125C -200 +200 nA DG409/883 1 +25C 1 +1 nA 2 +125C -150 +150 nA Logic input Current, lan Ven = 0.8V, Va = 2.4V 1,2,9 +25C, +125C, -10 +10 pA Input Voltage High -55C Ven = 0.8V, Va = 15V -10 +10 HA Logic Input Current, Vat Ven = OV, Va = OV 1,2,3 +25C, +125C, 10 +10 HA Input Voltage Low 55C Ven = 2.4V, Va = OV -10 +10 HA Positive Supply l+ga) Ven = OV, Va = OV 1,2,3 +25C, +125C, - 76 HA Current Standby -55C Spec Number 512045 5-7Specifications DG408/883, DG409/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: -55C < Ty < +125C, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUP | TEMPERATURE MIN MAX UNITS Negative Supply lisp) Ven = OV, Va = OV 1,2,3 +25C, +125C, -75 - pA Currant Standby -55C. Positive Supply I+ Ven = 2.4V, Va = OV 1,3 +25C, -55C - 0.5 mA Current 2 +125C - 2 mA Negative Supply I- Ven = 2.4V, Va = OV 1,2,3 +25C, +125C, -0.5 - mA Current -55C TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: -55C < Ty < +125C, V+ = +15V, V- = -15V, Unless Otherwise Specified LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUP | TEMPERATURE MIN MAX UNITS Switching Time of trrans 9, 10, 11 +25C, +125C, - 250 ns Multiplexer -55C Enable Turn ON Time tonyeN) 9,11 +25C, -55C - 150 ns 10 4+125C - 225 ns Enable Turn OFF Time | toreeny 9, 10, 11 +25C, +125C, - 150 ns -55C Break-Before-Make topen 9 +25C 10 - ns Interval TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Table 3 Intentionally Left Blank. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 3), 2, 3, 9, 10, 11 Group A Test Requirements 1, 2,3, 9, 10, 14 Groups C and D Endpoints 1 NOTES: 1. Signals on Sy, Dy, or INy exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. Arpsion) = Toston) MAX - "ps(on) MIN. 3. PDA applies to Subgroup 1 only. Spec Number 512045 5-8DG408/883 SH3XSTdILINN SOTVNY SOWD 1800um x 3320m x 485 + 25m METALLIZATION: Die Characteristics Type: SiA! DIE DIMENSIONS: 3 E nn = wi a S$ <2 - <x~ + ~~ +H ol = az go - Ooo UW . @O.. Oo RED aA CH vn 22220 8 G88 @ E se6 o = 9.1 x 104 Afom? Metallization Mask Layout DG408/883 GND (14) Ag (15) Ay (16) Ao (1) EN (2) V- (3) 8; (4) (10) S7 (9) Sa Spec Number 512045 5-9DG409/883 Die Characteristics DIE DIMENSIONS: 1800pm x 3320um x 485 + 25m METALLIZATION: Type: SiAl Thickness: 12kA + 1kA GLASSIVATION: Type: Nitride Thickness: 8kA + 1kA WORST CASE CURRENT DENSITY: 9.1 x 10* Acm? Metallization Mask Layout DG409/883 Ay NC V- (3) Sta (4) Soa (5) Ssa (6) S4a (7) ROB (14) V+ (13) Sig (12) Sap (11) Sag 10) Spec Number 512045