M29W320DT70N3F - Micron Technology Inc.

January 2018 Rev 131/56

M29W320DT

M29W320DB

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,

Boot Block), 3V Supply Flash memory

Feature summary

Supply Voltage

–V

CC = 2.7V to 3.6V for Program , Erase and

Read

–V

PP =12V for Fast Program (optional)

Access time: 70, 80, and 90 ns

Programming time

– 10µs per Byte/Word typi cal

67 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 64 Main Blocks

Program/Erase controller

– Embedded Byte/Word Program algorithms

Erase Suspend and Resume mo des

– Read and Program another Block duri ng

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

VPP/WP pin for Fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64 bit Security code

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per bloc k

Electronic Signature

– Manufacturer Code: 0020h

– Top Device Code M29W320DT: 22CAh

– Bottom Device Code M29W320DB: 22CBh

RoHS packages available

Automotive Grade Parts Available

FBGA

TSOP48 (N)

12 x 20mm

TFBGA48 (ZE)

www.numonyx.com

Contents M29W320DT, M29W320DB
2/56   
Contents
Summary description  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1 Address Inputs (A0-A20)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
2 Data Inputs/Outputs (DQ0-DQ7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
3 Data Inputs/Outputs (DQ8-DQ14)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
4 Data Input/Output or Address Input (DQ15A–1)   . . . . . . . . . . . . . . . . . . .  12
5 Chip Enable (E)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
6 Output Enable (G)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
7 Write Enable (W)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
8 VPP/Write Protect (V PP/WP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
9 Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . .  13
10 Ready/Busy Output (RB)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
11 Byte/Word Organization Select (BYTE)  . . . . . . . . . . . . . . . . . . . . . . . . . .  14
12 VCC Supply Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
13 VSS Ground  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
Bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1 Bus Read  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
2 Bus Write  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3 Output Disable  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
4 Standby  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
5 Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
6 Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
6.1 Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2 Block Protect and Chip Unprotect  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1 Read/Reset command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
2 Auto Select command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
3 Read CFI Query command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
4 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18

M29W320DT, M29W320DB Contents
 3/56
5 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
6 Unlock Bypass Program command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
7 Unlock Bypass Reset command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
8 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
9 Block Erase command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
10 Erase Suspend command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
11 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
12 Block Protect and Chip Unprotect commands  . . . . . . . . . . . . . . . . . . . . .  21
Status Register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
1 Data Polling Bit (DQ7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
2 Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
3 Error Bit (DQ5)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
4 Erase Timer Bit (DQ3)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
5 Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Part numbering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix A Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Appendix C Block Protection  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
C.1 Programmer Technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  48
C.2 In-System Technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  48
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

List of tables M29W320DT, M29W320DB
4/56   
List of tables
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Bus Operations, BYTE = VIL  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 3. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 5. Commands, 8-bit mode, BYTE = VIL  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 6. Pr ogram, Erase Times and Program, Erase Endurance Cycles. . . . . . . . . . . . . . . . . . . . . 24
Table 7. Status Register Bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . 27
Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Operating an d AC Me as ur em e nt  Con ditio n s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 10. Device Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 11. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 12. Read AC Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 13. Write AC Characteristics, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 14. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 15. Reset/Block Temporary Unprotect AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data. . . . . . . 37
Table 17. TFBG A4 8 6x 8m m  - 6x8 Ball Arr ay , 0.8 m m Pitc h, Package Mechanical Data . . . . . . . . . . 38
Table 18. Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 19. Top Boot Block Addresses, M29W320DT  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 20. Bottom Boot Block Addresses, M29W320DB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 21. Query Structure Overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 22. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 23. CFI Query System Interface Information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 24.  Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 25. Primary Algorithm-Specific Extended Query Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 26. Sec ur ity Co de Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 27. Programmer Technique Bus Operations, BYTE = VIHor VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
Table 28. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

M29W320DT, M29W320DB List of figures
 5/56
List of figures
Figure 1. Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3. TFBGA48 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 8. AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 9. Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10. Write AC Waveforms, Write Enable Controlled  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 11. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 12. Reset/Block Temporary Unprotect AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 13. Accele rate d Pro gr a m Tim in g Wa veforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 14. TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline . . . . . . 37
Figure 15. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline . . . . . . . 38
Figure 16. Programmer Equipment Block Protect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 17. Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 18. In-System Equipment Block Protect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 19. In-System Equi pment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this

document, including without limitation specifications and product descriptions. This document

supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any

information set forth in this document if you obtain the product described herein from any unauthorized

distributor or other source not authorized by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications

unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor

and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron

harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of,

directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting

directly or indirectly from any use of nonautomotive-grade products in automotive applications.

Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and

any customer of distributor/customer (1) state that Micron products are not designed or intended for use

in automotive applications unless specifically designated by Micron as automotive-grade by their

respective data sheets and (2) require such customer of distributor/customer to indemnify and hold

Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees

arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property

damage resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron

component could result, directly or indirectly in death, personal injury, or severe property or

environmental damage ("Critical Applications"). Customer must protect against death, personal injury,

and severe property and environmental damage by incorporating safety design measures into

customer's applications to ensure that failure of the Micron component will not result in such harms.

Should customer or distributor purchase, use, or sell any Micron component for any critical application,

customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors,

and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and

expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability,

personal injury, or death arising in any way out of such critical application, whether or not Micron or its

subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the

Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of

their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS

HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE

RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR

THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate

design, manufacturing, and operating safeguards are included in customer's applications and products to

eliminate the risk that personal injury, death, or severe property or environmental damages will result

from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or

consequential damages (including without limitation lost profits, lost savings, business interruption, costs

related to the removal or replacement of any products or rework charges) whether or not such damages

are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written

agreement executed by Micron's duly authorized representative.

Summary description M29W320DT, M29W320DB

6/56

1 Summary description

The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read,

erased and reprogrammed. These operations can be performed using a single low voltage

(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be

read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to

preserve valid data while old data is erased. Each block can be protected independently to

prevent accide n tal Program or Erase com m and s f rom mo d ifyin g the me m or y. Program an d

Erase commands are written to th e Command Interface of the memory. An on-chip

Program/Erase Controller sim plifies the pro cess of programming or erasing the memory by

takin g care of all of the spe cial operations that are requ ired to upda te the memory co ntent s.

The end of a program or erase operation can be detected and any error conditions

identified. The command set required to control the memory is consistent with JEDEC

standards.

The blocks in the memory ar e asymmetrically arranged, see Figure 4 and Figure 5, Table 19

and Table 20. The first or last 64 Kbytes have been divided into four additional blocks. The

16 Kbyte Boot Block can be used for small initialization code to st art the micr oprocessor, the

two 8 Kbyte Parameter Blocks ca n be used for parameter storage and the remaining 32

Kbyte is a small Main Block where the application may be stored.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, of ten without additional

logic.

The memory is offered in TSOP48 (12 x 20mm), and TFBGA48 (6x8mm, 0.8m m pitch)

packages. In order to meet environmental requirements, Numonyx offers the M29W320D in

ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level

Interconnect is marked on the package and on the inner box label, in compliance with

JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also

marked on the inner box label.

The memory is supplied with all the bit s erased (set to 1).

M29W320DT, M29W320DB Summary description

7/56

Figure 1. Logic Diagram

Table 1. Signal Names

A0-A20 Address Inputs

DQ0-DQ7 Dat a Inputs /Ou tputs

DQ8-DQ14 Data Inputs/Outputs

DQ15A–1 Data Input/Output or Address Input

EChip Enable

GOutput Enable

WWrite Enable

RP Reset/Block Temporary Unprotect

RB Ready/Busy Output

BYTE Byte/Word Organization Select

VCC Supply Voltage

VPP/WP VPP/Write Protect

VSS Ground

NC Not Connected Internally

AI90189B

0-A20

DQ0-DQ1

VCC

M29W320DT

M29W320DB

VSS

DQ15A–1

VPP/WP

BYTE

Summary description M29W320DT, M29W320DB

8/56

Figure 2. TSOP Connections

DQ3

DQ9

DQ2

A6 DQ0

DQ6

A9 DQ13

A17

A10 DQ14

DQ12

DQ10

DQ15A–1

VCC

DQ4

DQ5

DQ7

VPP/WP

AI90190

M29W320DT

M29W320DB

24 25

DQ8

A20

A19

A18

DQ1

DQ11

A12

A13

A16

A11

BYTE

A15

A14 VSS

VSS

M29W320DT, M29W320DB Summary description

9/56

Figure 3. TFBGA48 Connections (Top view through packa ge)

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP

DQ1

DQ9

DQ8

DQ0

A17

DQ2

DQ6

DQ13

DQ14

A10

DQ4

VCC

DQ12

DQ5

A19

A11

DQ7

VSS

A5 A20

A16

BYTE

DQ15

A–1

AI08084

Summary description M29W320DT, M29W320DB

10/56

Figure 4. Block Addresses (x8)

1. Also see Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.

AI90192

16 KByte

3FFFFFh

3FC000h

64 KByte

01FFFFh

010000h

64 KByte

00FFFFh

000000h

M29W320DT

Top Boot Block Addresses (x8)

32 KByte

3F7FFFh

3F0000h

64 KByte

3E0000h

3EFFFFh

Total of 63

64 KByte Blocks

16 KByte

3FFFFFh

3F0000h 64 KByte

64 KByte

003FFFh

000000h

M29W320DB

Bottom Boot Block Addresses (x8)

32 KByte

3EFFFFh

01FFFFh 64 KByte

3E0000h

010000h

Total of 63

64 KByte Blocks

00FFFFh

008000h

8 KByte

3FBFFFh

3FA000h

3F9FFFh

3F8000h

8 KByte

007FFFh

006000h

005FFFh

004000h

M29W320DT, M29W320DB Summary description

11/56

Figure 5. Block Addresses (x16)

1. Also see Appendix Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.

AI90193

8 KWord

1FFFFFh

1FE000h

32 KWord

00FFFFh

008000h

32 KWord

007FFFh

000000h

M29W320DT

Top Boot Block Addresses (x16)

16 KWord

1FBFFFh

1F8000h

32 KWord

1F0000h

1F7FFFh

Total of 63

32 KWord Blocks

8 KWord

1FFFFFh

1F8000h 32 KWord

32 KWord

001FFFh

000000h

M29W320DB

Bottom Boot Block Addresses (x16)

16 KWord

1F7FFFh

00FFFFh 32 KWord

1F0000h

008000h

Total of 63

32 KWord Blocks

007FFFh

004000h

4 KWord

1FDFFFh

1FD000h

1FCFFFh

1FC000h

4 KWord

003FFFh

003000h

002FFFh

002000h

Signal descriptions M29W320DT, M29W320DB

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2 Signal descriptions

See Figure 1: Logic Diagram, and Table 1: Signal Names, for a brief overview of the signals

connected to this device.

2.1 Address Inputs (A0-A20)

The Address Inputs select the cells in the memory array to access during Bus Read

operations. During Bus Write operations they control the commands sent to the Command

Interface of the internal state machine.

2.2 Data Inputs/Outputs (DQ0-DQ7)

The Data I/O outputs the data stored at the selected address during a Bus Read operation.

During Bus Write operations they represent the commands sent to the Command Interface

of the internal state machine.

2.3 Data Inputs/Outputs (DQ8-DQ14)

The Data I/O outputs the data stored at the selected address during a Bus Read operation

when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high

impedance. During Bus Write operations the Command Register does not use these bits.

When reading the Status Register these bits should be ignored.

2.4 Data Input/Output or Address Input (DQ15A–1)

When BYTE is High, VIH, this pin behaves as a Data Input/Output pin ( as DQ8-DQ1 4).

When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the

LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout

the text consider references to the Data Input/Output to include this pin when BYTE is High

and references to the Address Inputs to include this pin when BYTE is Low except when

stated explicitly otherwise.

2.5 Chip Enable (E)

The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to

be performed. When Chip Enable is High, VIH, all other pin s ar e ign or ed .

2.6 Output Enable (G)

The Output Enable, G, controls the Bus Read operation of the memo ry.

M29W320DT, M29W320DB Signal descriptions

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2.7 Write Enable (W)

The Wr ite Enable, W, controls the Bus W rite operation of the m emory’ s Command Interface.

2.8 VPP/Write Protect (VPP/WP)

The VPP/Write Protect pin provides two functions. The VPP function allows the memory to

use an external high voltage power supply to reduce the time required for Unlock Bypass

Program operations. The Write Protect function provides a hardware method of protecting

the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected.

When VPP/Write Protect is Lo w , VIL, the memory protects the 16 Kbyte Boot Block; Program

and Erase operations in this block are ignored while VPP/Write Protect is Low.

When VPP/Write Protect is High, VIH, the memory rever ts to the prev iou s pr ote c t ion status

of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the

16 Kbyte Boot Block unless the block is protected using Block Protection.

When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock

Bypass mode. When VPP/Write Protect returns to V IH or VIL normal operation resumes.

During Unlock Byp ass Program operations the mem ory draws IPP from the pin to supply the

programming circuits. See the description of the Unlock Bypass command in the Comm and

Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than

tVHVPP, see Figure 13.

Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the

memory may be left in an indeterminate state.

A 0.1µF capacitor should be connected between the VPP/Write Protect pin and the VSS

Ground pin to decouple the current surges from the power supply. The PCB track wid ths

must be sufficient to carry the currents required during Unlock Bypass Program, IPP.

2.9 Reset/Block Temporary Unprotect (RP)

The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the

memory or to temporarily unprotect all Blocks that have been protected.

Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect

even if RP is at VID.

A Hardware Reset is achieved by hold ing Reset/Block Temporary Unprotect Lo w, VIL, for at

least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be

ready for Bus Read and Bus Write opera tion s after tPHEL or tRHEL, whichever occurs last.

See the Ready/Busy Output section, Table 15 and Figure 12, for more details.

Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program

and Erase operations on all blocks will be possible. The transition from VIH to VID must be

slower than tPHPHH.

Signal descriptions M29W320DT, M29W320DB

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2.10 Ready/Busy Output (RB)

The Ready/Busy pin is an open-drain outpu t tha t can be used to identify when th e device is

performing a Program or Erase operation. During Pro gram or Erase operatio ns Ready/Busy

is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and

Erase Suspend mode.

Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect

even if RP is at VID.

After a Ha rdware Reset, Bus Read and Bus W rite operations cannot b egin until Ready/Busy

becomes high-impedance. See Table 15 and Figure 12.

The use of an open-drain outp ut allows the Ready/Busy pins from se veral memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

2.11 Byte/Word Organization Select (BYTE)

The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus

modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in

x8 mode, when it is High, VIH, the memory is in x16 mode.

2.12 VCC Supply Voltage

VCC provides the power supply for all operations (Read, Program and Erase).

The Command Interface is disa bled when the VCC Supply Voltage is less than the Lockout

Voltage, VLKO. This preven ts Bus Write operations from accidentally damaging the data

during power up, power down an d power surges. If the Program/Erase Controller is

programming or e rasing during th is time then the oper ation aborts a nd the memory conten ts

being altered will be invalid.

A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS

Ground pin to decouple the current surges from the power supply. The PCB track wid ths

must be suf f ici ent to car ry the cur rents required during Program and Era se op erat ions, ICC3.

2.13 VSS Ground

VSS is the reference for all voltage measurements.

M29W320DT, M29W320DB Bus operations

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3 Bus operations

There are five standard bus operations that control the device. These ar e Bus Read, Bus

Write, Output Disable, Standby and Automatic Standby. See Table 2 and Table 3, Bus

operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write

Enable are ignored by the memory and do not affect bus operations.

3.1 Bus Read

Bus Read operations read from the memory cells, or specific registers in the Command

Interface. A valid Bus Read operation involves setting the desired address on the Address

Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write

Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 9: Read Mode

AC Waveforms, and Table 12: Read AC Characteristics, for details of when the output

becomes valid.

3.2 Bus Write

Bus Write oper ations write to the Command Interface. A valid Bus Write operat ion begins by

setting the desired address on the Address Inputs. The Address Inputs are latched by the

Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs

last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of

Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,

during the whole Bus Write operation. See Figure 10 and Figure 11, Write AC waveforms,

and Table 13 and Table 14, Write AC Characteristics, for details of th e tim i ng requ ire me n ts.

3.3 Output Disable

The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.

3.4 Standby

When Chip Enable is High, VIH, the memory enter s Stan db y mo d e an d th e Da ta

Inputs/Outpu ts pins are placed in the high -impedance st ate. To reduce the Supply Current to

the Standby Supply Curre nt , ICC2, Chip Enable should be held within VCC ± 0.2V. For the

Standby current level see Table 11: DC Characteristics.

During program or erase operations the memory will continue to use the Program/Erase

Supply Current, ICC3, for Program or Er ase operations until the operation completes.

3.5 Automatic Standby

If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or

more the memory ente rs Automatic S tand by where the internal Supply Cu rrent is reduced to

the Standby Supply Curre nt , ICC2. The Data Inputs/Outputs will still output data if a Bus

Read operation is in progress.

Bus operations M29W320DT, M29W320DB

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3.6 Special bus operations

Additional bus operations can be performed to read the Electronic Signature an d also to

apply and remove Block Protection. These bus operations are intended for use by

programming equipment and are not usually used in applications. They require VID to be

applied to some pins.

3.6.1 Electronic Signature

The memory has two codes, the manufacturer code and the device code, that can be read

to identify the memory. These codes can be read by applying the signals listed in Table 2

and Table 3, Bus Operations.

3.6.2 Block Protect and Chip Unprotect

Each block can be separately pr ot ec ted ag ain st ac cid en tal Program or Eras e. The who le

chip can be unprotected to allow the data inside the blocks to be changed.

Block Protect and Chip Unprotect operations ar e described in Appendix C: Bl ock Protection.

Ta ble 2. Bus Operations, BYTE = VIL(1)

Operation E G W Address Inputs

DQ15A–1, A0-A20

Data Inputs/ Outp uts

DQ14-DQ8 DQ7-DQ0

Bus Read VIL VIL VIH Cell Address Hi-Z Data Output

Bus Write VIL VIH VIL Command Address Hi-Z Data Input

Output Disable X VIH VIH X Hi-Z Hi-Z

Standby VIH X X X Hi-Z Hi-Z

Read Manufacturer

Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID,

Others VIL or VIH Hi-Z 20h

Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL,

A9 = VID, Others VIL or VIH Hi-Z CAh (M29W320DT)

CBh (M29W320DB)

1. X = VIL or VIH.

Ta ble 3. Bus Operations, BYTE = VIH(1)

Operation E G W Address Inputs

A0-A20 Data Inputs/Outputs

DQ15A–1, DQ14-DQ0

Bus Read VIL VIL VIH Cell Address Data Output

Bus Write VIL VIH VIL Command Address Data Input

Output Disable X VIH VIH XHi-Z

Standby VIH XXX Hi-Z

Read Manufacturer

Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID,

Others VIL or VIH 0020h

Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL, A9 = VID,

Others VIL or VIH

22CAh (M29W320DT)

22CBh (M29W320DB)

1. X = VIL or VIH.

M29W320DT, M29W320DB Command Interface

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4 Command Interface

All Bus Write operations to the memory are interpreted by the Command Interface.

Commands consist of one or more sequential Bus Write operations. Failure to observe a

valid sequence of Bus Write operations will result in the memory returning to Read mode.

The long command sequences are imposed to maximize data security.

The address used for the commands changes depending on whether the memory is in 16-

bit or 8-bit m ode. See either Table 4, or Table 5, depending on the confi guration that is bei ng

used, for a summary of the commands.

4.1 Read/Reset command

The Read/Reset command returns the memory to its Read mode where it behaves like a

ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register.

Either one or three Bus Write operations can be used to issue the Read/Reset command.

The Read/Reset Command can be issued, between Bus Write cycles before the start of a

program or erase operation, to return the device to read mode. Once the program or erase

operation has started the Read/Reset command is no longer accepted. The Read/Reset

command will not abort an Erase operation when issued while in Erase Suspend.

4.2 Auto Select command

The Auto Select comma nd is used to read the Man ufacturer Code, the Device Code and the

Block Protection Status. Three consecutive Bus Write operations are required to issue the

Auto Select command. Once the Auto Select command is issued the memory remains in

Auto Select mode until a Read/Reset command is issu ed. Read CFI Query and Read/Reset

commands are accepted in Auto Select mode, all other commands are ignored.

From the Auto Select mode the Manufacturer Code can be read using a Bus Read

operation with A0 = VIL and A1 = V IL. The ot her addr ess bit s may b e set to either VIL or VIH.

The Manufacturer Code for Numonyx is 0020h.

The Device Code can be read using a Bu s Read ope ratio n with A0 = VIH and A1 = VIL. Th e

other addre ss bits may be set to eith er VIL or VIH. The Device Code for the M29W320DT is

22CAh and for the M29W320DB is 22CBh.

The Block Protection Status of each block can be read using a Bus Read operation with A0

= VIL, A1 = VIH, and A12-A20 specifying the address of the block. The other address bits

may be set to either VIL or VIH. If the addressed block is protected then 01h is output on

Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.

Command Interface M29W320DT, M29W320DB

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4.3 Read CFI Query command

The Read CFI Query Command is used to read data from the Common Flash Interface

(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or

when the device is in Autoselected mode.

One Bus Write cycle is required to issue the Read CFI Query Command. Once the

command is issued subsequent Bus Read operations read from the Common Flash

Interface Memory Area.

The Read/Reset command must be issued to return the device to the previous mode (the

Read Array mode or Autoselected mode). A second Read/Reset command would be

needed if the device is to be put in the Read Array mode from Autoselected mode.

See Appendix B: Common Flash Interface (CFI), Table 21, Table 22, Table 23, Table 24,

Table 25 and Table 26 for details on the information contained in the Common Flash

Interface (CFI) memory area.

4.4 Program command

The Program command can be used to program a value to one address in the memory

array at a time. The com m an d req uir es four Bus Write opera tion s, the fin al writ e op era tion

latches the address and data in the intern al state machine and starts the Program/Erase

Controller.

If the address falls in a protected block then the Program command is ignored, the data

remains unchanged. The Status Register is never read and no error condition is given.

During the program operation the memory will ignore all commands. It is not possible to

issue any command to abort or pause the operation. Typical program times are given in

Table 6. Bus Read operations during the program operation will output the Status Register

on the Data Inpu ts/Outputs. See the section on the Status Register for more details.

After the program operation has completed the memory will return to the Read mode, unless

an error has occurred. When an error occurs the memo ry will continue to output the Status

Read mode.

Note that the Program co mmand canno t chang e a bit set at ’0’ b ack to ’1’. One of the Erase

Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.

4.5 Unlock Bypass command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program

command to program the memor y. When the cycle time to the device is long (as with some

EPROM programmers) considerable time saving can be made by using these commands.

Three Bus Write operations are required to issue the Unlock Bypass command.

Once the Unlock Bypass command has been issued the memory will only accept the Unlock

Bypass Program command and the Unlock Bypass Reset command. The memory can be

read as if in Read mode.

The memory offers accelerated program operations through the VPP/Write Protect pin.

When the system asserts VPP on the VPP/Write Protect pin, the memory automatically

enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass

M29W320DT, M29W320DB Command Interface

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program command sequence. The memory uses the higher voltage on the VPP/Write

Protect pin, to accelerate the Unlock Bypass Program operation.

Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the

memory may be left in an indeterminate state.

4.6 Unlock Bypass Program command

The Unlock Bypa ss Program command can be use d to program one address in the memory

array at a time. The command requires two Bus Write operations, the final write operation

latches the address and data in the intern al state machine and starts the Program/Erase

Controller.

The Program operation u sing the Unlock Bypass Program command behaves identically to

the Program operation using the Program command. The operation cannot be aborted, the

Status Register is read and protected blocks cannot be programmed. Errors must be reset

using the Read/Reset command , which leaves the device in Unlock Bypass Mode. See the

Program command for details on the behavior.

4.7 Unlock Bypass Reset command

The Unlock Bypass Reset command can be used to return to Read/Reset mode from

Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass

Reset command. Read/Reset command does not exit from Unlock Byp ass Mode.

4.8 Chip Erase command

The Chip Erase command can be used to erase the entire chip. Six Bus Write operations

are required to issue the Chip Erase Command and start the Program/Erase Controller.

If any blocks are protected then these are ignored and all the other blocks are erased. If all

of the blocks are protected the Chip Erase operation appears to start but will terminate

within about 10 0µs, leaving the d ata unchanged. No error condition is given when pro tected

blocks are ignored.

During the erase operation the memory will ignore all commands, including the Erase

Suspend command. It is not possible to issue any command to abort the operation. Typical

chip erase times ar e giv en in Table 6. All Bus Read operations during the Chip Erase

operation will output the Status Register on the Dat a Inputs/Output s. See the section on the

Status Register for more details.

After the Chip Erase operation has completed the memory will return to the Read Mode,

unless an error has occurred. When an error occurs the memory will continue to output the

Status Register. A Read/Reset command must be issued to reset the error condition and

return to Read Mode.

The Chip Erase Command set s all of the bi ts in unprotected blocks of the memory to ’1’. All

previous data is lost.

Command Interface M29W320DT, M29W320DB

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4.9 Block Erase command

The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write

operations are requir ed to select the first block in the list. Each ad ditional block in the list can

be selected by repeating the sixth Bus Write operation using the address of the additional

block. The Block Erase operation starts the Program/Erase Controller about 50µs after the

last Bus Write operation. Once the Prog ra m/Er ase Controller starts it is not possible to

select any more blocks. Each additional block must therefore b e selected within 50µs of the

last block. The 50 µs timer rest art s when an ad ditional block is selected . The Status Register

can be read after the sixth Bus Write operation. See the Status Register section for details

on how to identify if the Program/Erase Controller has started the Block Erase operation.

If any selected blocks are protected then these are igno red and all the othe r selected blocks

are erased. If all of the selected blocks are protected the Block Erase operation appears to

start but will terminate within about 100µs, leaving the data unchanged. No error condition is

given when protected blocks are ignored.

During the Block Erase operation the memory will ignore all commands except the Erase

Suspend command . T yp ical block erase tim es are given in Table 6. All Bus Read operations

during the Block Erase operation will output the S tatus Register on the Data Inputs/Output s.

See the section on the Status Register for mor e details.

After the Block Erase operation has completed the memory will return to the Read Mode,

unless an error has occurred. When an error occurs the memory will continue to output the

Status Register. A Read/Reset command must be issued to reset the error condition and

return to Read mode.

The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All

previous data in the select ed bl oc ks is lost.

4.10 Erase Suspend command

The Erase Suspend Command may be used to temporarily suspen d a Block Erase

operation and return the memor y to Read mode. The command requires one Bus Write

operation.

The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to

Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase

Controller has stopped the memory will be set to Read mode and the Erase will be

suspended. If the Erase Susp end command is issued d uring the period when the memor y is

waiting for an additional block (b efore the Program/Erase Controller starts ) then the Erase is

suspended immediately and will start immediately when the Erase Resume Command is

issued. It is not possible to select any further blocks to erase af ter the Erase Resume.

During Erase Suspend it is possible to Read and Program cells in blocks that are not being

erased; both Read and Program operations behave as normal on these blocks. If any

attempt is made to program in a protected block or in the suspended block then the Program

command is ignored and the data remains unchanged. The Status Register is not read and

no error condition is given. Reading from blocks that are being erased will output the S t atus

It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypa ss co mmands

during an Erase Suspend. The Read/Reset command must be issued to return the device to

Read Array mode before the Resume command will be accepted.

M29W320DT, M29W320DB Command Interface

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4.11 Erase Resume command

The Erase Resume command must be used to restart the Program/Erase Controller after an

Erase Suspend. The device must be in Read Array mode before the Resume command will

be accepted. An erase can be suspended and resumed more than once.

4.12 Block Protect and Chip Unprotect commands

Each block can be separately pr ot ec ted ag ain st ac cid en tal Program or Eras e. The who le

chip can be unprotected to allow the data inside the blocks to be changed.

Block Protect and Chip Unprotect operations ar e described in Appendix C: Bl ock Protection.

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Table 4. Commands, 16-bit mode, BYTE = VIH(1)(2)

Command

Length

Bus Write Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset(3) 1X F0

3 555 AA 2AA 55 X F0

Auto Select(4) 3 555 AA 2AA 55 555 90

Program(5) 4 555 AA 2AA 55 555 A0 PA PD

Unlock Bypass(6) 3 555 AA 2AA 55 555 20

Unlock Bypass

Program(5) 2X A0PAPD

Unlock Bypass

Reset(7) 2X 90 X 00

Chip Erase(5) 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase(5) 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Erase Suspend(8) 1X B0

Erase Resume(9) 1X 30

Read CFI Query(10) 155 98

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal.

2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15

are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is

ignored during algorithm execution.

4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.

5. After Program, Unlock Bypass Program, Chip Erase, Block Erase commands read the Status Register until the

Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase

Command with additional Bus Write Operations until Timeout Bit is set.

6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.

7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.

8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program

commands on non-erasing blocks as normal.

9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the

Program/Erase Controller completes and the memory returns to Read Mode.

10. CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.

M29W320DT, M29W320DB Command Interface

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Table 5. Commands, 8-bit mode, BYTE = VIL(1)(2)

Command

Length

Bus Write Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset(3) 1X F0

3 AAA AA 555 55 X F0

Auto Select(4) 3 AAA AA 555 55 AAA 90

Program(5) 4 AAA AA 555 55 AAA A0 PA PD

Unlock Bypass(6) 3 AAA AA 555 55 AAA 20

Unlock Bypass

Program(5) 2 X A0 PA PD

Unlock Bypass

Reset(7) 2X 90 X 00

Chip Erase(5) 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase(5) 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Erase Suspend(8) 1X B0

Erase Resume(9) 1X 30

Read CFI Query(10) 1AA 98

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal.

2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15

are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is

ignored during algorithm execution.

4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.

5. After a Program, Unlock Bypass Program, Chip Erase, Block Erase command read the Status Register until the

Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase

Command with additional Bus Write Operations until Timeout Bit is set.

6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.

7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.

8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program

commands on non-erasing blocks as normal.

9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the

Program/Erase Controller completes and the memory returns to Read Mode.

10. The CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.

Command Interface M29W320DT, M29W320DB

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Table 6. Program, Erase Times and Program, Erase Endurance Cycles

Parameter Min Typ(1)(2) Max(2) Unit

Chip Erase 40 200(3) s

Block Erase (64 KBytes) 0.8 6(4) s

Erase Suspend Latency Time 15 25(4) µs

Program (Byte or Word) 10 200(3) µs

Accelerated Program (Byte or Word) 8 150(3) µs

Chip Program (Byte by Byte) 40 200(3) s

Chip Program (Word by Word) 20 100(3) s

Program/Erase Cycles (per Block) 100,000 cycles

Data Retention 20 years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

M29W320DT, M29W320DB Status Register

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5 Status Register

Bus Read operations from any address always read the Status Register during Program

and Erase operations. It is also read du ring Erase Suspe nd when an add ress within a block

being erased is accessed.

The bits in the Status Register are summarized in Table 7: Status Register Bits.

5.1 Data Polling Bit (DQ7)

The Data Polling Bit can be used to identify whether the Program/Erase Controller has

successfully completed its operation or if it has responded to an Erase Suspend. The Data

Polling Bit is output on DQ7 when the Status Register is read.

During Program operations the Data Polling Bit outputs the complement of the bit being

programmed to DQ7. After successful completion of the Program operation the memory

returns to Read mode and Bus Read operations from the address just programmed output

DQ7, not its complement.

During Erase operations the Dat a Polling Bit outputs ’0’, the complement of the erased state

of DQ7. After successful completion of the Erase operation the memory returns to Read

Mode.

In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation

within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the

Program/Erase Controller has suspended the Erase operation.

Figure 6: Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A

Valid Add ress is the address being programmed or an address within the block being

erased.

5.2 Toggle Bit (DQ6)

The Toggle Bit can be used to identify whether the Program/Erase Controller has

successfully completed its operation or if it has respon ded to an Erase Suspend. The Toggle

Bit is output on DQ6 when the Status Register is read.

During Program and Erase op erations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with

successive Bus Read operations at any address. After successf ul com p let ion of the

operation the memory returns to Read mode.

During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block

being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has

suspended the Erase operation.

If any attempt is made to erase a protected block, the operation is aborted, no error is

signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a

protected block or a suspended block, the operation is aborted, no error is signalled and

DQ6 toggles for ap p ro xim at ely 1µs .

Figure 7: Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.

Status Register M29W320DT, M29W320DB

26/56

5.3 Error Bit (DQ5)

The Error Bit can be used to identify errors detected by the Program/Erase Controller. The

Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the

correct data to the memory. If the Error Bit is set a Read/Reset command must be issued

before other commands are issued. The Error bit is output on DQ5 when the S t atus Register

is read.

Note that the Prog ra m command cann ot cha nge a b it se t to ’0’ b ack to ’1’ and attemp tin g to

do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.

One of the Erase commands must be used to set all the bits in a block or in the whole

memory from ’0’ to ’1’.

5.4 Erase Timer Bit (DQ3)

The Erase Timer Bit can be used to identify the start of Program/Erase Controller oper ation

during a Block Erase command. Once the Program/Erase Controller starts erasing the

Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit

is set to ’0’ and additional blocks to be erased may be written to the Command Interface.

The Erase Timer Bit is output on DQ3 when the Status Register is read.

5.5 Alternative Toggle Bit (DQ2)

The Alternative Toggle Bit can be used to monitor the Program/Erase controller during

Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is

read.

During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,

etc., with successive Bus Read operations from addresses within the blocks being erased.

A protected block is treated the sa me as a block not being erased. Once the operation

completes the memory returns to Read mode.

During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with

successive Bus Read operations from addresses within the blocks being erased. Bus Read

operations to addresses within blocks not being erased will output the memory cell data as if

in Read mode.

After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be

used to identify which block or blocks have caused the error. The Alternative Toggle Bit

changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses

within blocks that have not erased correctly. The Alternative Toggle Bit does not change if

the addresse d blo ck has er as ed cor re ctly.

M29W320DT, M29W320DB Status Register

27/56

Figure 6. Data Polling Flowchart

Table 7. Status Register Bits(1)

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB

Program Any Address DQ7 Toggle 0 – – 0

Program During Erase

Suspend Any Address DQ7 Toggle 0 – – 0

Program Error Any Address DQ7 Toggle 1 – – 0

Chip Erase Any Address 0 Toggle 0 1 Toggle 0

Block Erase before

timeout Erasing Block 0 Toggle 0 0 To ggle 0

Non-Erasing Block 0 Toggle 0 0 No Toggle 0

Block Erase Erasing Block 0 Togg le 0 1 Toggle 0

Non-Erasing Block 0 Toggle 0 1 No Toggle 0

Erase Suspend Erasing Block 1 No Toggle 0 – Toggle 1

Non-Erasing Block Data read as normal 1

Erase Error Good Block Address 0 Toggle 1 1 No Toggle 0

Faulty Block Address 0 Toggle 1 1 Toggle 0

1. Unspecified data bits should be ignored.

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

at VALID ADDRESS

FAIL PASS

AI90194

DQ7

DATA YES

YES

DQ5

= 1

DQ7

DATA YES

Status Register M29W320DT, M29W320DB

28/56

Figure 7. Data Toggle Flowchart

READ DQ6

START

READ DQ6

TWICE

FAIL PASS

AI01370C

DQ6

TOGGLE NO

YES

DQ5

= 1

YES

DQ6

TOGGLE

READ

DQ5 & DQ6

M29W320DT, M29W320DB Maximum rating

29/56

6 Maximum rating

Stressing the device above the rating listed in the Absolute Maximum Ratings table may

cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions

for extended periods may affect device reliability. These are stress ratings only and

operation of the de vice at th ese or an y ot he r con d itio ns abo ve thos e ind i ca te d in th e

Operating sections of this specification is not implied. Refer also to the Numony x SURE

Program and other relevant quality docum ents.

Table 8. Absolute Maximum Ratings

Symbol Parameter Min Max Unit

TBIAS Temperature Under Bias –50 125 °C

TSTG Storage Temper ature –65 150 °C

VIO Input or Output Voltage(1)(2)

1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.

2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.

–0.6 VCC +0.6 V

VCC Supply Voltage –0.6 4 V

VID Identification Voltage –0.6 13.5 V

VPP Program Voltage –0.6 13.5 V

DC and AC parameters M29W320DT, M29W320DB

30/56

7 DC and AC parameters

This section summa riz es th e op e ratin g me as ur em e nt con dit ions , an d the DC an d AC

characterist ics of th e de vice. The parameters in the DC and AC characteristics Tables that

follow, are derive d from te sts performed under the Measureme nt Co nd itions su mma rized in

Table 9: Operating and AC Measurement Conditions. Designers should check that the

operating conditions in their circuit match the operating conditions when relying on the

quoted pa rameters.

Figure 8. AC Measurement I/O Waveform

Table 9. Operating and AC Measurement Conditions

Parameter

M29W320D

Unit70(1) 7A 80 90

Min Max Min Max Min Max Min Max

VCC Supply Voltage 2.7 3.6 2.7 3.6 2.5 3.6 2.7 3.6 V

Ambient Operating

Temperature –40 85/125 –40 85 –40 125 –40 85 °C

Load Capacitance (CL)30303030pF

Input Rise and Fall Times 10 10 10 10 ns

Input Pulse Voltages 0 to VCC 0 to VCC 0 to VCC 0 to VCC V

Input and Output Timing Ref.

Voltages VCC/2 VCC/2 VCC/2 VCC/2 V

1. 85 °C is for industrial part code; 125 °C is for the Autograde part.

AI90196

VCC

VCC/2

M29W320DT, M29W320DB DC and AC parameters

31/56

Figure 1. AC Measurement Load Circuit

Table 10. Device Capacitance(1)

1. Sampled only, not 100% tested.

Symbol Parameter Test Condition Min Max Unit

CIN Input Capacit ance VIN = 0V 6 pF

COUT Output Capacitance VOUT = 0V 12 pF

AI90197

CL includes JIG capacitance

DEVICE

UNDER

TEST

25kΩ

VCC

25kΩ

VCC

0.1µF

VPP

0.1µF

DC and AC parameters M29W320DT, M29W320DB

32/56

Table 11. DC Characteristics

Symbol Parameter Test Condition Min Typ. Max Unit

ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA

ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±1 µA

ICC1 Supply Current (Read) E = VIL, G = VIH,

f = 6MHz 510mA

ICC2 Supply Current (Standby) E = VCC ±0.2V,

RP = VCC ±0.2V 35 100 µA

ICC3(1) Supply Current

(Program/Erase)

Program/Eras

Controller

active

VPP/WP =

VIL or VIH 20 mA

VPP/WP =

VPP 20 mA

VIL Input Low Voltage –0.5 0.8 V

VIH Input High Voltage 0.7VCC VCC +0.3 V

VPP Voltage for VPP/WP

Program Acceleration VCC = 3.0V ±10% 11.5 12.5 V

IPP Current for VPP/WP

Program Acceleration VCC = 3.0V ±10% 10 mA

VOL Output Low Voltage IOL = 1.8mA 0.45 V

VOH Output High Voltage IOH = –100µAV

CC –0.4 V

VID Identification Voltage 11.5 12.5 V

IID Identification Current A9 = VID 100 µA

VLKO Program/Erase Lockout

Supply Voltage 1.8 2.3 V

1. Sampled only, not 100% tested.

M29W320DT, M29W320DB DC and AC parameters

33/56

Figure 9. Read Mode AC Waveforms

AI90198

tAVAV

tAVQV tAXQX

tELQX tEHQZ

tGLQV

tGLQX tGHQX

VALID

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

tELQV tEHQX

tGHQZ

VALID

tBHQV

tELBL/tELBH tBLQZ

BYTE

Table 12. Read AC Characteristics

Symbol Alt Parameter Test Condition M29W320D Unit

70/7A 80 90

tAVAV tRC Address Valid to Next Address Valid E = VIL,

G = VIL Min 70 80 90 ns

tAVQV tACC Address Valid to Output Va lid E = VIL,

G = VIL Max 70 80 90 ns

tELQX(1) tLZ Chip Enable Low to Output Transition G = VIL Min 0 0 0 ns

tELQV tCE Chip Enable Low to Output Valid G = VIL Max 70 80 90 ns

tGLQX(1) tOLZ Output Enable Low to Output

Transition E = VIL Min 0 0 0 ns

tGLQV tOE Output Enable Low to Output Valid E = VIL Max 30 30 35 ns

tEHQZ(1) tHZ Chip Enable High to Output Hi-Z G = VIL Max 25 25 30 ns

tGHQZ(1) tDF Output Enable High to Output Hi-Z E = VIL Max 25 25 30 ns

tEHQX

tGHQX

tAXQX

tOH

Chip Enable, Output Enable or

Address Tr ansition to Output

Transition Min 0 0 0 ns

tELBL

tELBH

tELFL

tELFH Chip Enable to BYTE Low or High Max 5 5 5 ns

tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 25 30 ns

tBHQV tFHQV BYTE High to Output Valid Max 30 30 40 ns

1. Sampled only, not 100% tested.

DC and AC parameters M29W320DT, M29W320DB

34/56

Figure 10. Write AC Waveforms, Write Enable Controlled

AI90199

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHEL

tWHEH

tWHWL

tELWL

tAVWL

tWHGL

tWLAX

tWHDX

tAVAV

tDVWH

tWLWHtGHWL

tWHRL

Table 13. Write AC Characteristics, Write Enable Controlled

Symbol Alt Parameter M29W320D Unit

70/7A 80 90

tAVAV tWC Address Valid to Next Address Valid Min 70 80 90 ns

tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 0 ns

tWLWH tWP Write Enable Low to Write Enable High Min 45 45 50 ns

tDVWH tDS Input Valid to Write Enable High Min 45 45 50 ns

tWHDX tDH Write Enable High to Input Transition Min 0 0 0 ns

tWHEH tCH Write Enable High to Chip Enable High Min 0 0 0 ns

tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 30 ns

tAVWL tAS Address Valid to Write Enable Low Min 0 0 0 ns

tWLAX tAH Write Enable Low to Address Transition Min 45 45 50 ns

tGHWL Output Enable High to Write Enable Low Min 0 0 0 ns

tWHGL tOEH Write Enable High to Output Enable Low Min 0 0 0 ns

tWHRL(1) tBUSY Program/Erase Valid to RB Low M ax 30 30 35 ns

tVCHEL tVCS VCC High to Chip Enable Low Min 50 50 50 µs

1. Sampled only, not 100% tested.

M29W320DT, M29W320DB DC and AC parameters

35/56

Figure 11. Write AC Waveforms, Chip Enable Controlled

AI90200

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHWL

tEHWH

tEHEL

tWLEL

tAVEL

tEHGL

tELAX

tEHDX

tAVAV

tDVEH

tELEHtGHEL

tEHRL

Table 14. Write AC Characteristics, Chip Enable Controlled

Symbol Alt Parameter M29W320D Unit

70/7A 80 90

tAVAV tWC Address Valid to Next Address Valid Min 70 80 90 ns

tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 0 ns

tELEH tCP Chip Enable Low to Chip Enable High Min 45 45 50 ns

tDVEH tDS Input Valid to Chip Enable High Min 45 45 50 ns

tEHDX tDH Chip Enable High to Input T ransition Min 0 0 0 ns

tEHWH tWH Chip Enable High to Write Enable High Min 0 0 0 ns

tEHEL tCPH Chip Enable High to Chip Enable Low Min 30 30 30 ns

tAVEL tAS Address Valid to Chip Enable Low Min 0 0 0 ns

tELAX tAH Chip Enable Low to Address Transition Min 45 45 50 ns

tGHEL Output Enable High Chip Enable Low M in 0 0 0 n s

tEHGL tOEH Chip Enable High to Output Enable Low Min 0 0 0 ns

tEHRL(1) tBUSY Program/Erase Valid to RB Low Max 30 30 35 ns

tVCHWL tVCS VCC High to Write Enable Low Min 50 50 50 µs

1. Sampled only, not 100% tested.

DC and AC parameters M29W320DT, M29W320DB

36/56

Figure 12. Reset/Block Temporary Unprotect AC Waveforms

Figure 13. Accelerated Program Timing Waveforms

AI02931c

RP tPLPX

tPHWL, tPHEL, tPHGL

tPLYH

tPHPHH

E, G

tRHWL, tRHEL, tRHGL

Table 15. Reset/Block Temporary Unprotect AC Characteristics

Symbol Alt Parameter M29W320D Unit

70/7A 80 90

tPHWL(1)

tPHEL

tPHGL(1) tRH RP High to Write Enable Low , Chip Enable Low ,

Output Enable Low Min 50 50 50 ns

tRHWL(1)

tRHEL(1)

tRHGL(1) tRB RB High to Write Enable Low , Chip Enable Low ,

Output Enable Low Min 0 0 0 ns

tPLPX tRP RP Pulse Width Min 500 500 500 ns

tPLYH(1) tREADY RP Low to Read Mode Max 25 25 25 µs

tPHPHH(1) tVIDR RP Rise Time to VID Min 500 500 500 ns

tVHVPP(1) VPP Rise and Fall Time Min 250 250 250 ns

1. Sampled only, not 100% tested.

AI90202

VPP/WP

VPP

VIL or VIH tVHVPP tVHVPP

M29W320DT, M29W320DB Package mechanical

37/56

8 Package mechanical

Figure 14. TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline

1. Drawing not to scale.

TSOP-G

DIE

LA1 α

Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 1.200 0.0472

A1 0.100 0.050 0.150 0.0039 0.0020 0.0059

A2 1.000 0.950 1.050 0.0394 0.0374 0.0413

B 0.220 0.170 0.270 0.0087 0.0067 0.0106

C 0.100 0.210 0.0039 0.0083

CP 0.080 0.0031

D1 12.000 11.900 12.100 0.4724 0.4685 0.4764

E 20.000 19.800 20.200 0.7874 0.7795 0.7953

E1 18.400 18.300 18.500 0.7244 0.7205 0.7283

e 0.500 – – 0.0197 – –

L 0.600 0.500 0.700 0.0236 0.0197 0.0276

L1 0.800 0.0315

a305305

Package mechanical M29W320DT, M29W320DB

38/56

Figure 15. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline

1. Drawing not to scale.

E1E

BGA-Z32

ddd

FE SD

BALL "A1"

Table 17. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 1.200 0.0472

A1 0.260 0.0102

A2 0.900 0.0354

b 0.350 0.450 0.0138 0.0177

D 6.000 5.900 6.100 0.2362 0.2323 0.2402

D1 4.000 – – 0.1575 – –

ddd 0.100 0.0039

E 8.000 7.900 8.100 0.3150 0.3110 0.3189

E1 5.600 – – 0.2205 – –

e 0.800 – – 0.0315 – –

FD 1.000 – – 0.0394 – –

FE 1.200 – – 0.0472 – –

SD 0.400 – – 0.0157 – –

SE 0.400 – – 0.0157 – –

M29W320DT, M29W320DB Part numbering

39/56

9 Part numbering

Devices are shipped from the factory with the memory content bits erased to ’1’.

For a list of available options (Speed, Package, etc...) or for further information on any

aspect of this device , ple as e contact the Num o ny x Sale s Office nearest to yo u.

Table 18. Ordering Information Scheme

Example: M29W320DB 7A N 6 E

Device Type

M29

Operating Voltage

W = VCC = 2.7 to 3.6V

Device Fu nc tion

320D = 32 Mbit (x8/x16), Non-Uniform Parameter Blocks, B oot Block

Array Matrix

T = Top Boot

B = Bottom Boot

Speed

7A = 70 ns device speed in conjuction with temperature range = 6

denotes Auto Grade –40 °C to 85 °C parts

70 = 70 ns device speed in conjuction with temperature range = 6

denotes Industrial Grade –40 °C to 85 °C parts; temperature range =

3 denotes Auto Grade –40 °C to 125 °C parts

80 = 80 ns device speed in conjuction with temperature range = 3

denotes Automotive Grade –40 °C to 125 °C parts with extended

VCC range (min 2.5 V)

90 = 90 ns device speed in conjuction with temperature range = 6

denotes Industrial Grade –40 °C to 85 °C parts

Package

N = TSOP48: 12 x 20 mm

ZE = TFBGA48: 6 x 8mm, 0.8mm pitch

ZA = TFBGA48: 6 x 8mm, 0.8mm pitch

Temperature Range

6 = Temperature range, –40 to 85 °C

3 = Automotive temperature range, –40 to 125 °C

Option

Blank = Standard Packing

T = Tape & Reel Packing

E = RoHS Package, Standard Packing

F = RoHS Package, Tape & Reel Packing

Block Addresses M29W320DT, M29W320DB

40/56

Appendix A Block Addresses

Table 19. Top Boot Block Addresses, M29W320DT

#Size

(KByte/KWor

Address Range

(x8) Address Range

(x16)

66 16/8 3FC000h-3FFFFFh 1FE000h-1FFFFFh

65 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh

64 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh

63 32/16 3F0000h-3F7FFFh 1F8000h-1FBFFFh

62 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh

61 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh

60 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh

59 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh

58 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh

57 64/32 390000h-39FFFFh 1C8000h-1CFFFFh

56 64/32 380000h-18FFFFh 1C0000h-1C7FFFh

55 64/32 370000h-37FFFFh 1B8000h-1BFFFFh

54 64/32 360000h-36FFFFh 1B0000h-1B7FFFh

53 64/32 350000h-35FFFFh 1A8000h-1AFFFFh

52 64/32 340000h-34FFFFh 1A0000h-1A7FFFh

51 64/32 330000h-33FFFFh 198000h-19FFFFh

50 64/32 320000h-32FFFFh 190000h-197FFFh

49 64/32 310000h-31FFFFh 188000h-18FFFFh

48 64/32 300000h-30FFFFh 180000h-187FFFh

47 64/32 2F0000h-2FFFFFh 178000h-17FFFFh

46 64/32 2E0000h-2EFFFFh 170000h-177FFFh

45 64/32 2D0000h-2DFFFFh 168000h-16FFFFh

44 64/32 2C0000h-2CFFFFh 160000h-167FFFh

43 64/32 2B0000h-2BFFFFh 158000h-15FFFFh

42 64/32 2A0000h-2AFFFFh 150000h-157FFFh

41 64/32 290000h-29FFFFh 148000h-14FFFFh

40 64/32 280000h-28FFFFh 140000h-147FFFh

39 64/32 270000h-27FFFFh 138000h-13FFFFh

38 64/32 260000h-26FFFFh 130000h-137FFFh

37 64/32 250000h-25FFFFh 128000h-12FFFFh

36 64/32 240000h-24FFFFh 120000h-127FFFh

M29W320DT, M29W320DB Block Addresses

41/56

35 64/32 230000h-23FFFFh 118000h-11FFFFh

34 64/32 220000h-22FFFFh 110000h-117FFFh

33 64/32 210000h-21FFFFh 108000h-10FFFFh

32 64/32 200000h-20FFFFh 100000h-107FFFh

31 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh

30 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh

29 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh

28 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh

27 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh

26 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh

25 64/32 190000h-19FFFFh 0C8000h-0CFFFFh

24 64/32 180000h-18FFFFh 0C0000h-0C7FFFh

23 64/32 170000h-17FFFFh 0B8000h-0BFFFFh

22 64/32 160000h-16FFFFh 0B0000h-0B7FFFh

21 64/32 150000h-15FFFFh 0A8000h-0AFFFFh

20 64/32 140000h-14FFFFh 0A0000h-0A7FFFh

19 64/32 130000h-13FFFFh 098000h-09FFFFh

18 64/32 120000h-12FFFFh 090000h-097FFFh

17 64/32 110000h-11FFFFh 088000h-08FFFFh

16 64/32 100000h-10FFFFh 080000h-087FFFh

15 64/32 0F0000h-0FFFFFh 078000h-07FFFFh

14 64/32 0E0000h-0EFFFFh 070000h-077FFFh

13 64/32 0D0000h-0DFFFFh 068000h-06FFFFh

12 64/32 0C0000h-0CFFFFh 060000h-067FFFh

11 64/32 0B0000h-0BFFFFh 058000h-05FFFFh

10 64/32 0A0000h-0AFFFFh 050000h-057FFFh

9 64/32 090000h-09FFFFh 048000h-04FFFFh

8 64/32 080000h-08FFFFh 040000h-047FFFh

7 64/32 070000h-07FFFFh 038000h-03FFFFh

6 64/32 060000h-06FFFFh 030000h-037FFFh

5 64/32 050000h-05FFFFh 028000h-02FFFFh

4 64/32 040000h-04FFFFh 020000h-027FFFh

3 64/32 030000h-03FFFFh 018000h-01FFFFh

2 64/32 020000h-02FFFFh 010000h-017FFFh

1 64/32 010000h-01FFFFh 008000h-00FFFFh

0 64/32 000000h-00FFFFh 000000h-007FFFh

Table 19. Top Boot Block Addresses, M29W320DT (continued)

Block Addresses M29W320DT, M29W320DB

42/56

Table 20. Bottom Boot Block Addresses, M29W320DB

#Size

(KByte/KWord) Address Range

(x8) Address Range

(x16)

66 64/32 3F0000h-3FFFFFh 1F8000h-1FFFFFh

65 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh

64 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh

63 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh

62 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh

61 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh

60 64/32 390000h-39FFFFh 1C8000h-1CFFFFh

59 64/32 380000h-18FFFFh 1C0000h-1C7FFFh

58 64/32 370000h-37FFFFh 1B8000h-1BFFFFh

57 64/32 360000h-36FFFFh 1B0000h-1B7FFFh

56 64/32 350000h-35FFFFh 1A8000h-1AFFFFh

55 64/32 340000h-34FFFFh 1A0000h-1A7FFFh

54 64/32 330000h-33FFFFh 198000h-19FFFFh

53 64/32 320000h-32FFFFh 190000h-197FFFh

52 64/32 310000h-31FFFFh 188000h-18FFFFh

51 64/32 300000h-30FFFFh 180000h-187FFFh

50 64/32 2F0000h-2FFFFFh 178000h-17FFFFh

49 64/32 2E0000h-2EFFFFh 170000h-177FFFh

48 64/32 2D0000h-2DFFFFh 168000h-16FFFFh

47 64/32 2C0000h-2CFFFFh 160000h-167FFFh

46 64/32 2B0000h-2BFFFFh 158000h-15FFFFh

45 64/32 2A0000h-2AFFFFh 150000h-157FFFh

44 64/32 290000h-29FFFFh 148000h-14FFFFh

43 64/32 280000h-28FFFFh 140000h-147FFFh

42 64/32 270000h-27FFFFh 138000h-13FFFFh

41 64/32 260000h-26FFFFh 130000h-137FFFh

40 64/32 250000h-25FFFFh 128000h-12FFFFh

39 64/32 240000h-24FFFFh 120000h-127FFFh

38 64/32 230000h-23FFFFh 118000h-11FFFFh

37 64/32 220000h-22FFFFh 110000h-117FFFh

36 64/32 210000h-21FFFFh 108000h-10FFFFh

35 64/32 200000h-20FFFFh 100000h-107FFFh

34 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh

33 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh

M29W320DT, M29W320DB Block Addresses

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32 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh

31 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh

30 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh

29 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh

28 64/32 190000h-19FFFFh 0C8000h-0CFFFFh

27 64/32 180000h-18FFFFh 0C0000h-0C7FFFh

26 64/32 170000h-17FFFFh 0B8000h-0BFFFFh

25 64/32 160000h-16FFFFh 0B0000h-0B7FFFh

24 64/32 150000h-15FFFFh 0A8000h-0AFFFFh

23 64/32 140000h-14FFFFh 0A0000h-0A7FFFh

22 64/32 130000h-13FFFFh 098000h-09FFFFh

21 64/32 120000h-12FFFFh 090000h-097FFFh

20 64/32 110000h-11FFFFh 088000h-08FFFFh

19 64/32 100000h-10FFFFh 080000h-087FFFh

18 64/32 0F0000h-0FFFFFh 078000h-07FFFFh

17 64/32 0E0000h-0EFFFFh 070000h-077FFFh

16 64/32 0D0000h-0DFFFFh 068000h-06FFFFh

15 64/32 0C0000h-0CFFFFh 060000h-067FFFh

14 64/32 0B0000h-0BFFFFh 058000h-05FFFFh

13 64/32 0A0000h-0AFFFFh 050000h-057FFFh

12 64/32 090000h-09FFFFh 048000h-04FFFFh

11 64/32 080000h-08FFFFh 040000h-047FFFh

10 64/32 070000h-07FFFFh 038000h-03FFFFh

9 64/32 060000h-06FFFFh 030000h-037FFFh

8 64/32 050000h-05FFFFh 028000h-02FFFFh

7 64/32 040000h-04FFFFh 020000h-027FFFh

6 64/32 030000h-03FFFFh 018000h-01FFFFh

5 64/32 020000h-02FFFFh 010000h-017FFFh

4 64/32 010000h-01FFFFh 008000h-00FFFFh

3 32/16 008000h-00FFFFh 004000h-007FFFh

2 8/4 006000h-007FFFh 003000h-003FFFh

1 8/4 004000h-005FFFh 002000h-002FFFh

0 16/8 000000h-003FFFh 000000h-001FFFh

Table 20. Bottom Boot Block Addresses, M29W320DB (continued)

Common Flash Interface ( CFI) M29W320DT, M29W320DB

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Appendix B Common Flash Interface (CFI)

The Common Flash Interfa ce is a JEDEC approved, st andardized dat a structure that can be

read from the Flash memory device. It allows a system software to query the device to

determine various electrical and timing parameters, density informatio n and functions

supported by the memory. The system can interface easily with the device, enabling the

software to upgrade itself when necessary.

When the CFI Query Command is issued the device enters CFI Query mode and the data

structure is read from the memory. Table 21, Table 22, Table 23, Table 24, Table 25 and

Table 26 show the addresses used to retrieve the data. The CFI dat a structure also contains

a security area where a 64 bit unique security number is written (see Table 26, Security

Code area). This area can be ac cessed only in Read mode by the final user. It is impossible

to change the sec uri ty nu m be r after it has been written by Numonyx. Issue a Read

command to return to Re ad mode.

Table 21. Query Structure Overview(1)

Address Sub-section Name Description

x16 x8

10h 20h CFI Query Identification String Command set ID and algorithm data offset

1Bh 36h System Interface Information Device timing & voltage information

27h 4Eh Device Geometry Definiti on Flash device layout

40h 80h Primary Algorithm-specific Extended Query table Additional information specific to the Primary

Algorithm (optional)

61h C2h Security Code Area 64 bit unique device number

1. Query data are always presented on the lowest order data outputs.

Table 22. CFI Query Identification String(1)

Address Data Description Value

x16 x8

10h 20h 0051h “Q”

11h 22h 0052h Query Unique ASCII String "QRY" "R"

12h 24h 0059h "Y"

13h 26h 0002h Primary Algorithm Command Set and Control Interface ID code 16 bit

ID code defining a specific algorithm AMD Compatible

14h 28h 0000h

15h 2Ah 0040h Address for Primary Algorithm extended Query table (see Table 24) P = 40h

16h 2Ch 0000h

17h 2Eh 0000h Alternate Vend or Command Set and Control Interface ID Code

second vendor - specified algorithm supported NA

18h 30h 0000h

19h 32h 0000h Address for Alternate Algorithm extended Query table NA

1Ah 34h 0000h

1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

M29W320DT, M29W320DB Common Flash Interface (CFI)

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Table 23. CFI Query System Interface Information

Address Data Description Value

x16 x8

1Bh 36h 0027h VCC Logic Supply Minimum Pro gram/Erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV 2.7V

1Ch 38h 0036h VCC Logic Supply Maximum Program/Erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV 3.6V

1Dh 3Ah 00B5h VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV 11.5V

1Eh 3Ch 00C5h VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV 12.5V

1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs 16µs

20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs NA

21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s

22h 44h 0000h Typical time out for full chip er ase = 2n ms NA

23h 46h 0005h Maximum timeout for byte/word program = 2n times typical 512µs

24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA

25h 4Ah 0004h Maximum timeout per individual block erase = 2n times typical 16s

26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical NA

Table 24. Device Geometry Definition

Address Data Description Value

x16 x8

27h 4Eh 0016h Device Size = 2n in number of bytes 4 MByte

28h

29h 50h

52h 0002h

0000h Flash Device Interface Code description x8, x16

Async.

2Ah

2Bh 54h

56h 0000h

0000h Maximum number of bytes in multi-byte program or page = 2n NA

2Ch 58h 0004h Number of Erase Block Regions within the device.

It specifies the number of regions within the device containing

contiguous Erase Blocks of the same size. 4

2Dh

2Eh 5Ah

5Ch 0000h

0000h Region 1 Information

Number of identical size erase block = 0000h+1 1

2Fh

30h 5Eh

60h 0040h

0000h Region 1 Information

Block size in Region 1 = 0040h * 256 byte 16 Kbyte

Common Flash Interface ( CFI) M29W320DT, M29W320DB

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31h

32h 62h

64h 0001h

0000h Region 2 Information

Number of identical size erase block = 0001h+1 2

33h

34h 66h

68h 0020h

0000h Region 2 Information

Block size in Region 2 = 0020h * 256 byte 8 Kbyte

35h

36h 6Ah

6Ch 0000h

0000h Region 3 Information

Number of identical size erase block = 0000h+1 1

37h

38h 6Eh

70h 0080h

0000h Region 3 Information

Block size in Region 3 = 0080h * 256 byte 32 Kbyte

39h

3Ah 72h

74h 003Eh

0000h Region 4 Information

Number of identi ca l- si ze e rase bl o ck = 003Eh+1 63

3Bh

3Ch 76h

78h 0000h

0001h Region 4 Information

Block size in Region 4 = 0100h * 256 byte 64 Kbyte

Table 24. Device Geometry Definition (continued)

Address Data Description Value

x16 x8

Table 25. Primary Algorithm-Specific Extended Query Table

Address Data Description Value

x16 x8

40h 80h 0050h

Primary Algorithm extended Query table unique ASCII string “PRI”

"P"

41h 82h 0052h "R"

42h 84h 0049h "I"

43h 86h 0031h Major version number, ASCII "1"

44h 88h 0030h Minor version number, ASCII "0"

45h 8Ah 0000h Address Sensitive Unlock (bits 1 to 0)

00 = required, 01= not required

Silicon Revision Number (bits 7 to 2) Yes

46h 8Ch 0002h Erase Suspend

00 = not supported, 01 = Read only, 02 = Read and Write 2

47h 8Eh 0001h Block Protection

00 = not supported, x = number of blocks in per group 1

48h 90h 0001h Temporary Block Unprotect

00 = not supported, 01 = supported Yes

49h 92h 0004h Block Protect /Unprotect

04 = M29W400B 4

4Ah 94h 0000h Simultaneous Operations, 00 = not supported No

4Bh 96h 0000h Burst Mode, 00 = not supported, 01 = supported No

4Ch 98h 0000h Page Mo de, 00 = not supported, 01 = 4 page word, 02 = 8 page

word No

M29W320DT, M29W320DB Common Flash Interface (CFI)

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4Dh 9Ah 00B5h VPP Supply Minimum Program/Erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV 11.5V

4Eh 9Ch 00C5h VPP Supply Minimum Program/Erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV 12.5V

4Fh 9Eh 000xh Top/Bottom Boot Block Flag

02h = Bottom Boot device, 03h = Top Boot device –

Table 25. Primary Algorithm-Specific Extended Query Table (continued)

Address Data Description Value

x16 x8

Table 26. Security Code Area

Address Data Description

x16 x8

61h C3h, C2h XXXX

64 bit: unique device number

62h C5h, C4h XXXX

63h C7h, C6h XXXX

64h C9h, C8h XXXX

Block Protection M29W320DT, M29W320DB

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Appendix C Block Protection

Block protection can be use d to prevent any ope ratio n from mod ifying the dat a stored in the

Flash. Each Block can be protected individually. Once protected , Program and Erase

operations on the block fail to change the data.

There are three techniques that can be used to control Block Protection, these are the

Programmer technique, the In-System technique and Temporary Unprotection. Temporary

Unprotection is con tro lle d by the Reset/Block Temporary Unpr ot ect i on pin , RP ; this is

described in the Signal Descriptions section.

Unlike the Command Interface of the Program/Erase Controller, the techniques for

protecting an d un p ro te c tin g blo ck s chang e between different Flash me m or y sup p lier s . Fo r

example, the techniques for AMD parts will not work on Numonyx parts. Care should be

taken when changing drivers for one part to work on another.

C.1 Programmer Technique

The Programmer technique uses high (VID) voltage levels on some of the bus pins. These

cannot be achieved using a standard microprocessor bus, therefore the technique is

recommended only for use in Programm ing Equipment.

To protect a block follow the flowchart in Figure 16: Programmer Equipment Block Protect

Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then

all blocks can be unprotected at the same time. To unprotect the chip follow Figure 17:

Programmer Equipment Chip Unprotect Flowchar t. Table 27: Programmer Technique Bus

Operations, BYTE = VIHor VIL, gives a summary of each operation.

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not abort the procedure before

reaching the end. Chip Unprotect can take several seconds and a user message should be

provided to show that the operation is progressing.

C.2 In-System Technique

The In-System technique requires a high voltage level on the Reset/Blocks Temporary

Unprotect pin, RP. This can be achieved without violating the maximum ratings of the

component s on the microprocesso r bus, therefore this technique is suitable for use af ter the

Flash has been fitted to the system.

To protect a block follow the flowchart in Figure 18: In-System Equipment Block Protect

Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then

all the blocks can be unprotected at the same time. To unprotect the chip follow Figure

Figure 19: In-System Equipment Chip Unprotect Flowchart.

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not allow the microprocessor to

service interrupts that will upset the timing and do not abort the procedure before reaching

the end. Chip Unprotect can take several seconds and a user message should be provided

to show that the operation is progressing.

M29W320DT, M29W320DB Block Protection

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Table 27. Programmer Te chnique Bus Operations, BYTE = VIHor VIL

Operation E G W Address Input s

A0-A20 Dat a Inputs/Outputs

DQ15A–1, DQ14-DQ0

Block Protect VIL VID VIL Pulse A9 = VID, A12-A2 0 Block Address

Others = X X

Chip Unprotect VID VID VIL Pulse A9 = VID, A12 = VIH, A15 = VIH

Others = X X

Block Protection

Verify VIL VIL VIH

A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID,

A12-A20 Block Address

Others = X

Pass = XX01h

Retry = XX00h

Block Unprotection

Verify VIL VIL VIH

A0 = VIL, A1 = VIH, A6 = VIH,

A9 = VID, A12-A20 B lock Address

Others = X

Retry = XX01h

Pass = XX00h

Block Protection M29W320DT, M29W320DB

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Figure 16. Programmer Equipment Block Protect Flowchart

ADDRESS = BLOCK ADDRESS

AI03469

G, A9 = VID,

E = VIL

n = 0

Wait 4µs

Wait 100µs

W = VIL

W = VIH

E, G = VIH,

A0, A6 = VIL,

A1 = VIH

A9 = VIH

E, G = VIH

++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

W = VIH

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

Verify Protect Set-upEnd

A9 = VIH

E, G = VIH

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Figure 17. Programmer Equipment Chip Unprotect Flowcha r t

PROTECT ALL BLOCKS

AI03470

A6, A12, A15 = VIH(1)

E, G, A9 = VID

DATA

W = VIH

E, G = VIH

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1, A6 = VIH

Wait 10ms

00h

INCREMENT

CURRENT BLOCK

n = 0

CURRENT BLOCK = 0

Wait 4µs

W = VIL

++n

= 1000

START

YES

YESNO

NO LAST

BLOCK

YES

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

FAIL PASS

Verify Unprotect Set-upEnd

A9 = VIH

E, G = VIH A9 = VIH

E, G = VIH

Block Protection M29W320DT, M29W320DB

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Figure 18. In-System Equipment Block Protect Flowchart

AI03471

WRITE 60h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

n = 0

Wait 100µs

WRITE 40h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

RP = VIH ++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

RP = VIH

Wait 4µs

Verify Protect Set-upEnd

READ DATA

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

WRITE 60h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

M29W320DT, M29W320DB Block Protection

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Figure 19. In-System Equipment Chip Unpr otect Flowchart

AI03472

WRITE 60h

ANY ADDRESS WITH

A0 = VIL, A1 = VIH, A6 = VIH

n = 0

CURRENT BLOCK = 0

Wait 10ms

WRITE 40h

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIH

RP = VIH

++n

= 1000

START

FAIL PASS

YES

DATA

00h

YESNO

RP = VIH

Wait 4µs

READ DATA

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIH

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

PROTECT ALL BLOCKS

INCREMENT

CURRENT BLOCK

LAST

BLOCK

YES

WRITE 60h

ANY ADDRESS WITH

A0 = VIL, A1 = VIH, A6 = VIH

Verify Unprotect Set-upEnd

Revision history M29W320DT, M29W320DB

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10 Revision history

Table 28. Document revision history

Date Revision Changes

March-2001 -01 First Issue (Brief Data)

08-Jun-2001 -02 Document expanded to full Product Preview

22-Jun-2001 -03 Minor text corrections to Read/Reset and Read CFI commands and

Status Register Error and Toggle Bits.

27-Jul-2001 -04

Document type: from Product Preview to Preliminary Data

TFBGA connections and Block Addresses (x16) diagrams

clarification

Write Protect and Block Unprotect clarification

CFI Primary Algorithm table, Block Protection change

05-Oct-2001 -05

Added Block Protection Appendix

“Write Protect/VPP” pin renamed to “VPP/Write Protect” to be

consistent with abbreviation. Changes to the VPP/WP pin

description, Figure 13 and Table 15. IPP added to Table 11 and ICC3

clarified. Modified description of VPP/WP operation in Unlock Bypass

Command section. Added VPP/WP decoupling capacitor to Figure

Figure 1.

Clarified Read/Reset operation during Erase Suspend.

07-Feb-2002 -06 TFBGA package changed from 48 ball to 63 ball

05-Apr-2002 -07

Description of Ready/Busy signal clarified (and Figure 12 modified)

Clarified allowable commands during bl ock erase

Clarified the mode the device returns to in the CFI Read Que r y

command section

19-Nov-2002 7.1

Erase Suspend Latency Time (typical and maximum) added to

Program, Erase Times and Program, Erase Endurance Cycles table.

Typical values added for Icc1 and Icc2 in DC characteristics table.

Logic Diagram and Data Toggle Flowchart corrected.

Revision numbering modified: a minor revision will be indicated by

incrementing the digit after the dot, and a major revision, by

incrementing the digit before the dot (revision version 07 equals 7.0).

Document promoted to full datasheet.

26-May-2003 7.2

Data Retention added to Table 6: Program, Erase Times and

Program, Erase Endurance Cycles, and Typical after 100k W/E

Cycles column removed. TSOP48 package mechanical updated.

Lead-free package options E and F added to Table 18: Ordering

Information Scheme.

16-Aug-2005 8.0 TFBGA48 package added through out document.

M29W320DT, M29W320DB Revision history

Table 28. Document revision history (continued)

Date Revision Changes

13-Jun-2006

Document title modified.

TFBGA63 package removed. ECOPACK text added.

RB signal updated in Fi gure 12: Res et/ Bloc k Temporary Unprotect

AC Waveforms. tPLYH updated in Table 15: Reset/Block Temporary

Unprotect AC Characteristics.

In Table 7: Status Register Bits, DQ7 changed to DQ7 for Program,

Program during Erase Suspend and Program Error.

26-Mar-2008 10 Applied Numonyx branding.

27-May-2009

Added support for aut om otiv e grade as foll ows:

–

Added automotive grade bullet to cover page;

–

Added 7A column to Table 9.: Operating and AC Measurement

Conditions and all AC Characteristics tables.

Updated the order informa tion table as follows:

–

Added 7A, and other details to speed class options

–

Added temperature range = 3 Automotive

22-Feb-2010

Added 80 ns device information to the the following:

–

cover page

–

Ordering Information.

–

Table 9.: Operating and AC Measurement Conditions

–

Table 12.: Read AC Characteristics

–

Table 13.: Write AC Characteristics, Write Enable Controlled

–

Table 15.: Reset/Block Temporary Unprotect AC Characteristics

In Table 9.: Operating and AC Measurement Conditions, chan ged

the min voltage from 3.0 to 2.7 V for 70 ns device.

29-Jan-2018 13 Added Important Notes and Warnings section for

further clarification aligning to industry s tandards.

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M29W320DT, M29W320DB

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